JP5138204B2 - トンネルバリア層の形成方法、ならびにtmrセンサおよびその製造方法 - Google Patents
トンネルバリア層の形成方法、ならびにtmrセンサおよびその製造方法 Download PDFInfo
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- JP5138204B2 JP5138204B2 JP2006309492A JP2006309492A JP5138204B2 JP 5138204 B2 JP5138204 B2 JP 5138204B2 JP 2006309492 A JP2006309492 A JP 2006309492A JP 2006309492 A JP2006309492 A JP 2006309492A JP 5138204 B2 JP5138204 B2 JP 5138204B2
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- 230000004888 barrier function Effects 0.000 title claims description 98
- 238000000034 method Methods 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011777 magnesium Substances 0.000 claims description 128
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 85
- 239000000395 magnesium oxide Substances 0.000 claims description 85
- 230000005291 magnetic effect Effects 0.000 claims description 57
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 56
- 229910052749 magnesium Inorganic materials 0.000 claims description 56
- 230000003647 oxidation Effects 0.000 claims description 38
- 238000007254 oxidation reaction Methods 0.000 claims description 38
- 230000005294 ferromagnetic effect Effects 0.000 claims description 37
- 238000004544 sputter deposition Methods 0.000 claims description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 23
- 229910003321 CoFe Inorganic materials 0.000 claims description 21
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 claims description 19
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 17
- 229910019236 CoFeB Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052707 ruthenium Inorganic materials 0.000 claims description 14
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 claims description 12
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- GBZQODYDRJQFHG-UHFFFAOYSA-N manganese rhodium Chemical compound [Mn].[Rh] GBZQODYDRJQFHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910001120 nichrome Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- OPISSGAHNMQVJL-UHFFFAOYSA-N [Mn].[Os] Chemical compound [Mn].[Os] OPISSGAHNMQVJL-UHFFFAOYSA-N 0.000 claims description 3
- KRSZDIGCQWBYNU-UHFFFAOYSA-N [Mn].[Ru] Chemical compound [Mn].[Ru] KRSZDIGCQWBYNU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 496
- 239000010408 film Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 19
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 11
- 239000002131 composite material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVOSBSSLEDDREC-UHFFFAOYSA-N [Mn].[Rh].[Ru] Chemical compound [Mn].[Rh].[Ru] QVOSBSSLEDDREC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/1107—Magnetoresistive
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
なお、実際の磁気ヘッドにおいては、再生ヘッドの他に記録ヘッドをも搭載した記録再生ヘッドとして構成する場合が多い。この場合には、上記第2のギャップ層を介して記録ヘッド部分(図示せず)を積層形成し、ウェハ段階での薄膜プロセスを終了する。さらに、この薄膜形成の終了したウェハ構造体から、再生ヘッドおよび記録ヘッドを含むヘッドスライダを切り出し、エアベアリング面を研磨形成することにより、磁気記録再生ヘッドの製造工程の主たる部分が完了する。
Mg/MgO/Mgという3層構造のトンネルバリア層を備えたTMRセンサを実際に作製し、改善された性能を検証する試験を行った。具体的には、上記した実施の形態にしたがって、Ta(2)/Ru(2)/IrMn(7)/CoFe(1.9)/Ru(0.75)/Fe56Co24B20(2)/Mg/MgO/Mg/CoFe(1)/NiFe(4)/Ru(1)/Ta(6)という積層構造のTMR積層体31を作製した。ここで、括弧内の数値は膜厚(nm)を示す。
Claims (20)
- TMRセンサにおけるトンネルバリア層を形成する方法であって、
強磁性層の上に第1のマグネシウム層を均質に形成するステップと、
前記第1のマグネシウム層を自然酸化させて、その上に酸化マグネシウム層(MgO)を均質に形成するステップと、
前記酸化マグネシウム層の上に第2のマグネシウム層を形成するステップと
を含み、これにより、第1のマグネシウム層/酸化マグネシウム層/第2のマグネシウム層からなる3層構造を形成することを特徴とするトンネルバリア層の形成方法。 - 前記強磁性層は第1の強磁性層であり、
第2のマグネシウム層の上に第2の強磁性層を形成するステップをさらに含むことを特徴とする請求項1に記載のトンネルバリア層の形成方法。 - 前記第1および第2のマグネシウム層ならびに前記第1および第2の強磁性層を、スパッタリングシステムの1または複数のチャンバ内において直流スパッタリングにより形成する
ことを特徴とする請求項2に記載のトンネルバリア層の形成方法。 - 前記第1のマグネシウム層を自然酸化させて酸化マグネシウム層を形成するステップを、スパッタリングシステムの前記1または複数のチャンバとは異なる酸化用チャンバ内で行う
ことを特徴とする請求項3に記載のトンネルバリア層の形成方法。 - 前記第1のマグネシウム層を自然酸化させて酸化マグネシウム層を形成するステップを、13.3mPaから133mPaの酸素圧下の酸化用チャンバ内で15秒から300秒間行う
ことを特徴とする請求項1に記載のトンネルバリア層の形成方法。 - 前記第1のマグネシウム層の、自然酸化する前の膜厚を0.4nmから1.4nmとし、前記第2のマグネシウム層の膜厚を0.2nmから0.8nmとする
ことを特徴とする請求項1に記載のトンネルバリア層の形成方法。 - シード層、反強磁性層、ピンド層、前記トンネルバリア層、フリー層およびキャップ層を順に含む積層構造を有するように前記TMRセンサを磁気再生ヘッドの下部シールド層の上に形成する
ことを特徴とする請求項1に記載のトンネルバリア層の形成方法。 - 前記強磁性層が、AP2/Ru/AP1からなる積層構造を有するシンセティック反平行(SyAP)ピンド層であり(但し、AP2層はコバルト鉄(CoFe)からなり、AP1層は膜厚が1nmから8nmのコバルト鉄ボロン(Co1-X-Y FeX BY ;X=5〜95原子%,Y=5〜30原子%)層である)、
前記第1のマグネシウム層を前記シンセティック反平行ピンド層の上に形成する
ことを特徴とする請求項1に記載のトンネルバリア層の形成方法。 - 前記フリー層を、コバルト鉄/ニッケル鉄(Co1-W FeW /Ni1-Z FeZ ;W=10〜90原子%、Z=5〜70原子%)からなる積層膜、または、それぞれコバルト、鉄、ニッケルおよびボロンのうちの少なくとも2つを含む合金からなる層を複数積層した多層膜として形成する
ことを特徴とする請求項7に記載のトンネルバリア層の形成方法。 - 前記シード層を、タンタル(Ta)/ルテニウム(Ru),タンタル,タンタル/ニッケルクロム(Ta/NiCr),タンタル/銅(Cu),またはタンタル/クロムからなるように形成し、
前記反強磁性層を、イリジウムマンガン(IrMn),白金マンガン(MnPt),ニッケルマンガン(NiMn),オスミウムマンガン(OsMn),ルテニウムマンガン(RuMn),ロジウムマンガン(RhMn),パラジウムマンガン(PdMn),ルテニウムロジウムマンガン(RuRhMn),または白金マンガンパラジウム(MnPtPd)のうちのいずれかからなるように形成する
ことを特徴とする請求項7に記載のトンネルバリア層の形成方法。 - 磁気デバイスにおけるTMRセンサを製造する方法であって、
強磁性層の上に第1のマグネシウム層を均質に形成するステップと、
前記第1のマグネシウム層の上に酸化マグネシウム層を形成するために、前記第1のマグネシウム層を酸化させるステップと、
前記酸化マグネシウム層の上に第2のマグネシウム層を形成するステップと
を含み、これにより、第1のマグネシウム層/酸化マグネシウム層/第2のマグネシウム層からなる3層構造のトンネルバリア層を形成する
ことを特徴とするTMRセンサの製造方法。 - 13.3mPaから133mPaの酸素圧下で15秒から300秒の間、前記第1のマグネシウム層を部分的に自然酸化させることにより、前記酸化マグネシウム層を形成する
ことを特徴とする請求項11に記載のTMRセンサの製造方法。 - 前記強磁性層、ならびに前記第1および第2のマグネシウム層を、直流スパッタリングにより形成する
ことを特徴とする請求項11に記載のTMRセンサの製造方法。 - 磁気デバイスにおけるTMRセンサであって、
強磁性層と、
前記強磁性層の上に順に下部マグネシウム層、中間の酸化マグネシウム層および上部マグネシウム層を積層して形成された下部マグネシウム層/酸化マグネシウム層/上部マグネシウム層からなる3層構造のトンネルバリア層と
を備えたことを特徴とするTMRセンサ。 - 前記強磁性層が、AP2/Ru/AP1なる積層構造を有するシンセティック反平行ピンド層であり(但し、AP2層はコバルト鉄(CoFe)からなり、AP1層はコバルト鉄ボロン(Co1-X-Y FeX BY ;X=5〜95原子%,Y=5〜30原子%)を含む膜厚が1nmから8nmの層である。)、
前記上部マグネシウム層の上にフリー層が設けられている
ことを特徴とする請求項14に記載のTMRセンサ。 - 前記強磁性層が、AP2/Ru/AP1なる積層構造を有するシンセティック反平行ピンド層である(但し、AP2層はコバルト鉄(CoFe)からなり、AP1層はコバルト鉄ボロン(CoFeB)層と、膜厚が0.5nmから2nmのコバルト鉄(Co1-V FeV ;V=10〜90原子%)層とからなる)
ことを特徴とする請求項14に記載のTMRセンサ。 - 前記フリー層を、コバルト鉄/ニッケル鉄(Co1-W FeW /Ni1-Z FeZ ;W=10〜90原子%、Z=5〜70原子%)からなる積層膜、または、それぞれコバルト、鉄、ニッケルおよびボロンのうちの少なくとも2つを含む合金からなる層が複数積層された多層膜である
ことを特徴とする請求項15に記載のTMRセンサ。 - 前記上部マグネシウム層は0.2nmから0.8nmの膜厚を有する
ことを特徴とする請求項14に記載のTMRセンサ。 - 前記酸化マグネシウム層の膜厚が、34%以上のMR比と、2Ω・μm2 以上のRA値(面積抵抗値)とを発現するように調整されている
ことを特徴とする請求項14に記載のTMRセンサ。 - 前記磁気デバイスは、MRAMまたは磁気再生ヘッドであり、
タンタル/ルテニウムからなるシード層と、イリジウムマンガンからなる反強磁性層と、コバルト鉄/ルテニウム/コバルト鉄ボロンからなる強磁性ピンド層と、前記トンネルバリア層と、コバルト鉄/ニッケル鉄からなるフリー層と、キャップ層とを基板上に順に積層してなるボトム型スピンバルブとして構成されている
ことを特徴とする請求項14に記載のTMRセンサ。
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US11170806B2 (en) * | 2019-12-27 | 2021-11-09 | Western Digital Technologies, Inc. | Magnetic sensor array with single TMR film plus laser annealing and characterization |
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US8337676B2 (en) | 2012-12-25 |
US8557407B2 (en) | 2013-10-15 |
US20100304185A1 (en) | 2010-12-02 |
US20100320076A1 (en) | 2010-12-23 |
US20070111332A1 (en) | 2007-05-17 |
US7780820B2 (en) | 2010-08-24 |
JP2007142424A (ja) | 2007-06-07 |
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