JP2014524974A5 - - Google Patents
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- Publication number
- JP2014524974A5 JP2014524974A5 JP2014515996A JP2014515996A JP2014524974A5 JP 2014524974 A5 JP2014524974 A5 JP 2014524974A5 JP 2014515996 A JP2014515996 A JP 2014515996A JP 2014515996 A JP2014515996 A JP 2014515996A JP 2014524974 A5 JP2014524974 A5 JP 2014524974A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- layer
- depositing
- substrate
- inducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003989 dielectric material Substances 0.000 claims 44
- 238000000034 method Methods 0.000 claims 31
- 238000000151 deposition Methods 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 13
- 230000001939 inductive effect Effects 0.000 claims 10
- 238000001771 vacuum deposition Methods 0.000 claims 9
- 230000000694 effects Effects 0.000 claims 6
- 238000010849 ion bombardment Methods 0.000 claims 6
- 238000004544 sputter deposition Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910012305 LiPON Inorganic materials 0.000 claims 3
- 239000012300 argon atmosphere Substances 0.000 claims 3
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161498480P | 2011-06-17 | 2011-06-17 | |
| US61/498,480 | 2011-06-17 | ||
| PCT/US2012/042487 WO2012174260A2 (en) | 2011-06-17 | 2012-06-14 | Pinhole-free dielectric thin film fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014524974A JP2014524974A (ja) | 2014-09-25 |
| JP2014524974A5 true JP2014524974A5 (enExample) | 2015-08-06 |
| JP6076969B2 JP6076969B2 (ja) | 2017-02-08 |
Family
ID=47352811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014515996A Expired - Fee Related JP6076969B2 (ja) | 2011-06-17 | 2012-06-14 | ピンホールフリー誘電体薄膜製造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9593405B2 (enExample) |
| JP (1) | JP6076969B2 (enExample) |
| KR (1) | KR101942961B1 (enExample) |
| CN (2) | CN106947948A (enExample) |
| WO (1) | WO2012174260A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9007674B2 (en) | 2011-09-30 | 2015-04-14 | View, Inc. | Defect-mitigation layers in electrochromic devices |
| US11599003B2 (en) | 2011-09-30 | 2023-03-07 | View, Inc. | Fabrication of electrochromic devices |
| US20170038658A1 (en) | 2011-09-30 | 2017-02-09 | View, Inc. | Particle removal during fabrication of electrochromic devices |
| JP6250540B2 (ja) | 2011-08-08 | 2017-12-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レーザパターニングのための一体化された光および熱遮蔽層を有する薄膜構造およびデバイス |
| US12061402B2 (en) | 2011-12-12 | 2024-08-13 | View, Inc. | Narrow pre-deposition laser deletion |
| US11865632B2 (en) | 2011-12-12 | 2024-01-09 | View, Inc. | Thin-film devices and fabrication |
| US12403676B2 (en) | 2011-12-12 | 2025-09-02 | View Operating Corporation | Thin-film devices and fabrication |
| US10802371B2 (en) | 2011-12-12 | 2020-10-13 | View, Inc. | Thin-film devices and fabrication |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
| JP6194958B2 (ja) * | 2013-08-26 | 2017-09-13 | 富士通株式会社 | 全固体型二次電池、その製造方法及び電子機器 |
| WO2015102836A1 (en) | 2014-01-02 | 2015-07-09 | Applied Materials, Inc. | Solid state electrolyte and barrier on lithium metal and its methods |
| US9746678B2 (en) * | 2014-04-11 | 2017-08-29 | Applied Materials | Light wave separation lattices and methods of forming light wave separation lattices |
| JP2018500721A (ja) * | 2014-10-31 | 2018-01-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 電気化学デバイス層の堆積とレーザ処理の統合 |
| US12235560B2 (en) | 2014-11-25 | 2025-02-25 | View, Inc. | Faster switching electrochromic devices |
| CA2980477A1 (en) | 2015-03-20 | 2016-09-29 | View, Inc. | Faster switching low-defect electrochromic windows |
| US20170301926A1 (en) | 2016-04-14 | 2017-10-19 | Applied Materials, Inc. | System and method for maskless thin film battery fabrication |
| EP3500891A4 (en) | 2016-08-22 | 2020-03-25 | View, Inc. | ELECTROCHROMIC WINDOWS WITH ELECTROMAGNETIC SHIELDING |
| FR3062962B1 (fr) * | 2017-02-16 | 2019-03-29 | Stmicroelectronics (Tours) Sas | Procede de fabrication d'une batterie au lithium |
| CN109763101A (zh) * | 2019-01-30 | 2019-05-17 | 南京大学 | 一种制备超薄无针孔介电薄膜的方法 |
| CN114525471B (zh) * | 2022-02-18 | 2024-03-19 | 辽宁师范大学 | 质子交换膜燃料电池不锈钢双极板高质量Cr基涂层制备方法 |
| CN116504987A (zh) * | 2022-12-23 | 2023-07-28 | 安迈特科技(北京)有限公司 | 复合集流体及其制备方法和应用以及锂离子电池 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798521B2 (ja) | 1986-08-20 | 1995-10-25 | 澁谷工業株式会社 | 回転式重量充填装置 |
| JPS63291874A (ja) * | 1987-05-26 | 1988-11-29 | Shinagawa Refract Co Ltd | イットリア質耐火成形体 |
| JPH01319678A (ja) * | 1988-06-21 | 1989-12-25 | Agency Of Ind Science & Technol | プラズマ処理による膜改質方法 |
| JPH0236549A (ja) * | 1988-07-27 | 1990-02-06 | Ricoh Co Ltd | 薄膜デバイス |
| JPH0747820B2 (ja) | 1989-09-22 | 1995-05-24 | 株式会社日立製作所 | 成膜装置 |
| JPH0429319A (ja) * | 1990-05-24 | 1992-01-31 | Kanegafuchi Chem Ind Co Ltd | 半導体素子及びその製造方法 |
| US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| JPH11145279A (ja) * | 1997-10-27 | 1999-05-28 | Shijie Xianjin Jiti Electric Co Ltd | 窒化シリコン保護膜のピンホール除去方法 |
| JP2000113428A (ja) * | 1998-10-08 | 2000-04-21 | Tdk Corp | 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法 |
| US6863399B1 (en) * | 2000-01-04 | 2005-03-08 | David A. Newsome | Flash recovery timer and warning device, with recorder |
| KR100341407B1 (ko) * | 2000-05-01 | 2002-06-22 | 윤덕용 | 플라즈마 처리에 의한 리튬전이금속 산화물 박막의 결정화방법 |
| US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| US9708707B2 (en) * | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
| US6911280B1 (en) * | 2001-12-21 | 2005-06-28 | Polyplus Battery Company | Chemical protection of a lithium surface |
| US7247221B2 (en) | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
| US6835493B2 (en) | 2002-07-26 | 2004-12-28 | Excellatron Solid State, Llc | Thin film battery |
| KR100467436B1 (ko) | 2002-10-18 | 2005-01-24 | 삼성에스디아이 주식회사 | 리튬-황 전지용 음극, 그의 제조 방법 및 그를 포함하는리튬-황 전지 |
| US7476602B2 (en) * | 2005-01-31 | 2009-01-13 | Texas Instruments Incorporated | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films |
| JP2007273249A (ja) * | 2006-03-31 | 2007-10-18 | Arisawa Mfg Co Ltd | リチウムイオン二次電池の製造方法 |
| TW200919803A (en) * | 2007-06-07 | 2009-05-01 | Koninkl Philips Electronics Nv | Solid-state battery and method for manufacturing of such a solid-state battery |
| CN101267057A (zh) * | 2008-05-08 | 2008-09-17 | 复旦大学 | 高比能可充式全固态锂空气电池 |
| US8568571B2 (en) * | 2008-05-21 | 2013-10-29 | Applied Materials, Inc. | Thin film batteries and methods for manufacturing same |
| JP2010251113A (ja) * | 2009-04-15 | 2010-11-04 | Sony Corp | 固体電解質電池の製造方法および固体電解質電池 |
| JP5515665B2 (ja) * | 2009-11-18 | 2014-06-11 | ソニー株式会社 | 固体電解質電池、正極活物質および電池 |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
-
2012
- 2012-06-14 JP JP2014515996A patent/JP6076969B2/ja not_active Expired - Fee Related
- 2012-06-14 US US13/523,790 patent/US9593405B2/en not_active Expired - Fee Related
- 2012-06-14 CN CN201611217409.4A patent/CN106947948A/zh active Pending
- 2012-06-14 WO PCT/US2012/042487 patent/WO2012174260A2/en not_active Ceased
- 2012-06-14 CN CN201280029540.1A patent/CN103608966B/zh not_active Expired - Fee Related
- 2012-06-14 KR KR1020147001252A patent/KR101942961B1/ko not_active Expired - Fee Related
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