KR101467976B1 - 감소된 응력 이방성을 갖는 박막 - Google Patents

감소된 응력 이방성을 갖는 박막 Download PDF

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Publication number
KR101467976B1
KR101467976B1 KR1020130048611A KR20130048611A KR101467976B1 KR 101467976 B1 KR101467976 B1 KR 101467976B1 KR 1020130048611 A KR1020130048611 A KR 1020130048611A KR 20130048611 A KR20130048611 A KR 20130048611A KR 101467976 B1 KR101467976 B1 KR 101467976B1
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South Korea
Prior art keywords
thin film
stress
tuned
substrate
annealing
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Expired - Fee Related
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KR1020130048611A
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English (en)
Korean (ko)
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KR20130122586A (ko
Inventor
멩 즈후
루이스 쿠쓰버트 엘리어트 에스트린
웨이 티안
벤카테스와라 인투리
씨. 마이클 카우트즈키
Original Assignee
시게이트 테크놀로지 엘엘씨
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Publication of KR20130122586A publication Critical patent/KR20130122586A/ko
Application granted granted Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/3113—Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
    • G11B5/016—Recording on, or reproducing or erasing from, magnetic disks using magnetic foils
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1020130048611A 2012-04-30 2013-04-30 감소된 응력 이방성을 갖는 박막 Expired - Fee Related KR101467976B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/460,290 US20130288078A1 (en) 2012-04-30 2012-04-30 Thin Film with Reduced Stress Anisotropy
US13/460,290 2012-04-30

Publications (2)

Publication Number Publication Date
KR20130122586A KR20130122586A (ko) 2013-11-07
KR101467976B1 true KR101467976B1 (ko) 2014-12-02

Family

ID=48366138

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130048611A Expired - Fee Related KR101467976B1 (ko) 2012-04-30 2013-04-30 감소된 응력 이방성을 갖는 박막

Country Status (5)

Country Link
US (1) US20130288078A1 (enExample)
EP (1) EP2660817A1 (enExample)
JP (1) JP6042261B2 (enExample)
KR (1) KR101467976B1 (enExample)
CN (1) CN103500581A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE505915C2 (sv) * 1994-08-18 1997-10-20 Ericsson Telefon Ab L M Cellulärt mobilkommunikatiosssystem
US9142226B2 (en) * 2012-06-29 2015-09-22 Seagate Technology Llc Thin film with tuned grain size
US9236565B2 (en) * 2014-04-29 2016-01-12 National University Of Singapore Method for fabricating a magnetoresistive device
US9378760B2 (en) * 2014-07-31 2016-06-28 Seagate Technology Llc Data reader with tuned microstructure
US11031032B1 (en) 2017-04-03 2021-06-08 Seagate Technology Llc Cryogenic magnetic alloys with less grain refinement dopants
CN112697328B (zh) * 2021-01-07 2022-03-29 中车青岛四方机车车辆股份有限公司 一种超声波残余应力检测系统及测量方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010021537A1 (en) * 2000-01-18 2001-09-13 Koji Shimazawa Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
JP2007173476A (ja) * 2005-12-21 2007-07-05 Toshiba Corp 磁気抵抗効果素子およびその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172520A (en) * 1981-04-17 1982-10-23 Nippon Telegr & Teleph Corp <Ntt> Thin-film type magnetic head
JPS6120311A (ja) * 1984-07-09 1986-01-29 Nippon Telegr & Teleph Corp <Ntt> アモルフアス軟磁性膜の作製方法
US5225951A (en) * 1985-12-27 1993-07-06 Sharp Kabushiki Kaisha Thin film magnetic head with reduced internal stresses
JPS62154317A (ja) * 1985-12-27 1987-07-09 Sharp Corp 薄膜磁気ヘツド
JPH0397210A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 膜形成装置及びこれを用いて形成した磁性膜
JPH04246805A (ja) * 1991-02-01 1992-09-02 Fujitsu Ltd 薄膜の形成方法
JPH10255233A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 磁気抵抗効果ヘッドの製造方法
JP2002004043A (ja) * 2000-06-19 2002-01-09 Matsushita Electric Ind Co Ltd 曲面を有する構造体及びその製造方法
US6710987B2 (en) * 2000-11-17 2004-03-23 Tdk Corporation Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
JP4024510B2 (ja) * 2001-10-10 2007-12-19 株式会社半導体エネルギー研究所 記録媒体、および基材
US20040060812A1 (en) * 2002-09-27 2004-04-01 Applied Materials, Inc. Method for modulating stress in films deposited using a physical vapor deposition (PVD) process
US7891212B2 (en) * 2004-03-25 2011-02-22 Hoya Corporation Magnetic disk glass substrate
US7504345B2 (en) * 2007-06-06 2009-03-17 Opc Laser Systems Llc Method for eliminating defects from semiconductor materials
ITTO20080358A1 (it) * 2008-05-14 2009-11-15 Consiglio Nazionale Ricerche Procedimento e sistema per la fabbricazione di nanostrutture e nanodispositivi tramite proiezione di materiale in forma atomica o molecolare da sorgente sagomata attraverso un diaframma con aperture di dimensioni nanometriche
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010021537A1 (en) * 2000-01-18 2001-09-13 Koji Shimazawa Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
JP2007173476A (ja) * 2005-12-21 2007-07-05 Toshiba Corp 磁気抵抗効果素子およびその製造方法

Also Published As

Publication number Publication date
US20130288078A1 (en) 2013-10-31
CN103500581A (zh) 2014-01-08
JP6042261B2 (ja) 2016-12-14
JP2013232273A (ja) 2013-11-14
EP2660817A1 (en) 2013-11-06
KR20130122586A (ko) 2013-11-07

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