JP2009065181A5 - - Google Patents

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Publication number
JP2009065181A5
JP2009065181A5 JP2008260231A JP2008260231A JP2009065181A5 JP 2009065181 A5 JP2009065181 A5 JP 2009065181A5 JP 2008260231 A JP2008260231 A JP 2008260231A JP 2008260231 A JP2008260231 A JP 2008260231A JP 2009065181 A5 JP2009065181 A5 JP 2009065181A5
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JP
Japan
Prior art keywords
mgo
sputtering
manufacturing
magnetoresistive
element according
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JP2008260231A
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English (en)
Japanese (ja)
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JP2009065181A (ja
JP5260225B2 (ja
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Priority to JP2008260231A priority Critical patent/JP5260225B2/ja
Priority claimed from JP2008260231A external-priority patent/JP5260225B2/ja
Publication of JP2009065181A publication Critical patent/JP2009065181A/ja
Publication of JP2009065181A5 publication Critical patent/JP2009065181A5/ja
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JP2008260231A 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法 Active JP5260225B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008260231A JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006058748 2006-03-03
JP2006058748 2006-03-03
JP2008260231A JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008042175A Division JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置

Publications (3)

Publication Number Publication Date
JP2009065181A JP2009065181A (ja) 2009-03-26
JP2009065181A5 true JP2009065181A5 (enExample) 2011-03-31
JP5260225B2 JP5260225B2 (ja) 2013-08-14

Family

ID=39699993

Family Applications (2)

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JP2008042175A Active JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置
JP2008260231A Active JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008042175A Active JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置

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Country Link
JP (2) JP4679595B2 (enExample)
CN (2) CN101615653B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011093334A1 (ja) * 2010-01-26 2011-08-04 キヤノンアネルバ株式会社 成膜方法、成膜装置、および該成膜装置の制御装置
JP5998654B2 (ja) 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
WO2014024358A1 (ja) * 2012-08-10 2014-02-13 キヤノンアネルバ株式会社 トンネル磁気抵抗素子の製造装置
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
KR101813420B1 (ko) * 2013-10-30 2017-12-28 도쿄엘렉트론가부시키가이샤 성막 장치 및 성막 방법
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN110565059B (zh) * 2019-09-10 2021-09-17 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0314227A (ja) * 1989-06-13 1991-01-22 Sharp Corp 半導体装置の製造方法
JPH0397855A (ja) * 1989-09-07 1991-04-23 Shimadzu Corp スパッタリング装置
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
JP3021601B2 (ja) * 1990-10-22 2000-03-15 神島化学工業株式会社 ＭｇＯターゲット
JPH07180047A (ja) * 1993-12-24 1995-07-18 Matsushita Electric Ind Co Ltd 強誘電体薄膜素子の製造方法及び製造装置
JPH0949075A (ja) * 1995-08-10 1997-02-18 Sony Corp スパッタ装置
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2005298894A (ja) * 2004-04-12 2005-10-27 Fujitsu Ltd ターゲットのクリーニング方法及び物理的堆積装置

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