JP2012113808A5 - - Google Patents

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Publication number
JP2012113808A5
JP2012113808A5 JP2011254257A JP2011254257A JP2012113808A5 JP 2012113808 A5 JP2012113808 A5 JP 2012113808A5 JP 2011254257 A JP2011254257 A JP 2011254257A JP 2011254257 A JP2011254257 A JP 2011254257A JP 2012113808 A5 JP2012113808 A5 JP 2012113808A5
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JP
Japan
Prior art keywords
layer
thickness
fept
sensor according
atomic percent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011254257A
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English (en)
Japanese (ja)
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JP2012113808A (ja
JP5852856B2 (ja
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Publication date
Priority claimed from US12/927,697 external-priority patent/US8493694B2/en
Application filed filed Critical
Publication of JP2012113808A publication Critical patent/JP2012113808A/ja
Publication of JP2012113808A5 publication Critical patent/JP2012113808A5/ja
Application granted granted Critical
Publication of JP5852856B2 publication Critical patent/JP5852856B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011254257A 2010-11-22 2011-11-21 Ｃｐｐ−ｍｒセンサ、ｍｒセンサ、ｍｒ再生ヘッドの製造方法 Expired - Fee Related JP5852856B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/927,697 US8493694B2 (en) 2010-11-22 2010-11-22 Fabrication of a coercivity hard bias using FePt containing film
US12/927,697 2010-11-22

Publications (3)

Publication Number Publication Date
JP2012113808A JP2012113808A (ja) 2012-06-14
JP2012113808A5 true JP2012113808A5 (enExample) 2015-05-28
JP5852856B2 JP5852856B2 (ja) 2016-02-03

Family

ID=46064631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011254257A Expired - Fee Related JP5852856B2 (ja) 2010-11-22 2011-11-21 Ｃｐｐ−ｍｒセンサ、ｍｒセンサ、ｍｒ再生ヘッドの製造方法

Country Status (2)

Country Link
US (1) US8493694B2 (enExample)
JP (1) JP5852856B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080536A (ja) * 2011-10-03 2013-05-02 Toshiba Corp 磁気ヘッド
US9007725B1 (en) 2014-10-07 2015-04-14 Western Digital (Fremont), Llc Sensor with positive coupling between dual ferromagnetic free layer laminates
US9449621B1 (en) 2015-03-26 2016-09-20 Western Digital (Fremont), Llc Dual free layer magnetic reader having a rear bias structure having a high aspect ratio
CN104947057B (zh) * 2015-06-04 2017-08-08 山西师范大学 L10‑FePt基多层膜宽场线性磁电阻传感器及其制备方法
JP2019129164A (ja) 2018-01-19 2019-08-01 Tdk株式会社 磁気抵抗効果デバイス
US10614842B1 (en) 2018-09-19 2020-04-07 Sae Magnetics (H.K.) Ltd. Thin-film piezoelectric-material element with protective film composition and insulating film through hole exposing lower electrode film
US11411162B2 (en) 2018-09-19 2022-08-09 Sae Magnetics (H.K.) Ltd. Thin-film piezoelectric-material element, method of manufacturing the same, head gimbal assembly and hard disk drive
JP7431660B2 (ja) 2020-05-01 2024-02-15 田中貴金属工業株式会社 面内磁化膜多層構造、ハードバイアス層、および磁気抵抗効果素子
US11087785B1 (en) 2020-06-29 2021-08-10 Western Digital Technologies, Inc. Effective rear hard bias for dual free layer read heads

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020015268A1 (en) 2000-03-24 2002-02-07 Sining Mao Spin valve head using high-coercivity hard bias layer
US6773515B2 (en) * 2002-01-16 2004-08-10 Headway Technologies, Inc. FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
US7061731B2 (en) 2003-11-17 2006-06-13 Seagate Technology Llc High magnetic anisotropy hard magnetic bias element
US7688555B2 (en) * 2004-06-15 2010-03-30 Headway Technologies, Inc. Hard bias design for extra high density recording
US20060114620A1 (en) 2004-11-30 2006-06-01 Tdk Corporation Granular type free layer and magnetic head
US7515388B2 (en) * 2004-12-17 2009-04-07 Headway Technologies, Inc. Composite hard bias design with a soft magnetic underlayer for sensor applications
US7446987B2 (en) * 2004-12-17 2008-11-04 Headway Technologies, Inc. Composite hard bias design with a soft magnetic underlayer for sensor applications
JP2008047737A (ja) * 2006-08-17 2008-02-28 Tdk Corp 磁気抵抗効果装置、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US7978442B2 (en) * 2007-10-03 2011-07-12 Tdk Corporation CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
US8632897B2 (en) 2008-04-30 2014-01-21 Seagate Technology Llc Multilayer hard magnet and data storage device read/write head incorporating the same
US8932667B2 (en) 2008-04-30 2015-01-13 Seagate Technology Llc Hard magnet with cap and seed layers and data storage device read/write head incorporating the same
JP2010062483A (ja) * 2008-09-08 2010-03-18 Fujitsu Ltd 磁性膜の製造方法及びこれを用いた磁気デバイス
US8147994B2 (en) * 2009-02-26 2012-04-03 Tdk Corporation Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
US8218270B1 (en) * 2011-03-31 2012-07-10 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure

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