JP4527806B2 - 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 - Google Patents

磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 Download PDF

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Publication number
JP4527806B2
JP4527806B2 JP2009530719A JP2009530719A JP4527806B2 JP 4527806 B2 JP4527806 B2 JP 4527806B2 JP 2009530719 A JP2009530719 A JP 2009530719A JP 2009530719 A JP2009530719 A JP 2009530719A JP 4527806 B2 JP4527806 B2 JP 4527806B2
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oxidation
thickness
layer
tunnel barrier
magnetoresistive element
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JPWO2009110608A1 (ja
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ヨンスック チョイ
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Canon Anelva Corp
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Canon Anelva Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
JP2009530719A 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 Active JP4527806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008058404 2008-03-07
JP2008058404 2008-03-07
PCT/JP2009/054327 WO2009110608A1 (ja) 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置

Related Child Applications (1)

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JP2009189570A Division JP4908556B2 (ja) 2008-03-07 2009-08-18 磁気抵抗素子の製造方法

Publications (2)

Publication Number Publication Date
JP4527806B2 true JP4527806B2 (ja) 2010-08-18
JPWO2009110608A1 JPWO2009110608A1 (ja) 2011-07-14

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JP2009530719A Active JP4527806B2 (ja) 2008-03-07 2009-03-06 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置
JP2009189570A Active JP4908556B2 (ja) 2008-03-07 2009-08-18 磁気抵抗素子の製造方法

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US (1) US8318510B2 (enExample)
JP (2) JP4527806B2 (enExample)
KR (2) KR101271353B1 (enExample)
CN (1) CN101960631B (enExample)
WO (1) WO2009110608A1 (enExample)

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US8202572B2 (en) * 2010-11-22 2012-06-19 Headway Technologies, Inc. TMR device with improved MgO barrier
KR101487635B1 (ko) * 2010-12-22 2015-01-29 가부시키가이샤 아루박 터널 자기 저항 소자의 제조 방법
US8325448B2 (en) * 2011-02-11 2012-12-04 Headway Technologies, Inc. Pinning field in MR devices despite higher annealing temperature
US20130001717A1 (en) * 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
US8492169B2 (en) 2011-08-15 2013-07-23 Magic Technologies, Inc. Magnetic tunnel junction for MRAM applications
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
JP5999543B2 (ja) * 2012-01-16 2016-09-28 株式会社アルバック トンネル磁気抵抗素子の製造方法
US10312433B2 (en) * 2012-04-06 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of capping layer resistance area product for magnetic device applications
US8582253B1 (en) 2012-06-04 2013-11-12 Western Digital (Fremont), Llc Magnetic sensor having a high spin polarization reference layer
US8984740B1 (en) 2012-11-30 2015-03-24 Western Digital (Fremont), Llc Process for providing a magnetic recording transducer having a smooth magnetic seed layer
US9287494B1 (en) 2013-06-28 2016-03-15 Western Digital (Fremont), Llc Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) * 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9287322B2 (en) 2014-05-12 2016-03-15 Samsung Electronics Co., Ltd. Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications
US20150333254A1 (en) 2014-05-15 2015-11-19 Headway Technologies, Inc. Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
US9559296B2 (en) 2014-07-03 2017-01-31 Samsung Electronics Co., Ltd. Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer
CN104362250B (zh) * 2014-10-14 2018-07-17 北京工业大学 具有交换偏置效应和电致阻变效应的异质结及其制备方法
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) * 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN104659202A (zh) * 2015-02-13 2015-05-27 西南应用磁学研究所 提高隧道结薄膜磁电阻效应的制备方法
JP6244402B2 (ja) * 2016-05-31 2017-12-06 東京エレクトロン株式会社 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム
KR102511914B1 (ko) 2016-08-04 2023-03-21 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
JP6826344B2 (ja) * 2017-02-09 2021-02-03 Tdk株式会社 強磁性トンネル接合体の製造方法及び強磁性トンネル接合体
KR102406277B1 (ko) * 2017-10-25 2022-06-08 삼성전자주식회사 자기 저항 메모리 소자 및 이의 제조 방법
US10648069B2 (en) 2018-10-16 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
CN112951985B (zh) * 2019-12-11 2025-07-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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JP2001034919A (ja) * 1999-07-23 2001-02-09 Tdk Corp トンネル磁気抵抗効果型ヘッドの製造方法
JP2006024349A (ja) * 2004-07-07 2006-01-26 Headway Technologies Inc Ｃｐｐ−ｇｍｒ再生ヘッドおよびその製造方法、ならびにシード層
JP2006134950A (ja) * 2004-11-02 2006-05-25 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
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JP2006024349A (ja) * 2004-07-07 2006-01-26 Headway Technologies Inc Ｃｐｐ−ｇｍｒ再生ヘッドおよびその製造方法、ならびにシード層
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Also Published As

Publication number Publication date
JPWO2009110608A1 (ja) 2011-07-14
KR20120039686A (ko) 2012-04-25
JP2009278130A (ja) 2009-11-26
US20110086439A1 (en) 2011-04-14
KR101271353B1 (ko) 2013-06-04
KR20100007885A (ko) 2010-01-22
CN101960631B (zh) 2013-05-01
WO2009110608A1 (ja) 2009-09-11
KR101298817B1 (ko) 2013-08-23
US8318510B2 (en) 2012-11-27
CN101960631A (zh) 2011-01-26
JP4908556B2 (ja) 2012-04-04

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