WO2015102836A1 - Solid state electrolyte and barrier on lithium metal and its methods - Google Patents
Solid state electrolyte and barrier on lithium metal and its methods Download PDFInfo
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- WO2015102836A1 WO2015102836A1 PCT/US2014/069566 US2014069566W WO2015102836A1 WO 2015102836 A1 WO2015102836 A1 WO 2015102836A1 US 2014069566 W US2014069566 W US 2014069566W WO 2015102836 A1 WO2015102836 A1 WO 2015102836A1
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- layer
- dielectric material
- depositing
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- lithium metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1397—Processes of manufacture of electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/058—Construction or manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
- H01M4/0426—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/5825—Oxygenated metallic salts or polyanionic structures, e.g. borates, phosphates, silicates, olivines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiments of the present disclosure relate generally to thin film deposition and more specifically to methods for depositing a solid state electrolyte layer such as LiPON onto lithium metal, and related devices and deposition apparatus.
- FIG. 1 shows a cross-sectional representation of a typical thin film battery (TFB).
- the TFB device structure 100 with anode current collector 103 and cathode current collector 102 are formed on a substrate 101 , followed by cathode 104, electrolyte 105 and anode 106; although the device may be fabricated with the cathode, electrolyte and anode in reverse order.
- the cathode current collector (CCC) and anode current collector (ACC) may be deposited separately.
- the CCC may be deposited before the cathode and the ACC may be deposited after the electrolyte.
- the device may be covered by an encapsulation layer 107 to protect the environmentally sensitive layers from oxidizing agents. See, for example, N. J. Dudney, Materials Science and Engineering B 1 16, (2005) 245-249. Note that the component layers are not drawn to scale in the TFB device shown in FIG. 1.
- LiPON Lithium Phosporous Oxynitride
- a dielectric material such as Lithium Phosporous Oxynitride (LiPON) - is sandwiched between two electrodes - the anode and cathode.
- LiPON is a chemically stable solid state electrolyte with a wide working voltage range (up to 5.5 V) and relatively high ionic conductivity (1 - 2 ⁇ 8/ ⁇ ).
- Solid state batteries, especially the thin film version contain LiPON as an electrolyte as such cells are capable of more than 20,000 charge/discharge cycles with only 0.001 % capacity loss/cycle.
- the conventional method used to deposit LiPON is physical vapor deposition (PVD) radio frequency (RF) sputtering of a L13PO4 target in a N 2 ambient.
- PVD physical vapor deposition
- RF radio frequency
- Present disclosures include methods of depositing a solid state electrolyte layer such as LiPON, which is an electrolyte material used in high energy density solid state batteries, onto lithium metal.
- a solid state electrolyte layer such as LiPON, which is an electrolyte material used in high energy density solid state batteries
- LiPON an electrolyte material used in high energy density solid state batteries
- a very thin (l Onm - 100 nm) L13PO4 layer which is also a solid state electrolyte, though of lower ionic conductivity, is first deposited on the lithium metal in a 100%) Ar atmosphere using a L13PO4 target.
- the L13PO4 film deposition is then followed by a nitrogen plasma treatment to improve the ionic conductivity of the L13PO4 film and then LiPON deposition to a desired thickness in a pure nitrogen atmosphere with the same target.
- a method of fabricating an electrochemical device comprising a lithium metal electrode may comprise: providing a substrate with a lithium metal electrode on the surface thereof; depositing a first layer of dielectric material on the lithium metal electrode, the depositing the first layer of dielectric material being sputtering L13PO4 in an argon ambient; after the depositing the first layer of dielectric material, inducing and maintaining a nitrogen plasma over the first layer of dielectric material to provide ion bombardment of the first layer of dielectric material for incorporation of nitrogen therein; and after the depositing, the inducing and the maintaining, depositing a second layer of dielectric material on the ion bombarded first Jayer of dielectric material, the depositing the second layer of dielectric material being sputtering L13PO4 in a nitrogen-containing ambient.
- an electrochemical device may comprise: a substrate with a lithium metal electrode on the surface thereof; an ion bombarded first layer of dielectric material on the lithium metal electrode, the ion bombarded first layer of dielectric material being a layer of material formed by sputtering a L13PO4 target in an argon ambient followed by plasma treatment in a nitrogen containing ambient; a second layer of dielectric material on the ion bombarded first layer of dielectric material, the second layer of dielectric material being formed by sputtering L13PO4 in a nitrogen-containing ambient; and a second electrode on the second layer of dielectric material.
- this disclosure provides tools configured for carrying out the methods of the present disclosure as described herein.
- FIG. 1 is a cross-sectional representation of a prior art thin film battery
- FIG. 2 is a schematic representation of a deposition system, according to some embodiments of the present disclosure.
- FIG. 3 is a flow chart for deposition of a solid state electrolyte and a barrier layer thin film on a lithium metal electrode of an electrochemical device, according to some embodiments of the present disclosure
- FIG. 4 is a cross-sectional representation of a vertical stack thin film battery, according to some embodiments of the present disclosure
- FIG. 5 is a schematic illustration of a thin film deposition cluster tool, according to some embodiments of the present disclosure.
- FIG. 6 is a representation of a thin film deposition system with multiple in-line tools, according to some embodiments of the present disclosure.
- FIG. 7 is a representation of an in-line deposition tool, according to some embodiments of the present disclosure.
- LiPON layer on a lithium metal surface is desired in various electrochemical devices, including a TFB.
- the conventional method used to deposit LiPON is physical vapor deposition (PVD) radio frequency (RF) sputtering of a L13PO4 target in a nitrogen ambient.
- PVD physical vapor deposition
- RF radio frequency
- Li 3 N 6Li + N 2 ⁇ 2 Li 3 N, once the substrate (lithium metal) meets the nitrogen plasma before the LiPON can cover it up.
- the product, L 3 N has a very small voltage range (-0.4 V) vs, Li reference electrode. While formation of Li 3 N in itself is not an issue (Li 3 N is a Li ion conductor), we find that the reaction is not self-limiting but continues to eat up the lithium metal, the charge carrier for the battery, leaving only the charge carriers in the cathode for the battery operation. Here, we are assuming that the cathode is deposited in a lithiated, fully discharged state, from which the cycling carriers are drawn.
- Such cells without a reservoir of additional Li ion charge carriers typically show lower cyclability and capacity retention as the loss of charge carriers, Li, by various mechanisms over the life of the battery, directly affects the capacity and the cycle life. Therefore, a viable method of depositing LiPON onto lithium metal is key in fabricating high performance functional batteries, of the types described above,
- the thin Li 3 P0 4 barrier layer sputtered in Ar only, effectively prevents lithium metal from contacting nitrogen plasma during the subsequent step of forming the LiPON, This effectively avoids the reaction between lithium metal and nitrogen plasma described above when the LiPON layer is actually deposited.
- the whole process can take place in the same sputtering chamber in a continuous manner with no air break, no solution processing, and thus, no additional cost.
- batch processing tools like the Applied Materials EnduraTM may be used.
- the substrates move continuously in front of multiple adjacent targets
- the nitrogen plasma treatment is incorporated after the L13PO4 layer is first deposited. This will not only increase the ionic conductivity, but also the pinhole remediation effect of the plasma treatment will allow better protection during the subsequent LiPON deposition step,
- Ar plasma may provide pinhole remediation
- nitrogen plasma may provide both ionic conductivity and pinhole remediation.
- FIG. 2 shows a schematic representation of an example of a deposition tool 200 configured for deposition methods according to the present disclosure.
- the deposition tool 200 includes a vacuum chamber 201 , a sputter target 202, a substrate 204 and a substrate pedestal 205,
- the target 202 may be L13PO4 and a suitable substrate 204 may be silicon, silicon nitride on Si, glass, PET (polyethylene terephthalate), mica, metal foils such as copper, etc., with current collector(s) and electrode layer(s) already deposited and patterned, if necessary. See FIGS. 1 & 4, for example.
- the chamber 201 has a vacuum pump system 206 and a process gas delivery system 207, Multiple power sources are connected to the target. Each target power source has a matching network for handling radio frequency (RF) power supplies.
- RF radio frequency
- a filter is used to enable use of two power sources operating at different frequencies, where the filter acts to protect the target power supply operating at the lower frequency from damage due to higher frequencies.
- multiple power sources are connected to the substrate. Each power source connected to the substrate has a matching network for handling radio frequency (RF) power supplies.
- RF radio frequency
- one or more of the power sources connected to the substrate can be a DC source, a pulsed DC (pDC) source, an RF source, etc.
- one or more of the target power sources can be a DC source, a pDC source, an RF source, etc.
- a frequency of less than 1 MHz may be used.
- Table 1 provides example configurations of power sources for sputter deposition and plasma pinhole filling processes according to some embodiments of the present disclosure.
- Sputter depositions #1 and #2 may be used to sputter deposit a material such as LiPON or L13PO4 using a L13PO4 target in a nitrogen or argon ambient (in the case of the latter, a subsequent nitrogen plasma treatment, which may also be part of a pinhole filling process, may be used to incorporate the nitrogen needed to improve the lithium ion ionic conductivity of the L13PO4).
- LiPON deposition on a Li metal electrode may proceed according to the general process flow of FIG. 3.
- the process flow may include: providing a substrate with a lithium metal anode (310); depositing a thin layer of L1 3 PO4 dielectric on the lithium metal anode (320); inducing and maintaining a nitrogen-containing plasma over the substrate to provide ion bombardment of the deposited layer of dielectric for compositional modification of the dielectric - incorporating nitrogen to improve the Li + ionic conductivity (330); and depositing a layer of LiPON on the
- compositionally modified L13PO4 dielectric refers to a layer of Li 3 P0 4 dielectric with a thickness of a few nanometers to a few hundred nanometers, and in embodiments a layer of thickness 10 nm to 100 nm, and further embodiments a layer of thickness 20 nm to 60 nm.
- the following method may be used to make electrochemical devices with lithium metal electrodes.
- a substrate with a lithium metal electrode thereon is provided; the substrate may be glass, silicon, copper, etc.
- a first layer of dielectric material is deposited on the lithium metal electrode by sputtering L13PO4 in an argon ambient.
- the RF target power source is turned off, and the chamber gas is changed to provide a nitrogen-containing ambient, or the substrate is moved to a different chamber with a nitrogen-containing ambient.
- RF is applied directly to the substrate using an RF substrate power source to generate a localized plasma adjacent to the substrate surface - this plasma generates energetic ions with sufficient energy to enable incorporation of nitrogen into the first layer to improve the Li + ionic conductivity.
- the plasma treatment is finished and then a second layer of dielectric material is deposited over the ion bombarded first layer by sputter deposition from a L13PO4 source in a nitrogen ambient.
- the nitrogen plasma treatment of the first layer may also be effective in eliminating any pinholes that may have formed in the first layer.
- the nitrogen plasma treatment may be done in a separate chamber to the deposition of the first layer, and furthermore that the deposition of the second layer may be done in the same chamber as the nitrogen plasma treatment, or in a different chamber.
- deposition of a thin film by sputtering a L13PO4 target with argon appears to also improve the efficacy of pinhole reduction in the thin film, when compared with deposition of a thin film using sputter deposition from a L13PO4 target in a nitrogen ambient. This may be because nitrogen poisons the Li 3 P0 4 target which can result in particle generation by the target and these particles can result in pinholes in the deposited films, whereas argon does not poison the target, and thus leads to reduced particle shedding and reduced pinhole formation.
- films formed by sputtering Li 3 P0 4 using argon ambient and then treated with nitrogen plasma for pinhole removal showed an improved ionic conductivity over films sputter deposited using nitrogen ambient but without a nitrogen plasma post deposition treatment,
- the improved ionic conductivity may be due to more effective incorporation of nitrogen into the LiPON film during the nitrogen plasma treatment.
- the LiPON material with nitrogen incorporation may be represented by Li a PO b N c wherein 2.5 ⁇ a ⁇ 3.5; 3.7 ⁇ b ⁇ 4.2; and 0.05 ⁇ c ⁇ 0.3.
- the higher the nitrogen content the higher the ionic conductivity the efficiency of the nitrogen plasma process for pinhole removal and improved ionic conductivity may be increased by controlling the substrate temperature.
- Table 2 below shows a sample plasma recipe for L13PO4 deposition and nitrogen plasma treatment, according to some embodiments of the present disclosure carried out on an Applied Materials 200 mm EnduraTM Standard Physical Vapor Deposition (PVD) chamber.
- PVD Physical Vapor Deposition
- Upper limit of power is due to the limit of the power supply used and does not represent the upper limit for the process as determined by target area and power density limit of the target material. It is expected that the power may be increased up to the point at which target cracking begins.
- Table 2 provides an example of process conditions for sputtering Li 3 P0 4 to form thin films, followed by plasma treatment to improve the Li + ionic conductivity, and also reduced pinhole density. This is only one example of the many varied process conditions that may be used. Note that the process scales to larger area tools. For example, an in-line tool with a 1400 mm x 190 mm rectangular Li 3 P0 4 target has been operated at l OkW. A large inline target might operate with RF power that has an upper limit determined by the target area and the power density limit of the target material.
- the process conditions may be varied from those described above.
- the deposition temperature may be higher
- the source power may be pDC
- the sputter gas may be an Ar/N 2 mixture.
- Figure 4 shows an example of an electrochemical device with a vertical stack fabricated according to methods of the present disclosure; the methods of the present disclosure may also be used to fabricate devices with the general configuration of Figure 1, although the present disclosure includes a barrier layer between the lithium metal anode and the UPON electrolyte.
- the vertical stack comprises: a substrate 410, a lithium metal anode 420, a barrier layer 430, an electrolyte layer 440 and a cathode layer 450.
- FIG. 2 shows a chamber configuration with horizontal planar target and substrate
- the target and substrate may be held in vertical planes - this configuration can assist in mitigating particle problems if the target itself generates particles.
- the position of the target and substrate may be switched, so that the substrate is held above the target.
- the substrate may be flexible and moved in front of the target by a reel to reel system
- the target may be a rotating cylindrical target
- the target may be non- planar
- the substrate may be non-planar.
- FIG. 5 is a schematic illustration of a processing system 600 for fabricating a TFB device according to some embodiments of the present disclosure.
- the processing system 600 includes a standard mechanical interface (SMIF) 610 to a cluster tool 620 equipped with a reactive plasma clean (RPC) chamber 630 and process chambers C 1 -C4 (641 -644), which may be utilized in the process steps described above.
- RPC reactive plasma clean
- a glovebox 650 may also be attached to the cluster tool if needed.
- the glovebox can store substrates in an inert environment (for example, under a noble gas such as He, Ne or Ar), which is useful after alkali metal/alkaline earth metal deposition.
- An ante chamber 660 to the glovebox may also be used if needed - the ante chamber is a gas exchange chamber (inert gas to air and vice versa) which allows substrates to be transferred in and out of the glovebox without contaminating the inert environment in the glovebox, (Note that a glovebox can be replaced with a dry room ambient of sufficiently low dew point, as used by lithium foil
- the chambers C 1-C4 can be configured for process steps for manufacturing thin film battery devices which may include: deposition of a Li metal layer on a substrate, a barrier layer of L13PO4 followed by nitrogen plasma treatment, and then deposition of an electrolyte layer (e.g. LiPON by RF sputtering a L13PO4 target in N 2 ), as described above.
- an electrolyte layer e.g. LiPON by RF sputtering a L13PO4 target in N 2
- a linear system may be utilized in which the processing chambers are arranged in a line without a transfer chamber so that the substrate continuously moves from one chamber to the next chamber.
- FIG. 6 shows a representation of an in-line fabrication system 700 with multiple in-line tools 710, 720, 730, 740, etc., according to some embodiments of the present disclosure.
- In-line tools may include tools for depositing all the layers of an electrochemical device - including TFBs, for example.
- the in-line tools may include pre- and post-conditioning chambers.
- tool 710 may be a pump down chamber for establishing a vacuum prior to the substrate moving through a vacuum airlock 715 into a deposition tool 720.
- Some or all of the in-line tools may be vacuum tools separated by vacuum airlocks 715. Note that the order of process tools and specific process tools in the process line will be determined by the particular electrochemical device fabrication method being used.
- one or more of the in-line tools may be dedicated to depositing a buffer layer on the Li metal, including a nitrogen plasma treatment for improvement of the ionic conductivity, according to some embodiments of the present disclosure, as described above,
- substrates may be moved through the in-line fabrication system oriented either horizontally or vertically.
- the in-line system may be adapted for reel- to-reel processing of a web substrate,
- a substrate conveyer 750 is shown with only one in-line tool 710 in place.
- a substrate holder 755 containing a substrate 810 (the substrate holder is shown partially cut-away so that the substrate can be seen) is mounted on the conveyer 750, or equivalent device, for moving the holder and substrate through the in-line tool 710, as indicated.
- a suitable in-line platform for processing tool 710 with vertical substrate configuration is Applied Materials' New AristoTM.
- a suitable in-line platform for processing tool 710 with horizontal substrate configuration is Applied Materials' AtonTM.
- an in-line process can be implemented on a reel-to-reel system, such as Applied Materials' SmartWebTM.
- An apparatus for fabricating an electrochemical device comprising a lithium metal electrode may comprise: a first system for depositing a first layer of dielectric material on a lithium metal electrode on a substrate, the depositing the first layer of dielectric material being sputtering Li 3 P0 4 in an argon ambient; a second system for inducing and maintaining a nitrogen plasma over the first layer of dielectric material to provide ion bombardment of the first layer of dielectric material for incorporation of nitrogen therein; and a third system for depositing a second layer of dielectric material on the ion bombarded first layer of dielectric material, the depositing a second layer of dielectric material being sputtering L13PO4 in a nitrogen-containing ambient.
- the first, second and third systems may be the same system, In embodiments, the second and third systems are the same system.
- the apparatus may be a cluster tool or an in-line tool. Furthermore, in an in-line or reel-to-reel apparatus the depositing and inducing steps may be carried out in separate, adjacent systems.
- the disclosure can be used for any applications that have LiPON deposition on a lithium metal surface - for example, energy storage devices, electrochromic devices, etc.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016544148A JP2017503323A (en) | 2014-01-02 | 2014-12-10 | Solid electrolyte and barrier on lithium metal and method |
CN201480072040.5A CN105874641A (en) | 2014-01-02 | 2014-12-10 | Solid state electrolyte and barrier on lithium metal and its methods |
EP14877037.3A EP3090461A4 (en) | 2014-01-02 | 2014-12-10 | Solid state electrolyte and barrier on lithium metal and its methods |
KR1020167021008A KR20160104707A (en) | 2014-01-02 | 2014-12-10 | Solid state electrolyte and barrier on lithium metal and its methods |
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US14/146,446 | 2014-01-02 | ||
US14/146,446 US20150079481A1 (en) | 2011-06-17 | 2014-01-02 | Solid state electrolyte and barrier on lithium metal and its methods |
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WO2015102836A1 true WO2015102836A1 (en) | 2015-07-09 |
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PCT/US2014/069566 WO2015102836A1 (en) | 2014-01-02 | 2014-12-10 | Solid state electrolyte and barrier on lithium metal and its methods |
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EP (1) | EP3090461A4 (en) |
JP (1) | JP2017503323A (en) |
KR (1) | KR20160104707A (en) |
CN (1) | CN105874641A (en) |
TW (1) | TW201538769A (en) |
WO (1) | WO2015102836A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112289973A (en) * | 2019-07-22 | 2021-01-29 | 大众汽车股份公司 | Lithium ion battery pack and method of manufacturing the same |
GB2587419A (en) * | 2019-09-30 | 2021-03-31 | Ilika Tech Limited | Method of fabricating a component material for a battery cell |
CN114388895A (en) * | 2021-12-29 | 2022-04-22 | 深圳大学 | Preparation method of interface modification layer between lithium metal and garnet type solid electrolyte and solid lithium metal battery |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US10553898B2 (en) * | 2017-08-11 | 2020-02-04 | International Business Machines Corporation | Thin-film lithium ion battery with fast charging speed |
CN109216760A (en) * | 2018-10-30 | 2019-01-15 | 桑德集团有限公司 | All-solid lithium-ion battery and preparation method thereof |
KR102459678B1 (en) * | 2018-10-31 | 2022-10-28 | 주식회사 엘지에너지솔루션 | An anode for lithium secondary battery, a battery comprising the same and manufacturing method therof |
GB2588944B (en) * | 2019-11-15 | 2022-08-17 | Dyson Technology Ltd | Method of forming crystalline layer, method of forming a battery half cell |
TWI795106B (en) * | 2020-12-15 | 2023-03-01 | 美商應用材料股份有限公司 | Method of manufacturing an anode structure, vacuum deposition system, anode structure, and lithium battery layer stack |
JP2023103515A (en) | 2022-01-14 | 2023-07-27 | トヨタ自動車株式会社 | negative electrode |
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2014
- 2014-12-10 KR KR1020167021008A patent/KR20160104707A/en not_active Application Discontinuation
- 2014-12-10 JP JP2016544148A patent/JP2017503323A/en active Pending
- 2014-12-10 CN CN201480072040.5A patent/CN105874641A/en active Pending
- 2014-12-10 WO PCT/US2014/069566 patent/WO2015102836A1/en active Application Filing
- 2014-12-10 EP EP14877037.3A patent/EP3090461A4/en not_active Withdrawn
- 2014-12-31 TW TW103146596A patent/TW201538769A/en unknown
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TW201538769A (en) | 2015-10-16 |
EP3090461A4 (en) | 2017-06-14 |
KR20160104707A (en) | 2016-09-05 |
JP2017503323A (en) | 2017-01-26 |
CN105874641A (en) | 2016-08-17 |
EP3090461A1 (en) | 2016-11-09 |
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