JP2009065181A5

JP2009065181A5 -

Info

Publication number: JP2009065181A5
Application number: JP2008260231A
Authority: JP
Filing date: 2008-10-07
Publication date: 2011-03-31
Anticipated expiration: 2027-02-15

Description

本発明の磁気抵抗効果素子の製造方法は、第一強磁性層と、前記第一強磁性層の上に位置するＭｇＯ層と、前記ＭｇＯ層の上に位置する第二強磁性層と、を有する多層積層膜からなる磁気抵抗効果素子の製造方法であって、酸化性ガスに対するゲッタ効果がＭｇＯより大きい物質を含有するターゲットをスパッタリングして、該物質を成膜室の構成部材に被着する第一工程と、前記第一工程後に、前記成膜室において、基板とＭｇＯターゲットの間に設けられたシャッタを閉状態にしながら、前記ＭｇＯターゲットに高周波電力を印加してスパッタリングするプリスパッタ工程と、前記プリスパッタ工程後、前記成膜室において、前記シャッタを開状態にして、前記ＭｇＯターゲットに高周波電力を印加してスパッタリング法により基板に前記ＭｇＯ層を形成する第二工程と、を有することを特徴とする。また、本発明に係る前記成膜室は、１０ ^−７Ｐａ以下に排気されていることを特徴とする。また、本発明に係る前記第一工程は、前記シャッタを閉状態にしながら、行われることを特徴とする。また、本発明に係る前記第一工程は、ダミー基板を基板保持部に載置しながら、行われることを特徴とする。また、本発明に係る前記第一工程は、前記プリスパッタ工程の直前に行なわれることを特徴とする。 A method for manufacturing a magnetoresistive element of the present invention includes a first ferromagnetic layer, an MgO layer positioned on the first ferromagnetic layer, and a second ferromagnetic layer positioned on the MgO layer. A method of manufacturing a magnetoresistive effect element comprising a multi-layered film comprising sputtering a target containing a substance having a getter effect on an oxidizing gas greater than MgO, and depositing the substance on a constituent member of a film forming chamber A pre-sputtering step of applying a high-frequency power to the MgO target and performing sputtering while the shutter provided between the substrate and the MgO target is closed in the film formation chamber after the first step; After the pre-sputtering step, in the film formation chamber, the shutter is opened, high frequency power is applied to the MgO target, and the substrate is formed by sputtering. And having a second step of forming an MgO layer. The film formation chamber according to the present invention is evacuated to 10 ⁻⁷ Pa or less. In addition, the first step according to the present invention is performed while the shutter is in a closed state. In addition, the first step according to the present invention is performed while placing the dummy substrate on the substrate holding portion. Further, the first step according to the present invention is performed immediately before the pre-sputtering step .

Claims

Production of a magnetoresistive effect element comprising a multilayer laminated film having a first ferromagnetic layer, an MgO layer located on the first ferromagnetic layer, and a second ferromagnetic layer located on the MgO layer A method,
A first step of sputtering a target containing a substance having a getter effect with respect to an oxidizing gas greater than MgO, and depositing the substance on a constituent member of the film forming chamber;
A pre-sputtering step of applying high-frequency power to the MgO target and performing sputtering while the shutter provided between the substrate and the MgO target is closed in the film formation chamber after the first step;
After the pre-sputtering step, the film forming chamber includes a second step of opening the shutter and applying high frequency power to the MgO target to form the MgO layer on the substrate by a sputtering method. A method of manufacturing a magnetoresistive element characterized by the above.

The film forming chamber has 10 ^−７-7 2. The method of manufacturing a magnetoresistive element according to claim 1, wherein the magnetoresistive element is exhausted to Pa or less.

The method of manufacturing a magnetoresistive effect element according to claim 1, wherein the first step is performed while the shutter is in a closed state.

The method of manufacturing a magnetoresistive effect element according to claim 1, wherein the first step is performed while placing the dummy substrate on the substrate holding portion.

The method of manufacturing a magnetoresistive effect element according to claim 1, wherein the first step is performed immediately before the pre-sputtering step.