JP2013538295A5 - - Google Patents

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Publication number
JP2013538295A5
JP2013538295A5 JP2013529193A JP2013529193A JP2013538295A5 JP 2013538295 A5 JP2013538295 A5 JP 2013538295A5 JP 2013529193 A JP2013529193 A JP 2013529193A JP 2013529193 A JP2013529193 A JP 2013529193A JP 2013538295 A5 JP2013538295 A5 JP 2013538295A5
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JP
Japan
Prior art keywords
substrate
opening
power
metal atoms
applying
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JP2013529193A
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English (en)
Japanese (ja)
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JP2013538295A (ja
JP5897013B2 (ja
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Priority claimed from US13/223,788 external-priority patent/US8563428B2/en
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Publication of JP2013538295A5 publication Critical patent/JP2013538295A5/ja
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JP2013529193A 2010-09-17 2011-09-06 高アスペクト比特徴部に金属を堆積させる方法 Active JP5897013B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US38402810P 2010-09-17 2010-09-17
US61/384,028 2010-09-17
US13/223,788 2011-09-01
US13/223,788 US8563428B2 (en) 2010-09-17 2011-09-01 Methods for depositing metal in high aspect ratio features
PCT/US2011/050507 WO2012036936A2 (en) 2010-09-17 2011-09-06 Methods for depositing metal in high aspect ratio features

Publications (3)

Publication Number Publication Date
JP2013538295A JP2013538295A (ja) 2013-10-10
JP2013538295A5 true JP2013538295A5 (enExample) 2014-10-30
JP5897013B2 JP5897013B2 (ja) 2016-03-30

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ID=45832171

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JP2013529193A Active JP5897013B2 (ja) 2010-09-17 2011-09-06 高アスペクト比特徴部に金属を堆積させる方法

Country Status (6)

Country Link
US (1) US8563428B2 (enExample)
JP (1) JP5897013B2 (enExample)
KR (1) KR20140001203A (enExample)
CN (1) CN103180483B (enExample)
TW (1) TWI491748B (enExample)
WO (1) WO2012036936A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
JP6082165B2 (ja) * 2014-05-22 2017-02-15 キヤノンアネルバ株式会社 金属膜および金属膜の成膜方法
JP6329839B2 (ja) * 2014-07-29 2018-05-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10927449B2 (en) * 2017-01-25 2021-02-23 Applied Materials, Inc. Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment
US10388533B2 (en) * 2017-06-16 2019-08-20 Applied Materials, Inc. Process integration method to tune resistivity of nickel silicide
WO2019060069A1 (en) * 2017-09-21 2019-03-28 Applied Materials, Inc. High aspect ratio deposition
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN111524782B (zh) * 2019-02-05 2023-07-25 东京毅力科创株式会社 等离子体处理装置
US11674216B2 (en) * 2019-12-24 2023-06-13 Applied Materials, Inc. Methods and apparatus for depositing aluminum by physical vapor deposition (PVD) with controlled cooling
JP7374826B2 (ja) * 2020-03-19 2023-11-07 キオクシア株式会社 テンプレートの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10130832A (ja) * 1996-11-01 1998-05-19 Anelva Corp 低圧遠隔スパッタ装置
KR100365643B1 (ko) * 2000-10-09 2002-12-26 삼성전자 주식회사 반도체 장치의 다마신 배선 형성 방법 및 그에 의해형성된 다마신 배선 구조체
US6642146B1 (en) * 2001-03-13 2003-11-04 Novellus Systems, Inc. Method of depositing copper seed on semiconductor substrates
US20060014378A1 (en) 2004-07-14 2006-01-19 Sanjeev Aggarwal System and method to form improved seed layer
US7399943B2 (en) * 2004-10-05 2008-07-15 Applied Materials, Inc. Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
JP4456027B2 (ja) * 2005-03-25 2010-04-28 Ｏｋｉセミコンダクタ株式会社 貫通導電体の製造方法
US7682966B1 (en) * 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US20080190760A1 (en) * 2007-02-08 2008-08-14 Applied Materials, Inc. Resputtered copper seed layer
US7629255B2 (en) 2007-06-04 2009-12-08 Lam Research Corporation Method for reducing microloading in etching high aspect ratio structures
US9856558B2 (en) * 2008-03-14 2018-01-02 Applied Materials, Inc. Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
WO2010004890A1 (ja) * 2008-07-11 2010-01-14 キヤノンアネルバ株式会社 薄膜の成膜方法
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
JP2010129952A (ja) * 2008-12-01 2010-06-10 Nippon Telegr & Teleph Corp <Ntt> 貫通電極配線の製造方法
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features

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