JP2008205459A5 - - Google Patents

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Publication number
JP2008205459A5
JP2008205459A5 JP2008029329A JP2008029329A JP2008205459A5 JP 2008205459 A5 JP2008205459 A5 JP 2008205459A5 JP 2008029329 A JP2008029329 A JP 2008029329A JP 2008029329 A JP2008029329 A JP 2008029329A JP 2008205459 A5 JP2008205459 A5 JP 2008205459A5
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JP
Japan
Prior art keywords
copper
chamber
target
substrate
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2008029329A
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English (en)
Japanese (ja)
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JP2008205459A (ja
Filing date
Publication date
Priority claimed from US11/838,796 external-priority patent/US20080190760A1/en
Application filed filed Critical
Publication of JP2008205459A publication Critical patent/JP2008205459A/ja
Publication of JP2008205459A5 publication Critical patent/JP2008205459A5/ja
Abandoned legal-status Critical Current

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JP2008029329A 2007-02-08 2008-02-08 再スパッタされる銅シード層 Abandoned JP2008205459A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88889307P 2007-02-08 2007-02-08
US11/838,796 US20080190760A1 (en) 2007-02-08 2007-08-14 Resputtered copper seed layer

Publications (2)

Publication Number Publication Date
JP2008205459A JP2008205459A (ja) 2008-09-04
JP2008205459A5 true JP2008205459A5 (enExample) 2011-03-24

Family

ID=39684902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008029329A Abandoned JP2008205459A (ja) 2007-02-08 2008-02-08 再スパッタされる銅シード層

Country Status (5)

Country Link
US (1) US20080190760A1 (enExample)
JP (1) JP2008205459A (enExample)
KR (1) KR20080074744A (enExample)
CN (1) CN101240413A (enExample)
TW (1) TW200905005A (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US7994047B1 (en) * 2005-11-22 2011-08-09 Spansion Llc Integrated circuit contact system
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) * 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8252690B2 (en) * 2008-02-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. In situ Cu seed layer formation for improving sidewall coverage
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
US20100096255A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc. Gap fill improvement methods for phase-change materials
US8436404B2 (en) * 2009-12-30 2013-05-07 Intel Corporation Self-aligned contacts
CN102290370A (zh) * 2010-06-21 2011-12-21 无锡华润上华半导体有限公司 导电插塞的制作方法
US8563428B2 (en) * 2010-09-17 2013-10-22 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
WO2012039932A2 (en) * 2010-09-21 2012-03-29 Applied Materials, Inc. Methods for forming layers on a substrate
JP5392215B2 (ja) * 2010-09-28 2014-01-22 東京エレクトロン株式会社 成膜方法及び成膜装置
US20120108072A1 (en) * 2010-10-29 2012-05-03 Angelov Ivelin A Showerhead configurations for plasma reactors
CN102036460B (zh) * 2010-12-10 2013-01-02 西安交通大学 平板式等离子体发生装置
JP5788785B2 (ja) * 2011-01-27 2015-10-07 東京エレクトロン株式会社 Ｃｕ配線の形成方法および成膜システム
US9315899B2 (en) 2012-06-15 2016-04-19 Novellus Systems, Inc. Contoured showerhead for improved plasma shaping and control
US8729702B1 (en) 2012-11-20 2014-05-20 Stmicroelectronics, Inc. Copper seed layer for an interconnect structure having a doping concentration level gradient
CN104878353A (zh) * 2014-02-27 2015-09-02 烟台大丰轴瓦有限责任公司 一种真空磁控轴瓦减磨合金层溅镀工艺
KR102246880B1 (ko) 2015-02-10 2021-04-30 삼성전자 주식회사 집적회로 소자 및 그 제조 방법
JP6171108B2 (ja) * 2015-02-25 2017-07-26 株式会社アルバック 成膜装置及び成膜方法
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US10227691B2 (en) 2015-12-21 2019-03-12 IonQuest LLC Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond like films
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
JP6824701B2 (ja) * 2016-11-10 2021-02-03 株式会社アルバック 成膜方法及び成膜装置
AT519107B1 (de) * 2017-01-23 2018-04-15 Miba Gleitlager Austria Gmbh Verfahren zur Herstellung eines Mehrschichtgleitlagerelementes
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
CN111508926B (zh) * 2019-01-31 2022-08-30 奥特斯(中国)有限公司 一种部件承载件以及制造部件承载件的方法
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
CN112466757B (zh) * 2020-11-24 2024-06-21 北京北方华创微电子装备有限公司 薄膜沉积方法及基片
KR20210059676A (ko) 2021-05-04 2021-05-25 삼성전자주식회사 반도체 장치 제조 방법
US20230017383A1 (en) * 2021-07-14 2023-01-19 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN114927413B (zh) * 2022-07-19 2022-11-04 广州粤芯半导体技术有限公司 粘附金属层的溅射方法及半导体器件的制造方法
CN115584469A (zh) * 2022-09-13 2023-01-10 北京智慧能源研究院 一种增加碳化硅台阶金属层覆盖厚度的方法及相关设备
US20250157790A1 (en) * 2023-11-10 2025-05-15 Applied Materials, Inc. Apparatus and method of damage mitigation and step coverage enhancement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1384257A2 (en) * 2001-05-04 2004-01-28 Tokyo Electron Limited Ionized pvd with sequential deposition and etching
US6899796B2 (en) * 2003-01-10 2005-05-31 Applied Materials, Inc. Partially filling copper seed layer
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7294574B2 (en) * 2004-08-09 2007-11-13 Applied Materials, Inc. Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement

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