JPH0949075A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of abnormal discharge in the connecting part of substrate mounting jigs and a holder body and to prevent the intrusion of foreign matter into wafers by forming these substrate mounting jigs of insulating materials at the time of sputtering of insulating films or protective films in a wafer process stage of magnetic head elements. SOLUTION: The wafers W are held on a rotary holder body 20 disposed in a vacuum chamber and the plural substrate mounting jigs 10 to be mounted are made of the insulating materials, preferably by using quartz glass. As a result, the occurrence of the abnormal discharge during the sputtering in the connecting parts 22 between the substrate mounting jigs 10 and the holder body 20 is prevented and the peeling occurring in the discharge of the insulating films and protective films sticking to the connecting parts 22 is prevented, by which the intrusion of these films into the wafers W is prevented. Usually, the substrate mounting jigs 10 consist of wafer holding plates and mounting plates to the holder body 20 and both of which are fixed attachably and detachably by means of screws. These holding plates and mounting plates are composed of the insulating materials.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus used in, for example, a wafer process of a thin film magnetic head.

[0002]

2. Description of the Related Art A thin film magnetic head may be used as a magnetic head of a video tape recorder or a digital audio tape recorder (DAT). In the wafer process step when manufacturing this thin film head,
An insulating film may be formed on the wafer to form an insulating layer between elements, or a protective film may be formed to protect the element. Conventionally, such an insulating layer film and a protective film are formed by a sputtering device. As shown in FIG. 5, a substrate attachment jig 1 for attaching a wafer substrate is detachably attached to the main body 2 of the sputtering apparatus. Place the wafer on the board mounting jig 1,
The board mounting jig 1 is mounted on the main body 2.

[0003]

However, in the conventional sputtering apparatus, the connecting portion 3 between the substrate mounting jig 1 and the main body 2 is used.
An abnormal electric discharge may occur. When the abnormal discharge occurs in this way, the protective film and the insulating layer film formed on the connection portion 3 are peeled off and mixed into the substrate W during the sputtering as foreign matter, so that a high-purity wafer is formed. There is a problem that you cannot do it. In this way, the insulating layer film and the protective film are peeled off at the connecting portion 3 between the board mounting jig 1 and the main body 2 due to the abnormal discharge, because the board mounting jig 1 is made of metal, the abnormal discharge is cured. This is because the tool 1 is damaged. Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to provide a sputtering apparatus in which film peeling does not occur at the connecting portion between the substrate mounting jig and the main body.

[0004]

According to the present invention, there is provided a sputtering apparatus for sputtering a substrate, which holds a substrate made of an insulating material for sputtering. This is achieved by a sputtering apparatus including a substrate mounting jig and a main body on which a plurality of substrate mounting jigs are mounted. In the present invention, the substrate mounting jig is made of an insulating material and holds the substrate for performing sputtering. The main body is equipped with a plurality of board mounting jigs. As a result, since the substrate mounting jig has an insulating property, abnormal discharge is unlikely to occur, film peeling does not occur, and foreign substances do not enter the substrate during sputtering.

[0005]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Note that the embodiments described below are preferred specific examples of the present invention,
Although various technically preferable limitations are given, the scope of the present invention is not limited to these modes unless otherwise specified to limit the present invention.

FIG. 1 shows a preferred embodiment of the sputtering apparatus of the present invention. The sputtering apparatus 100 includes a substance (also referred to as a target) T for forming a film, a main body 20 on which a plurality of substrate mounting jigs 10 are mounted, and the like. The vacuum chamber 16 of the sputtering apparatus 100 accommodates the main body 20, and the inside of the vacuum chamber 16 is pulled by an automatic exhaust device 17 so that a predetermined inert gas (for example, argon) is introduced at an appropriate pressure. It has become. A discharge (applying a DC voltage or a high-frequency voltage) is caused between the substance T to be formed into a film and the main body 20 so that the accelerated inert gas ions form a substance (target) T to be formed. Atoms and molecules are tapped from the surface to form a film of the substance on the substrate W placed on the substrate mounting jig 12.

A plurality of substrate mounting jigs 10 can be mounted on the main body 20 of FIG. 1 as described above, and the substrate mounting jig 10 has a structure as shown in FIG. The board mounting jig 10 includes a holding plate 12 and a mounting plate 14. The holding plate 12 and the mounting plate 14 are detachably fixed with screws 16. The holding plate 12 is, for example, 2
A single wafer W of substrate W can be set at the substrate mounting position P. Holding plate 1 for this board mounting jig 10
2 and the mounting plate 14 are made of an insulating material such as quartz glass. By using the substrate mounting jig 10 as an insulator in this way, film peeling due to abnormal discharge can be prevented.

The body 20 of FIG. 1 is shown enlarged in FIGS. 3 and 4. 3 and 4, the main body 20 has a plurality of mounting portions 22 for mounting the cylindrical rotating body 21 and the board mounting jig 10. Five board mounting jigs 10 can be mounted on the rotating body 21. This rotating body 21
Is a cylindrical type and can be indexed at a predetermined speed by the drive unit 30 of the rotating body in FIG. FIG.
A magnet is preferably placed on the back side of the substance T to be deposited, and the plasma density is increased by utilizing magnetron motion of electrons near the surface of the substance T to be deposited. The film speed can be increased. Therefore, a plate magnetron cathode (not shown) is provided near the substance T to be deposited.

Next, the operation of the above-mentioned sputtering apparatus will be described. First, the holding plate 12 and the mounting plate 14 of FIG.
Are integrated with each other to make a board mounting jig 10. Then, the substrate W for the thin film magnetic head is set at the substrate mounting position P of the holding plate 12 of each substrate mounting jig 10. Substrate W
The board mounting jig 10 in which is set is mounted at a predetermined position of the main body 20 via the connecting portion 22 as shown in FIGS.

Next, the inside of the vacuum chamber 16 is evacuated by the automatic exhaust device 17 to form the substance T to be formed into a film and the main body 2.
During 0, for example, a high frequency voltage is applied. The accelerated inert gas ions knock out atoms and molecules from the surface of the substance (target) T to be formed into a film, so that an insulating layer film is first formed on each substrate W. The insulating layer film is SiO2 or the like. The substrate W is a portion used as a slider material of a thin film magnetic head, and is a general AlTiC material (Al2
O3 / Ti / C) is used. Thus, the substrate W
On the other hand, by forming an insulating layer film by sputtering, it is possible to obtain insulation between elements of the substrate and improve the surface property. The film thickness of the insulating layer film is, for example, 10 μm. Then, by changing the substance T to be formed into a film,
On the substrate W, a protective film which further plays a role of protecting the element is similarly formed by sputtering. The protective film is, for example, Al.
2O3 (alumina).

By the way, since the substrate mounting jig 10 is an insulator during the sputtering film formation as described above, abnormal discharge does not occur at the connecting portion 22 between the substrate mounting jig 10 and the main body 20 shown in FIG. No peeling of the protective film or insulating layer film occurs. Therefore, the film formation of the substrate W during the film formation can be reliably performed. When the film formation of the substrate W by the pair of substrate mounting jigs 10 is completed, the drive unit 3 of the rotating body in FIG.
0 can index the body 20 so that the next substrate mounting jig 10 can face the substance T on which the film is to be formed. Then, the insulating layer film and the protective film can be sequentially sputtered on the next substrate mounting jig 10 by the above-described sputtering method. By the way, the present invention is not limited to the above-mentioned embodiments, and the present invention can be applied to other fields besides forming a protective layer film or an insulating layer film on a thin film magnetic head.

[0012]

As described above, according to the present invention,
Since the film is not peeled off at the connecting portion between the substrate mounting jig and the main body, a high-purity substrate can be formed.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of a sputtering apparatus of the present invention.

FIG. 2 is a view showing an example of a substrate mounting jig in the sputtering apparatus of FIG.

3 is a diagram showing an example of a main body of the sputtering apparatus of FIG.

4 is a diagram showing a state in which the board mounting jig of FIG. 2 is mounted on the main body of FIG.

FIG. 5 is a view showing an example of a main body of a conventional sputtering apparatus and a substrate mounting jig.

[Explanation of symbols]

 10 Substrate mounting jig 20 Main body 100 Sputtering device W Wafer (substrate)

Claims (3)

[Claims] 1. A sputtering apparatus for sputtering a substrate, comprising a substrate mounting jig made of an insulating material for holding the substrate to be sputtered, and a plurality of substrate mounting jigs. A sputtering apparatus comprising: a main body. 2. The sputtering apparatus according to claim 1, wherein the substrate mounting jig is made of quartz glass. 3. The sputtering apparatus according to claim 1, wherein an insulating layer and an alumina protective layer are formed on the substrate to manufacture a thin film magnetic head.