JP2005531157A - 生産性を向上するプラズマ反応器用溶射イットリア含有被膜 - Google Patents

生産性を向上するプラズマ反応器用溶射イットリア含有被膜 Download PDF

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Publication number
JP2005531157A
JP2005531157A JP2004517642A JP2004517642A JP2005531157A JP 2005531157 A JP2005531157 A JP 2005531157A JP 2004517642 A JP2004517642 A JP 2004517642A JP 2004517642 A JP2004517642 A JP 2004517642A JP 2005531157 A JP2005531157 A JP 2005531157A
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Prior art keywords
coating
plasma
component
yttria
alloy
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Japanese (ja)
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JP2005531157A5 (zh:
Inventor
ロバート， ジェイ． オドネル，
ジョン， イー． ダグエルティー，
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Lam Research Corp
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Lam Research Corp
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Publication of JP2005531157A5 publication Critical patent/JP2005531157A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Plasma Technology (AREA)
JP2004517642A 2002-06-27 2003-06-12 生産性を向上するプラズマ反応器用溶射イットリア含有被膜 Pending JP2005531157A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/180,504 US7311797B2 (en) 2002-06-27 2002-06-27 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
PCT/US2003/018502 WO2004003962A2 (en) 2002-06-27 2003-06-12 Thermal sprayed yttria-containing coating for plasma reactor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010153473A Division JP2010283361A (ja) 2002-06-27 2010-07-05 生産性を向上するプラズマ反応器用溶射イットリア含有被膜

Publications (2)

Publication Number Publication Date
JP2005531157A true JP2005531157A (ja) 2005-10-13
JP2005531157A5 JP2005531157A5 (zh:) 2006-08-03

Family

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Family Applications (2)

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JP2004517642A Pending JP2005531157A (ja) 2002-06-27 2003-06-12 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
JP2010153473A Pending JP2010283361A (ja) 2002-06-27 2010-07-05 生産性を向上するプラズマ反応器用溶射イットリア含有被膜

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JP2010153473A Pending JP2010283361A (ja) 2002-06-27 2010-07-05 生産性を向上するプラズマ反応器用溶射イットリア含有被膜

Country Status (9)

Country Link
US (2) US7311797B2 (zh:)
EP (1) EP1518255B1 (zh:)
JP (2) JP2005531157A (zh:)
KR (2) KR101107542B1 (zh:)
CN (1) CN1663017A (zh:)
AT (1) ATE545148T1 (zh:)
AU (1) AU2003238006A1 (zh:)
TW (1) TWI328411B (zh:)
WO (1) WO2004003962A2 (zh:)

Cited By (19)

* Cited by examiner, † Cited by third party
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JP2007227443A (ja) * 2006-02-21 2007-09-06 Hitachi High-Technologies Corp プラズマエッチング装置及びプラズマ処理室内壁の形成方法
WO2007111058A1 (ja) * 2006-03-27 2007-10-04 Tohoku University プラズマ処理装置用部材およびその製造方法
WO2008140012A1 (ja) * 2007-05-11 2008-11-20 Ulvac, Inc. ドライエッチング装置及びドライエッチング方法
JP2010106319A (ja) * 2008-10-30 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2010106317A (ja) * 2008-10-30 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2010254525A (ja) * 2009-04-24 2010-11-11 Tohoku Univ 水分発生用反応炉
JP2012060101A (ja) * 2010-08-12 2012-03-22 Toshiba Corp ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
JP2013084997A (ja) * 2010-08-12 2013-05-09 Toshiba Corp ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
JP2014194080A (ja) * 2013-03-27 2014-10-09 Lam Research Corporation プラズマ処理チャンバの高密度酸化物コーティングされた構成要素およびその製造方法
JP2014235814A (ja) * 2013-05-31 2014-12-15 株式会社Ｓｅｎ 絶縁構造及び絶縁方法
JP2016028379A (ja) * 2014-07-10 2016-02-25 東京エレクトロン株式会社 プラズマ処理装置用の部品、プラズマ処理装置、及びプラズマ処理装置用の部品の製造方法
JP2016143803A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2016540889A (ja) * 2013-11-21 2016-12-28 インテグリス・インコーポレーテッド プラズマシステム中に使用されるチャンバー部品用の表面コーティング
JP2017092448A (ja) * 2015-08-18 2017-05-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ウエハの極縁における特徴プロフィールの傾斜を改善するためのエッジリングアセンブリ
JP2019153789A (ja) * 2018-03-02 2019-09-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 保護皮膜を備える石英部品
JP2020516072A (ja) * 2017-03-31 2020-05-28 マトソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 処理チャンバにおける工作物における材料堆積防止
JP2020080412A (ja) * 2014-04-25 2020-05-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温アプリケーション用プラズマ耐食性薄膜コーティング
JP2020141128A (ja) * 2019-02-27 2020-09-03 Toto株式会社 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置
US12051568B2 (en) 2019-02-27 2024-07-30 Toto Ltd. Semiconductor manufacturing apparatus

Families Citing this family (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7416625B2 (en) * 2001-03-29 2008-08-26 Bridgestone Corporation Rubber strip, method for manufacturing tire and tire component member using same, and apparatus therefor
US7371467B2 (en) * 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
DE602004009982T2 (de) * 2003-03-31 2008-09-18 Sanyo Electric Co., Ltd., Moriguchi Metallschablone und Verfahren zum Drucken von bleifreier Lötpaste mit derselben
WO2004095530A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited Adjoining adjacent coatings on an element
JP4532479B2 (ja) 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US6843870B1 (en) * 2003-07-22 2005-01-18 Epic Biosonics Inc. Implantable electrical cable and method of making
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US8213467B2 (en) 2004-04-08 2012-07-03 Sonosite, Inc. Systems and methods providing ASICs for use in multiple applications
CN1690254B (zh) * 2004-04-13 2013-03-13 应用材料有限公司 具有含电镀钇涂层的制程腔室构件
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
US8017062B2 (en) * 2004-08-24 2011-09-13 Yeshwanth Narendar Semiconductor processing components and semiconductor processing utilizing same
JP2006186306A (ja) * 2004-09-30 2006-07-13 Toshiba Ceramics Co Ltd ガス拡散プレートおよびその製造方法
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
WO2006064898A1 (ja) * 2004-12-17 2006-06-22 Tokyo Electron Limited プラズマ処理装置
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
CN101218376A (zh) * 2005-06-17 2008-07-09 国立大学法人东北大学 金属构件的保护膜构造及采用该保护膜构造的金属零件、半导体或平板显示器制造装置
US20090194233A1 (en) * 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
JP4813115B2 (ja) * 2005-07-14 2011-11-09 国立大学法人東北大学 半導体製造装置用部材及びその洗浄方法
US7976641B1 (en) * 2005-09-30 2011-07-12 Lam Research Corporation Extending storage time of removed plasma chamber components prior to cleaning thereof
CN101305451B (zh) * 2005-11-08 2012-07-04 国立大学法人东北大学 簇射极板及采用该簇射极板的等离子体处理装置
US20070108161A1 (en) * 2005-11-17 2007-05-17 Applied Materials, Inc. Chamber components with polymer coatings and methods of manufacture
US20070215278A1 (en) * 2006-03-06 2007-09-20 Muneo Furuse Plasma etching apparatus and method for forming inner wall of plasma processing chamber
US7906032B2 (en) * 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7655328B2 (en) * 2006-04-20 2010-02-02 Shin-Etsu Chemical Co., Ltd. Conductive, plasma-resistant member
US20070246795A1 (en) * 2006-04-20 2007-10-25 Micron Technology, Inc. Dual depth shallow trench isolation and methods to form same
US7884026B2 (en) * 2006-07-20 2011-02-08 United Microelectronics Corp. Method of fabricating dual damascene structure
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
CN101123214B (zh) * 2006-08-07 2011-03-16 联华电子股份有限公司 双镶嵌结构的制作方法
JPWO2008032627A1 (ja) * 2006-09-11 2010-01-21 株式会社アルバック ドライエッチング方法
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8097105B2 (en) * 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
US20080196661A1 (en) * 2007-02-20 2008-08-21 Brian West Plasma sprayed deposition ring isolator
US7718559B2 (en) * 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
CN101889329B (zh) * 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
US8129029B2 (en) * 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US20090214825A1 (en) * 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
JP2009212293A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 基板処理装置用の部品及び基板処理装置
US20090261065A1 (en) * 2008-04-18 2009-10-22 Lam Research Corporation Components for use in a plasma chamber having reduced particle generation and method of making
US8120137B2 (en) * 2008-05-08 2012-02-21 Micron Technology, Inc. Isolation trench structure
CN101577211B (zh) * 2008-05-09 2011-07-20 中微半导体设备(上海)有限公司 抗等离子体腐蚀的反应室部件、其制造方法以及包含该部件的等离子体反应室
US8206829B2 (en) * 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
TWI456679B (zh) * 2009-03-27 2014-10-11 Advanced Micro Fab Equip Inc 抗電漿腐蝕之反應室部件、其製造方法以及包含該部件之電漿反應室
KR20120090996A (ko) * 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
CN102296263B (zh) * 2010-06-25 2013-04-24 中国科学院微电子研究所 等离子体刻蚀工艺腔室内表面的改性处理方法
KR101487342B1 (ko) 2010-07-30 2015-01-30 주식회사 잉크테크 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
CN102456564A (zh) * 2010-10-29 2012-05-16 中芯国际集成电路制造(上海)有限公司 用于刻蚀腔的变压耦合式等离子体窗及包括其的刻蚀腔
DE202011002844U1 (de) 2011-02-17 2011-06-09 LAM RESEARCH CORPORATION (Delaware Corporation), California Erweiterungselektrode einer Plasmaschrägkantenätzvorrichtung
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
SG2014008239A (en) * 2011-08-10 2014-03-28 Entegris Inc Aion coated substrate with optional yttria overlayer
US20130102156A1 (en) * 2011-10-21 2013-04-25 Lam Research Corporation Components of plasma processing chambers having textured plasma resistant coatings
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
CN104379260B (zh) * 2012-05-10 2016-08-24 康涅狄格州大学 用于制造催化剂薄膜的方法和设备
KR101637801B1 (ko) * 2012-05-22 2016-07-07 가부시끼가이샤 도시바 플라즈마 처리 장치용 부품 및 플라즈마 처리 장치용 부품의 제조 방법
KR101466967B1 (ko) 2012-06-13 2014-12-15 한국과학기술연구원 내식성이 향상된 다성분계 열용사용 코팅물질, 그 제조방법 및 코팅방법
US20140007901A1 (en) * 2012-07-06 2014-01-09 Jack Chen Methods and apparatus for bevel edge cleaning in a plasma processing system
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) * 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
CN103794458B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US9385018B2 (en) 2013-01-07 2016-07-05 Samsung Austin Semiconductor, L.P. Semiconductor manufacturing equipment with trace elements for improved defect tracing and methods of manufacture
KR102094304B1 (ko) * 2013-02-05 2020-03-30 (주) 코미코 표면 처리 방법 및 이를 이용한 세라믹 구조물
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9637415B2 (en) 2013-10-24 2017-05-02 Surmet Corporation Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
US20150126036A1 (en) * 2013-11-05 2015-05-07 Tokyo Electron Limited Controlling etch rate drift and particles during plasma processing
US20230386795A1 (en) * 2013-11-21 2023-11-30 Entegris, Inc. Surface coating for chamber components used in plasma systems
CN104701125A (zh) * 2013-12-05 2015-06-10 中微半导体设备(上海)有限公司 气体分布板
US9873940B2 (en) * 2013-12-31 2018-01-23 Lam Research Corporation Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) * 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
KR101465640B1 (ko) * 2014-08-08 2014-11-28 주식회사 펨빅스 불화알루미늄 생성방지막이 형성된 ｃｖｄ 공정챔버 부품
US10403535B2 (en) * 2014-08-15 2019-09-03 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) * 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
TWI683888B (zh) 2015-03-18 2020-02-01 美商恩特葛瑞斯股份有限公司 塗佈有經氟退火膜之物品
KR102376982B1 (ko) * 2015-04-14 2022-03-21 삼성전자주식회사 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치
KR20160124992A (ko) * 2015-04-20 2016-10-31 삼성전자주식회사 기판 제조 장치, 및 그의 세라믹 박막 코팅 방법
KR102447682B1 (ko) 2015-05-29 2022-09-27 삼성전자주식회사 코팅층 형성 방법, 플라즈마 처리 장치 및 패턴 형성 방법
US20160358749A1 (en) * 2015-06-04 2016-12-08 Lam Research Corporation Plasma etching device with plasma etch resistant coating
KR20170006807A (ko) 2015-07-09 2017-01-18 (주)티티에스 공정 챔버의 부품파트 및 화학기상증착에 의해 이트리아를 부품파트에 증착하는 방법
KR20170015615A (ko) * 2015-07-29 2017-02-09 삼성전자주식회사 플라즈마 처리 장치
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6573820B2 (ja) 2015-11-09 2019-09-11 東京エレクトロン株式会社 プラズマ処理装置用部材及びプラズマ処理装置
EP3377318A1 (en) 2015-11-16 2018-09-26 Coorstek Inc. Corrosion-resistant components and methods of making
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
KR102504290B1 (ko) * 2015-12-04 2023-02-28 삼성전자 주식회사 수소 플라스마 어닐링 처리 준비 방법, 수소 플라스마 어닐링 처리 방법, 및 수소 플라스마 어닐링 장치
US10488397B2 (en) 2016-04-05 2019-11-26 University Of Connecticut Metal oxide based sensors for sensing low concentration of specific gases prepared by a flame based process
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6908973B2 (ja) * 2016-06-08 2021-07-28 三菱重工業株式会社 遮熱コーティング、タービン部材、ガスタービン、ならびに遮熱コーティングの製造方法
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
KR101885570B1 (ko) * 2016-07-05 2018-08-07 세메스 주식회사 윈도우 부재, 그 제조 방법, 및 그를 포함하는 기판 처리 장치
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
EP3560906B1 (en) * 2016-11-16 2024-02-21 Coorstek Inc. Corrosion-resistant components and methods of making
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
KR101877017B1 (ko) * 2017-01-09 2018-07-12 한국과학기술연구원 반도체 반응기 및 반도체 반응기용 금속모재의 코팅층 형성방법
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
CN110997972B (zh) * 2017-07-31 2022-07-26 京瓷株式会社 部件及半导体制造装置
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
WO2019044850A1 (ja) * 2017-09-01 2019-03-07 学校法人 芝浦工業大学 部品および半導体製造装置
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
EP4578991A2 (en) * 2018-01-08 2025-07-02 LAM Research Corporation Components and processes for managing plasma process byproduct materials
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11139151B1 (en) * 2018-03-15 2021-10-05 Intel Corporation Micro-surface morphological matching for reactor components
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
CN112236839B (zh) * 2018-06-14 2025-01-03 应用材料公司 具保护性涂层的处理腔室的处理配件
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
WO2020116384A1 (ja) * 2018-12-05 2020-06-11 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR102647177B1 (ko) 2019-02-11 2024-03-15 삼성전자주식회사 플라즈마 처리 장치
JP2020141123A (ja) 2019-02-27 2020-09-03 Toto株式会社 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置
WO2020180502A1 (en) * 2019-03-01 2020-09-10 Lam Research Corporation Surface coating for aluminum plasma processing chamber components
WO2020180853A1 (en) * 2019-03-05 2020-09-10 Lam Research Corporation Laminated aerosol deposition coating for aluminum components for plasma processing chambers
CN112017932B (zh) * 2019-05-31 2022-11-29 中微半导体设备(上海)股份有限公司 等离子体处理装置中气体输送系统的耐腐蚀结构
KR102758729B1 (ko) * 2019-07-24 2025-01-22 삼성전자주식회사 기판 처리장치 및 이를 구비하는 기판 처리 시스템
US12359313B2 (en) * 2019-07-31 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition apparatus and method of forming metal oxide layer using the same
US20220277936A1 (en) * 2019-08-09 2022-09-01 Applied Materials, Inc. Protective multilayer coating for processing chamber components
CN112713072B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体处理腔室内部部件及其制造方法
KR102225604B1 (ko) * 2019-12-18 2021-03-10 피에스케이 주식회사 기판 처리 장치
WO2021150757A1 (en) * 2020-01-23 2021-07-29 Lam Research Corporation Yttrium aluminum coating for plasma processing chamber components
US11661650B2 (en) 2020-04-10 2023-05-30 Applied Materials, Inc. Yttrium oxide based coating composition
US11881385B2 (en) * 2020-04-24 2024-01-23 Applied Materials, Inc. Methods and apparatus for reducing defects in preclean chambers
CN113802094B (zh) * 2020-06-16 2024-04-05 中微半导体设备(上海)股份有限公司 耐腐蚀涂层的镀膜方法及等离子体刻蚀零部件和反应装置
JP7409976B2 (ja) * 2020-06-22 2024-01-09 東京エレクトロン株式会社 プラズマ処理システム、プラズマ処理装置及びエッジリングの交換方法
US20220013336A1 (en) * 2020-07-10 2022-01-13 Applied Materials, Inc. Process kit with protective ceramic coatings for hydrogen and nh3 plasma application
KR20230043198A (ko) * 2020-07-30 2023-03-30 램 리써치 코포레이션 저온 플루오르화를 갖는 금속 옥사이드
US20220037126A1 (en) * 2020-08-03 2022-02-03 Applied Materials, Inc. Fluoride coating to improve chamber performance
WO2022060688A1 (en) * 2020-09-21 2022-03-24 Lam Research Corporation Carrier ring for floating tcp chamber gas plate
KR102496309B1 (ko) 2020-09-25 2023-02-07 한국과학기술연구원 레이저를 이용한 내플라즈마 코팅막 형성방법
KR102497053B1 (ko) 2020-09-25 2023-02-08 한국과학기술연구원 레이저 소결을 이용한 내플라즈마 코팅막 치밀화 방법
JP7537846B2 (ja) * 2021-02-02 2024-08-21 東京エレクトロン株式会社 処理容器とプラズマ処理装置、及び処理容器の製造方法
US20220341018A1 (en) * 2021-04-21 2022-10-27 Toto Ltd. Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus
US20230366074A1 (en) * 2022-05-16 2023-11-16 Andrei V. Ivanov Oxygen Interception for Air Plasma Spray Processes
KR20250099346A (ko) * 2022-10-31 2025-07-01 램 리써치 코포레이션 반도체 프로세싱 챔버를 위한 내화성 구성요소
KR102765265B1 (ko) * 2022-12-28 2025-02-06 한국핵융합에너지연구원 유체 이송되는 폐가스를 분해처리 하기 위한 고밀도 마이크로파 플라즈마 장치
KR20250003337A (ko) 2023-06-30 2025-01-07 주식회사 케이에스엠컴포넌트 코어/쉘 구조 재료 및 이를 이용한 반도체 제조 장치용 세라믹 부재
CN117265480B (zh) * 2023-10-31 2024-05-10 华南理工大学 一种低粗糙度氧化钇涂层的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07216589A (ja) * 1994-02-03 1995-08-15 Tokyo Electron Ltd 表面処理方法およびプラズマ処理装置
JP2002033309A (ja) * 2000-07-18 2002-01-31 Hitachi Ltd プラズマ処理装置及び該装置用部品の製作方法
JP2002080270A (ja) * 2000-06-30 2002-03-19 Kyocera Corp 耐食性部材
WO2002029877A1 (fr) * 2000-10-02 2002-04-11 Tokyo Electron Limited Dispositif de traitement par depression

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961111A (en) * 1975-03-18 1976-06-01 Pennwalt Corporation Method of increasing corrosion resistance of anodized aluminum
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH03287797A (ja) * 1990-04-03 1991-12-18 Sumitomo Electric Ind Ltd 耐食部材
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
DE9421671U1 (de) 1994-08-26 1996-07-11 Siemens AG, 80333 München Entladungskammer für eine Plasmaätzanlage in der Halbleiterfertigung
JP3164200B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6048798A (en) * 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5916454A (en) * 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
KR100296692B1 (ko) * 1996-09-10 2001-10-24 사토 도리 플라즈마cvd장치
US6152070A (en) * 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6388226B1 (en) * 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6227140B1 (en) * 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP2001250814A (ja) * 2000-03-06 2001-09-14 Hitachi Ltd プラズマ処理装置
TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6645585B2 (en) * 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07216589A (ja) * 1994-02-03 1995-08-15 Tokyo Electron Ltd 表面処理方法およびプラズマ処理装置
JP2002080270A (ja) * 2000-06-30 2002-03-19 Kyocera Corp 耐食性部材
JP2002033309A (ja) * 2000-07-18 2002-01-31 Hitachi Ltd プラズマ処理装置及び該装置用部品の製作方法
WO2002029877A1 (fr) * 2000-10-02 2002-04-11 Tokyo Electron Limited Dispositif de traitement par depression

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227443A (ja) * 2006-02-21 2007-09-06 Hitachi High-Technologies Corp プラズマエッチング装置及びプラズマ処理室内壁の形成方法
WO2007111058A1 (ja) * 2006-03-27 2007-10-04 Tohoku University プラズマ処理装置用部材およびその製造方法
JP2007258634A (ja) * 2006-03-27 2007-10-04 Tohoku Univ プラズマ処理装置用部材およびその製造方法
JPWO2008140012A1 (ja) * 2007-05-11 2010-08-05 株式会社アルバック ドライエッチング装置及びドライエッチング方法
WO2008140012A1 (ja) * 2007-05-11 2008-11-20 Ulvac, Inc. ドライエッチング装置及びドライエッチング方法
JP2010106319A (ja) * 2008-10-30 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2010106317A (ja) * 2008-10-30 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2010254525A (ja) * 2009-04-24 2010-11-11 Tohoku Univ 水分発生用反応炉
JP2012060101A (ja) * 2010-08-12 2012-03-22 Toshiba Corp ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
JP2013084997A (ja) * 2010-08-12 2013-05-09 Toshiba Corp ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
JP2014194080A (ja) * 2013-03-27 2014-10-09 Lam Research Corporation プラズマ処理チャンバの高密度酸化物コーティングされた構成要素およびその製造方法
JP2014235814A (ja) * 2013-05-31 2014-12-15 株式会社Ｓｅｎ 絶縁構造及び絶縁方法
JP2016540889A (ja) * 2013-11-21 2016-12-28 インテグリス・インコーポレーテッド プラズマシステム中に使用されるチャンバー部品用の表面コーティング
JP2020080412A (ja) * 2014-04-25 2020-05-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温アプリケーション用プラズマ耐食性薄膜コーティング
JP7175289B2 (ja) 2014-04-25 2022-11-18 アプライド マテリアルズ インコーポレイテッド 高温アプリケーション用プラズマ耐食性薄膜コーティング
US10808309B2 (en) 2014-07-10 2020-10-20 Tokyo Electron Limited Component for use in plasma processing apparatus, plasma processing apparatus, and method for manufacturing the component
US11473182B2 (en) 2014-07-10 2022-10-18 Tokyo Electron Limited Component for use in plasma processing apparatus, plasma processing apparatus, and method for manufacturing the component
JP2016028379A (ja) * 2014-07-10 2016-02-25 東京エレクトロン株式会社 プラズマ処理装置用の部品、プラズマ処理装置、及びプラズマ処理装置用の部品の製造方法
JP2016143803A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017092448A (ja) * 2015-08-18 2017-05-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ウエハの極縁における特徴プロフィールの傾斜を改善するためのエッジリングアセンブリ
US11251026B2 (en) 2017-03-31 2022-02-15 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
JP2020516072A (ja) * 2017-03-31 2020-05-28 マトソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 処理チャンバにおける工作物における材料堆積防止
JP2019153789A (ja) * 2018-03-02 2019-09-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 保護皮膜を備える石英部品
KR20200104811A (ko) * 2019-02-27 2020-09-04 토토 가부시키가이샤 반도체 제조 장치용 부재, 및 반도체 제조 장치용 부재를 구비한 반도체 제조 장치, 및 디스플레이 제조 장치
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JP2020141128A (ja) * 2019-02-27 2020-09-03 Toto株式会社 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置
US12051568B2 (en) 2019-02-27 2024-07-30 Toto Ltd. Semiconductor manufacturing apparatus

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US20040002221A1 (en) 2004-01-01
WO2004003962A2 (en) 2004-01-08
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EP1518255B1 (en) 2012-02-08
US7300537B2 (en) 2007-11-27
KR101107542B1 (ko) 2012-02-08
WO2004003962A3 (en) 2004-04-01
EP1518255A2 (en) 2005-03-30
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