DE102006041575A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102006041575A1
DE102006041575A1 DE102006041575A DE102006041575A DE102006041575A1 DE 102006041575 A1 DE102006041575 A1 DE 102006041575A1 DE 102006041575 A DE102006041575 A DE 102006041575A DE 102006041575 A DE102006041575 A DE 102006041575A DE 102006041575 A1 DE102006041575 A1 DE 102006041575A1
Authority
DE
Germany
Prior art keywords
semiconductor device
layer
metal layer
electrode
gate wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006041575A
Other languages
German (de)
English (en)
Inventor
Atsushi Narazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102006041575A1 publication Critical patent/DE102006041575A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102006041575A 2005-11-18 2006-09-05 Halbleitervorrichtung Withdrawn DE102006041575A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-333656 2005-11-18
JP2005333656A JP2007142138A (ja) 2005-11-18 2005-11-18 半導体装置

Publications (1)

Publication Number Publication Date
DE102006041575A1 true DE102006041575A1 (de) 2007-06-06

Family

ID=38047775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006041575A Withdrawn DE102006041575A1 (de) 2005-11-18 2006-09-05 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US20070114577A1 (enExample)
JP (1) JP2007142138A (enExample)
KR (1) KR100778356B1 (enExample)
DE (1) DE102006041575A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112013007447B4 (de) 2013-09-19 2022-01-27 Mitsubishi Electric Corporation Halbleitervorrichtung
DE102024126594A1 (de) 2024-09-16 2026-03-19 Infineon Technologies Ag Elektronische Komponente mit einer gestapelter Barrierestruktur, einer Zwischenstruktur aufweisend Nickel und einer Kupfer- und/oder Aluminiumstruktur

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272583A (ja) * 2009-05-19 2010-12-02 Sanyo Shinku Kogyo Kk 電子部品素子
JP5589342B2 (ja) * 2009-10-19 2014-09-17 トヨタ自動車株式会社 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011249491A (ja) * 2010-05-26 2011-12-08 Mitsubishi Electric Corp 電力用半導体装置
JP5414644B2 (ja) 2010-09-29 2014-02-12 三菱電機株式会社 半導体装置
JP5777319B2 (ja) * 2010-10-27 2015-09-09 三菱電機株式会社 半導体装置
JP6063629B2 (ja) 2012-03-12 2017-01-18 ローム株式会社 半導体装置および半導体装置の製造方法
JP5686128B2 (ja) * 2012-11-29 2015-03-18 トヨタ自動車株式会社 半導体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
JP6526981B2 (ja) 2015-02-13 2019-06-05 ローム株式会社 半導体装置および半導体モジュール
JP2017069569A (ja) * 2016-11-16 2017-04-06 三菱電機株式会社 半導体装置
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
JP6805776B2 (ja) * 2016-12-09 2020-12-23 富士電機株式会社 半導体装置
JP6897141B2 (ja) * 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
JP7167639B2 (ja) * 2018-11-07 2022-11-09 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7247681B2 (ja) * 2019-03-18 2023-03-29 富士電機株式会社 半導体組立体
CN111816652B (zh) * 2020-05-27 2024-07-16 华为技术有限公司 一种集成有温度传感器的igbt芯片
JP7001785B2 (ja) * 2020-10-02 2022-01-20 ローム株式会社 半導体装置および半導体モジュール
JP2021007182A (ja) * 2020-10-19 2021-01-21 三菱電機株式会社 半導体装置及びその製造方法
JP7160079B2 (ja) * 2020-12-03 2022-10-25 富士電機株式会社 半導体装置
JP7302715B2 (ja) * 2020-12-03 2023-07-04 富士電機株式会社 半導体装置
JP7105335B2 (ja) * 2021-03-18 2022-07-22 ローム株式会社 半導体装置
JP7680240B2 (ja) * 2021-03-30 2025-05-20 ローム株式会社 半導体装置
JP7718100B2 (ja) 2021-05-21 2025-08-05 富士電機株式会社 半導体モジュール
WO2023062781A1 (ja) * 2021-10-14 2023-04-20 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP7707885B2 (ja) * 2021-12-13 2025-07-15 三菱電機株式会社 半導体装置
JP7461534B2 (ja) * 2021-12-23 2024-04-03 ローム株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260236A (ja) * 1985-09-10 1987-03-16 Tdk Corp 縦形半導体装置およびその製造方法
JP2557898B2 (ja) * 1987-07-31 1996-11-27 株式会社東芝 半導体装置
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
JP3265894B2 (ja) * 1995-02-20 2002-03-18 富士電機株式会社 半導体装置
US5795833A (en) * 1996-08-01 1998-08-18 Taiwan Semiconductor Manufacturing Company, Ltd Method for fabricating passivation layers over metal lines
JPH10223624A (ja) * 1997-02-06 1998-08-21 Nec Yamagata Ltd 半導体装置の製造方法
JP2002090422A (ja) * 2000-09-13 2002-03-27 Toshiba Corp 半導体装置及びその製造方法
JP4932088B2 (ja) * 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP2002252351A (ja) * 2001-02-26 2002-09-06 Sanyo Electric Co Ltd 半導体装置
US20020163062A1 (en) * 2001-02-26 2002-11-07 International Business Machines Corporation Multiple material stacks with a stress relief layer between a metal structure and a passivation layer
JP3601529B2 (ja) * 2001-08-09 2004-12-15 株式会社デンソー 半導体装置
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
JP3673231B2 (ja) * 2002-03-07 2005-07-20 三菱電機株式会社 絶縁ゲート型半導体装置及びゲート配線構造の製造方法
JP2004111885A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
JP2004349316A (ja) * 2003-05-20 2004-12-09 Renesas Technology Corp 半導体装置及びその製造方法
JP3750680B2 (ja) * 2003-10-10 2006-03-01 株式会社デンソー パッケージ型半導体装置
JP2005167075A (ja) * 2003-12-04 2005-06-23 Denso Corp 半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造
US8049338B2 (en) * 2006-04-07 2011-11-01 General Electric Company Power semiconductor module and fabrication method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112013007447B4 (de) 2013-09-19 2022-01-27 Mitsubishi Electric Corporation Halbleitervorrichtung
DE102024126594A1 (de) 2024-09-16 2026-03-19 Infineon Technologies Ag Elektronische Komponente mit einer gestapelter Barrierestruktur, einer Zwischenstruktur aufweisend Nickel und einer Kupfer- und/oder Aluminiumstruktur

Also Published As

Publication number Publication date
KR20070053094A (ko) 2007-05-23
KR100778356B1 (ko) 2007-11-22
US20070114577A1 (en) 2007-05-24
JP2007142138A (ja) 2007-06-07

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