JP2003273421A5 - - Google Patents

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Publication number
JP2003273421A5
JP2003273421A5 JP2002077490A JP2002077490A JP2003273421A5 JP 2003273421 A5 JP2003273421 A5 JP 2003273421A5 JP 2002077490 A JP2002077490 A JP 2002077490A JP 2002077490 A JP2002077490 A JP 2002077490A JP 2003273421 A5 JP2003273421 A5 JP 2003273421A5
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JP
Japan
Prior art keywords
layer
manufacturing
magnetoresistive element
element according
tunnel magnetoresistive
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JP2002077490A
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English (en)
Japanese (ja)
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JP2003273421A (ja
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Priority to JP2002077490A priority Critical patent/JP2003273421A/ja
Priority claimed from JP2002077490A external-priority patent/JP2003273421A/ja
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Publication of JP2003273421A5 publication Critical patent/JP2003273421A5/ja
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JP2002077490A 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法 Withdrawn JP2003273421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002077490A JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002077490A JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

Publications (2)

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JP2003273421A JP2003273421A (ja) 2003-09-26
JP2003273421A5 true JP2003273421A5 (enExample) 2005-09-08

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JP2002077490A Withdrawn JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300025A (ja) * 2006-05-02 2007-11-15 Tohoku Univ トンネル磁気抵抗素子
JP4876708B2 (ja) * 2006-05-11 2012-02-15 Ｔｄｋ株式会社 トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法及び磁気メモリの製造方法
JP5456730B2 (ja) * 2011-07-20 2014-04-02 株式会社アルバック トンネル接合磁気抵抗効果素子の製造方法
US9747930B2 (en) 2015-12-07 2017-08-29 International Business Machines Corporation Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques

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