JP2009065181A - 磁気抵抗効果素子の製造方法 - Google Patents
磁気抵抗効果素子の製造方法 Download PDFInfo
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- JP2009065181A JP2009065181A JP2008260231A JP2008260231A JP2009065181A JP 2009065181 A JP2009065181 A JP 2009065181A JP 2008260231 A JP2008260231 A JP 2008260231A JP 2008260231 A JP2008260231 A JP 2008260231A JP 2009065181 A JP2009065181 A JP 2009065181A
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- 230000000694 effects Effects 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title abstract description 52
- 230000001590 oxidative effect Effects 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 58
- 239000000126 substance Substances 0.000 claims abstract description 51
- 229910019236 CoFeB Inorganic materials 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 229910003321 CoFe Inorganic materials 0.000 claims abstract description 17
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 40
- 150000002739 metals Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 31
- 239000010408 film Substances 0.000 description 327
- 239000010410 layer Substances 0.000 description 230
- 239000000395 magnesium oxide Substances 0.000 description 169
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 169
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 169
- 239000000758 substrate Substances 0.000 description 157
- 239000007789 gas Substances 0.000 description 62
- 239000000470 constituent Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 35
- 230000005294 ferromagnetic effect Effects 0.000 description 30
- 239000012212 insulator Substances 0.000 description 28
- 239000011777 magnesium Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 229910019041 PtMn Inorganic materials 0.000 description 12
- 238000005192 partition Methods 0.000 description 10
- 230000005290 antiferromagnetic effect Effects 0.000 description 8
- 230000005291 magnetic effect Effects 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Measuring Magnetic Variables (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】 酸化性ガスに対するゲッタ効果がMgOより大きい物質(但し、Ta、CuN、CoFe、Ru、CoFeB、Ti、Mg、Cr、及びZrの1以上からなる、金属又は半導体を除く)を含有するターゲットをスパッタリングして、成膜室の内壁に被着する第一工程と、前記第一工程後に、前記成膜室においてMgOターゲットに高周波電力を印加してスパッタリング法によりMgO層を形成する第二工程と、を有する。
【選択図】 図3
Description
例えば、RAが5Ω−μm2において、マスク295と基板12とを接触させた場合(▲)よりも、マスク295と基板12とを離間させた場合(●)の方が、より高いMR比を得ることができ、全体としてもマスク295と基板12とを離間させた場合(●)の方が、低RA高MR比の両立という課題をより解決しているものである。従って、金属製のマスク295と基板12とを離間させることによって、マスク295と基板12とが電気的に絶縁された状態となり、MgO成膜中においてMgO層に電流が流れることが防止され、その結果、MgO層の膜質の劣化防止、ひいては磁気抵抗効果素子の特性の悪化を回避することができたものと考えられる。
3 第2の強磁性層
4 MgO層
5 Ru層
6 CoFe層
8 反強磁性層(PtMn)
9 下部電極層
10 上部電極層
10a 上部電極層(Ta)
10b 上部電極層(Ta)
10c 上部電極層(Cu)
11 酸化防止層
12、120 基板
21 第1成膜室
22 仕切板
23 ターゲット取付部
24 ターゲット(MgO)
25 ターゲット取付部
26 ターゲット(Ta)
27、28 シャッタ
29 基板保持部
31 シャッタ
34 バルブ
35 真空排気手段
36 防着シールド
37 成膜室内壁
41 第2成膜室
42 第3成膜室
43 搬送室
44 ロードロック室
45 アンロードロック室
46 第1のTa成膜手段
47 MgO成膜手段
48 PtMn成膜手段
49 CoFe成膜手段
50 Ta成膜手段
51 Ru成膜手段
52 CoFeB成膜手段
61a 第1のTa層
61b 第2のTa層
62 CuN層
62a 第1のCuN層
62b 第2のCuN層
64、640 下部電極層
65 CuN成膜手段
66 Mg層
67 Mg成膜手段
68 下地層(Ta)
69 下地層(Ru)
80 反強磁性層(IrMn)
290 基板載置台
295 マスク
Claims (1)
- 酸化性ガスに対するゲッタ効果がMgOより大きい物質(但し、Ta、CuN、CoFe、Ru、CoFeB、Ti、Mg、Cr、及びZrの1以上からなる、金属又は半導体を除く)を含有するターゲットをスパッタリングして、成膜室の内壁に被着する第一工程と、
前記第一工程後に、前記成膜室においてMgOターゲットに高周波電力を印加してスパッタリング法によりMgO層を形成する第二工程と、を有すること
を特徴とする磁気抵抗効果素子の製造方法。
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JP2009065181A true JP2009065181A (ja) | 2009-03-26 |
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JP5260225B2 JP5260225B2 (ja) | 2013-08-14 |
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JP2008260231A Active JP5260225B2 (ja) | 2006-03-03 | 2008-10-07 | 磁気抵抗効果素子の製造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011093334A1 (ja) * | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
WO2015064194A1 (ja) * | 2013-10-30 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JPWO2014024358A1 (ja) * | 2012-08-10 | 2016-07-25 | キヤノンアネルバ株式会社 | トンネル磁気抵抗素子の製造装置 |
US9790590B2 (en) | 2012-05-31 | 2017-10-17 | Tokyo Electron Limited | Vacuum-processing apparatus, vacuum-processing method, and storage medium |
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US9461242B2 (en) * | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
CN110565059B (zh) * | 2019-09-10 | 2021-09-17 | 天津大学 | 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置 |
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Cited By (9)
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WO2011093334A1 (ja) * | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
JP5513529B2 (ja) * | 2010-01-26 | 2014-06-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
US9428828B2 (en) | 2010-01-26 | 2016-08-30 | Canon Anelva Corporation | Film forming method, film forming apparatus and control unit for the film forming apparatus |
US9790590B2 (en) | 2012-05-31 | 2017-10-17 | Tokyo Electron Limited | Vacuum-processing apparatus, vacuum-processing method, and storage medium |
JPWO2014024358A1 (ja) * | 2012-08-10 | 2016-07-25 | キヤノンアネルバ株式会社 | トンネル磁気抵抗素子の製造装置 |
WO2015064194A1 (ja) * | 2013-10-30 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JPWO2015064194A1 (ja) * | 2013-10-30 | 2017-03-09 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
KR101813420B1 (ko) * | 2013-10-30 | 2017-12-28 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 및 성막 방법 |
US10309005B2 (en) | 2013-10-30 | 2019-06-04 | Tokyo Electron Limited | Deposition device and deposition method |
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Publication number | Publication date |
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CN101395732A (zh) | 2009-03-25 |
JP4679595B2 (ja) | 2011-04-27 |
CN101615653A (zh) | 2009-12-30 |
JP5260225B2 (ja) | 2013-08-14 |
JP2008172266A (ja) | 2008-07-24 |
CN101615653B (zh) | 2012-07-18 |
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