JP2009295996A - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
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- JP2009295996A JP2009295996A JP2009185138A JP2009185138A JP2009295996A JP 2009295996 A JP2009295996 A JP 2009295996A JP 2009185138 A JP2009185138 A JP 2009185138A JP 2009185138 A JP2009185138 A JP 2009185138A JP 2009295996 A JP2009295996 A JP 2009295996A
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000003054 catalyst Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 229920001296 polysiloxane Polymers 0.000 claims description 58
- 239000010408 film Substances 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 35
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 18
- 230000008025 crystallization Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】本発明の薄膜トランジスタは基板上に形成された金属触媒層、金属触媒層上に次々と形成された第1キャッピング層及び第2キャッピング層パターンを含む。製造方法は金属触媒層上に第1キャッピング層を形成する。第1キャッピング層上に第2キャッピング層を形成してパターニングする。パターニングされた第2キャッピング層上に非晶質シリコーン層を形成する。金属触媒を拡散させる。非晶質シリコーン層を結晶化して多結晶シリコーン層を形成する段階を含む。
【選択図】図3E
Description
11、31:金属触媒
12、32:第1キャッピング層
13、33:第2キャッピング層パターン
14:半導体層パターン
15:ソース領域
16:ドレイン領域
17:チャネル層
21、41:第1キャッピング層パターン
22、42:第2キャッピング層
34:非晶質シリコーン層
35:シード
36:多結晶シリコーン層
37:チャネル形成部
Claims (14)
- 基板と;
前記基板上に形成された金属触媒層と;
前記金属触媒層上に形成された第1キャッピング層と;
前記第1キャッピング層上に形成された第2キャッピング層パターンと;及び
前記第2キャッピング層パターン上に形成される半導体層パターンを含み、
前記金属触媒層の金属触媒は前記第1キャッピング層を通過して非晶質シリコーン層に拡散され、
前記第2キャッピング層パターンは前記非晶質シリコーン層への前記金属触媒層の金属触媒の拡散を防止することを特徴とする薄膜トランジスタ。 - 前記第1キャッピング層はシリコーン窒化膜またはシリコーン酸化膜で構成されることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2キャッピング層パターンはシリコーン窒化膜またはシリコーン酸化膜で構成されることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2キャッピング層パターンの厚さが第1キャッピング層の厚さより厚いことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2キャッピング層パターンの密度が第1キャッピング層の密度より大きいことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2キャッピング層パターン間の間隔は1ないし50μmであることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記金属触媒はニッケルであることを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板と;
前記基板上に形成された金属触媒層と;
前記金属触媒層上に形成された第1キャッピング層パターンと;
前記第1キャッピング層パターン上に形成された第2キャッピング層;及び
前記第2キャッピング層上に形成される半導体層パターンを含み、
前記金属触媒層の金属触媒は前記第2キャッピング層を通過して非晶質シリコーン層に拡散され、
前記第1キャッピング層パターンは前記非晶質シリコーン層への前記金属触媒層の金属触媒の拡散を防止することを特徴とする薄膜トランジスタ。 - 前記第1キャッピング層パターンはシリコーン窒化膜またはシリコーン酸化膜で構成されることを特徴とする請求項8に記載の薄膜トランジスタ。
- 前記第2キャッピング層はシリコーン窒化膜またはシリコーン酸化膜で構成されることを特徴とする請求項8に記載の薄膜トランジスタ。
- 前記第1キャッピング層パターンの厚さが第2キャッピング層の厚さより厚いことを特徴とする請求項8に記載の薄膜トランジスタ。
- 前記第1キャッピング層パターンの密度が第2キャッピング層の密度より大きいことを特徴とする請求項8に記載の薄膜トランジスタ。
- 前記第1キャッピング層パターン間の間隔は1ないし50μmであることを特徴とする請求項8に記載の薄膜トランジスタ。
- 前記金属触媒はニッケルであることを特徴とする請求項8に記載の薄膜トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040042348A KR100600874B1 (ko) | 2004-06-09 | 2004-06-09 | 박막트랜지스터 및 그의 제조 방법 |
KR2004-042348 | 2004-06-09 |
Related Parent Applications (1)
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JP2004377848A Division JP4549842B2 (ja) | 2004-06-09 | 2004-12-27 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009295996A true JP2009295996A (ja) | 2009-12-17 |
JP5021005B2 JP5021005B2 (ja) | 2012-09-05 |
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JP2004377848A Active JP4549842B2 (ja) | 2004-06-09 | 2004-12-27 | 薄膜トランジスタの製造方法 |
JP2009185138A Active JP5021005B2 (ja) | 2004-06-09 | 2009-08-07 | 薄膜トランジスタ |
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JP2004377848A Active JP4549842B2 (ja) | 2004-06-09 | 2004-12-27 | 薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
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US (2) | US7943929B2 (ja) |
JP (2) | JP4549842B2 (ja) |
KR (1) | KR100600874B1 (ja) |
CN (1) | CN100401531C (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100611154B1 (ko) * | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | 금속 유도 결정화 방법을 이용한 박막 트랜지스터, 이의제조 방법 및 이를 사용하는 액티브 매트릭스 평판 표시장치 |
KR100731756B1 (ko) * | 2006-06-07 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR101015849B1 (ko) * | 2009-03-03 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
KR101041141B1 (ko) * | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101049799B1 (ko) * | 2009-03-03 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
KR101049801B1 (ko) * | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
KR20100100187A (ko) * | 2009-03-05 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 |
KR101056428B1 (ko) * | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
KR101094295B1 (ko) * | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 |
KR101049802B1 (ko) | 2009-11-20 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법 |
KR101094302B1 (ko) | 2010-06-03 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101146995B1 (ko) | 2010-06-16 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 형성 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
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CN100401531C (zh) | 2008-07-09 |
US20050275019A1 (en) | 2005-12-15 |
JP4549842B2 (ja) | 2010-09-22 |
JP2005354028A (ja) | 2005-12-22 |
KR100600874B1 (ko) | 2006-07-14 |
CN1707810A (zh) | 2005-12-14 |
US7943929B2 (en) | 2011-05-17 |
US7989326B2 (en) | 2011-08-02 |
US20060263951A1 (en) | 2006-11-23 |
JP5021005B2 (ja) | 2012-09-05 |
KR20050117133A (ko) | 2005-12-14 |
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