JP2000012366A - Manufacture of soft magnetic film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing with a high mass-productivity a soft magnetic film exhibiting a high permeability having desired magnetic anisotropy required by different types of magnetic head and a high saturation magnetic flux density. SOLUTION: For manufacturing a soft magnetic film containing Fe as major constituent, 5-20 atom % of N and 5-15 atom % of M (at least one element out of Ta, Zr, Hf, Nb and Ti), a cylindrical substrate holder 9 round the perimeter of which substrates 8 are placed and which rotates around a central axis 14, and is placed through an insulating material 13 between itself and a vacuum chamber 2; and a substrate holder rotation reaction type bias sputtering device, having at least one sputtering electrode 4 on which sputtering targets 3 are placed on positions opposed to the substrate placing surface of the substrate holder 9, and having also at least two systems of sputtering gas introducing systems 11 and 18; are used. A soft magnetic film exhibiting a high magnetic permeability having desired magnetic anisotropy is manufactured with a high mass-productivity by controlling the sputtering conditions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a soft magnetic film mainly used as a core material of a magnetic head in a magnetic recording and reproducing apparatus such as a magnetic recording and reproducing apparatus (VTR) and a magnetic recording and reproducing apparatus. is there.

[0002]

2. Description of the Related Art In order to increase the density of the magnetic recording field in accordance with recent advances in digital technology, it is essential to increase the coercive force of a magnetic recording medium and to improve the performance of a magnetic head. To achieve high-density recording in a magnetic head, along with the miniaturization of the track width and gap length of the magnetic head, high saturation magnetic flux density (mainly affecting recording characteristics) and high magnetic permeability (mainly affecting reproduction characteristics) are required. There is a need for a material using a soft magnetic film having the same as a core material, and various developments are underway.

As a typical type of high performance magnetic head, a core material in which a soft magnetic film and an insulating film are alternately stacked in the track width direction is sandwiched between non-magnetic substrates such as ceramics. A MIG head (Metal-In-Gap) with a ring-type laminated head that constitutes a circuit, or a MIG head in which the magnetic circuit is mostly made of ferrite and a soft magnetic film is provided only in the vicinity of a magnetic gap that is easily magnetically saturated Abbreviation). For this reason, a soft magnetic film having isotropic high permeability characteristics is used as the core material of the laminated head, while a high magnetic permeability which induces in-plane uniaxial anisotropy is used for the MIG head. Soft magnetic films having characteristics are required respectively.

On the other hand, as typical types of soft magnetic films, sendust (Fe-Al-Si) alloy films, Co-based amorphous alloy films and the like have been put to practical use, but the saturation magnetic flux density is low. These conventional materials have limitations in realizing high-density recording using a medium having a low coercive force, which is as low as about 1 T (tesla). Therefore, in recent years, research and development of a soft magnetic film having a high saturation magnetic flux density and a high magnetic permeability have been actively performed. As one of them, F mainly composed of Fe
e-MN-based film (where M is Ta, Zr, Hf, N
b, at least one element of Ti).

[0005] On the other hand, as a method for producing these soft magnetic films, vapor deposition and sputtering using a vacuum technique are mainly used. In particular, sputtering is performed by adjusting the composition of a target which is a raw material of a thin film to be formed. This is the most commonly used thin film forming technique at present, because a thin film having a desired composition can be obtained relatively easily over a wide range. Hereinafter, a conventional general sputtering apparatus will be described with reference to FIG. FIG. 10 is a front sectional view of a general sputtering apparatus. In FIG. 10, a vacuum chamber 10 to which an evacuation system 101 is connected is shown.
A sputtering electrode 104 having a sputtering target 103 is disposed on the inner wall of the second electrode 2 via an insulating material 105, and a sputtering power supply 107 is connected via a matching circuit 106 (for high-frequency sputtering). Substrate 10 on which a thin film is formed in a vacuum chamber
8 is provided. Further, a sputtering gas 1 is placed in the vacuum chamber 101.
10 (usually Ar gas) is connected via a gas introduction system 111.

[0006] Sputtering (thin film formation) with the above apparatus
First, the inside of the vacuum chamber is evacuated to a high vacuum (about 10 ⁻⁵ Pa) by a vacuum evacuation system 101 such as a vacuum pump, and a discharge gas 110 such as Ar is adjusted by a gas flow controller 111 to form a vacuum chamber. Into the pressure control valve 1
12 to adjust the pressure in the vacuum chamber to 0.1 to 10
Keep to about Pa. Here, a plasma is generated by applying a negative voltage from a DC or AC sputtering power supply 107 to the sputtering electrode 104 to which the target 103 is attached, and the target is sputtered, and the sputtered particles protruding are set on the substrate holder 109. A thin film is formed on the substrate 108 thus formed.

[0007]

However, in a sputtering apparatus (stationary opposed type) having a configuration as shown in FIG. 10, in order to ensure uniformity of the film thickness, the area where the substrate in the substrate holder can be set depends on the target size. It is limited and is not suitable for mass production. For this reason, at present, a substrate holder rotating type (also called a carousel type) that performs sputtering while rotating a cylindrical substrate holder on which a plurality of substrates are placed on the outer peripheral surface, or a tray on which a plurality of substrates are mounted is used as a sputtering target. 2. Description of the Related Art A sputtering apparatus that can form a thin film having a uniform thickness and characteristics on a large amount of substrates at a time, such as a substrate tray passing type that performs sputtering while passing the front surface, is often used as mass production equipment.

[0008] However, the rotary-type or pass-through type sputtering apparatus has a feature that a thin film can be formed on a large number of substrates at once, but the sputtering reaches the substrate because the sputtering is performed while moving or rotating the substrate. Most of the sputtered particles are constituted by oblique incident components. For this reason, when a soft magnetic film is formed, strong uniaxial magnetic anisotropy is likely to be induced in the substrate movement direction, and it is difficult to form a soft magnetic film having isotropic magnetic permeability. In addition, in the direction perpendicular to the substrate movement direction, a magnet having a non-uniform magnetic permeability due to the magnetic field of a magnet for magnetron sputtering (usually disposed on or near the rear surface of the target in order to increase the deposition rate). A film is formed.

As described above, in the production of a soft magnetic thin film, the core material of the laminated type head has an isotropic high permeability property in the film plane, and a core material such as a MIG head or a thin film head. It is very important to control the magnetic anisotropy, for example, as a material, a soft magnetic film having high magnetic permeability characteristics that induces in-plane uniaxial magnetic anisotropy is required. Therefore, an object of the present invention is to solve the above-mentioned problems and to produce a soft magnetic film having desired magnetic anisotropy required for various magnetic heads and having high magnetic permeability and high saturation magnetic flux density with good mass productivity. It provides a method.

[0010]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention has the following arrangement. According to the first embodiment of the present invention, Fe is a main component and N (nitrogen) is 5 to 5.
20 atomic% and M (where M is Ta, Z
r, Hf, Nb, at least one element of Ti)
In a method of manufacturing a soft magnetic film having a composition containing 15 atomic%, a substrate is placed on an outer peripheral surface, rotated around a central axis, and further provided with an insulating material between the substrate and a vacuum chamber. A cylindrical substrate holder, at least one sputtering electrode provided with a sputtering target at a position facing the substrate mounting surface of the substrate holder, and at least two sputtering gas introduction systems.
Using a substrate holder rotating type reactive bias sputtering apparatus having a system, the nitrogen gas flow ratio (N
_{The present} invention provides a method for producing a soft magnetic film, characterized in that sputtering is performed with the ratio of ( ₂ gas flow rate / Ar gas flow rate) being 4 to 8%.

According to the second aspect of the present invention, during sputtering, the gas pressure in the vacuum chamber is 0.1 to
The method for producing a soft magnetic film according to the first aspect, wherein the pressure is 1 Pa.

According to a third aspect of the present invention, the sputtering is performed by arbitrarily setting a rotation speed of a substrate holder on which a substrate on which a soft magnetic film is to be formed is set, and performing sputtering. A method for manufacturing a membrane is provided.

According to a fourth aspect of the present invention, the rotation speed of the substrate holder on which the substrate on which the soft magnetic film is to be formed is set is 3 to 10
A method for producing a soft magnetic film according to the third aspect, wherein sputtering is performed at rpm.

According to a fifth aspect of the present invention, the soft magnetic film is formed while applying a negative bias voltage to the substrate on which the soft magnetic film is to be formed. A method for manufacturing a membrane is provided.

According to the sixth aspect of the present invention, the negative bias voltage applied to the substrate on which the soft magnetic film is formed is 0.05 to
A method for producing a soft magnetic film according to the fifth aspect, wherein the method is 0.25 W / cm ² .

According to a seventh aspect of the present invention, at least two soft magnetic films are provided using the substrate holder rotary reactive bias sputtering apparatus according to the first aspect, and the soft magnetic film and the insulating film are provided. Are formed alternately to form a multilayer soft magnetic film.

According to an eighth aspect of the present invention, at least two
Each of the soft magnetic films of the multilayer soft magnetic film having a soft magnetic film of a layer and alternately laminating a soft magnetic film and an insulating film is provided with a nitrogen gas flow ratio, a sputtering gas pressure, a negative bias voltage, 8. The method according to claim 7, wherein the at least one sputtering condition selected from the rotation speed is changed to two or more types.

According to the present invention, a soft magnetic film having desired magnetic anisotropy required for various magnetic heads and having high magnetic permeability and high saturation magnetic flux density can be manufactured with high mass productivity.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments according to the present invention will be described below in detail with reference to FIGS. First, an outline of five embodiments of the present invention will be described. The method for manufacturing a soft magnetic film according to the first embodiment of the present invention includes Fe as a main component, N (nitrogen) in an amount of 5 to 20 atomic%, and M
(Where M is at least one element of Ta, Zr, Hf, Nb, and Ti). In a method for manufacturing a soft magnetic film having a composition containing 5 to 15 atomic%, a substrate is placed on an outer peripheral surface. A cylindrical substrate holder which was rotated about a central axis and further provided with an insulating material between the vacuum chamber and a vacuum chamber, and a sputtering target was installed at a position facing the substrate installation surface of the substrate holder. Using a substrate holder rotating type reactive bias sputtering apparatus having at least one sputtering electrode and at least two systems for introducing a gas for sputtering, a nitrogen gas flow ratio (N ₂ gas flow rate) in a gas atmosphere during sputtering. / Ar gas flow rate) is controlled to 4 to 8%. If the high magnetic permeability required for various magnetic heads is high, Has an effect of high saturation magnetic flux density can be manufactured with good mass productivity of the soft magnetic film exhibiting the.

The method of manufacturing a soft magnetic film according to the second embodiment of the present invention is characterized in that, in the method of manufacturing a soft magnetic film of the first embodiment, the gas pressure during sputtering is controlled to 0.1 to 1 Pa. This has the effect that a soft magnetic film having desired magnetic anisotropy required for various magnetic heads and having a high magnetic permeability and a high saturation magnetic flux density can be manufactured with good mass productivity.

The method of manufacturing a soft magnetic film according to the third embodiment of the present invention is the same as the method of manufacturing a soft magnetic film of the first embodiment, except that the rotation speed of the substrate holder on which the substrate on which the soft magnetic film is formed is set to 3 In the same manner as in the second embodiment, a soft magnetic film having high magnetic permeability and high saturation magnetic flux density having desired magnetic anisotropy required for various magnetic heads is provided. It has the effect that it can be manufactured with good mass productivity.

The method of manufacturing a soft magnetic film according to the fourth embodiment of the present invention is the same as the method of manufacturing a soft magnetic film of the first embodiment, except that the negative bias voltage applied to the substrate on which the soft magnetic film is formed is set to 0.1. 0.5 to 0.25 W / cm ² , and a soft magnetic film having a high magnetic permeability and a high saturation magnetic flux density in which the direction of the magnetic anisotropy in the film surface is reversed is excellent in mass productivity. It has the effect that it can be manufactured.

The method for manufacturing a soft magnetic film according to the fifth embodiment of the present invention is directed to a method for manufacturing a soft magnetic film in which a soft magnetic film and an absolutely green film are alternately laminated, and each soft magnetic film is formed via an insulating film. The sputtering conditions are changed (under the conditions of at least two of the first to fourth embodiments) so that the direction of the magnetic anisotropy of at least one layer is different from that of the other layers. It is characterized by forming a film, and produces a soft magnetic film exhibiting isotropic high magnetic permeability and high saturation magnetic flux density in the film plane required for the core material of the laminated type head with good mass productivity. It has the effect of being able to.

(Embodiment 1) Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. First, a substrate holder rotating reactive bias sputtering apparatus will be described with reference to FIG. FIG. 1A is a front sectional view of a substrate rotation type reactive bias sputtering apparatus, and FIG. 1B is a plan sectional view thereof. In FIG. 1, a sputtering electrode 4 having a sputtering target 3 is provided on an inner wall of a vacuum chamber 2 to which a vacuum exhaust system 1 is connected.
Are provided via an insulating material 5 and a sputtering power source 7 is connected via a matching circuit 6 (in the case of high-frequency sputtering). As shown in FIG. 1B, a plurality of (four in the example shown) the sputtering electrodes 4 are arranged so as to face the outer peripheral surface of the substrate holder 9. In the vacuum chamber, a cylindrical substrate holder 9 on which the substrate 8 can be placed is provided between the vacuum chamber 2 and the vacuum chamber 2 via an insulating material 13, and a motor or the like is provided so as to be able to rotate around its central axis 14. (Not shown) are connected. Further, a bias power supply 16 is connected to the substrate holder 9 via a matching circuit 15 so that a bias voltage can be applied. Further, a reactive sputtering gas 17 and an introduction system 18 are connected to the introduction system 11 for the sputtering gas 10 (usually Ar gas).

Sputtering (thin film formation) with the above apparatus
First, the inside of the vacuum chamber is evacuated to a high vacuum (about 10 ⁻⁵ Pa) by a vacuum exhaust system 1 such as a vacuum pump.
The discharge gas 10 such as Ar is introduced into the vacuum chamber by adjusting the gas flow controller 11, and the pressure in the vacuum chamber is maintained at about 0.1 to 1 Pa by adjusting the pressure adjusting valve 12. When the thin film to be formed is a compound with the reactive gas 17, the reactive sputtering gas 17 is introduced simultaneously with the discharge gas 10, and the ratio of the two gases is adjusted by the gas flow controller 18 in the same manner as the discharge gas 10. (Reactive sputtering). Here, the substrate holder 9 on which the substrate 8 is mounted
Is rotated about a substrate holder central axis 14 by a substrate rotating mechanism (not shown), and a DC or AC sputtering power supply 7 applies a negative voltage to the sputtering electrode 4 to which the target 3 is attached. Plasma is generated, the target 3 is sputtered, and the sputtered particles sputtered out are deposited on the substrate 8 placed on the rotating outer surface of the substrate holder to form a thin film.

Next, as a specific example, the above-described reactive bias sputtering apparatus with a substrate holder rotating type is used.
FIG. 2 shows a method of forming a multilayer soft magnetic film of an Fe—Ta—N film and a SiO ₂ film and characteristics (permeability characteristics) of the soft magnetic film.
This will be described with reference to FIGS. FIG. 2 is a schematic plan view of the reactive bias sputtering apparatus for rotating a substrate holder according to the present embodiment. As the sputtering targets, three rectangular Fe—Ta targets and one SiO ₂ target (all 381 mm × 127 mm) were used.
a-N film was prepared by reactive sputtering in a mixed gas atmosphere of Ar and N _2. A non-magnetic ceramic substrate was used as a substrate for forming the soft magnetic film, and the substrate was set on a substrate holder having a substrate cooling mechanism, and a thin film was formed while rotating the substrate holder.

First, three sputtering electrodes provided with Fe—Ta targets were used, and Ar gas flow rate: 100 sc
cm and N ₂ gas flow rate: 5 sccm in a mixed gas (N ₂ flow ratio: 5
%) To form a Fe—Ta—N film on a ceramic substrate by 0.4%.
μm was formed. Other conditions include a sputtering pressure of 0.53 Pa, a sputtering power of 2 kW, and a substrate holder rotation speed of 3 rpm. Next, the SiO ₂ film is
Gas flow rate: 100 sccm, sputtering pressure: 0.93 Pa, sputtering power: 2 kW, substrate holder rotation speed: 10 rpm
To form 5 nm. By repeating the above steps, Fe-Ta
A multilayer soft magnetic film (total thickness: about 2.4 μm) having a structure in which six layers of —N films are laminated with five layers of SiO ₂ films is formed at 550 ° C.
Heat treatment was performed for 1 hour in a magnetic field-free vacuum, and the magnetic permeability was measured.

FIG. 3 shows the result of the dependence of the initial permeability μ 'in the film plane at 10 kHz on the substrate position. The substrate position in FIG. 3 indicates the vertical direction of the substrate holder (a direction at 90 ° to the rotation direction of the substrate holder), where the minus sign is above the center of the board and the plus sign is below. Μ′x is the value of μ ′ in the substrate holder rotation direction, and μ′y is the value of μ ′ in the direction of 90 ° with respect to the substrate holder rotation direction. FIG. 3 shows that μ′x shows a value of 6000 or more and μ′y shows a value of 1500 or more at any substrate position. In addition, since the directions of magnetic anisotropy are aligned in one direction, the multilayer soft magnetic film of the present embodiment is most suitable as a device requiring uniaxial magnetic anisotropy such as the core material of the MIG head. . Further, since a large number of substrates can be processed at one time, it can be manufactured with high mass productivity.

(Embodiment 2) In the same manner as in Embodiment 1, the sputtering pressure is controlled to 0.27 Pa and Fe--Ta
FIG. 4 shows the results of the substrate position dependence of the initial magnetic permeability μ ′ of the multilayer soft magnetic film at 10 kHz when the −N film was formed. Other sputtering conditions and heat treatment conditions are the same as those in the first embodiment. From FIG. 4, it can be seen that μ′x and μ′y show high magnetic permeability of 3500 to 6500 at both substrate positions, and that the magnetic anisotropy is almost isotropic. . For this reason, the multilayer soft magnetic film of the present embodiment is most suitable as a device requiring an isotropic high magnetic permeability, such as the core material of the laminated head. Further, since a large number of substrates can be processed at one time, it can be manufactured with high mass productivity.

(Embodiment 3) In the same manner as in Embodiment 1, the substrate holder rotation speed is controlled to 10 rpm, and
FIG. 5 shows the results of the substrate position dependence of the initial magnetic permeability μ ′ in the film surface at 10 kHz of the multilayer soft magnetic film when the −Ta—N film was formed. Other sputtering conditions and heat treatment conditions are the same as those in the first embodiment. 5, the values of μ′x and μ′y are almost linearly inverted from the center of the substrate to the end (−90 mm), and μ′x has high magnetic permeability near the center of the substrate.
Conversely, at the end, μ'y has high magnetic permeability (both 8000 or more)
Is shown. In other words, the multilayer soft magnetic film of the present embodiment is most suitable for a device that needs to be inclined in the direction of magnetic anisotropy in the plane of the substrate. Further, since a large number of substrates can be processed at one time, it can be manufactured with high mass productivity.

(Embodiment 4) A negative bias voltage (13.56 MHz RF power supply) is applied to the substrate holder during the Fe-Ta-N film formation in the same manner as in Embodiment 1.
FIG. 6 shows the results of the substrate position dependence of the initial magnetic permeability μ ′ in the film plane at 10 kHz of a multilayer soft magnetic film formed while applying an F power of 1200 W and a power density of 0.2 W / cm ² ). The other sputtering conditions and heat treatment conditions are the same as in the first embodiment. From FIG. 6, μ′x shows a value of 1000 or more and μ′y shows a value of 5500 or more at any substrate position, and the directions of magnetic anisotropy are aligned in one direction. Similarly to the above, it is optimal as a core material such as the MIG head, and can process a large number of substrates at once, so that it can be manufactured with high mass productivity. Also,
In the present embodiment, the high magnetic permeability is uniform in the direction perpendicular to the substrate holder (in the direction of 90 ° with respect to the rotation direction of the substrate holder), and the direction of the magnetic anisotropy is inverted as compared with the first embodiment. . Therefore, it is effective when a soft magnetic film having a high magnetic permeability in the vertical direction of the substrate holder is required for mounting the substrate on the substrate holder.

(Embodiment 5) In the same multilayer soft magnetic film structure as in Embodiments 1-4, the first, second, fourth and fifth layers of Fe-T
The sputtering conditions for the a-N film were as follows: N ₂ gas flow rate: 5 sccm, R
F bias power: 1200 W (power density: 0.2 W / c
m ² ), and the sputtering conditions for the third and sixth layers were as follows: N ₂ gas flow rate: 6 sccm, RF bias power: 960 W (power density:
FIG. 8 shows the results of the substrate position dependence of the initial magnetic permeability μ ′ in the film surface at 10 kHz of the multilayer soft magnetic film when the film was formed at a control of 0.16 W / cm ² ). The other sputtering conditions and heat treatment conditions are the same as in the first embodiment. From FIG. 8, μ′x
And μ′y are 3 at both substrate positions.
Since it has a high magnetic permeability of 500 to 6500 and is almost isotropic with respect to magnetic anisotropy, it is most suitable as a core material for the laminated head and the like as in the second embodiment. Since a large number of substrates can be processed at a time, it can be manufactured with good mass productivity.

The structure of the multilayer soft magnetic film of the present embodiment is the same as that of the Fe—Ta—N film (see FIG. 6) having a high μ ′ in the vertical direction of the substrate holder shown in the fourth embodiment, as shown in FIG. high Fe-Ta-N film mu 'to the substrate holder rotational direction (N ₂
Gas flow rate: 6 sccm, RF bias power: 960 W, and other sputtering conditions and heat treatment conditions are the same as in the first embodiment) in a ratio of 2: 1. That is,
An isotropic multilayer soft magnetic film is formed by laminating soft magnetic films having different directions of magnetic anisotropy via an interlayer insulating film.

FIG. 9 shows the frequency characteristics of the effective magnetic permeability μ of an arbitrary sample (substrate position: −70 mm) of the multilayer soft magnetic film formed in the present embodiment. Here, μx and μ
In the same manner as described above, y is a value of μ in which μx is in the direction of rotation of the substrate holder, and μy is a value of 90 ° in the direction of rotation of the substrate holder. Both μx and μy are 5,000 or more in the low frequency band (1 MHz) and 2,000 or more in the high frequency band (for example, 50 MHz), and a multilayer soft magnetic film having excellent frequency characteristics and isotropic and having high magnetic permeability is obtained. You can see that there is.

As described above, in the first to fifth embodiments, Fe-Ta
Although the -N film has been described in detail, the main component is Fe,
Contains 5 to 20 atomic% of N (nitrogen) and M (however,
M has the same effect also in a soft magnetic film having a composition containing 5 to 15 atomic% of at least one element of Ta, Zr, Hf, Nb, and Ti). Embodiments 1 to 5
In the above, a multilayer soft magnetic film (total thickness: about 2.4 μm) having a configuration in which six Fe—Ta—N films are stacked with five SiO ₂ films is used. However, the Fe—Ta—N film and the SiO ₂ film Alternatively, the thickness and the number of layers (including a single Fe—Ta—N layer) may be changed.

[0036]

According to the method for producing a soft magnetic film of the present invention,
As is clear from the above description, Fe is the main component and N
(Nitrogen) and M (where M
Is a method of manufacturing a soft magnetic film having a composition containing 5 to 15 atomic% of at least one element of Ta, Zr, Hf, Nb, and Ti).
A cylindrical substrate holder that is rotated around a central axis and further placed between a vacuum chamber and an insulating material, and a sputtering target is placed at a position facing the substrate placement surface of the substrate holder. Using a substrate holder rotating reactive bias sputtering apparatus having at least one electrode and at least two systems for introducing a sputtering gas, a nitrogen gas flow ratio (N ₂ gas flow /
By controlling the Ar gas flow rate to 4 to 8%, a soft magnetic film exhibiting high magnetic permeability and high saturation magnetic flux density required for various magnetic heads can be manufactured with good mass productivity.

Further, by controlling the gas pressure during sputtering to 0.1 to 1 Pa, a soft magnetic material having desired magnetic anisotropy required for various magnetic heads and having high magnetic permeability and high saturation magnetic flux density can be obtained. The magnetic film can be manufactured with good mass productivity. Also, by controlling the rotation speed of the substrate holder on which the substrate on which the soft magnetic film is formed is set to 3 to 10 rpm, high magnetic permeability and high saturation having desired magnetic anisotropy required for various magnetic heads can be obtained. A soft magnetic film exhibiting a magnetic flux density can be manufactured with good mass productivity. Further, a negative bias voltage of 0.05 to 0.2 is applied to the substrate on which the soft magnetic film is formed.
By controlling and applying 5 W / cm ² , a soft magnetic film having high magnetic permeability and high saturation magnetic flux density in which the direction of magnetic anisotropy in the film surface is reversed can be manufactured with good mass productivity. In a multilayer soft magnetic film in which soft magnetic films and insulating films are alternately laminated, the direction of magnetic anisotropy of each soft magnetic film formed via the insulating film is different from at least one other layer. Then, by forming the soft magnetic film under different sputtering conditions, a soft magnetic film exhibiting isotropic high magnetic permeability and high saturation magnetic flux density in the film surface required for the core material of the multilayer head is mass-produced. It can be manufactured with good quality.

[Brief description of the drawings]

FIG. 1A is a front sectional view of a substrate holder rotating reactive bias sputtering apparatus according to a first embodiment of the present invention, and FIG.

FIG. 2 is a schematic plan view of a substrate holder rotating reactive bias sputtering apparatus according to Embodiment 1 of the present invention.

FIG. 3 is a diagram showing the substrate position dependence of the in-plane initial magnetic permeability μ ′ of the multilayer soft magnetic film according to the first embodiment of the present invention.

FIG. 4 is a diagram showing the dependence of the in-plane initial magnetic permeability μ ′ on the substrate position of the multilayer soft magnetic film according to the second embodiment of the present invention.

FIG. 5 is a diagram showing the substrate position dependence of the in-plane initial magnetic permeability μ ′ of the multilayer soft magnetic film according to the third embodiment of the present invention.

FIG. 6 is a diagram showing the substrate position dependence of the in-plane initial magnetic permeability μ ′ of the multilayer soft magnetic film according to the fourth embodiment of the present invention.

FIG. 7 is a diagram showing the substrate position dependence of the initial magnetic permeability μ ′ in the plane of the Fe—Ta—N film used as the third and sixth layers of the multilayer soft magnetic film according to the fifth embodiment of the present invention.

FIG. 8 is a diagram showing the substrate position dependence of the in-plane initial magnetic permeability μ ′ of the multilayer soft magnetic film according to the fifth embodiment of the present invention.

FIG. 9 is a diagram showing a frequency characteristic of an effective magnetic permeability μ of the multilayer soft magnetic film according to the fifth embodiment of the present invention.

FIG. 10 is a front sectional view of a conventional general sputtering apparatus.

[Explanation of symbols]

 3 Target 4 Sputtering electrode 8 Substrate 9 Substrate holder 14 Center axis of substrate holder 17 Reactive sputtering gas

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Shunsaku Muraoka 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Hiroshi Seki 1006 Kadoma Kadoma Kadoma City, Osaka Matsushita Electric Industrial F Terms (reference) 5D033 BA03 DA03 5D093 AA01 BB18 BC18 BD01 BD08 FA12 FA16 HA17 JA01 5E049 AA01 AA09 AC05 BA12 GC02 GC04

Claims (8)

[Claims] 1. An alloy containing Fe as a main component and N (nitrogen) in an amount of 5-2.
0 atomic% and M (where M is Ta, Zr,
At least one element of Hf, Nb and Ti) from 5 to 15
A method for producing a soft magnetic film having a composition containing at.
Along with placing the substrate on the outer peripheral surface, rotating around the central axis, and furthermore, a cylindrical substrate holder disposed via an insulating material between the vacuum chamber and a substrate mounting surface of the substrate holder. At least one sputtering electrode provided with a sputtering target is provided at the facing position,
And the introduction system of the sputtering gas used at least two systems the substrate holder rotating type reactive bias sputtering device having, a sputtering nitrogen gas flow ratio in the gas atmosphere (N ₂ gas flow rate / Ar flow rate) as 4% to 8% A method for producing a soft magnetic film. 2. The method according to claim 1, wherein the gas pressure in the vacuum chamber during sputtering is 0.1 to 1 Pa. 3. The method of manufacturing a soft magnetic film according to claim 1, wherein the sputtering is performed by arbitrarily setting the rotation speed of a substrate holder on which the substrate on which the soft magnetic film is to be formed is installed. 4. The method for producing a soft magnetic film according to claim 3, wherein sputtering is performed at a rotation speed of a substrate holder on which the substrate on which the soft magnetic film is formed is set at 3 to 10 rpm. 5. The method of manufacturing a soft magnetic film according to claim 1, wherein the soft magnetic film is formed while applying a negative bias voltage to a substrate on which the soft magnetic film is formed. 6. The method according to claim 5, wherein the negative bias voltage applied to the substrate on which the soft magnetic film is formed is 0.05 to 0.25 W / cm ² . 7. A multi-layer soft magnetic film having at least two soft magnetic films and alternately laminating a soft magnetic film and an insulating film by using the substrate holder rotating reactive bias sputtering apparatus according to claim 1. A method for manufacturing a soft magnetic film, comprising forming a magnetic film. 8. A multi-layered soft magnetic film having at least two soft magnetic films and alternately laminating a soft magnetic film and an insulating film, the soft magnetic film having a nitrogen gas flow ratio, a sputtering gas pressure, a negative 8. The method according to claim 7, wherein at least one sputtering condition selected from the bias voltage and the rotation speed of the substrate holder is changed to two or more.