CN102383129A - 壳体及其制造方法 - Google Patents

壳体及其制造方法 Download PDF

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CN102383129A
CN102383129A CN2010102718193A CN201010271819A CN102383129A CN 102383129 A CN102383129 A CN 102383129A CN 2010102718193 A CN2010102718193 A CN 2010102718193A CN 201010271819 A CN201010271819 A CN 201010271819A CN 102383129 A CN102383129 A CN 102383129A
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magnesium
housing
alloy substrate
magnesium alloy
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张新倍
陈文荣
蒋焕梧
陈正士
张满喜
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to US12/981,718 priority patent/US20120055691A1/en
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer

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Abstract

一种壳体，该壳体包括镁或镁合金基体、依次形成于该镁或镁合金基体上的铝层及氧离子注入膜，所述氧离子注入膜中主要含有过饱和相的三氧化二铝。该铝层与氧离子注入膜组成的复合膜层提高了所述壳体的耐腐蚀性。本发明还提供了上述壳体的制造方法。

Description

壳体及其制造方法
技术领域
本发明涉及一种壳体及其制造方法，特别涉及一种镁或镁合金壳体及其制造方法。
背景技术
镁或镁合金由于质量轻、散热性佳、电磁屏蔽性好等优点，广泛应用于3C产品的壳体、汽车及航空等领域。但镁或镁合金最明显的缺点是耐腐蚀差，暴露于自然环境中会引起表面快速腐蚀。
提高镁或镁合金壳体耐腐蚀性的方法通常是在其表面形成保护性的涂层。传统的阳极氧化、铬酸盐转化膜技术及电镀等在镁或镁合金表面形成保护性涂层的方法存在生产工艺复杂、效率低、环境污染严重等缺点。
磁控溅射技术近年来被广泛应用于在镁或镁合金壳体表面形成保护性涂层。然而，由于磁控溅射技术本身的特点，以该方法形成的保护性涂层无法完全填充镁或镁合金壳体表面的裂纹、孔洞等，因而对镁或镁合金壳体耐腐蚀性能的提高有限。
发明内容
鉴于此，提供一种具有较好的耐腐蚀性的镁或镁合金的壳体。
另外，还提供一种上述壳体的制造方法。
一种壳体，包括镁或镁合金基体、依次形成于该镁或镁合金基体上的铝层及氧离子注入膜，所述氧离子注入膜中主要含有过饱和相的三氧化二铝。
一种壳体的制造方法，其包括如下步骤：
提供镁或镁合金基体；
于该镁或镁合金基体的表面磁控溅射铝层；
于该铝层上注入氧离子，形成主要含有过饱和相三氧化二铝的氧离子注入膜。
本发明壳体的制造方法在镁或镁合金基体上磁控溅射形成铝层，再于该铝层上形成氧离子注入膜。该铝层与氧离子注入膜组成的复合膜层显著地提高了所述壳体的耐腐蚀性，且该制造工艺简单、几乎无环境污染。
附图说明
图1是本发明较佳实施方式壳体的剖视示意图。
主要元件符号说明
壳体                10
镁或镁合金基体      11
锡层                13
铝层                15
氧离子注入膜        17
具体实施方式
请参阅图1，本发明一较佳实施例的壳体10包括一镁或镁合金基体11、依次形成于该镁或镁合金基体11表面的一铝层15及一氧离子注入膜17。所述铝层15的厚度为0.5～1.0μm。
该壳体10还包括形成于该镁或镁合金基体11与铝层15之间的一锡层13。所述锡层13的厚度为200～600nm。
所述氧离子注入膜17主要含有过饱和相三氧化二铝(Al2O3)。
所述壳体10的制造方法主要包括如下步骤：
提供一镁或镁合金基体11，该镁或镁合金基体11可以通过冲压成型得到，其具有待制得的壳体10的结构。
将所述镁或镁合金基体11放入盛装有乙醇及/或丙酮溶液的超声波清洗器中进行震动清洗，以除去镁或镁合金基体11表面的杂质和油污。清洗完毕后烘干备用。
再对镁或镁合金基体11的表面进行氩气等离子清洗，进一步去除镁或镁合金基体11表面的油污，以改善镁或镁合金基体11表面与后续涂层的结合力。对镁或镁合金基体11的表面进行氩气等离子清洗的方法包括如下步骤：将镁或镁合金基体11放入一真空镀膜机(图未示)的真空室内的工件架上，抽真空该真空室至真空度为8.0×10-3Pa，以300～600sccm(标准状态毫升/分钟)的流量向真空室内通入纯度为99.999％的氩气(工作气体)，于镁或镁合金基体11上施加-300～-800V的偏压，对镁或镁合金基体11表面进行等离子清洗，清洗时间为3～10min。所述真空镀膜机除可用以进行等离子清洗外，还可用以多弧离子镀膜处理、磁控溅射镀膜处理以及离子注入处理。
采用磁控溅射的方式在镁或镁合金基体11表面依次形成一锡层13及一铝层15。形成该锡层13及铝层15的具体操作方法及工艺参数为：在所述等离子清洗完成后，调节氩气流量至100～300sccm，加热所述真空室至50～180℃(即溅射温度为50～180℃)；开启已置于所述真空镀膜机中的一锡靶的电源，并设定其功率为5～10kw，于镁或镁合金基体11上施加-50～-300V的偏压，沉积锡层13。沉积该锡层13的时间为30～60min。形成所述锡层13后，关闭所述锡靶的电源，开启一铝靶的电源，设置其功率为5～10kw，沉积所述铝层15，沉积该铝层15的时间为30～90min。
由于金属锡具有低温快扩散性的特点，所述锡层13的形成可增强所述铝层15与镁或镁合金基体11的结合力，同时可降低镁或镁合金基体11表面的孔隙缺陷，从而提高所述镁或镁合金基体11的耐腐蚀性。
完成所述铝层15的沉积后，于该铝层15表面注入氧离子，形成一氧离子注入膜17。
所述的注入氧离子的过程是：将镀覆有所述锡层13及铝层15的镁或镁合金基体11置于所述真空镀膜机的真空室中，该镀膜机的离子源将氧气进行电离，并经高压电场加速成具有几万甚至几百万电子伏特能量的氧离子束，射入铝层15的表面，与铝层15表层中及其表面的原子或分子发生一系列的物理、化学反应，最终于该铝层15的表面沉积形成一主要含有过饱和相Al2O3的氧离子注入膜17。由于金属铝的氧化体积比系数大于1，形成的过饱和相Al2O3使氧离子注入膜17具有较好的致密性，从而进一步提高所述镁或镁合金基体11的耐腐蚀性。
本实施例中注入所述氧离子的参数为：真空度为3.0×10-8Pa，氧气纯度为99.99％，离子源功率为0.5～5kw，工作气压为0.8～8.0Pa，注入时间为30～120min。
本发明较佳实施方式的壳体10的制造方法，在镁或镁合金基体11上依次形成一锡层13及一铝层15，再于该铝层15上形成一氧离子注入膜17。该锡层13、铝层15及氧离子注入膜17组成的复合膜层显著地提高了所述壳体的耐腐蚀性，且该制造工艺简单、几乎无环境污染。

Claims (10)

1.一种壳体，包括镁或镁合金基体，其特征在于：该壳体还包括依次形成于该镁或镁合金基体上的铝层及氧离子注入膜，所述氧离子注入膜中主要含有过饱和相的三氧化二铝。
2.如权利要求1所述的壳体，其特征在于：所述铝层的厚度为0.5～1.0μm。
3.如权利要求1所述的壳体，其特征在于：所述壳体还包括通过磁控溅射镀膜法形成于所述镁或镁合金基体与所述铝层之间的锡层。
4.如权利要求3所述的壳体，其特征在于：所述锡层的厚度为200～600nm。
5.一种壳体的制造方法，其包括如下步骤：
提供镁或镁合金基体；
于该镁或镁合金基体的表面磁控溅射铝层；
于该铝层上注入氧离子，形成主要含有过饱和相三氧化二铝的氧离子注入膜。
6.如权利要求5所述的壳体的制造方法，其特征在于：沉积所述铝层时以铝靶为靶材，设置该铝靶的电源功率为5～10kw，沉积时间为30～90min。
7.如权利要求5所述的壳体的制造方法，其特征在于：形成所述氧离子注入膜的工艺参数为：真空度为3.0×10-8Pa，离子源功率为0.5～5kw，工作气压为0.8～8.0Pa，注入时间为30～120min。
8.如权利要求5所述的壳体的制造方法，其特征在于：所述壳体的制造方法还包括于所述镁或镁合金基体与所述铝层之间沉积锡层的步骤。
9.如权利要求8所述的壳体的制造方法，其特征在于：沉积所述锡层时以锡靶为靶材，设置该锡靶的电源功率为5～10kw，于镁或镁合金基体上施加-50～-300V的偏压，以氩气为工作气体，其流量为100～300sccm，溅射温度为50～180℃，沉积时间为30～60min。
10.如权利要求5所述的壳体的制造方法，其特征在于：所述壳体的制造方法还包括在进行磁控溅射前对所述镁或镁合金基体进行超声波清洗及等离子体清洗的步骤。
CN2010102718193A 2010-09-03 2010-09-03 壳体及其制造方法 Pending CN102383129A (zh)

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