JP2006054415A - 薄膜トランジスタ及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 175
- 239000010410 layer Substances 0.000 claims abstract description 124
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 76
- 239000003054 catalyst Substances 0.000 claims abstract description 72
- 238000001914 filtration Methods 0.000 claims abstract description 70
- 238000002425 crystallisation Methods 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000008025 crystallization Effects 0.000 abstract description 25
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 238000007715 excimer laser crystallization Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Abstract
【解決手段】 絶縁基板上に形成された半導体層、ゲート絶縁膜、ゲート電極、層間絶縁膜、ソース/ドレーン電極を含み、ゲート絶縁膜は1から20Åの厚さのフィルターリング酸化膜からなる薄膜トランジスタ及びその製造方法。金属触媒の拡散が困難なフィルターリング酸化膜を用いて結晶化に寄与する金属触媒の量を調節し、調節された金属触媒によって多結晶シリコン層の結晶粒の大きさを大きく形成し、多結晶シリコン層に残留する金属触媒の量を最小化して特性が優れた薄膜膜トランジスタを製造できる効果がある。
【選択図】 図3
Description
104 フィルターリング酸化膜
105 キャッピング膜
106 金属触媒層
107 第1熱処理
108 第2熱処理
Claims (26)
- 絶縁基板と、
前記基板上に形成された半導体層、ゲート絶縁膜、ゲート電極、層間絶縁膜及びソース/ドレーン電極と、を含み、
前記ゲート絶縁膜は、1乃至20Åの厚さのフィルターリング酸化膜からなることを特徴とする、薄膜トランジスタ。 - 前記ゲート絶縁膜は、シリコン酸化膜またはシリコン窒化膜の単層または複層をさらに含むことを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記半導体層は、SGS結晶化法で結晶化された多結晶シリコン層からなることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記フィルターリング酸化膜は、金属触媒の拡散をフィルターリングして所定の量を拡散させることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記フィルターリング酸化膜は、化学的気相蒸着法または物理的気相蒸着法で蒸着し、又はUV酸化法、熱酸化法、酸素プラズマ酸化法または自然酸化法で形成した酸化膜であることを特徴とする、 請求項1に記載の薄膜トランジスタ。
- 絶縁基板と、
前記基板上に形成された半導体層、ゲート絶縁膜、ゲート電極、層間絶縁膜及びソース/ドレーン電極と、を含み、
前記ゲート絶縁膜は、フィルターリング自然酸化膜からなることを特徴とする、薄膜トランジスタ。 - 前記ゲート絶縁膜は、シリコン酸化膜またはシリコン窒化膜の単層または複層をさらに含むことを特徴とする、 請求項6に記載の薄膜トランジスタ。
- 前記半導体層は、SGS結晶化法で結晶化された多結晶シリコン層からなることを特徴とする、請求項6に記載の薄膜トランジスタ。
- 前記フィルターリング自然酸化膜は、金属触媒の拡散をフィルターリングして所定の量を拡散させることを特徴とする、 請求項6に記載の薄膜トランジスタ。
- 前記フィルターリング自然酸化膜は、前記シリコン層の表面が大気または真空状態に露出されることによって、自然的に発生した酸化膜であることを特徴とする、請求項6に記載の薄膜トランジスタ。
- 絶縁基板を準備するステップと、
前記基板上に非晶質シリコン層を形成するステップと、
前記非晶質シリコン層上にフィルターリング酸化膜及びキャッピング膜を形成するステップと、
前記キャッピング膜上に金属触媒を蒸着するステップと、
前記基板を第1熱処理して金属触媒を前記キャッピング膜及びフィルターリング酸化膜を介して拡散させる、フィルターリング酸化膜と非晶質シリコン層の界面へ移動させるステップと、
前記基板を第2熱処理して拡散された金属触媒により非晶質シリコン層を多結晶シリコン層に結晶化するステップと、
前記キャッピング膜を除去するステップと、
前記フィルターリング酸化膜及び多結晶シリコン層をパターニングして半導体層を形成するステップと、
前記基板上にゲート絶縁膜を形成するステップと、
前記基板上にゲート電極を形成し、層間絶縁膜及びソース/ドレーン電極を形成するステップと、を含むことを特徴とする、薄膜トランジスタの製造方法。 - 前記フィルターリング酸化膜は、熱酸化膜または自然酸化膜であることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記フィルターリング酸化膜は、1乃至20Åの厚さで形成することを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記キャッピング膜は、1乃至2000Åの厚さで形成することを特徴とする、 請求項11に記載の薄膜トランジスタの製造方法。
- 前記キャッピング膜は、シリコン窒化膜で形成することを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記ゲート絶縁膜を形成するステップは、前記フィルターリング酸化膜のパターンが形成された基板上に酸化膜または窒化膜からなる単層または複層を形成するステップであることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記第1熱処理は、200乃至800℃の温度範囲で熱処理することを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記第2熱処理は、400乃至1300℃の温度範囲で熱処理することを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記第1熱処理または第2熱処理は、炉工程、RTA工程、UV工程またはレーザー工程のうち、いずれかの一つ以上の工程を用いることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記金属触媒は、Ni、Pd、Ti、Ag、Au、Al、Sn、Sb、Cu、Co、Mo、Tr、Ru、Rh、CdまたはPtのうち、いずれかの一つ以上であることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記基板を第2熱処理して拡散された金属触媒により非晶質シリコン層を多結晶シリコン層に結晶化するステップは、前記拡散された金属触媒が金属シリサイドを形成し、前記金属シリサイドにより前記非晶質シリコン層が多結晶シリコン層に結晶化するステップであることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記結晶化するステップは、前記金属シリサイドが結晶核として用いられ、前記金属シリサイドから多結晶シリコンが側面成長して結晶化するステップであることを特徴とする、請求項21に記載の薄膜トランジスタの製造方法。
- 前記フィルターリング酸化膜は、金属触媒の拡散を妨害して所定の微量のみがフィルターリング酸化膜と非晶質シリコン層の界面に拡散するようにすることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記フィルターリング酸化膜は、酸素プラズマを用いて100乃至1000Wのパワー、10乃至1000秒の時間、70乃至400Paの圧力で形成し、または酸素を含む大気や真空の中に露出させることによって形成することを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記第1熱処理をするステップまたは第2熱処理をするステップ以後、前記金属触媒層及びキャッピング膜を除去する工程をさらに含むことを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記第1熱処理をするステップ以後に前記金属触媒層を除去し、前記第2熱処理をするステップ以後に前記キャッピング膜を除去する工程をさらに含むことを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
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JP2009004770A (ja) * | 2007-06-19 | 2009-01-08 | Samsung Sdi Co Ltd | 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 |
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CN109830526A (zh) * | 2019-02-27 | 2019-05-31 | 中山汉臣电子科技有限公司 | 一种功率半导体器件及其制备方法 |
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JPH07226374A (ja) * | 1994-02-10 | 1995-08-22 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
JPH0864545A (ja) * | 1994-08-26 | 1996-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製装置および半導体装置の作製方法 |
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JP2007311761A (ja) * | 2006-05-18 | 2007-11-29 | Samsung Sdi Co Ltd | 薄膜トランジスタの製造方法 |
US8174012B2 (en) | 2006-11-10 | 2012-05-08 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
JP2008166698A (ja) * | 2006-12-29 | 2008-07-17 | Samsung Sdi Co Ltd | トランジスタ、トランジスタの製造方法及び平板表示装置 |
JP2009004770A (ja) * | 2007-06-19 | 2009-01-08 | Samsung Sdi Co Ltd | 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 |
US7825476B2 (en) | 2007-06-19 | 2010-11-02 | Samsung Mobile Display Co., Ltd. | Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
US8445336B2 (en) | 2007-06-19 | 2013-05-21 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
KR101049802B1 (ko) * | 2009-11-20 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법 |
US9070717B2 (en) | 2009-11-20 | 2015-06-30 | Samsung Display Co., Ltd. | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same |
US9576797B2 (en) | 2009-11-20 | 2017-02-21 | Samsung Display Co., Ltd. | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same |
Also Published As
Publication number | Publication date |
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KR20060015195A (ko) | 2006-02-16 |
US7452762B2 (en) | 2008-11-18 |
KR100656495B1 (ko) | 2006-12-11 |
US7375396B2 (en) | 2008-05-20 |
US20070141767A1 (en) | 2007-06-21 |
CN1734788A (zh) | 2006-02-15 |
CN1734788B (zh) | 2010-11-17 |
JP4115990B2 (ja) | 2008-07-09 |
US20060033107A1 (en) | 2006-02-16 |
JP2008153679A (ja) | 2008-07-03 |
JP4355016B2 (ja) | 2009-10-28 |
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