JP2007142138A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007142138A
JP2007142138A JP2005333656A JP2005333656A JP2007142138A JP 2007142138 A JP2007142138 A JP 2007142138A JP 2005333656 A JP2005333656 A JP 2005333656A JP 2005333656 A JP2005333656 A JP 2005333656A JP 2007142138 A JP2007142138 A JP 2007142138A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode
gate wiring
metal film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005333656A
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English (en)
Japanese (ja)
Other versions
JP2007142138A5 (enExample
Inventor
Atsushi Narasaki
敦司 楢崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005333656A priority Critical patent/JP2007142138A/ja
Priority to US11/427,608 priority patent/US20070114577A1/en
Priority to DE102006041575A priority patent/DE102006041575A1/de
Priority to KR1020060087828A priority patent/KR100778356B1/ko
Publication of JP2007142138A publication Critical patent/JP2007142138A/ja
Publication of JP2007142138A5 publication Critical patent/JP2007142138A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07636Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651Materials of strap connectors
    • H10W72/652Materials of strap connectors comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651Materials of strap connectors
    • H10W72/655Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/871Bond wires and strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • H10W72/983Reinforcing structures, e.g. collars

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005333656A 2005-11-18 2005-11-18 半導体装置 Pending JP2007142138A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005333656A JP2007142138A (ja) 2005-11-18 2005-11-18 半導体装置
US11/427,608 US20070114577A1 (en) 2005-11-18 2006-06-29 Semiconductor device
DE102006041575A DE102006041575A1 (de) 2005-11-18 2006-09-05 Halbleitervorrichtung
KR1020060087828A KR100778356B1 (ko) 2005-11-18 2006-09-12 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005333656A JP2007142138A (ja) 2005-11-18 2005-11-18 半導体装置

Publications (2)

Publication Number Publication Date
JP2007142138A true JP2007142138A (ja) 2007-06-07
JP2007142138A5 JP2007142138A5 (enExample) 2008-01-24

Family

ID=38047775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005333656A Pending JP2007142138A (ja) 2005-11-18 2005-11-18 半導体装置

Country Status (4)

Country Link
US (1) US20070114577A1 (enExample)
JP (1) JP2007142138A (enExample)
KR (1) KR100778356B1 (enExample)
DE (1) DE102006041575A1 (enExample)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010134371A1 (ja) * 2009-05-19 2010-11-25 シャープ株式会社 電子部品素子
JP2011086852A (ja) * 2009-10-19 2011-04-28 Toyota Motor Corp 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011249491A (ja) * 2010-05-26 2011-12-08 Mitsubishi Electric Corp 電力用半導体装置
DE102011082781A1 (de) 2010-09-29 2012-03-29 Mitsubishi Electric Corp. Halbleitervorrichtung
DE102011083243A1 (de) 2010-10-27 2012-05-03 Mitsubishi Electric Corp. Halbleitervorrichtung
JP2014107489A (ja) * 2012-11-29 2014-06-09 Toyota Motor Corp 半導体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
JP2017069569A (ja) * 2016-11-16 2017-04-06 三菱電機株式会社 半導体装置
JP2018098283A (ja) * 2016-12-09 2018-06-21 富士電機株式会社 半導体装置
JP2018133445A (ja) * 2017-02-15 2018-08-23 トヨタ自動車株式会社 半導体装置とその製造方法
JP2020077756A (ja) * 2018-11-07 2020-05-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2020155464A (ja) * 2019-03-18 2020-09-24 富士電機株式会社 半導体組立体および劣化検出方法
JP2021002683A (ja) * 2020-10-02 2021-01-07 ローム株式会社 半導体装置および半導体モジュール
JP2021007182A (ja) * 2020-10-19 2021-01-21 三菱電機株式会社 半導体装置及びその製造方法
JP2021036622A (ja) * 2020-12-03 2021-03-04 富士電機株式会社 半導体装置
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
US11257812B2 (en) 2015-02-13 2022-02-22 Rohm Co., Ltd. Semiconductor device and semiconductor module
JP2022130702A (ja) * 2020-12-03 2022-09-06 富士電機株式会社 半導体装置
JP2022130747A (ja) * 2021-03-18 2022-09-06 ローム株式会社 半導体装置
JP2022178755A (ja) * 2021-05-21 2022-12-02 富士電機株式会社 半導体モジュール
WO2023062781A1 (ja) * 2021-10-14 2023-04-20 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP2023073444A (ja) * 2021-12-23 2023-05-25 ローム株式会社 半導体装置
JP2023087383A (ja) * 2021-12-13 2023-06-23 三菱電機株式会社 半導体装置
US11862672B2 (en) 2012-03-12 2024-01-02 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556661B (zh) 2013-09-19 2018-07-24 三菱电机株式会社 半导体装置
CN111816652B (zh) * 2020-05-27 2024-07-16 华为技术有限公司 一种集成有温度传感器的igbt芯片
JP7680240B2 (ja) * 2021-03-30 2025-05-20 ローム株式会社 半導体装置
DE102024126594A1 (de) 2024-09-16 2026-03-19 Infineon Technologies Ag Elektronische Komponente mit einer gestapelter Barrierestruktur, einer Zwischenstruktur aufweisend Nickel und einer Kupfer- und/oder Aluminiumstruktur

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JPS6260236A (ja) * 1985-09-10 1987-03-16 Tdk Corp 縦形半導体装置およびその製造方法
JPH08227996A (ja) * 1995-02-20 1996-09-03 Fuji Electric Co Ltd 半導体装置
JP2002090422A (ja) * 2000-09-13 2002-03-27 Toshiba Corp 半導体装置及びその製造方法
JP2002252351A (ja) * 2001-02-26 2002-09-06 Sanyo Electric Co Ltd 半導体装置
JP2003133329A (ja) * 2001-08-09 2003-05-09 Denso Corp 半導体装置
JP2004111885A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置
JP2005116962A (ja) * 2003-10-10 2005-04-28 Denso Corp パッケージ型半導体装置
JP2005167075A (ja) * 2003-12-04 2005-06-23 Denso Corp 半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造

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JP4932088B2 (ja) * 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
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JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
JP2004349316A (ja) * 2003-05-20 2004-12-09 Renesas Technology Corp 半導体装置及びその製造方法
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JPS6260236A (ja) * 1985-09-10 1987-03-16 Tdk Corp 縦形半導体装置およびその製造方法
JPH08227996A (ja) * 1995-02-20 1996-09-03 Fuji Electric Co Ltd 半導体装置
JP2002090422A (ja) * 2000-09-13 2002-03-27 Toshiba Corp 半導体装置及びその製造方法
JP2002252351A (ja) * 2001-02-26 2002-09-06 Sanyo Electric Co Ltd 半導体装置
JP2003133329A (ja) * 2001-08-09 2003-05-09 Denso Corp 半導体装置
JP2004111885A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置
JP2005116962A (ja) * 2003-10-10 2005-04-28 Denso Corp パッケージ型半導体装置
JP2005167075A (ja) * 2003-12-04 2005-06-23 Denso Corp 半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010134371A1 (ja) * 2009-05-19 2010-11-25 シャープ株式会社 電子部品素子
JP2011086852A (ja) * 2009-10-19 2011-04-28 Toyota Motor Corp 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011249491A (ja) * 2010-05-26 2011-12-08 Mitsubishi Electric Corp 電力用半導体装置
DE102011082781B4 (de) * 2010-09-29 2016-07-07 Mitsubishi Electric Corp. Halbleitervorrichtung mit einer plattenelektrode zum verbinden einer mehrzahl an halbleiterchips
CN102437138A (zh) * 2010-09-29 2012-05-02 三菱电机株式会社 半导体装置
US8823151B2 (en) 2010-09-29 2014-09-02 Mitsubishi Electric Corporation Semiconductor device
US10529656B2 (en) 2010-09-29 2020-01-07 Mitsubishi Electric Corporation Semiconductor device
DE102011082781A1 (de) 2010-09-29 2012-03-29 Mitsubishi Electric Corp. Halbleitervorrichtung
DE102011083243A1 (de) 2010-10-27 2012-05-03 Mitsubishi Electric Corp. Halbleitervorrichtung
JP2012094669A (ja) * 2010-10-27 2012-05-17 Mitsubishi Electric Corp 半導体装置
US8692244B2 (en) 2010-10-27 2014-04-08 Mitsubishi Electric Corporation Semiconductor device
US11862672B2 (en) 2012-03-12 2024-01-02 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device
US12278262B2 (en) 2012-03-12 2025-04-15 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device
JP2014107489A (ja) * 2012-11-29 2014-06-09 Toyota Motor Corp 半導体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
US11916069B2 (en) 2015-02-13 2024-02-27 Rohm Co., Ltd. Semiconductor device and semiconductor module
US12300694B2 (en) 2015-02-13 2025-05-13 Rohm Co. Ltd. Semiconductor device and semiconductor module
US11495595B2 (en) 2015-02-13 2022-11-08 Rohm Co., Ltd. Semiconductor device and semiconductor module
US11257812B2 (en) 2015-02-13 2022-02-22 Rohm Co., Ltd. Semiconductor device and semiconductor module
US11670633B2 (en) 2015-02-13 2023-06-06 Rohm Co., Ltd. Semiconductor device and semiconductor module
JP2017069569A (ja) * 2016-11-16 2017-04-06 三菱電機株式会社 半導体装置
DE112016007485B4 (de) 2016-11-29 2024-10-24 Mitsubishi Electric Corporation Halbleitervorrichtung, Steuervorrichtung, und Verfahren zur Herstellung der Halbleitervorrichtung
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
JP2018098283A (ja) * 2016-12-09 2018-06-21 富士電機株式会社 半導体装置
JP2018133445A (ja) * 2017-02-15 2018-08-23 トヨタ自動車株式会社 半導体装置とその製造方法
JP2020077756A (ja) * 2018-11-07 2020-05-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7167639B2 (ja) 2018-11-07 2022-11-09 富士電機株式会社 半導体装置および半導体装置の製造方法
US11189534B2 (en) 2019-03-18 2021-11-30 Fuji Electric Co., Ltd. Semiconductor assembly and deterioration detection method
JP2020155464A (ja) * 2019-03-18 2020-09-24 富士電機株式会社 半導体組立体および劣化検出方法
JP7247681B2 (ja) 2019-03-18 2023-03-29 富士電機株式会社 半導体組立体
JP2021002683A (ja) * 2020-10-02 2021-01-07 ローム株式会社 半導体装置および半導体モジュール
JP7001785B2 (ja) 2020-10-02 2022-01-20 ローム株式会社 半導体装置および半導体モジュール
JP2021007182A (ja) * 2020-10-19 2021-01-21 三菱電機株式会社 半導体装置及びその製造方法
JP2021036622A (ja) * 2020-12-03 2021-03-04 富士電機株式会社 半導体装置
JP7160079B2 (ja) 2020-12-03 2022-10-25 富士電機株式会社 半導体装置
JP7302715B2 (ja) 2020-12-03 2023-07-04 富士電機株式会社 半導体装置
JP2022130702A (ja) * 2020-12-03 2022-09-06 富士電機株式会社 半導体装置
JP7194855B2 (ja) 2021-03-18 2022-12-22 ローム株式会社 半導体装置
JP2022130747A (ja) * 2021-03-18 2022-09-06 ローム株式会社 半導体装置
US12334409B2 (en) 2021-05-21 2025-06-17 Fuji Electric Co., Ltd. Semiconductor module
JP7718100B2 (ja) 2021-05-21 2025-08-05 富士電機株式会社 半導体モジュール
JP2022178755A (ja) * 2021-05-21 2022-12-02 富士電機株式会社 半導体モジュール
WO2023062781A1 (ja) * 2021-10-14 2023-04-20 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP7642087B2 (ja) 2021-10-14 2025-03-07 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JPWO2023062781A1 (enExample) * 2021-10-14 2023-04-20
JP2023087383A (ja) * 2021-12-13 2023-06-23 三菱電機株式会社 半導体装置
JP7707885B2 (ja) 2021-12-13 2025-07-15 三菱電機株式会社 半導体装置
JP7461534B2 (ja) 2021-12-23 2024-04-03 ローム株式会社 半導体装置
JP2023073444A (ja) * 2021-12-23 2023-05-25 ローム株式会社 半導体装置

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