JP5777319B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5777319B2 JP5777319B2 JP2010240369A JP2010240369A JP5777319B2 JP 5777319 B2 JP5777319 B2 JP 5777319B2 JP 2010240369 A JP2010240369 A JP 2010240369A JP 2010240369 A JP2010240369 A JP 2010240369A JP 5777319 B2 JP5777319 B2 JP 5777319B2
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 229910021332 silicide Inorganic materials 0.000 claims description 31
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 31
- 230000036413 temperature sense Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1は、本発明の前提技術に係る半導体装置であるIGBTチップの構成を示す図であり、図1(a)は平面図、図1(b)は図1(a)のA−A´断面図である。
本実施の形態の半導体装置であるIGBTチップでは、低抵抗かつ強度のあるシリサイド膜(WSi2,TiSi2,CoSi2,NiSi2等)を用いてエミッタ電極を作成し、その上に絶縁膜を介して電極パッドの一例としてゲートパッドを形成する。そして、スルーホールにてゲートパッドとゲート配線とをコンタクトし、パッド直下の無効領域に有効セルを配置する。
図4は、本実施の形態の変形例に係るIGBTチップの平面図である。本実施の形態のIGBTチップではゲートパッド8直下の領域を有効領域とするため、ゲートパッド8をチップ内に複数配置しても無効領域が増えない。そのため、図4に示すように、ゲートパッド8をチップ内に複数個配置することが可能になる。これにより、ゲート抵抗の調整が容易になり、ゲート発振対策が容易になる。また、ゲートパッドを複数個配置することによってゲート遅延が解消され、セルのON/OFFのバランスが良くなり、短絡耐量及びRBSOA耐量が向上する。
本発明の半導体装置は、半導体層上に設けられた、シリサイド膜を備えて構成されるエミッタ電極7と、エミッタ電極7のシリサイド膜上に形成された絶縁膜10と、絶縁膜10上に形成されたAlからなる電極パッド8と、を備えるので、電極パッド8の直下領域を有効領域とすることが出来る。
Claims (8)
- 半導体層に設けられた複数のゲート電極と、
前記複数のゲート電極の直上の前記半導体層上に設けられた、シリサイド膜を備えて構成されるエミッタ電極と、
前記エミッタ電極の前記シリサイド膜上に形成された絶縁膜と、
前記絶縁膜上に形成されたAlからなる電極パッドと、を備えた半導体装置。 - 前記電極パッドは、ゲートパッド、カレントセンス電極パッド、温度センス電極パッドのいずれかとして用いられる、請求項1に記載の半導体装置。
- 前記電極パッドは、ゲートパッドとして用いられ、かつ複数備えられる、請求項2に記載の半導体装置。
- 前記シリサイド膜は、Alよりも強度の高いシリサイド膜からなる、請求項1〜3のいずれかに記載の半導体装置。
- 前記シリサイド膜はサリサイド膜で形成される、請求項1〜4のいずれかに記載の半導体装置。
- 前記エミッタ電極は、
分割された複数の前記シリサイド膜と、
前記複数のシリサイド膜上に共通に接続して形成されたエミッタ共通電極とを備える、請求項1〜5のいずれかに記載の半導体装置。 - 前記半導体層に形成された複数のゲート電極をさらに備え、
前記電極パッドは、ゲートパッドとして用いられ、
前記ゲートパッドと前記複数のゲート電極を電気的に接続するゲート配線をさらに備え、
前記ゲート配線はシリサイド膜を備えて形成されている、請求項2〜6のいずれかに記載の半導体装置。 - 前記半導体層は、Si,SiC,GaNのいずれかである、請求項1〜7のいずれかに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010240369A JP5777319B2 (ja) | 2010-10-27 | 2010-10-27 | 半導体装置 |
US13/173,324 US8692244B2 (en) | 2010-10-27 | 2011-06-30 | Semiconductor device |
CN201110198350XA CN102456632A (zh) | 2010-10-27 | 2011-07-15 | 半导体装置 |
DE102011083243.2A DE102011083243B4 (de) | 2010-10-27 | 2011-09-22 | Halbleitervorrichtung |
KR1020110101019A KR20120047763A (ko) | 2010-10-27 | 2011-10-05 | 반도체장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010240369A JP5777319B2 (ja) | 2010-10-27 | 2010-10-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012094669A JP2012094669A (ja) | 2012-05-17 |
JP5777319B2 true JP5777319B2 (ja) | 2015-09-09 |
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JP2010240369A Active JP5777319B2 (ja) | 2010-10-27 | 2010-10-27 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8692244B2 (ja) |
JP (1) | JP5777319B2 (ja) |
KR (1) | KR20120047763A (ja) |
CN (1) | CN102456632A (ja) |
DE (1) | DE102011083243B4 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013251513A (ja) * | 2012-06-04 | 2013-12-12 | Toshiba Corp | 半導体装置 |
JP6919713B2 (ja) | 2017-10-17 | 2021-08-18 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US20220045018A1 (en) * | 2018-11-20 | 2022-02-10 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
CN112687654B (zh) * | 2020-12-14 | 2024-02-23 | 株洲中车时代半导体有限公司 | 沟槽栅igbt器件 |
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IE52791B1 (en) | 1980-11-05 | 1988-03-02 | Fujitsu Ltd | Semiconductor devices |
JP2962136B2 (ja) * | 1994-03-16 | 1999-10-12 | 株式会社日立製作所 | 絶縁ゲート型半導体装置及びそれを用いた電力変換装置 |
DE19811297B4 (de) * | 1997-03-17 | 2009-03-19 | Fuji Electric Co., Ltd., Kawasaki | MOS-Halbleitervorrichtung mit hoher Durchbruchspannung |
US6153495A (en) * | 1998-03-09 | 2000-11-28 | Intersil Corporation | Advanced methods for making semiconductor devices by low temperature direct bonding |
JP2000058820A (ja) * | 1998-08-07 | 2000-02-25 | Hitachi Ltd | パワー半導体素子及びパワーモジュール |
EP1271654B1 (en) | 2001-02-01 | 2017-09-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
DE10212144B4 (de) * | 2002-03-19 | 2005-10-06 | Infineon Technologies Ag | Transistoranordnung mit einer Struktur zur elektrischen Kontaktierung von Elektroden einer Trench-Transistorzelle |
JP3637330B2 (ja) * | 2002-05-16 | 2005-04-13 | 株式会社東芝 | 半導体装置 |
CN1532943B (zh) | 2003-03-18 | 2011-11-23 | 松下电器产业株式会社 | 碳化硅半导体器件及其制造方法 |
KR100646135B1 (ko) * | 2003-07-21 | 2006-11-23 | 쌍신전자통신주식회사 | 실리콘 체적탄성파 소자 및 그 제조방법 |
JP2005327805A (ja) * | 2004-05-12 | 2005-11-24 | Renesas Technology Corp | 半導体装置およびその製造方法 |
DE102005021450B4 (de) * | 2005-05-10 | 2009-04-23 | Atmel Germany Gmbh | Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung |
JP2007042817A (ja) | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
JP2007142138A (ja) * | 2005-11-18 | 2007-06-07 | Mitsubishi Electric Corp | 半導体装置 |
JP5122762B2 (ja) * | 2006-03-07 | 2013-01-16 | 株式会社東芝 | 電力用半導体素子、その製造方法及びその駆動方法 |
JP4706551B2 (ja) | 2006-05-08 | 2011-06-22 | 株式会社日立製作所 | パワー半導体素子及びパワーモジュール |
DE102007008777B4 (de) | 2007-02-20 | 2012-03-15 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Zellenstruktur und Verfahren zur Herstellung desselben |
JP2010087124A (ja) * | 2008-09-30 | 2010-04-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP5407390B2 (ja) | 2009-02-09 | 2014-02-05 | トヨタ自動車株式会社 | 半導体装置 |
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2010
- 2010-10-27 JP JP2010240369A patent/JP5777319B2/ja active Active
-
2011
- 2011-06-30 US US13/173,324 patent/US8692244B2/en active Active
- 2011-07-15 CN CN201110198350XA patent/CN102456632A/zh active Pending
- 2011-09-22 DE DE102011083243.2A patent/DE102011083243B4/de active Active
- 2011-10-05 KR KR1020110101019A patent/KR20120047763A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
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DE102011083243B4 (de) | 2016-06-16 |
KR20120047763A (ko) | 2012-05-14 |
JP2012094669A (ja) | 2012-05-17 |
CN102456632A (zh) | 2012-05-16 |
DE102011083243A1 (de) | 2012-05-03 |
US20120104415A1 (en) | 2012-05-03 |
US8692244B2 (en) | 2014-04-08 |
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