JP2004164837A5 - - Google Patents

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Publication number
JP2004164837A5
JP2004164837A5 JP2003382287A JP2003382287A JP2004164837A5 JP 2004164837 A5 JP2004164837 A5 JP 2004164837A5 JP 2003382287 A JP2003382287 A JP 2003382287A JP 2003382287 A JP2003382287 A JP 2003382287A JP 2004164837 A5 JP2004164837 A5 JP 2004164837A5
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JP
Japan
Prior art keywords
layer
magnetic
cofe
magnetic head
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003382287A
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English (en)
Japanese (ja)
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JP2004164837A (ja
Filing date
Publication date
Priority claimed from US10/294,109 external-priority patent/US6937448B2/en
Application filed filed Critical
Publication of JP2004164837A publication Critical patent/JP2004164837A/ja
Publication of JP2004164837A5 publication Critical patent/JP2004164837A5/ja
Pending legal-status Critical Current

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JP2003382287A 2002-11-13 2003-11-12 ピン固定磁気層のプラズマ平滑化による強化ｇｍｒ磁気ヘッド及びその製造方法 Pending JP2004164837A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/294,109 US6937448B2 (en) 2002-11-13 2002-11-13 Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures

Publications (2)

Publication Number Publication Date
JP2004164837A JP2004164837A (ja) 2004-06-10
JP2004164837A5 true JP2004164837A5 (enExample) 2006-12-14

Family

ID=32229776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003382287A Pending JP2004164837A (ja) 2002-11-13 2003-11-12 ピン固定磁気層のプラズマ平滑化による強化ｇｍｒ磁気ヘッド及びその製造方法

Country Status (3)

Country Link
US (2) US6937448B2 (enExample)
JP (1) JP2004164837A (enExample)
CN (1) CN1315111C (enExample)

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US20060042930A1 (en) * 2004-08-26 2006-03-02 Daniele Mauri Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction
US20060042929A1 (en) * 2004-08-26 2006-03-02 Daniele Mauri Method for reactive sputter deposition of an ultra-thin metal oxide film
DE112005003336T5 (de) * 2005-01-05 2007-11-22 ULVAC, Inc., Chigasaki Verfahren zum Herstellen magnetischer mehrfachgeschichteter Filme
US7918014B2 (en) * 2005-07-13 2011-04-05 Headway Technologies, Inc. Method of manufacturing a CPP structure with enhanced GMR ratio
US7524381B2 (en) * 2005-12-22 2009-04-28 Hitachi Global Storage Technologies Netherlands B.V. Method for controlling magnetostriction in a free layer of a magnetoresistive sensor
US8094421B2 (en) * 2007-12-26 2012-01-10 Hitachi Global Storage Technologies Netherlands, B.V. Current-perpendicular-to-plane (CPP) read sensor with multiple reference layers
US8381391B2 (en) * 2009-06-26 2013-02-26 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer
CN102074266A (zh) * 2010-12-17 2011-05-25 电子科技大学 一种稳定剩磁态的自旋阀存储单元
US10312433B2 (en) * 2012-04-06 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of capping layer resistance area product for magnetic device applications
US9159353B2 (en) * 2012-05-16 2015-10-13 HGST Netherlands B.V. Plasma polish for magnetic recording media
US8984740B1 (en) 2012-11-30 2015-03-24 Western Digital (Fremont), Llc Process for providing a magnetic recording transducer having a smooth magnetic seed layer
EP2953178B1 (en) 2013-02-04 2017-11-22 Alps Electric Co., Ltd. Giant magnetoresistive element and current sensor using same
US9940963B1 (en) 2016-11-17 2018-04-10 Western Digital Technologies, Inc. Magnetic media with atom implanted magnetic layer

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EP0814519B1 (en) * 1996-06-17 2004-01-21 Sharp Kabushiki Kaisha Magnetoresistive effect device, process for fabricating the same, and magnetic head produced using the same
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JP2002117508A (ja) * 2000-10-06 2002-04-19 Hitachi Ltd 磁気ヘッドおよびその製造方法
JP2002150511A (ja) 2000-11-06 2002-05-24 Fujitsu Ltd スピンバルブ磁気抵抗素子及びこれを用いる磁気ヘッド
US6954342B2 (en) * 2001-04-30 2005-10-11 Hitachi Global Storage Technologies Netherlands B.V. Underlayer for high amplitude spin valve sensors
US6709767B2 (en) * 2001-07-31 2004-03-23 Hitachi Global Storage Technologies Netherlands B.V. In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
US6600638B2 (en) * 2001-09-17 2003-07-29 International Business Machines Corporation Corrosion resistive GMR and MTJ sensors
US6731477B2 (en) * 2001-09-20 2004-05-04 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication

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