JP2009278130A5 - - Google Patents

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Publication number
JP2009278130A5
JP2009278130A5 JP2009189570A JP2009189570A JP2009278130A5 JP 2009278130 A5 JP2009278130 A5 JP 2009278130A5 JP 2009189570 A JP2009189570 A JP 2009189570A JP 2009189570 A JP2009189570 A JP 2009189570A JP 2009278130 A5 JP2009278130 A5 JP 2009278130A5
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JP
Japan
Prior art keywords
metal layer
tunnel barrier
plasma
plasma treatment
crystallizing
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JP2009189570A
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English (en)
Japanese (ja)
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JP2009278130A (ja
JP4908556B2 (ja
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Priority to JP2009189570A priority Critical patent/JP4908556B2/ja
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Publication of JP2009278130A5 publication Critical patent/JP2009278130A5/ja
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Publication of JP4908556B2 publication Critical patent/JP4908556B2/ja
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JP2009189570A 2008-03-07 2009-08-18 磁気抵抗素子の製造方法 Active JP4908556B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009189570A JP4908556B2 (ja) 2008-03-07 2009-08-18 磁気抵抗素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008058404 2008-03-07
JP2008058404 2008-03-07
JP2009189570A JP4908556B2 (ja) 2008-03-07 2009-08-18 磁気抵抗素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009530719A Division JP4527806B2 (ja) 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置

Publications (3)

Publication Number Publication Date
JP2009278130A JP2009278130A (ja) 2009-11-26
JP2009278130A5 true JP2009278130A5 (enExample) 2010-12-16
JP4908556B2 JP4908556B2 (ja) 2012-04-04

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Family Applications (2)

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JP2009530719A Active JP4527806B2 (ja) 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置
JP2009189570A Active JP4908556B2 (ja) 2008-03-07 2009-08-18 磁気抵抗素子の製造方法

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Application Number Title Priority Date Filing Date
JP2009530719A Active JP4527806B2 (ja) 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置

Country Status (5)

Country Link
US (1) US8318510B2 (enExample)
JP (2) JP4527806B2 (enExample)
KR (2) KR101298817B1 (enExample)
CN (1) CN101960631B (enExample)
WO (1) WO2009110608A1 (enExample)

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US8508221B2 (en) 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
US8800289B2 (en) 2010-09-08 2014-08-12 General Electric Company Apparatus and method for mixing fuel in a gas turbine nozzle
US8202572B2 (en) * 2010-11-22 2012-06-19 Headway Technologies, Inc. TMR device with improved MgO barrier
KR101487635B1 (ko) * 2010-12-22 2015-01-29 가부시키가이샤 아루박 터널 자기 저항 소자의 제조 방법
US8325448B2 (en) * 2011-02-11 2012-12-04 Headway Technologies, Inc. Pinning field in MR devices despite higher annealing temperature
US20130001717A1 (en) * 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
US8492169B2 (en) 2011-08-15 2013-07-23 Magic Technologies, Inc. Magnetic tunnel junction for MRAM applications
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
JP5999543B2 (ja) * 2012-01-16 2016-09-28 株式会社アルバック トンネル磁気抵抗素子の製造方法
US10312433B2 (en) 2012-04-06 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of capping layer resistance area product for magnetic device applications
US8582253B1 (en) 2012-06-04 2013-11-12 Western Digital (Fremont), Llc Magnetic sensor having a high spin polarization reference layer
US8984740B1 (en) 2012-11-30 2015-03-24 Western Digital (Fremont), Llc Process for providing a magnetic recording transducer having a smooth magnetic seed layer
US9287494B1 (en) 2013-06-28 2016-03-15 Western Digital (Fremont), Llc Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) * 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9287322B2 (en) 2014-05-12 2016-03-15 Samsung Electronics Co., Ltd. Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications
US20150333254A1 (en) 2014-05-15 2015-11-19 Headway Technologies, Inc. Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
US9559296B2 (en) 2014-07-03 2017-01-31 Samsung Electronics Co., Ltd. Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer
CN104362250B (zh) * 2014-10-14 2018-07-17 北京工业大学 具有交换偏置效应和电致阻变效应的异质结及其制备方法
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) * 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN104659202A (zh) * 2015-02-13 2015-05-27 西南应用磁学研究所 提高隧道结薄膜磁电阻效应的制备方法
JP6244402B2 (ja) * 2016-05-31 2017-12-06 東京エレクトロン株式会社 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム
KR102511914B1 (ko) 2016-08-04 2023-03-21 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
JP6826344B2 (ja) * 2017-02-09 2021-02-03 Tdk株式会社 強磁性トンネル接合体の製造方法及び強磁性トンネル接合体
KR102406277B1 (ko) * 2017-10-25 2022-06-08 삼성전자주식회사 자기 저항 메모리 소자 및 이의 제조 방법
US10648069B2 (en) 2018-10-16 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
CN112951985B (zh) * 2019-12-11 2025-07-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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JP3400750B2 (ja) * 1999-07-23 2003-04-28 ティーディーケイ株式会社 トンネル磁気抵抗効果型ヘッドの製造方法
KR20040096010A (ko) * 2003-05-07 2004-11-16 아남반도체 주식회사 반도체 소자의 소자 분리막 형성 방법
US7331100B2 (en) * 2004-07-07 2008-02-19 Headway Technologies, Inc. Process of manufacturing a seed/AFM combination for a CPP GMR device
JP4822680B2 (ja) * 2004-08-10 2011-11-24 株式会社東芝 磁気抵抗効果素子の製造方法
JP4766855B2 (ja) 2004-08-23 2011-09-07 株式会社リコー 画像形成装置
JP4292128B2 (ja) 2004-09-07 2009-07-08 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP4550552B2 (ja) * 2004-11-02 2010-09-22 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
JP2006310701A (ja) * 2005-05-02 2006-11-09 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP4886268B2 (ja) 2005-10-28 2012-02-29 株式会社東芝 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置
US7780820B2 (en) 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP4490950B2 (ja) * 2006-07-07 2010-06-30 株式会社東芝 磁気抵抗効果素子の製造方法、及び磁気抵抗効果素子
WO2008012959A1 (en) * 2006-07-26 2008-01-31 Alps Electric Co., Ltd. Magnetic sensor

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