JP2004164836A5 - - Google Patents

Download PDF

Info

Publication number
JP2004164836A5
JP2004164836A5 JP2003377919A JP2003377919A JP2004164836A5 JP 2004164836 A5 JP2004164836 A5 JP 2004164836A5 JP 2003377919 A JP2003377919 A JP 2003377919A JP 2003377919 A JP2003377919 A JP 2003377919A JP 2004164836 A5 JP2004164836 A5 JP 2004164836A5
Authority
JP
Japan
Prior art keywords
layer
spin valve
bias
valve sensor
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003377919A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004164836A (ja
JP4191574B2 (ja
Filing date
Publication date
Priority claimed from US10/290,825 external-priority patent/US6876527B2/en
Application filed filed Critical
Publication of JP2004164836A publication Critical patent/JP2004164836A/ja
Publication of JP2004164836A5 publication Critical patent/JP2004164836A5/ja
Application granted granted Critical
Publication of JP4191574B2 publication Critical patent/JP4191574B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003377919A 2002-11-08 2003-11-07 逆平行結合された導線／センサ重複領域を有する磁気抵抗センサ Expired - Fee Related JP4191574B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/290,825 US6876527B2 (en) 2002-11-08 2002-11-08 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region

Publications (3)

Publication Number Publication Date
JP2004164836A JP2004164836A (ja) 2004-06-10
JP2004164836A5 true JP2004164836A5 (enExample) 2006-12-14
JP4191574B2 JP4191574B2 (ja) 2008-12-03

Family

ID=32229120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003377919A Expired - Fee Related JP4191574B2 (ja) 2002-11-08 2003-11-07 逆平行結合された導線／センサ重複領域を有する磁気抵抗センサ

Country Status (3)

Country Link
US (2) US6876527B2 (enExample)
JP (1) JP4191574B2 (enExample)
CN (1) CN1288628C (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842969B2 (en) * 2002-04-05 2005-01-18 Headway Technologies, Inc. Process for manufacturing a magnetic read head
JP2004289100A (ja) * 2003-01-31 2004-10-14 Japan Science & Technology Agency Ｃｐｐ型巨大磁気抵抗素子及びそれを用いた磁気部品並びに磁気装置
US7085111B2 (en) * 2003-03-13 2006-08-01 Hitachi Global Storage Technologies Netherlands B.V. Low resistance antiparallel tab magnetoresistive sensor
US6954344B2 (en) * 2003-05-16 2005-10-11 Hitachi Global Storage Technologies Netherlands B.V. Anti-parallel tab sensor fabrication using chemical-mechanical polishing process
US7085110B2 (en) * 2003-07-07 2006-08-01 Hitachi Global Storage Technologies Netherlands, B.V. Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive
US7230802B2 (en) * 2003-11-12 2007-06-12 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
US7270854B2 (en) * 2003-11-19 2007-09-18 Hitachi Global Storage Technologies Netherlands B.V. Method for forming a head having improved spin valve properties
US7394624B2 (en) * 2005-02-23 2008-07-01 Hitachi Global Storage Technologies Netherlands B.V. Read sensor with a uniform longitudinal bias stack
US7768749B2 (en) * 2006-02-10 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Tunnel MR head with long stripe height stabilized through side-extended bias layer
US7419891B1 (en) 2006-02-13 2008-09-02 Western Digital (Fremont), Llc Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask
JP4296180B2 (ja) * 2006-02-17 2009-07-15 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，磁気再生装置，および磁気抵抗素子の製造方法
US7768748B2 (en) * 2006-12-14 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor with overlaid combined leads and shields
JP2008243920A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 磁気抵抗効果再生素子、磁気ヘッド、および磁気再生装置
US8336194B2 (en) * 2009-11-03 2012-12-25 Western Digital (Fremont), Llc Method of fabricating a tunneling magnetoresistive (TMR) reader
WO2020023924A1 (en) 2018-07-27 2020-01-30 Zepto Life Technology, LLC System and method for sensing analytes in gmr-based detection of biomarkers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3455037B2 (ja) * 1996-11-22 2003-10-06 アルプス電気株式会社 スピンバルブ型薄膜素子、その製造方法、及びこのスピンバルブ型薄膜素子を用いた薄膜磁気ヘッド
SG75829A1 (en) * 1997-03-14 2000-10-24 Toshiba Kk Magneto-resistance effect element and magnetic head
JP2001067625A (ja) 1999-08-30 2001-03-16 Alps Electric Co Ltd 磁気抵抗効果型素子及びその製造方法
JP2001155313A (ja) 1999-11-25 2001-06-08 Matsushita Electric Ind Co Ltd 薄膜磁気ヘッド及びその製造方法
JP2001176028A (ja) 1999-12-14 2001-06-29 Matsushita Electric Ind Co Ltd 薄膜磁気ヘッド及びその製造方法
US6856494B2 (en) 2000-03-24 2005-02-15 Alps Electric Co., Ltd. Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
US6570745B1 (en) 2000-11-20 2003-05-27 International Business Machines Corporation Lead overlaid type of sensor with sensor passive regions pinned
US6721146B2 (en) * 2001-03-14 2004-04-13 International Business Machines Corporation Magnetic recording GMR read back sensor and method of manufacturing
US7010848B2 (en) * 2002-02-15 2006-03-14 Headway Technologies, Inc. Synthetic pattern exchange configuration for side reading reduction
US7035060B2 (en) * 2002-03-06 2006-04-25 Headway Technologies, Inc. Easily manufactured exchange bias stabilization scheme
US6857180B2 (en) * 2002-03-22 2005-02-22 Headway Technologies, Inc. Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor
US6989971B2 (en) 2002-04-05 2006-01-24 Hitachi Global Storage Technologies Netherlands, B.V. Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process
US6778364B2 (en) * 2002-08-28 2004-08-17 International Business Machines Corporation Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor

Similar Documents

Publication Publication Date Title
EP2366199B1 (en) Magnetic memory cells with radial barrier
KR101142820B1 (ko) ＭＴＪ 디바이스의 ｄＲ／Ｒ을 향상시키기 위한 새로운캡핑 구조체
JP5750211B2 (ja) Ｔｍｒ素子およびその形成方法
EP1615226B1 (en) A novel underlayer for high performance magnetic tunneling junction MRAM
JP4421822B2 (ja) ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
JP5706707B2 (ja) 磁気抵抗効果素子の形成方法
JP2004164836A5 (enExample)
CN110178236B (zh) 隧道磁阻元件的制造方法
US9336802B2 (en) Zig-zag MIMO head reducing space between three sensors
JP2004192794A5 (enExample)
CN101221849B (zh) 具有几何形状的磁性多层膜及其制备方法和用途
CN104471646B (zh) 制造磁电阻的装置的方法
US20120127615A1 (en) Tmr reader structure and process for fabrication
JP2009064528A (ja) 磁気抵抗効果ヘッド及びその製造方法
JP2003204092A (ja) 磁気抵抗効果センサ、磁気抵抗効果センサを有する薄膜磁気ヘッド、磁気抵抗効果センサの製造方法及び薄膜磁気ヘッドの製造方法
JPH10163544A (ja) 磁気抵抗効果素子及びその製造方法
US20030189801A1 (en) Patterned exchange bias GMR using metallic buffer layer
JP4322213B2 (ja) 磁気抵抗効果素子及び薄膜磁気ヘッドの製造方法
CN119758200B (zh) 单一基片全桥tmr磁场传感器及其制备方法
CN101000822B (zh) 一种含金属芯的闭合形状的磁性多层膜及其制法和用途
JP2004253593A (ja) 面直型磁気センサの製造方法
JP2009055050A (ja) スピンバルブ型巨大磁気抵抗薄膜またはｔｍｒ膜の製造方法
CN1992105B (zh) 一种环状含金属芯的磁性多层膜及其制备方法和用途
JP2006173636A (ja) ＴｉＮをキャッピング層として使用した磁気抵抗素子
KR100609384B1 (ko) 박막 자기 헤드의 제조방법