CN102400093B - 壳体及其制造方法 - Google Patents

壳体及其制造方法 Download PDF

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CN102400093B
CN102400093B CN201010282318.5A CN201010282318A CN102400093B CN 102400093 B CN102400093 B CN 102400093B CN 201010282318 A CN201010282318 A CN 201010282318A CN 102400093 B CN102400093 B CN 102400093B
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张新倍
陈文荣
蒋焕梧
陈正士
张满喜
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Beijing Zhongcai Wyse Education Technology Co ltd
Nantong Shun Saint Construction Engineering Co ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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    • GPHYSICS
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    • G06F1/18Packaging or power distribution
    • G06F1/181Enclosures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576Boride, carbide or nitride component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611Oxide-containing component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708Sn-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12729Group IIA metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826Group VIB metal-base component
    • Y10T428/12847Cr-base component

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Abstract

一种壳体,该壳体包括镁或镁合金基体、包括依次形成于该镁或镁合金基体上的镁锡合金层、锡层、铬层、铬锡合金层及CrNO层。所述壳体具有较好的耐腐蚀性及耐磨性。本发明还提供了上述壳体的制造方法。

Description

壳体及其制造方法
技术领域
本发明涉及一种壳体及其制造方法,特别涉及一种镁或镁合金壳体及其制造方法。
背景技术
镁及镁合金由于质量轻、散热性佳、电磁屏蔽性好等优点,广泛应用于3C产品的壳体、汽车及航空等领域。但镁及镁合金最明显的缺点是耐腐蚀差,暴露于自然环境中会引起表面快速腐蚀。
提高镁及镁合金壳体耐腐蚀性的方法通常是在其表面形成保护性的涂层。传统的阳极氧化、铬酸盐转化膜技术及电镀等在镁及镁合金表面形成保护性涂层的方法存在生产工艺复杂、效率低、环境污染严重等缺点。而真空镀膜(PVD)技术虽是一种非常环保的镀膜工艺,且可镀制的膜层种类丰富、耐磨性能优异,但PVD工艺沉积的膜层往往是以柱状晶形态生长,因此膜层存在大量的晶间间隙,导致膜层致密性不够而对铝合金的耐腐蚀性能的提高有限。
发明内容
鉴于此,提供一种具有较好的耐腐蚀性的镁或镁合金的壳体。
另外,还提供一种上述壳体的制造方法。
一种壳体,该壳体包括镁或镁合金基体、依次形成于该镁或镁合金基体上的镁锡合金层、锡层、铬锡合金层、铬层及CrNO层。
一种壳体的制造方法,其包括如下步骤:
提供镁或镁合金基体;
以锡靶为靶材,于所述镁或镁合金基体表面磁控溅射锡层,溅射温度为50~150℃,溅射时间为30~60min;在该锡层的溅射过程中,该锡层与镁或镁合金基体界面处的金属锡向镁或镁合金基体扩散,于镁或镁合金基体与锡层之间形成镁锡合金层;
以铬靶为靶材,于所述锡层上磁控铬层,溅射温度为50~150℃;在该铬层的溅射过程中,所述锡层与铬层界面处的金属锡向铬层扩散,于锡层与铬层之间形成铬锡合金层;
以铬靶为靶材,氮气和氧气为反应气体,于该铬层上磁控溅射CrNO层。
所述镁锡合金层及铬锡合金层的形成,可提高壳体的电化学电位,使壳体不易发生电化学腐蚀。在所述CrNO层的形成过程中,Cr不仅能与N、O形成Cr(N,O)固溶相,还能分别与N、O形成CrN相、Cr2O3相。CrN相、Cr2O3相及Cr(N,O)固溶相多相混合物同时生长,能互相抑制柱状晶体的生长,从而显著提高所述CrNO层的致密性。所述CrNO层致密性的提高,进一步增强了所述壳体的耐腐蚀性。
所述锡层及铬层的形成可有效增强所述壳体的各膜层之间的结合力,且CrNO层中的CrN相、Cr2O3相及Cr(N,O)固溶相之间具有较好的相容性及结合力,使经上述制造方法制得的壳体具有较好的耐磨性。
附图说明
图1是本发明较佳实施方式壳体的剖视示意图。
主要元件符号说明
壳体            10
镁或镁合金基体  11
镁锡合金层      12
锡层            13
铬锡合金层      14
铬层            15
CrNO层          17
具体实施方式
请参阅图1,本发明一较佳实施例的壳体10包括镁或镁合金基体11、依次形成于该镁或镁合金基体11表面的镁锡合金层12、锡层13、铬锡合金层14、铬层15及氮氧化铬(CrNO)层17。
所述锡层13、铬层15及CrNO层17均通过磁控溅射镀膜法形成。所述锡层13及铬层15的形成用以提高所述壳体10的各膜层之间的结合力。所述铬层15的厚度为0.2~0.5μm。所述CrNO层17的厚度为0.2~2.0μm。
所述镁锡合金层12是在所述锡层13的形成过程中,锡层13与镁或镁合金基体11界面处的金属锡向镁或镁合金基体11中扩散而形成。
所述铬锡合金层14是在所述锡层13的形成过程中,锡层13与铬层15界面处的金属锡向铬层15中扩散而形成。
所述壳体10的制造方法主要包括如下步骤:
提供镁或镁合金基体11,该镁或镁合金基体11可以通过冲压成型得到,其具有待制得的壳体10的结构。
将所述镁或镁合金基体11放入盛装有乙醇及/或丙酮溶液的超声波清洗器中进行震动清洗,以除去镁或镁合金基体11表面的杂质和油污。清洗完毕后烘干备用。
再对镁或镁合金基体11的表面进行氩气等离子清洗,进一步去除镁或镁合金基体11表面的油污,以改善镁或镁合金基体11表面与后续涂层的结合力。对镁或镁合金基体11的表面进行氩气等离子清洗的方法包括如下步骤:将镁或镁合金基体11放入真空镀膜机(图未示)的真空室内的工件架上,抽真空该真空室至真空度为8.0×10-3Pa,以300~600sccm(标准状态毫升/分钟)的流量向真空室内通入纯度为99.999%的氩气(工作气体),于镁或镁合金基体11上施加-300~-800V的偏压,对镁或镁合金基体11表面进行等离子清洗,清洗时间为3~10min。
完成所述等离子清洗后,调节氩气流量至100~300sccm,设置占空比为30~70%,设置所述工件架的公转速度为0.5~3.0r/min(revolution per minute,转/分钟),加热所述真空室至50~150℃(即溅射温度为50~150℃);开启已置于所述真空镀膜机中的锡靶的电源,并设定其功率为5~10kw,于镁或镁合金基体11上施加-50~-300V的偏压,沉积所述锡层13。沉积该锡层13的时间为20~60min。
由于金属锡具有低温快速扩散的特点,在形成所述锡层13的过程中,锡层13与镁或镁合金基体11界面处的金属锡向镁或镁合金基体11扩散,并在所述界面处形成所述镁锡合金层12。
完成所述锡层13的沉积后,关闭所述锡靶的电源,开启铬靶的电源,设置其功率为5~10kw,保持所述真空室为50~150℃(即溅射温度为50~150℃),沉积所述铬层15,沉积该铬层15的时间为20~60min。
同理,由于金属锡的低温快速扩散性,在形成所述铬层15的过程中,锡层13与铬层15界面处的金属锡也会向铬层15扩散,并在所述界面处形成所述铬锡合金层14。
于该铬层15上形成CrNO层17。制备该CrNO层17时,向真空室中通入流量为10~120sccm的反应气体氮气及流量为10~60sccm的反应气体氧气,沉积CrNO层17。沉积该CrNO层17的时间为30~90min。
所述镁锡合金层12及铬锡合金层14的形成,可提高壳体10的电化学电位,使壳体10不易发生电化学腐蚀。在所述CrNO层17的形成过程中,Cr不仅能与N、O形成Cr(N,O)固溶相,还能分别与N、O形成CrN相、Cr2O3相。CrN相、Cr2O3相及Cr(N,O)固溶相多相混合物同时生长,能互相抑制柱状晶体的生长,从而显著提高所述CrNO层17的致密性。所述CrNO层17致密性的提高,进一步增强了所述壳体10的耐腐蚀性。
所述锡层13及铬层15的形成可有效增强所述壳体10的各膜层之间的结合力,且CrNO层17中的CrN相、Cr2O3相及Cr(N,O)固溶相之间具有较好的相容性及结合力,使经上述制造方法制得的壳体10具有较好的耐磨性。

Claims (9)

1.一种壳体,该壳体包括镁或镁合金基体,其特征在于:该壳体还包括依次形成于该镁或镁合金基体上的镁锡合金层、锡层、铬锡合金层、铬层及CrNO层。
2.如权利要求1所述的壳体,其特征在于:所述锡层、铬层及CrNO层均通过磁控溅射镀膜法形成。
3.如权利要求2所述的壳体,其特征在于:所述镁锡合金层由锡层与镁或镁合金基体界面处的金属锡向镁或镁合金基体扩散而形成,所述铬锡合金层由锡层与铬层界面处的金属锡向铬层扩散而形成。
4.如权利要求1所述的壳体,其特征在于:所述铬层的厚度为0.2~0.5μm,所述CrNO层的厚度为0.2~2.0μm。
5.一种壳体的制造方法,其包括如下步骤:
提供镁或镁合金基体;
以锡靶为靶材,于所述镁或镁合金基体表面磁控溅射锡层,溅射温度为50~150℃,溅射时间为30~60min;在该锡层的溅射过程中,该锡层与镁或镁合金基体界面处的金属锡向镁或镁合金基体扩散,于镁或镁合金基体与锡层之间形成镁锡合金层;
以铬靶为靶材,于所述锡层上磁控溅射铬层,溅射温度为50~150℃;在该铬层的溅射过程中,所述锡层与铬层界面处的金属锡向铬层扩散,于锡层与铬层之间形成铬锡合金层;
以铬靶为靶材,氮气和氧气为反应气体,于该铬层上磁控溅射CrNO层。
6.如权利要求5所述的壳体的制造方法,其特征在于:溅射所述锡层的工艺参数为:锡靶的电源功率为5~10kw,于镁或镁合金基体上施加-50~-300V的偏压,以氩气为工作气体,氩气的流量为100~300sccm。
7.如权利要求5所述的壳体的制造方法,其特征在于:溅射所述铬层的工艺参数为:以铬靶为靶材,其电源功率为5~10kw,溅射时间为20~60min。
8.如权利要求5所述的壳体的制造方法,其特征在于:溅射所述CrNO层的工艺参数为:氮气的流量为10~120sccm,氧气的流量为10~60sccm,溅射时间为30~90min。
9.如权利要求5所述的壳体的制造方法,其特征在于:所述壳体的制造方法还包括在进行磁控溅射所述锡层前对所述镁或镁合金基体进行超声波清洗及等离子清洗的步骤。
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Oxidation of TiN, ZrN, TiZrN, CrN, TiCrN and TiN/CrN multilayer hard coatings reactively sputtered at low temperature;P. Panjan, et. al.;《Thin Solid Films》;19961231;第281-282卷;第298-301页 *

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