JP7302715B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7302715B2 JP7302715B2 JP2022108379A JP2022108379A JP7302715B2 JP 7302715 B2 JP7302715 B2 JP 7302715B2 JP 2022108379 A JP2022108379 A JP 2022108379A JP 2022108379 A JP2022108379 A JP 2022108379A JP 7302715 B2 JP7302715 B2 JP 7302715B2
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- Prior art keywords
- semiconductor element
- gate
- semiconductor device
- plating layer
- gate runner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Electrodes Of Semiconductors (AREA)
Description
特許文献1 特開2003-115512号公報
立上り部は、接合部の第1端部に接続してよい。立上り部は、半導体素子の上面と離れる方向に延伸してよい。半導体素子の上面と平行な面内において、立上り部とゲートランナーとは重ならなくてよい。
Claims (10)
- 半導体素子と、
前記半導体素子の上面に設けられた上面電極と、
前記上面電極の上面に設けられためっき層と、
前記半導体素子の上面と前記上面電極との間に配置された第1絶縁膜と、
前記半導体素子の上面と平行な面内において、前記半導体素子と前記第1絶縁膜との間に設けられたゲート導電部と、前記半導体素子と前記第1絶縁膜との間に設けられ前記ゲート導電部から離間しつつ前記ゲート導電部を挟むように配置された2つの第1配線と、前記ゲート導電部および前記2つの第1配線の上方を覆うように配置され、平面視で前記めっき層に挟まれた第3絶縁膜と、を有するゲートランナーと、
前記上面電極と電気的に接続され、前記ゲートランナーを覆うように前記めっき層の上方に配置された接合部と、前記接合部の第1端部に接続し、かつ前記ゲートランナー全体と離間し、前記半導体素子の上面と離れる方向に延伸し、前記めっき層の上方に配置された立上り部と、を有する金属配線板と、
を備える半導体装置。 - 前記ゲートランナーの前記第3絶縁膜の上面は、前記めっき層の上面よりも前記金属配線板の前記接合部に近い請求項1に記載の半導体装置。
- 前記立上り部は、前記半導体素子の上面と垂直な方向に延伸している請求項1または2に記載の半導体装置。
- 前記半導体素子の状態を検出するセンス領域を有し、
前記ゲートランナーは、さらに、前記ゲート導電部の上に前記第1絶縁膜を介して配置され、前記上面電極から電気的に分離され、前記センス領域に接続されたセンサ用の配線を有する請求項1または2に記載の半導体装置。 - 前記ゲートランナーは、さらに、第2絶縁膜を介して前記センサ用の配線を挟むように前記上面電極と同電位の第2配線と、
前記第1絶縁膜を貫通して前記第1配線および前記第2配線を電気的に接続するプラグと、
を有する請求項4に記載の半導体装置。 - 前記半導体素子の上面と平行な面内において、平面視で前記上面の短辺と平行に配置されたゲートトレンチ部を更に備える
請求項1または2に記載の半導体装置。 - はんだ部が、前記ゲートランナー上に設けられ、前記めっき層と前記金属配線板の前記接合部を接続している請求項1または2に記載の半導体装置。
- 前記半導体素子上の前記上面電極の上面と平行な面内において、前記めっき層の外側に設けられたガードリングを備える請求項1または2に記載の半導体装置。
- 前記ゲートランナーと前記立上り部との第1距離L1は、前記立上り部と前記ガードリングとの第2距離L2より大きい請求項8に記載の半導体装置。
- 前記第1距離L1は、前記第2距離L2の1.5倍以上である請求項9に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2022108379A JP7302715B2 (ja) | 2020-12-03 | 2022-07-05 | 半導体装置 |
Applications Claiming Priority (2)
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JP2020201361A JP7160079B2 (ja) | 2020-12-03 | 2020-12-03 | 半導体装置 |
JP2022108379A JP7302715B2 (ja) | 2020-12-03 | 2022-07-05 | 半導体装置 |
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JP2020201361A Division JP7160079B2 (ja) | 2020-12-03 | 2020-12-03 | 半導体装置 |
Publications (2)
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JP2022130702A JP2022130702A (ja) | 2022-09-06 |
JP7302715B2 true JP7302715B2 (ja) | 2023-07-04 |
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JP2022108379A Active JP7302715B2 (ja) | 2020-12-03 | 2022-07-05 | 半導体装置 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005116962A (ja) | 2003-10-10 | 2005-04-28 | Denso Corp | パッケージ型半導体装置 |
JP2006210519A (ja) | 2005-01-26 | 2006-08-10 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2007142138A (ja) | 2005-11-18 | 2007-06-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2007227416A (ja) | 2006-02-21 | 2007-09-06 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010135677A (ja) | 2008-12-08 | 2010-06-17 | Denso Corp | 半導体装置 |
JP2011066371A (ja) | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
JP2012134198A (ja) | 2010-12-20 | 2012-07-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2014003095A (ja) | 2012-06-15 | 2014-01-09 | Denso Corp | 半導体装置 |
JP2016029710A (ja) | 2014-07-14 | 2016-03-03 | 株式会社デンソー | 半導体装置 |
-
2022
- 2022-07-05 JP JP2022108379A patent/JP7302715B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005116962A (ja) | 2003-10-10 | 2005-04-28 | Denso Corp | パッケージ型半導体装置 |
JP2006210519A (ja) | 2005-01-26 | 2006-08-10 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2007142138A (ja) | 2005-11-18 | 2007-06-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2007227416A (ja) | 2006-02-21 | 2007-09-06 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010135677A (ja) | 2008-12-08 | 2010-06-17 | Denso Corp | 半導体装置 |
JP2011066371A (ja) | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
JP2012134198A (ja) | 2010-12-20 | 2012-07-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2014003095A (ja) | 2012-06-15 | 2014-01-09 | Denso Corp | 半導体装置 |
JP2016029710A (ja) | 2014-07-14 | 2016-03-03 | 株式会社デンソー | 半導体装置 |
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JP2022130702A (ja) | 2022-09-06 |
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