KR101942961B1 - 핀홀 없는 유전체 박막 제조 - Google Patents
핀홀 없는 유전체 박막 제조 Download PDFInfo
- Publication number
- KR101942961B1 KR101942961B1 KR1020147001252A KR20147001252A KR101942961B1 KR 101942961 B1 KR101942961 B1 KR 101942961B1 KR 1020147001252 A KR1020147001252 A KR 1020147001252A KR 20147001252 A KR20147001252 A KR 20147001252A KR 101942961 B1 KR101942961 B1 KR 101942961B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- depositing
- dielectric
- dielectric material
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/586—Nitriding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Primary Cells (AREA)
- Secondary Cells (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161498480P | 2011-06-17 | 2011-06-17 | |
| US61/498,480 | 2011-06-17 | ||
| PCT/US2012/042487 WO2012174260A2 (en) | 2011-06-17 | 2012-06-14 | Pinhole-free dielectric thin film fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140044860A KR20140044860A (ko) | 2014-04-15 |
| KR101942961B1 true KR101942961B1 (ko) | 2019-01-28 |
Family
ID=47352811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147001252A Expired - Fee Related KR101942961B1 (ko) | 2011-06-17 | 2012-06-14 | 핀홀 없는 유전체 박막 제조 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9593405B2 (enExample) |
| JP (1) | JP6076969B2 (enExample) |
| KR (1) | KR101942961B1 (enExample) |
| CN (2) | CN106947948A (enExample) |
| WO (1) | WO2012174260A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9007674B2 (en) | 2011-09-30 | 2015-04-14 | View, Inc. | Defect-mitigation layers in electrochromic devices |
| US11599003B2 (en) | 2011-09-30 | 2023-03-07 | View, Inc. | Fabrication of electrochromic devices |
| US20170038658A1 (en) | 2011-09-30 | 2017-02-09 | View, Inc. | Particle removal during fabrication of electrochromic devices |
| JP6250540B2 (ja) | 2011-08-08 | 2017-12-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レーザパターニングのための一体化された光および熱遮蔽層を有する薄膜構造およびデバイス |
| US12061402B2 (en) | 2011-12-12 | 2024-08-13 | View, Inc. | Narrow pre-deposition laser deletion |
| US11865632B2 (en) | 2011-12-12 | 2024-01-09 | View, Inc. | Thin-film devices and fabrication |
| US12403676B2 (en) | 2011-12-12 | 2025-09-02 | View Operating Corporation | Thin-film devices and fabrication |
| US10802371B2 (en) | 2011-12-12 | 2020-10-13 | View, Inc. | Thin-film devices and fabrication |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
| JP6194958B2 (ja) * | 2013-08-26 | 2017-09-13 | 富士通株式会社 | 全固体型二次電池、その製造方法及び電子機器 |
| WO2015102836A1 (en) | 2014-01-02 | 2015-07-09 | Applied Materials, Inc. | Solid state electrolyte and barrier on lithium metal and its methods |
| US9746678B2 (en) * | 2014-04-11 | 2017-08-29 | Applied Materials | Light wave separation lattices and methods of forming light wave separation lattices |
| JP2018500721A (ja) * | 2014-10-31 | 2018-01-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 電気化学デバイス層の堆積とレーザ処理の統合 |
| US12235560B2 (en) | 2014-11-25 | 2025-02-25 | View, Inc. | Faster switching electrochromic devices |
| CA2980477A1 (en) | 2015-03-20 | 2016-09-29 | View, Inc. | Faster switching low-defect electrochromic windows |
| US20170301926A1 (en) | 2016-04-14 | 2017-10-19 | Applied Materials, Inc. | System and method for maskless thin film battery fabrication |
| EP3500891A4 (en) | 2016-08-22 | 2020-03-25 | View, Inc. | ELECTROCHROMIC WINDOWS WITH ELECTROMAGNETIC SHIELDING |
| FR3062962B1 (fr) * | 2017-02-16 | 2019-03-29 | Stmicroelectronics (Tours) Sas | Procede de fabrication d'une batterie au lithium |
| CN109763101A (zh) * | 2019-01-30 | 2019-05-17 | 南京大学 | 一种制备超薄无针孔介电薄膜的方法 |
| CN114525471B (zh) * | 2022-02-18 | 2024-03-19 | 辽宁师范大学 | 质子交换膜燃料电池不锈钢双极板高质量Cr基涂层制备方法 |
| CN116504987A (zh) * | 2022-12-23 | 2023-07-28 | 安迈特科技(北京)有限公司 | 复合集流体及其制备方法和应用以及锂离子电池 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004139968A (ja) * | 2002-10-18 | 2004-05-13 | Samsung Sdi Co Ltd | リチウム−硫黄電池用負極、その製造方法及びそれを含むリチウム−硫黄電池 |
| US20100233548A1 (en) * | 2007-06-07 | 2010-09-16 | Koninklijke Philips Electronics N.V. | Solid-state battery and method for manufacturing of such a solid-state battery |
| JP2010251113A (ja) * | 2009-04-15 | 2010-11-04 | Sony Corp | 固体電解質電池の製造方法および固体電解質電池 |
| US20100285237A1 (en) * | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798521B2 (ja) | 1986-08-20 | 1995-10-25 | 澁谷工業株式会社 | 回転式重量充填装置 |
| JPS63291874A (ja) * | 1987-05-26 | 1988-11-29 | Shinagawa Refract Co Ltd | イットリア質耐火成形体 |
| JPH01319678A (ja) * | 1988-06-21 | 1989-12-25 | Agency Of Ind Science & Technol | プラズマ処理による膜改質方法 |
| JPH0236549A (ja) * | 1988-07-27 | 1990-02-06 | Ricoh Co Ltd | 薄膜デバイス |
| JPH0747820B2 (ja) | 1989-09-22 | 1995-05-24 | 株式会社日立製作所 | 成膜装置 |
| JPH0429319A (ja) * | 1990-05-24 | 1992-01-31 | Kanegafuchi Chem Ind Co Ltd | 半導体素子及びその製造方法 |
| US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| JPH11145279A (ja) * | 1997-10-27 | 1999-05-28 | Shijie Xianjin Jiti Electric Co Ltd | 窒化シリコン保護膜のピンホール除去方法 |
| JP2000113428A (ja) * | 1998-10-08 | 2000-04-21 | Tdk Corp | 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法 |
| US6863399B1 (en) * | 2000-01-04 | 2005-03-08 | David A. Newsome | Flash recovery timer and warning device, with recorder |
| KR100341407B1 (ko) * | 2000-05-01 | 2002-06-22 | 윤덕용 | 플라즈마 처리에 의한 리튬전이금속 산화물 박막의 결정화방법 |
| US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| US6911280B1 (en) * | 2001-12-21 | 2005-06-28 | Polyplus Battery Company | Chemical protection of a lithium surface |
| US7247221B2 (en) | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
| US6835493B2 (en) | 2002-07-26 | 2004-12-28 | Excellatron Solid State, Llc | Thin film battery |
| US7476602B2 (en) * | 2005-01-31 | 2009-01-13 | Texas Instruments Incorporated | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films |
| JP2007273249A (ja) * | 2006-03-31 | 2007-10-18 | Arisawa Mfg Co Ltd | リチウムイオン二次電池の製造方法 |
| CN101267057A (zh) * | 2008-05-08 | 2008-09-17 | 复旦大学 | 高比能可充式全固态锂空气电池 |
| US8568571B2 (en) * | 2008-05-21 | 2013-10-29 | Applied Materials, Inc. | Thin film batteries and methods for manufacturing same |
| JP5515665B2 (ja) * | 2009-11-18 | 2014-06-11 | ソニー株式会社 | 固体電解質電池、正極活物質および電池 |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
-
2012
- 2012-06-14 JP JP2014515996A patent/JP6076969B2/ja not_active Expired - Fee Related
- 2012-06-14 US US13/523,790 patent/US9593405B2/en not_active Expired - Fee Related
- 2012-06-14 CN CN201611217409.4A patent/CN106947948A/zh active Pending
- 2012-06-14 WO PCT/US2012/042487 patent/WO2012174260A2/en not_active Ceased
- 2012-06-14 CN CN201280029540.1A patent/CN103608966B/zh not_active Expired - Fee Related
- 2012-06-14 KR KR1020147001252A patent/KR101942961B1/ko not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100285237A1 (en) * | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
| JP2004139968A (ja) * | 2002-10-18 | 2004-05-13 | Samsung Sdi Co Ltd | リチウム−硫黄電池用負極、その製造方法及びそれを含むリチウム−硫黄電池 |
| US20100233548A1 (en) * | 2007-06-07 | 2010-09-16 | Koninklijke Philips Electronics N.V. | Solid-state battery and method for manufacturing of such a solid-state battery |
| JP2010251113A (ja) * | 2009-04-15 | 2010-11-04 | Sony Corp | 固体電解質電池の製造方法および固体電解質電池 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014524974A (ja) | 2014-09-25 |
| CN103608966A (zh) | 2014-02-26 |
| CN106947948A (zh) | 2017-07-14 |
| WO2012174260A2 (en) | 2012-12-20 |
| WO2012174260A3 (en) | 2013-04-25 |
| CN103608966B (zh) | 2017-02-15 |
| US20120318664A1 (en) | 2012-12-20 |
| US9593405B2 (en) | 2017-03-14 |
| JP6076969B2 (ja) | 2017-02-08 |
| KR20140044860A (ko) | 2014-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101942961B1 (ko) | 핀홀 없는 유전체 박막 제조 | |
| JP2017503323A (ja) | リチウム金属上の固体電解質およびバリアならびにその方法 | |
| KR101726740B1 (ko) | 고 이온 전도율을 갖는 무-핀홀 솔리드 스테이트 전해질 | |
| US20150079481A1 (en) | Solid state electrolyte and barrier on lithium metal and its methods | |
| KR101010716B1 (ko) | 비전도성 타겟을 사용하는 스퍼터링에 의한 세라믹 박막의증착 방법 및 그를 위한 장치 | |
| US20170301928A1 (en) | Device and method for maskless thin film etching | |
| CN103814431B (zh) | 用于介电材料的沉积速率提高和生长动力学增强的多频溅射 | |
| US9356320B2 (en) | Lithium battery having low leakage anode | |
| KR20170048557A (ko) | 레이저 패터닝된 박막 배터리 | |
| KR20170044730A (ko) | 삼차원 박막 배터리 | |
| JP2009179867A (ja) | 平行平板型マグネトロンスパッタ装置、固体電解質薄膜の製造方法、及び薄膜固体リチウムイオン2次電池の製造方法 | |
| CN104508175A (zh) | 以低温退火进行的电化学装置制造工艺 | |
| KR20150032312A (ko) | 전기화학 디바이스들의 마이크로파 급속 열 프로세싱 | |
| US20170237124A1 (en) | Three-dimensional thin film battery | |
| KR20170044736A (ko) | Lipon 이온 전도율 및 tfb 제작 수율을 증가시키기 위한 특수한 lipon 마스크 | |
| JP2012153983A (ja) | 固体電解質薄膜の製造方法、及び薄膜固体リチウムイオン2次電池の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20220123 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20220123 |