CN106947948A - 无针孔介电薄膜制造 - Google Patents
无针孔介电薄膜制造 Download PDFInfo
- Publication number
- CN106947948A CN106947948A CN201611217409.4A CN201611217409A CN106947948A CN 106947948 A CN106947948 A CN 106947948A CN 201611217409 A CN201611217409 A CN 201611217409A CN 106947948 A CN106947948 A CN 106947948A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- equipment
- deposition
- deposited
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000008021 deposition Effects 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000006698 induction Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 66
- 238000000034 method Methods 0.000 abstract description 48
- 230000001939 inductive effect Effects 0.000 abstract description 13
- 238000010849 ion bombardment Methods 0.000 abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 54
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 31
- 229910052757 nitrogen Inorganic materials 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000010409 thin film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 11
- 229910001386 lithium phosphate Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000009832 plasma treatment Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000010348 incorporation Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000005429 filling process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000008570 general process Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 206010059875 Device ineffective Diseases 0.000 description 1
- 229910032387 LiCoO2 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000010411 postconditioning Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/586—Nitriding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
- Primary Cells (AREA)
- Secondary Cells (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161498480P | 2011-06-17 | 2011-06-17 | |
| US61/498,480 | 2011-06-17 | ||
| CN201280029540.1A CN103608966B (zh) | 2011-06-17 | 2012-06-14 | 无针孔介电薄膜制造 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280029540.1A Division CN103608966B (zh) | 2011-06-17 | 2012-06-14 | 无针孔介电薄膜制造 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106947948A true CN106947948A (zh) | 2017-07-14 |
Family
ID=47352811
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611217409.4A Pending CN106947948A (zh) | 2011-06-17 | 2012-06-14 | 无针孔介电薄膜制造 |
| CN201280029540.1A Expired - Fee Related CN103608966B (zh) | 2011-06-17 | 2012-06-14 | 无针孔介电薄膜制造 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280029540.1A Expired - Fee Related CN103608966B (zh) | 2011-06-17 | 2012-06-14 | 无针孔介电薄膜制造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9593405B2 (enExample) |
| JP (1) | JP6076969B2 (enExample) |
| KR (1) | KR101942961B1 (enExample) |
| CN (2) | CN106947948A (enExample) |
| WO (1) | WO2012174260A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9007674B2 (en) | 2011-09-30 | 2015-04-14 | View, Inc. | Defect-mitigation layers in electrochromic devices |
| US11599003B2 (en) | 2011-09-30 | 2023-03-07 | View, Inc. | Fabrication of electrochromic devices |
| US20170038658A1 (en) | 2011-09-30 | 2017-02-09 | View, Inc. | Particle removal during fabrication of electrochromic devices |
| JP6250540B2 (ja) | 2011-08-08 | 2017-12-20 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | レーザパターニングのための一体化された光および熱遮蔽層を有する薄膜構造およびデバイス |
| US12061402B2 (en) | 2011-12-12 | 2024-08-13 | View, Inc. | Narrow pre-deposition laser deletion |
| US11865632B2 (en) | 2011-12-12 | 2024-01-09 | View, Inc. | Thin-film devices and fabrication |
| US12403676B2 (en) | 2011-12-12 | 2025-09-02 | View Operating Corporation | Thin-film devices and fabrication |
| US10802371B2 (en) | 2011-12-12 | 2020-10-13 | View, Inc. | Thin-film devices and fabrication |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
| JP6194958B2 (ja) * | 2013-08-26 | 2017-09-13 | 富士通株式会社 | 全固体型二次電池、その製造方法及び電子機器 |
| WO2015102836A1 (en) | 2014-01-02 | 2015-07-09 | Applied Materials, Inc. | Solid state electrolyte and barrier on lithium metal and its methods |
| US9746678B2 (en) * | 2014-04-11 | 2017-08-29 | Applied Materials | Light wave separation lattices and methods of forming light wave separation lattices |
| JP2018500721A (ja) * | 2014-10-31 | 2018-01-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 電気化学デバイス層の堆積とレーザ処理の統合 |
| US12235560B2 (en) | 2014-11-25 | 2025-02-25 | View, Inc. | Faster switching electrochromic devices |
| CA2980477A1 (en) | 2015-03-20 | 2016-09-29 | View, Inc. | Faster switching low-defect electrochromic windows |
| US20170301926A1 (en) | 2016-04-14 | 2017-10-19 | Applied Materials, Inc. | System and method for maskless thin film battery fabrication |
| EP3500891A4 (en) | 2016-08-22 | 2020-03-25 | View, Inc. | ELECTROCHROMIC WINDOWS WITH ELECTROMAGNETIC SHIELDING |
| FR3062962B1 (fr) * | 2017-02-16 | 2019-03-29 | Stmicroelectronics (Tours) Sas | Procede de fabrication d'une batterie au lithium |
| CN109763101A (zh) * | 2019-01-30 | 2019-05-17 | 南京大学 | 一种制备超薄无针孔介电薄膜的方法 |
| CN114525471B (zh) * | 2022-02-18 | 2024-03-19 | 辽宁师范大学 | 质子交换膜燃料电池不锈钢双极板高质量Cr基涂层制备方法 |
| CN116504987A (zh) * | 2022-12-23 | 2023-07-28 | 安迈特科技(北京)有限公司 | 复合集流体及其制备方法和应用以及锂离子电池 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0236549A (ja) * | 1988-07-27 | 1990-02-06 | Ricoh Co Ltd | 薄膜デバイス |
| CN1231510A (zh) * | 1997-10-27 | 1999-10-13 | 世界先进积体电路股份有限公司 | 去除氮化硅保护层针孔的方法 |
| US20050186469A1 (en) * | 2001-12-21 | 2005-08-25 | Polyplus Battery Company | Chemical protection of a lithium surface |
| US20100285237A1 (en) * | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798521B2 (ja) | 1986-08-20 | 1995-10-25 | 澁谷工業株式会社 | 回転式重量充填装置 |
| JPS63291874A (ja) * | 1987-05-26 | 1988-11-29 | Shinagawa Refract Co Ltd | イットリア質耐火成形体 |
| JPH01319678A (ja) * | 1988-06-21 | 1989-12-25 | Agency Of Ind Science & Technol | プラズマ処理による膜改質方法 |
| JPH0747820B2 (ja) | 1989-09-22 | 1995-05-24 | 株式会社日立製作所 | 成膜装置 |
| JPH0429319A (ja) * | 1990-05-24 | 1992-01-31 | Kanegafuchi Chem Ind Co Ltd | 半導体素子及びその製造方法 |
| US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| JP2000113428A (ja) * | 1998-10-08 | 2000-04-21 | Tdk Corp | 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法 |
| US6863399B1 (en) * | 2000-01-04 | 2005-03-08 | David A. Newsome | Flash recovery timer and warning device, with recorder |
| KR100341407B1 (ko) * | 2000-05-01 | 2002-06-22 | 윤덕용 | 플라즈마 처리에 의한 리튬전이금속 산화물 박막의 결정화방법 |
| US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| US7247221B2 (en) | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
| US6835493B2 (en) | 2002-07-26 | 2004-12-28 | Excellatron Solid State, Llc | Thin film battery |
| KR100467436B1 (ko) | 2002-10-18 | 2005-01-24 | 삼성에스디아이 주식회사 | 리튬-황 전지용 음극, 그의 제조 방법 및 그를 포함하는리튬-황 전지 |
| US7476602B2 (en) * | 2005-01-31 | 2009-01-13 | Texas Instruments Incorporated | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films |
| JP2007273249A (ja) * | 2006-03-31 | 2007-10-18 | Arisawa Mfg Co Ltd | リチウムイオン二次電池の製造方法 |
| TW200919803A (en) * | 2007-06-07 | 2009-05-01 | Koninkl Philips Electronics Nv | Solid-state battery and method for manufacturing of such a solid-state battery |
| CN101267057A (zh) * | 2008-05-08 | 2008-09-17 | 复旦大学 | 高比能可充式全固态锂空气电池 |
| US8568571B2 (en) * | 2008-05-21 | 2013-10-29 | Applied Materials, Inc. | Thin film batteries and methods for manufacturing same |
| JP2010251113A (ja) * | 2009-04-15 | 2010-11-04 | Sony Corp | 固体電解質電池の製造方法および固体電解質電池 |
| JP5515665B2 (ja) * | 2009-11-18 | 2014-06-11 | ソニー株式会社 | 固体電解質電池、正極活物質および電池 |
| JP6215307B2 (ja) | 2012-04-18 | 2017-10-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高いイオン伝導率を有するピンホールの無い固体の状態の電解質 |
-
2012
- 2012-06-14 JP JP2014515996A patent/JP6076969B2/ja not_active Expired - Fee Related
- 2012-06-14 US US13/523,790 patent/US9593405B2/en not_active Expired - Fee Related
- 2012-06-14 CN CN201611217409.4A patent/CN106947948A/zh active Pending
- 2012-06-14 WO PCT/US2012/042487 patent/WO2012174260A2/en not_active Ceased
- 2012-06-14 CN CN201280029540.1A patent/CN103608966B/zh not_active Expired - Fee Related
- 2012-06-14 KR KR1020147001252A patent/KR101942961B1/ko not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0236549A (ja) * | 1988-07-27 | 1990-02-06 | Ricoh Co Ltd | 薄膜デバイス |
| CN1231510A (zh) * | 1997-10-27 | 1999-10-13 | 世界先进积体电路股份有限公司 | 去除氮化硅保护层针孔的方法 |
| US20100285237A1 (en) * | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
| US20050186469A1 (en) * | 2001-12-21 | 2005-08-25 | Polyplus Battery Company | Chemical protection of a lithium surface |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014524974A (ja) | 2014-09-25 |
| CN103608966A (zh) | 2014-02-26 |
| WO2012174260A2 (en) | 2012-12-20 |
| WO2012174260A3 (en) | 2013-04-25 |
| CN103608966B (zh) | 2017-02-15 |
| US20120318664A1 (en) | 2012-12-20 |
| US9593405B2 (en) | 2017-03-14 |
| JP6076969B2 (ja) | 2017-02-08 |
| KR101942961B1 (ko) | 2019-01-28 |
| KR20140044860A (ko) | 2014-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103608966B (zh) | 无针孔介电薄膜制造 | |
| CN104272519B (zh) | 具有高离子导电性的无针孔固态电解质 | |
| JP2017503323A (ja) | リチウム金属上の固体電解質およびバリアならびにその方法 | |
| KR101010716B1 (ko) | 비전도성 타겟을 사용하는 스퍼터링에 의한 세라믹 박막의증착 방법 및 그를 위한 장치 | |
| JP5129530B2 (ja) | ＬｉＣｏＯ２の堆積 | |
| US20150079481A1 (en) | Solid state electrolyte and barrier on lithium metal and its methods | |
| US9356320B2 (en) | Lithium battery having low leakage anode | |
| CN103814431B (zh) | 用于介电材料的沉积速率提高和生长动力学增强的多频溅射 | |
| JP2009179867A (ja) | 平行平板型マグネトロンスパッタ装置、固体電解質薄膜の製造方法、及び薄膜固体リチウムイオン２次電池の製造方法 | |
| US20120161322A1 (en) | Electronic component manufacturing method including step of embedding metal film | |
| CN104282567A (zh) | 制造igzo层和tft的方法 | |
| TWI509094B (zh) | 包括嵌入金屬膜的步驟之電子元件製造方法 | |
| US9748569B2 (en) | Porous, thin film electrodes for lithium-ion batteries | |
| CN106575797A (zh) | 用于增加LiPON离子电导率以及TFB制造产率的专用LiPON掩模 | |
| KR20150079749A (ko) | 래미네이트 재료, 방법 및 그 제조 장치, 및 그의 용도 | |
| JP2004165069A (ja) | リチウム二次電池用電極の形成装置 | |
| JP2012243507A (ja) | プラズマ処理装置および薄膜太陽電池の製造方法 | |
| WO2020262322A1 (ja) | 酸化物半導体の加工方法及び薄膜トランジスタの製造方法 | |
| JP2009114510A (ja) | スパッタリング方法 | |
| JP2012153983A (ja) | 固体電解質薄膜の製造方法、及び薄膜固体リチウムイオン２次電池の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170714 |
|
| WD01 | Invention patent application deemed withdrawn after publication |