CN103180483B - 用于在高深宽比的特征结构中沉积金属的方法 - Google Patents

用于在高深宽比的特征结构中沉积金属的方法 Download PDF

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Publication number
CN103180483B
CN103180483B CN201180051170.7A CN201180051170A CN103180483B CN 103180483 B CN103180483 B CN 103180483B CN 201180051170 A CN201180051170 A CN 201180051170A CN 103180483 B CN103180483 B CN 103180483B
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substrate
metal atoms
power
target
opening
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Expired - Fee Related
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CN201180051170.7A
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English (en)
Chinese (zh)
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CN103180483A (zh
Inventor
卡尔·布朗
艾伦·里奇
约翰·皮比通
芮英
丹尼尔·J·霍夫曼
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201180051170.7A 2010-09-17 2011-09-06 用于在高深宽比的特征结构中沉积金属的方法 Expired - Fee Related CN103180483B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US38402810P 2010-09-17 2010-09-17
US61/384,028 2010-09-17
US13/223,788 2011-09-01
US13/223,788 US8563428B2 (en) 2010-09-17 2011-09-01 Methods for depositing metal in high aspect ratio features
PCT/US2011/050507 WO2012036936A2 (en) 2010-09-17 2011-09-06 Methods for depositing metal in high aspect ratio features

Publications (2)

Publication Number Publication Date
CN103180483A CN103180483A (zh) 2013-06-26
CN103180483B true CN103180483B (zh) 2015-09-23

Family

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CN201180051170.7A Expired - Fee Related CN103180483B (zh) 2010-09-17 2011-09-06 用于在高深宽比的特征结构中沉积金属的方法

Country Status (6)

Country Link
US (1) US8563428B2 (enExample)
JP (1) JP5897013B2 (enExample)
KR (1) KR20140001203A (enExample)
CN (1) CN103180483B (enExample)
TW (1) TWI491748B (enExample)
WO (1) WO2012036936A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
JP6082165B2 (ja) * 2014-05-22 2017-02-15 キヤノンアネルバ株式会社 金属膜および金属膜の成膜方法
JP6329839B2 (ja) * 2014-07-29 2018-05-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10927449B2 (en) * 2017-01-25 2021-02-23 Applied Materials, Inc. Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment
US10388533B2 (en) * 2017-06-16 2019-08-20 Applied Materials, Inc. Process integration method to tune resistivity of nickel silicide
WO2019060069A1 (en) * 2017-09-21 2019-03-28 Applied Materials, Inc. High aspect ratio deposition
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN111524782B (zh) * 2019-02-05 2023-07-25 东京毅力科创株式会社 等离子体处理装置
US11674216B2 (en) * 2019-12-24 2023-06-13 Applied Materials, Inc. Methods and apparatus for depositing aluminum by physical vapor deposition (PVD) with controlled cooling
JP7374826B2 (ja) * 2020-03-19 2023-11-07 キオクシア株式会社 テンプレートの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020041028A1 (en) * 2000-10-09 2002-04-11 Seung-Man Choi Method for forming damascene interconnection of semiconductor device and damascene interconnection fabricated thereby
US6642146B1 (en) * 2001-03-13 2003-11-04 Novellus Systems, Inc. Method of depositing copper seed on semiconductor substrates
US20060014378A1 (en) * 2004-07-14 2006-01-19 Sanjeev Aggarwal System and method to form improved seed layer
CN101730930A (zh) * 2007-06-04 2010-06-09 朗姆研究公司 在蚀刻高纵横比结构中降低微负载的方法

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Publication number Priority date Publication date Assignee Title
JPH10130832A (ja) * 1996-11-01 1998-05-19 Anelva Corp 低圧遠隔スパッタ装置
US7399943B2 (en) * 2004-10-05 2008-07-15 Applied Materials, Inc. Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
JP4456027B2 (ja) * 2005-03-25 2010-04-28 Ｏｋｉセミコンダクタ株式会社 貫通導電体の製造方法
US7682966B1 (en) * 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US20080190760A1 (en) * 2007-02-08 2008-08-14 Applied Materials, Inc. Resputtered copper seed layer
US9856558B2 (en) * 2008-03-14 2018-01-02 Applied Materials, Inc. Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
WO2010004890A1 (ja) * 2008-07-11 2010-01-14 キヤノンアネルバ株式会社 薄膜の成膜方法
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
JP2010129952A (ja) * 2008-12-01 2010-06-10 Nippon Telegr & Teleph Corp <Ntt> 貫通電極配線の製造方法
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020041028A1 (en) * 2000-10-09 2002-04-11 Seung-Man Choi Method for forming damascene interconnection of semiconductor device and damascene interconnection fabricated thereby
US6642146B1 (en) * 2001-03-13 2003-11-04 Novellus Systems, Inc. Method of depositing copper seed on semiconductor substrates
US20060014378A1 (en) * 2004-07-14 2006-01-19 Sanjeev Aggarwal System and method to form improved seed layer
CN101730930A (zh) * 2007-06-04 2010-06-09 朗姆研究公司 在蚀刻高纵横比结构中降低微负载的方法

Also Published As

Publication number Publication date
TWI491748B (zh) 2015-07-11
JP2013538295A (ja) 2013-10-10
JP5897013B2 (ja) 2016-03-30
TW201226600A (en) 2012-07-01
US8563428B2 (en) 2013-10-22
WO2012036936A2 (en) 2012-03-22
CN103180483A (zh) 2013-06-26
US20120149192A1 (en) 2012-06-14
KR20140001203A (ko) 2014-01-06
WO2012036936A3 (en) 2012-05-31

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