JP2019153789A - 保護皮膜を備える石英部品 - Google Patents
保護皮膜を備える石英部品 Download PDFInfo
- Publication number
- JP2019153789A JP2019153789A JP2019037234A JP2019037234A JP2019153789A JP 2019153789 A JP2019153789 A JP 2019153789A JP 2019037234 A JP2019037234 A JP 2019037234A JP 2019037234 A JP2019037234 A JP 2019037234A JP 2019153789 A JP2019153789 A JP 2019153789A
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- Prior art keywords
- quartz
- plasma reactor
- plasma
- protective layer
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 294
- 239000010453 quartz Substances 0.000 title claims abstract description 286
- 239000011253 protective coating Substances 0.000 title abstract 2
- 239000011241 protective layer Substances 0.000 claims abstract description 111
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 230000008859 change Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 77
- 239000007789 gas Substances 0.000 claims description 46
- 238000012545 processing Methods 0.000 claims description 27
- 238000000231 atomic layer deposition Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000007788 roughening Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 210
- 210000002381 plasma Anatomy 0.000 description 169
- 230000008569 process Effects 0.000 description 53
- 235000012431 wafers Nutrition 0.000 description 33
- 239000002243 precursor Substances 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 13
- 230000003628 erosive effect Effects 0.000 description 12
- 239000000376 reactant Substances 0.000 description 8
- 229910052727 yttrium Inorganic materials 0.000 description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XGSXHQJGLSRGFR-UHFFFAOYSA-N methylcyclopentane;yttrium Chemical compound [Y].C[C]1[CH][CH][CH][CH]1.C[C]1[CH][CH][CH][CH]1.C[C]1[CH][CH][CH][CH]1 XGSXHQJGLSRGFR-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000009420 retrofitting Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- -1 silicon amide Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VPFJVCJZOKOCHT-UHFFFAOYSA-N butylcyclopentane;yttrium Chemical compound [Y].CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1 VPFJVCJZOKOCHT-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- OLQIFTSPAVIXCQ-UHFFFAOYSA-N cyclopenta-1,3-diene;yttrium(3+) Chemical compound [Y+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 OLQIFTSPAVIXCQ-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- GRTBAGCGDOYUBE-UHFFFAOYSA-N yttrium(3+) Chemical compound [Y+3] GRTBAGCGDOYUBE-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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Abstract
Description
本明細書で用いられる用語「半導体ウエハ」は、半導体材料(例えば、シリコン)で作られるウエハ、ならびに、一般に半導体として認識されない材料(例えば、誘電体および/または導電体)で作られるウエハ、の両方を指すが、通常、その上に提供された半導体材料を有するウエハを指す。シリコン・オン・インシュレータ(SOI)ウエハがその一例である。本開示で説明された装置および方法は、直径が200mm、300mm、および450mmの半導体ウエハを含む、様々な大きさの半導体ウエハの処理に用いられてよい。
様々な実施形態では、保護層は、石英部品の上に提供される。保護層は、プラズマへの曝露、特に、水素含有プラズマまたは他の侵食環境への曝露によって、不安定なマイクロフィーチャの形成を防止または低減してよい。さらに、またはそれに代えて、保護層は、プラズマへの曝露、特に、水素含有プラズマまたは他の侵食環境への曝露によって、石英の侵食を防止または低減してよい。結果として、不安定なマイクロフィーチャは、石英部品の表面から剥がれ落ちず、製作された電子デバイスの品質を低下させない。場合によっては、石英部品は、劣化するとしてもよりゆっくりと劣化するため、頻繁に交換される必要がない。さらに、石英インジェクタなど、厳しい許容差を備えたフィーチャを有する石英部品の場合は、フィーチャの特性はプラズマへの曝露中は保護されるため、少なくとも保護層なしの石英部品の場合よりも長い動作期間中、石英部品の機能は意図されたままである。特定の実施形態では、保護層は酸化イットリウムである。
先に説明および論述されたように、保護層は石英部品の上に提供され、石英部品は、誘導結合プラズマ(ICP)と呼ばれることもある変圧器結合プラズマ(TCP)装置などのプラズマリアクタに挿入されてよい、あるいはプラズマリアクタと統合されてよい。
上述のように、プラズマ(水素由来のプラズマ、または、水素ベースのプラズマ)処理中の石英表面の侵食に関連した様々な挑戦に取り組むために、保護層または保護膜が石英構造体の表面に提供される。石英部品は、単独でまたは主に石英である石英構造体、および、プラズマリアクタの動作中に石英部品の消費速度または劣化速度を低下させる、石英構造体上に配置された保護膜を含む。結果として、マイクロフィーチャは、リアクションチャンバ内での処理中にプラズマに曝露された石英部品の表面に形成しにくい、および、最終的にその表面から脱落しにくい。
上述のように、石英部品は、石英構造体を保護層で皮膜することによって製作されてよい。皮膜プロセスは、原子層堆積(ALD)または化学気相堆積(CVD)(プラズマ強化CVD(PECVD)を含む)などの制御可能なプロセスによって、酸化イットリウムなどの皮膜材料を堆積させることを含んでよい。
前述の発明を実施するための形態では、開示の実施形態の十分な理解を提供するために、多くの特定の実施形態が記載された。しかし、当業者には明らかなように、開示の実施形態は、これらの特定の詳細なしに、または、代替の要素もしくはプロセスを用いることによって、実施されてよいだろう。他の例では、開示の実施形態の態様を不必要に曖昧にしないように、周知のプロセス、手段、および部品は、詳細には説明されていない。特定されない限り、数値範囲の端点は、記載値の約±5%のばらつきを含む。
Claims (42)
- 石英部品であって、
a)プラズマリアクタの部品としての使用に適した大きさおよび形状を有する石英構造体と、
b)取り付けられたときに動作中に前記プラズマリアクタ内で生成されるプラズマに曝露される前記石英構造体の少なくとも一面上に配置された酸化イットリウムを含む保護層と、を備え、
前記保護層は、前記石英構造体の前記大きさまたは形状を実質的に変化させない、石英部品。 - 請求項1に記載の石英部品であって、
前記石英部品は、前記プラズマリアクタの外部に位置するプラズマ源と前記プラズマリアクタの内部領域との間で窓として機能する大きさおよび形状を有する、石英部品。 - 請求項1に記載の石英部品であって、
前記石英部品は、無線周波数源またはマイクロ波源からの無線周波電力またはマイクロ波電力が通って前記プラズマリアクタの内部領域に入ることを可能にする位置で、前記プラズマリアクタに配置されるように構成された石英窓である、石英部品。 - 請求項3に記載の石英部品であって、
前記石英窓は、約1cmから3cmの間の厚さを有する、石英部品。 - 請求項3ないし4に記載の石英部品であって、
前記石英窓は、実質的に平坦であり、約40cmから100cmの間の直径または長さを有する、石英部品。 - 請求項1に記載の石英部品であって、
前記石英部品は、ガスを前記プラズマリアクタの内部領域に導入するため、および/または、前記ガスを前記プラズマリアクタの前記内部領域から除去するための1つ以上の流路を備える石英インジェクタである、石英部品。 - 請求項1に記載の石英部品であって、
前記石英部品は、中空ドームである、石英部品。 - 請求項1ないし7に記載の石英部品であって、
前記保護層は、約10nmから10μmの間の厚さを有し、前記厚さは、前記石英部品の表面にわたる平均的な厚さである、石英部品。 - 請求項1ないし8に記載の石英部品であって、
前記石英部品は、約0.01μmから2μmの間の面粗度Raを有し、前記面粗度は、前記石英部品の表面にわたる平均的な面粗度である、石英部品。 - 請求項1ないし9に記載の石英部品であって、
前記保護層は、平均して約1%未満の気孔率を有する、石英部品。 - 請求項1ないし10に記載の石英部品であって、
前記保護層は、平均して約10nmから100nmの間の最大断面寸法を有する酸化イットリウム結晶子を含む、石英部品。 - 請求項1ないし11に記載の石英部品であって、
前記保護層は、少なくとも約90質量%の酸化イットリウムを含む、石英部品。 - 請求項1ないし11に記載の石英部品であって、
前記保護層は、少なくとも約99質量%の酸化イットリウムを含む、石英部品。 - プラズマリアクタであって、
プラズマ処理動作中に基板を保持するように構成された基板支持体と、
動作中にプラズマが形成される前記プラズマリアクタの内部領域に電力を提供するように構成されたプラズマ源と、
石英部品であって、
a)前記プラズマリアクタの部品としての使用に適した大きさおよび形状を有する石英構造体と、
b)取り付けられたときに前記プラズマリアクタ内で生成される前記プラズマに曝露される前記石英構造体の少なくとも一面上に配置された酸化イットリウムを含み、前記石英構造体の前記大きさまたは前記形状を実質的に変化させない保護層と、を備える石英部品と、
前記プラズマ源に無線周波電力またはマイクロ波電力を前記プラズマリアクタの前記内部領域に提供させるためのプログラム命令を含むコントローラと、
を備える、プラズマリアクタ。 - 請求項14に記載のプラズマリアクタであって、
前記プラズマリアクタ内の前記石英部品は、動作中に前記プラズマが前記石英部品に接触または近接するだろう位置に配置される、プラズマリアクタ。 - 請求項14ないし15に記載のプラズマリアクタであって、
前記プラズマは、水素含有プラズマである、プラズマリアクタ。 - 請求項14ないし16に記載のプラズマリアクタであって、
前記プラズマリアクタは、エッチングツール、アッシングツール、および/または、堆積ツールである、プラズマリアクタ。 - 請求項14ないし17に記載のプラズマリアクタであって、
前記プラズマ源は、コイルを含む、プラズマリアクタ。 - 請求項14ないし17に記載のプラズマリアクタであって、
前記プラズマ源は、無線周波数発生器を含む、プラズマリアクタ。 - 請求項14ないし17に記載のプラズマリアクタであって、
前記プラズマ源は、マイクロ波発生器を含む、プラズマリアクタ。 - 請求項14ないし20に記載のプラズマリアクタであって、
前記石英部品は、前記プラズマ源と前記プラズマリアクタの前記内部領域との間で窓として機能する大きさおよび形状を有する、プラズマリアクタ。 - 請求項14ないし20に記載のプラズマリアクタであって、
前記石英部品は、無線周波数源またはマイクロ波源からの前記無線周波電力または前記マイクロ波電力が通って前記プラズマリアクタの前記内部領域に入ることを可能にする位置で、前記プラズマリアクタに配置されるように構成された石英窓である、プラズマリアクタ。 - 請求項22に記載のプラズマリアクタであって、
前記石英窓は、約1cmから3cmの間の厚さを有する、プラズマリアクタ。 - 請求項22ないし23に記載のプラズマリアクタであって、
前記石英窓は、実質的に平坦であり、約40cmから100cmの間の直径または長さを有する、プラズマリアクタ。 - 請求項14ないし20に記載のプラズマリアクタであって、
前記石英部品は、ガスを前記プラズマリアクタの前記内部領域に導入するため、および/または、前記ガスを前記プラズマリアクタの前記内部領域から除去するための1つ以上の流路を備える石英インジェクタである、プラズマリアクタ。 - 請求項14ないし20に記載のプラズマリアクタであって、
前記石英部品は、中空ドームである、プラズマリアクタ。 - 請求項14ないし26に記載のプラズマリアクタであって、
前記保護層は、約10nmから10μmの間の厚さを有し、前記厚さは、前記石英部品の表面にわたる平均的な厚さである、プラズマリアクタ。 - 請求項14ないし27に記載のプラズマリアクタであって、
前記石英部品は、約0.01μmから2μmの間の面粗度Raを有し、前記面粗度は、前記石英部品の表面にわたる平均的な面粗度である、プラズマリアクタ。 - 請求項14ないし28に記載のプラズマリアクタであって、
前記保護層は、平均して約1%未満の気孔率を有する、プラズマリアクタ。 - 請求項14ないし29に記載のプラズマリアクタであって、
前記保護層は、平均して約10nmから100nmの間の最大断面寸法を有する酸化イットリウム結晶子を含む、プラズマリアクタ。 - 請求項14ないし30に記載のプラズマリアクタであって、
前記保護層は、少なくとも約90質量%の酸化イットリウムを含む、プラズマリアクタ。 - 請求項14ないし30に記載のプラズマリアクタであって、
前記保護層は、少なくとも約99質量%の酸化イットリウムを含む、プラズマリアクタ。 - 方法であって、
(a)石英構造体を受け取ることと、
(b)酸化イットリウムを含む保護層で前記石英構造体を皮膜して、プラズマリアクタ用の石英部品を形成することと、を含み、
前記石英部品は、前記プラズマリアクタで用いられるべき部品を形成するのに適した大きさおよび形状を有する、方法。 - 請求項33に記載の方法であって、
前記保護層は、前記石英構造体の前記大きさまたは前記形状を実質的に変化させない、方法。 - 請求項33ないし34に記載の方法であって、さらに、
動作中にプラズマが前記石英部品に接触または近接するだろう位置で、前記石英部品を前記プラズマリアクタに取り付けることを含む、方法。 - 請求項33ないし35に記載の方法であって、
前記プラズマリアクタは、エッチングツール、アッシングツール、および/または、堆積ツールである、方法。 - 請求項33ないし36に記載の方法であって、
前記石英部品は、前記プラズマリアクタの外部に位置するプラズマ源と前記プラズマリアクタの内部領域との間で窓として機能する大きさおよび形状を有する、方法。 - 請求項33ないし37に記載の方法であって、
酸化イットリウムを含む保護層で前記石英構造体を皮膜することは、前記保護層を原子層堆積によって堆積させることを含む、方法。 - 請求項33ないし38に記載の方法であって、さらに、
前記保護層を粗面化することを含む、方法。 - 請求項39に記載の方法であって、
前記保護層を粗面化することは、前記保護層を脱イオン水に曝すことを含む、方法。 - 請求項40に記載の方法であって、
前記脱イオン水は、約50℃から100℃の間の温度を有する、方法。 - 請求項33ないし41に記載の方法であって、
前記プラズマリアクタで用いられるべき前記部品は、窓またはインジェクタである、方法。
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US11087961B2 (en) | 2021-08-10 |
US20210343510A1 (en) | 2021-11-04 |
US20190272981A1 (en) | 2019-09-05 |
CN110223945A (zh) | 2019-09-10 |
KR20190104899A (ko) | 2019-09-11 |
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