JP2003273421A - 磁気抵抗効果素子及びその製造方法 - Google Patents

磁気抵抗効果素子及びその製造方法

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Publication number
JP2003273421A
JP2003273421A JP2002077490A JP2002077490A JP2003273421A JP 2003273421 A JP2003273421 A JP 2003273421A JP 2002077490 A JP2002077490 A JP 2002077490A JP 2002077490 A JP2002077490 A JP 2002077490A JP 2003273421 A JP2003273421 A JP 2003273421A
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Japan
Prior art keywords
barrier layer
tunnel barrier
film
layer
oxide
Prior art date
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Withdrawn
Application number
JP2002077490A
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English (en)
Japanese (ja)
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JP2003273421A5 (enExample
Inventor
Shigeo Goshima
滋雄 五島
Kenichi Meguro
賢一 目黒
Hiromasa Takahashi
宏昌 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
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Priority to JP2002077490A priority Critical patent/JP2003273421A/ja
Publication of JP2003273421A publication Critical patent/JP2003273421A/ja
Publication of JP2003273421A5 publication Critical patent/JP2003273421A5/ja
Withdrawn legal-status Critical Current

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  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
JP2002077490A 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法 Withdrawn JP2003273421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002077490A JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002077490A JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

Publications (2)

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JP2003273421A true JP2003273421A (ja) 2003-09-26
JP2003273421A5 JP2003273421A5 (enExample) 2005-09-08

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ID=29205741

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JP2002077490A Withdrawn JP2003273421A (ja) 2002-03-20 2002-03-20 磁気抵抗効果素子及びその製造方法

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JP (1) JP2003273421A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300025A (ja) * 2006-05-02 2007-11-15 Tohoku Univ トンネル磁気抵抗素子
JP2007305771A (ja) * 2006-05-11 2007-11-22 Tdk Corp トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法及び磁気メモリの製造方法
JP2012007241A (ja) * 2011-07-20 2012-01-12 Ulvac Japan Ltd トンネル接合磁気抵抗効果素子の製造方法
US9747930B2 (en) * 2015-12-07 2017-08-29 International Business Machines Corporation Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300025A (ja) * 2006-05-02 2007-11-15 Tohoku Univ トンネル磁気抵抗素子
JP2007305771A (ja) * 2006-05-11 2007-11-22 Tdk Corp トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法及び磁気メモリの製造方法
JP2012007241A (ja) * 2011-07-20 2012-01-12 Ulvac Japan Ltd トンネル接合磁気抵抗効果素子の製造方法
US9747930B2 (en) * 2015-12-07 2017-08-29 International Business Machines Corporation Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques
US10176831B2 (en) 2015-12-07 2019-01-08 International Business Machines Corporation Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques

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