KR100778356B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100778356B1
KR100778356B1 KR1020060087828A KR20060087828A KR100778356B1 KR 100778356 B1 KR100778356 B1 KR 100778356B1 KR 1020060087828 A KR1020060087828 A KR 1020060087828A KR 20060087828 A KR20060087828 A KR 20060087828A KR 100778356 B1 KR100778356 B1 KR 100778356B1
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KR
South Korea
Prior art keywords
semiconductor device
electrode
gate wiring
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020060087828A
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English (en)
Korean (ko)
Other versions
KR20070053094A (ko
Inventor
아쓰시 나라자키
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20070053094A publication Critical patent/KR20070053094A/ko
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Publication of KR100778356B1 publication Critical patent/KR100778356B1/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07636Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651Materials of strap connectors
    • H10W72/652Materials of strap connectors comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651Materials of strap connectors
    • H10W72/655Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/871Bond wires and strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • H10W72/983Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060087828A 2005-11-18 2006-09-12 반도체 장치 Expired - Fee Related KR100778356B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00333656 2005-11-18
JP2005333656A JP2007142138A (ja) 2005-11-18 2005-11-18 半導体装置

Publications (2)

Publication Number Publication Date
KR20070053094A KR20070053094A (ko) 2007-05-23
KR100778356B1 true KR100778356B1 (ko) 2007-11-22

Family

ID=38047775

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060087828A Expired - Fee Related KR100778356B1 (ko) 2005-11-18 2006-09-12 반도체 장치

Country Status (4)

Country Link
US (1) US20070114577A1 (enExample)
JP (1) JP2007142138A (enExample)
KR (1) KR100778356B1 (enExample)
DE (1) DE102006041575A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272583A (ja) * 2009-05-19 2010-12-02 Sanyo Shinku Kogyo Kk 電子部品素子
JP5589342B2 (ja) * 2009-10-19 2014-09-17 トヨタ自動車株式会社 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011249491A (ja) * 2010-05-26 2011-12-08 Mitsubishi Electric Corp 電力用半導体装置
JP5414644B2 (ja) 2010-09-29 2014-02-12 三菱電機株式会社 半導体装置
JP5777319B2 (ja) * 2010-10-27 2015-09-09 三菱電機株式会社 半導体装置
JP6063629B2 (ja) 2012-03-12 2017-01-18 ローム株式会社 半導体装置および半導体装置の製造方法
JP5686128B2 (ja) * 2012-11-29 2015-03-18 トヨタ自動車株式会社 半導体装置
CN105556661B (zh) 2013-09-19 2018-07-24 三菱电机株式会社 半导体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
JP6526981B2 (ja) 2015-02-13 2019-06-05 ローム株式会社 半導体装置および半導体モジュール
JP2017069569A (ja) * 2016-11-16 2017-04-06 三菱電機株式会社 半導体装置
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
JP6805776B2 (ja) * 2016-12-09 2020-12-23 富士電機株式会社 半導体装置
JP6897141B2 (ja) * 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
JP7167639B2 (ja) * 2018-11-07 2022-11-09 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7247681B2 (ja) * 2019-03-18 2023-03-29 富士電機株式会社 半導体組立体
CN111816652B (zh) * 2020-05-27 2024-07-16 华为技术有限公司 一种集成有温度传感器的igbt芯片
JP7001785B2 (ja) * 2020-10-02 2022-01-20 ローム株式会社 半導体装置および半導体モジュール
JP2021007182A (ja) * 2020-10-19 2021-01-21 三菱電機株式会社 半導体装置及びその製造方法
JP7160079B2 (ja) * 2020-12-03 2022-10-25 富士電機株式会社 半導体装置
JP7302715B2 (ja) * 2020-12-03 2023-07-04 富士電機株式会社 半導体装置
JP7105335B2 (ja) * 2021-03-18 2022-07-22 ローム株式会社 半導体装置
JP7680240B2 (ja) * 2021-03-30 2025-05-20 ローム株式会社 半導体装置
JP7718100B2 (ja) 2021-05-21 2025-08-05 富士電機株式会社 半導体モジュール
WO2023062781A1 (ja) * 2021-10-14 2023-04-20 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP7707885B2 (ja) * 2021-12-13 2025-07-15 三菱電機株式会社 半導体装置
JP7461534B2 (ja) * 2021-12-23 2024-04-03 ローム株式会社 半導体装置
DE102024126594A1 (de) 2024-09-16 2026-03-19 Infineon Technologies Ag Elektronische Komponente mit einer gestapelter Barrierestruktur, einer Zwischenstruktur aufweisend Nickel und einer Kupfer- und/oder Aluminiumstruktur

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040100997A (ko) * 2003-05-20 2004-12-02 가부시끼가이샤 르네사스 테크놀로지 반도체 장치 및 그 제조 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260236A (ja) * 1985-09-10 1987-03-16 Tdk Corp 縦形半導体装置およびその製造方法
JP2557898B2 (ja) * 1987-07-31 1996-11-27 株式会社東芝 半導体装置
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
JP3265894B2 (ja) * 1995-02-20 2002-03-18 富士電機株式会社 半導体装置
US5795833A (en) * 1996-08-01 1998-08-18 Taiwan Semiconductor Manufacturing Company, Ltd Method for fabricating passivation layers over metal lines
JPH10223624A (ja) * 1997-02-06 1998-08-21 Nec Yamagata Ltd 半導体装置の製造方法
JP2002090422A (ja) * 2000-09-13 2002-03-27 Toshiba Corp 半導体装置及びその製造方法
JP4932088B2 (ja) * 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP2002252351A (ja) * 2001-02-26 2002-09-06 Sanyo Electric Co Ltd 半導体装置
US20020163062A1 (en) * 2001-02-26 2002-11-07 International Business Machines Corporation Multiple material stacks with a stress relief layer between a metal structure and a passivation layer
JP3601529B2 (ja) * 2001-08-09 2004-12-15 株式会社デンソー 半導体装置
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
JP3673231B2 (ja) * 2002-03-07 2005-07-20 三菱電機株式会社 絶縁ゲート型半導体装置及びゲート配線構造の製造方法
JP2004111885A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
JP3750680B2 (ja) * 2003-10-10 2006-03-01 株式会社デンソー パッケージ型半導体装置
JP2005167075A (ja) * 2003-12-04 2005-06-23 Denso Corp 半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造
US8049338B2 (en) * 2006-04-07 2011-11-01 General Electric Company Power semiconductor module and fabrication method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040100997A (ko) * 2003-05-20 2004-12-02 가부시끼가이샤 르네사스 테크놀로지 반도체 장치 및 그 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
한국 특허공개공보 1020040100997호

Also Published As

Publication number Publication date
KR20070053094A (ko) 2007-05-23
US20070114577A1 (en) 2007-05-24
DE102006041575A1 (de) 2007-06-06
JP2007142138A (ja) 2007-06-07

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