JP2013232273A5 - - Google Patents

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Publication number
JP2013232273A5
JP2013232273A5 JP2013095600A JP2013095600A JP2013232273A5 JP 2013232273 A5 JP2013232273 A5 JP 2013232273A5 JP 2013095600 A JP2013095600 A JP 2013095600A JP 2013095600 A JP2013095600 A JP 2013095600A JP 2013232273 A5 JP2013232273 A5 JP 2013232273A5
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JP
Japan
Prior art keywords
thin film
magnetic thin
substrate
stress
cryogenic
Prior art date
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Application number
JP2013095600A
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English (en)
Japanese (ja)
Other versions
JP6042261B2 (ja
JP2013232273A (ja
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Publication date
Priority claimed from US13/460,290 external-priority patent/US20130288078A1/en
Application filed filed Critical
Publication of JP2013232273A publication Critical patent/JP2013232273A/ja
Publication of JP2013232273A5 publication Critical patent/JP2013232273A5/ja
Application granted granted Critical
Publication of JP6042261B2 publication Critical patent/JP6042261B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013095600A 2012-04-30 2013-04-30 データ記憶装置 Expired - Fee Related JP6042261B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/460,290 US20130288078A1 (en) 2012-04-30 2012-04-30 Thin Film with Reduced Stress Anisotropy
US13/460,290 2012-04-30

Publications (3)

Publication Number Publication Date
JP2013232273A JP2013232273A (ja) 2013-11-14
JP2013232273A5 true JP2013232273A5 (enExample) 2014-06-19
JP6042261B2 JP6042261B2 (ja) 2016-12-14

Family

ID=48366138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013095600A Expired - Fee Related JP6042261B2 (ja) 2012-04-30 2013-04-30 データ記憶装置

Country Status (5)

Country Link
US (1) US20130288078A1 (enExample)
EP (1) EP2660817A1 (enExample)
JP (1) JP6042261B2 (enExample)
KR (1) KR101467976B1 (enExample)
CN (1) CN103500581A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE505915C2 (sv) * 1994-08-18 1997-10-20 Ericsson Telefon Ab L M Cellulärt mobilkommunikatiosssystem
US9142226B2 (en) * 2012-06-29 2015-09-22 Seagate Technology Llc Thin film with tuned grain size
US9236565B2 (en) * 2014-04-29 2016-01-12 National University Of Singapore Method for fabricating a magnetoresistive device
US9378760B2 (en) * 2014-07-31 2016-06-28 Seagate Technology Llc Data reader with tuned microstructure
US11031032B1 (en) 2017-04-03 2021-06-08 Seagate Technology Llc Cryogenic magnetic alloys with less grain refinement dopants
CN112697328B (zh) * 2021-01-07 2022-03-29 中车青岛四方机车车辆股份有限公司 一种超声波残余应力检测系统及测量方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172520A (en) * 1981-04-17 1982-10-23 Nippon Telegr & Teleph Corp <Ntt> Thin-film type magnetic head
JPS6120311A (ja) * 1984-07-09 1986-01-29 Nippon Telegr & Teleph Corp <Ntt> アモルフアス軟磁性膜の作製方法
US5225951A (en) * 1985-12-27 1993-07-06 Sharp Kabushiki Kaisha Thin film magnetic head with reduced internal stresses
JPS62154317A (ja) * 1985-12-27 1987-07-09 Sharp Corp 薄膜磁気ヘツド
JPH0397210A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 膜形成装置及びこれを用いて形成した磁性膜
JPH04246805A (ja) * 1991-02-01 1992-09-02 Fujitsu Ltd 薄膜の形成方法
JPH10255233A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 磁気抵抗効果ヘッドの製造方法
JP3325868B2 (ja) * 2000-01-18 2002-09-17 ティーディーケイ株式会社 トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法およびメモリ素子の製造方法
JP2002004043A (ja) * 2000-06-19 2002-01-09 Matsushita Electric Ind Co Ltd 曲面を有する構造体及びその製造方法
US6710987B2 (en) * 2000-11-17 2004-03-23 Tdk Corporation Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
JP4024510B2 (ja) * 2001-10-10 2007-12-19 株式会社半導体エネルギー研究所 記録媒体、および基材
US20040060812A1 (en) * 2002-09-27 2004-04-01 Applied Materials, Inc. Method for modulating stress in films deposited using a physical vapor deposition (PVD) process
US7891212B2 (en) * 2004-03-25 2011-02-22 Hoya Corporation Magnetic disk glass substrate
JP4786331B2 (ja) * 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
US7504345B2 (en) * 2007-06-06 2009-03-17 Opc Laser Systems Llc Method for eliminating defects from semiconductor materials
ITTO20080358A1 (it) * 2008-05-14 2009-11-15 Consiglio Nazionale Ricerche Procedimento e sistema per la fabbricazione di nanostrutture e nanodispositivi tramite proiezione di materiale in forma atomica o molecolare da sorgente sagomata attraverso un diaframma con aperture di dimensioni nanometriche
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法

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