JP2006216945A5 - - Google Patents

Download PDF

Info

Publication number
JP2006216945A5
JP2006216945A5 JP2006018412A JP2006018412A JP2006216945A5 JP 2006216945 A5 JP2006216945 A5 JP 2006216945A5 JP 2006018412 A JP2006018412 A JP 2006018412A JP 2006018412 A JP2006018412 A JP 2006018412A JP 2006216945 A5 JP2006216945 A5 JP 2006216945A5
Authority
JP
Japan
Prior art keywords
ruthenium
sensor
spacer
ruthenium spacer
tesla
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006018412A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006216945A (ja
Filing date
Publication date
Priority claimed from US11/048,406 external-priority patent/US7408747B2/en
Application filed filed Critical
Publication of JP2006216945A publication Critical patent/JP2006216945A/ja
Publication of JP2006216945A5 publication Critical patent/JP2006216945A5/ja
Pending legal-status Critical Current

Links

JP2006018412A 2005-02-01 2006-01-27 薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ Pending JP2006216945A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/048,406 US7408747B2 (en) 2005-02-01 2005-02-01 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing

Publications (2)

Publication Number Publication Date
JP2006216945A JP2006216945A (ja) 2006-08-17
JP2006216945A5 true JP2006216945A5 (enExample) 2009-02-05

Family

ID=36424595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006018412A Pending JP2006216945A (ja) 2005-02-01 2006-01-27 薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ

Country Status (6)

Country Link
US (2) US7408747B2 (enExample)
EP (1) EP1688923A3 (enExample)
JP (1) JP2006216945A (enExample)
KR (1) KR20060088482A (enExample)
CN (1) CN100378804C (enExample)
SG (1) SG124377A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN102901940B (zh) 2012-10-26 2015-07-15 苏州大学 基于磁温差电效应的传感器元件及其实现方法
US20150213815A1 (en) * 2014-01-29 2015-07-30 Seagate Technology Llc Synthetic antiferromagnetic reader
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9502640B1 (en) 2015-11-03 2016-11-22 International Business Machines Corporation Structure and method to reduce shorting in STT-MRAM device
US9508367B1 (en) 2016-02-03 2016-11-29 International Business Machines Corporation Tunnel magnetoresistive sensor having conductive ceramic layers
US9747931B1 (en) 2016-08-16 2017-08-29 International Business Machines Corporation Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
US11217744B2 (en) * 2019-12-10 2022-01-04 HeFeChip Corporation Limited Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
US5768069A (en) * 1996-11-27 1998-06-16 International Business Machines Corporation Self-biased dual spin valve sensor
JP3212569B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
US6522507B1 (en) 2000-05-12 2003-02-18 Headway Technologies, Inc. Single top spin valve heads for ultra-high recording density
US6521098B1 (en) * 2000-08-31 2003-02-18 International Business Machines Corporation Fabrication method for spin valve sensor with insulating and conducting seed layers
JP2002117508A (ja) * 2000-10-06 2002-04-19 Hitachi Ltd 磁気ヘッドおよびその製造方法
JP3890893B2 (ja) * 2000-12-28 2007-03-07 日本電気株式会社 スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
US6620530B1 (en) * 2001-01-26 2003-09-16 Headway Technologies, Inc. Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it
JP2002359415A (ja) * 2001-05-31 2002-12-13 Sony Corp 面垂直電流型磁気抵抗効果素子、その製造方法、再生ヘッド、及びこれを搭載した情報記憶装置
JP2003086866A (ja) * 2001-09-13 2003-03-20 Anelva Corp スピンバルブ型巨大磁気抵抗薄膜の製造方法
US6775903B2 (en) * 2001-09-17 2004-08-17 Headway Technolog Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer
JP2003242612A (ja) * 2002-02-12 2003-08-29 Fujitsu Ltd フラックスガイド型素子、及び、それを有するヘッド並びにドライブ
US6822838B2 (en) * 2002-04-02 2004-11-23 International Business Machines Corporation Dual magnetic tunnel junction sensor with a longitudinal bias stack
US7161771B2 (en) * 2002-04-02 2007-01-09 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with a longitudinal bias stack
JP3973495B2 (ja) * 2002-06-19 2007-09-12 アルプス電気株式会社 磁気ヘッド及びその製造方法
CN101114694A (zh) * 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
US7042684B2 (en) * 2003-06-12 2006-05-09 Headway Technologies, Inc. Structure/method to form bottom spin valves for ultra-high density
WO2005008799A1 (ja) 2003-07-18 2005-01-27 Fujitsu Limited Ｃｐｐ磁気抵抗効果素子及びその製造方法、磁気ヘッド、磁気記憶装置
US7068478B2 (en) * 2003-07-31 2006-06-27 Headway Technologies, Inc. CPP GMR read head
US20050264952A1 (en) * 2004-05-28 2005-12-01 Fujitsu Limited Magneto-resistive element, magnetic head and magnetic storage apparatus
US7351483B2 (en) * 2004-11-10 2008-04-01 International Business Machines Corporation Magnetic tunnel junctions using amorphous materials as reference and free layers
US7367109B2 (en) * 2005-01-31 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment
US7606009B2 (en) * 2006-03-15 2009-10-20 Hitachi Global Storage Technologies Netherlands B.V. Read sensor stabilized by bidirectional anisotropy
US7595520B2 (en) * 2006-07-31 2009-09-29 Magic Technologies, Inc. Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Similar Documents

Publication Publication Date Title
JP2006216945A5 (enExample)
JP2013089967A5 (enExample)
JP2009283126A5 (enExample)
TW472241B (en) Trilayer seed layer structure for spin valve sensor
JP4421822B2 (ja) ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
US9177575B1 (en) Tunneling magnetoresistive (TMR) read head with reduced gap thickness
JP5018982B2 (ja) スペーサ層を含むｃｐｐ型磁気抵抗効果素子
JP6023158B2 (ja) 磁気抵抗性センサシールド
JP2005302238A5 (enExample)
JP2009272031A (ja) 磁気再生記録ヘッドおよびその製造方法
JP5852856B2 (ja) Ｃｐｐ−ｍｒセンサ、ｍｒセンサ、ｍｒ再生ヘッドの製造方法
JP2010192099A5 (enExample)
JP2011137811A5 (enExample)
JP2004282073A (ja) Ｃｐｐ−ｇｍｒ再生ヘッドおよびその製造方法、ならびに、強磁性フリー層およびその磁歪制御方法
JP2004227749A5 (enExample)
CN100378804C (zh) 利用薄钌间隔层和高磁场退火的增强反平行被钉扎传感器
US7672089B2 (en) Current-perpendicular-to-plane sensor with dual keeper layers
US9007725B1 (en) Sensor with positive coupling between dual ferromagnetic free layer laminates
JP2012113808A5 (enExample)
JP2009146558A5 (enExample)
JP2005019990A5 (enExample)
JP2007287226A (ja) 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
JP2007273657A (ja) 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
CN105283974A (zh) 用于垂直磁力异向性薄膜的种子层
JP2008249556A (ja) 磁気センサ