JP2017092448A - ウエハの極縁における特徴プロフィールの傾斜を改善するためのエッジリングアセンブリ - Google Patents
ウエハの極縁における特徴プロフィールの傾斜を改善するためのエッジリングアセンブリ Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
Description
本出願は、2015年8月18日に出願され発明の名称を「Edge Ring Assembly for Improving Feature Profile Tilting at Extreme Edge of Wafer(ウエハの極縁における特徴プロフィールの傾斜を改善するためのエッジリングアセンブリ)」とする米国仮特許出願第62/206,753号の優先権を主張する。この仮出願の開示内容は、参照によって本明細書に組み込まれる。
Claims (18)
- プラズマ処理チャンバのためのエッジリングアセンブリであって、
RF電源への電気的接続のために構成された静電チャック(ESC)を取り巻くように構成される上方エッジリングであって、前記ESCは、基板を支えるための上面と、前記上面を取り巻く環状段差とを有し、前記環状段差は、前記上面よりも低い環状棚を画定し、かつ前記環状棚の上方に配置され、電気絶縁材料で形成される、上方エッジリングと、
前記環状段差の中で前記上方エッジリングの下方に配置され、前記環状棚の上に配置される下方内側エッジリングであって、導電性材料で形成され、前記ESCから電気的に絶縁される下方内側エッジリングと、
前記下方内側エッジリングを取り巻く下方外側エッジリングであって、前記環状段差の中で前記上方エッジリングの下方に配置され、前記環状棚の上に配置され、電気絶縁材料で形成される下方外側エッジリングと、
を備えるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリングと前記ESCとの間の誘電体分離が、既定の静電容量を提供するように構成され、前記RF電源から前記ESCに伝達される電力は、前記既定の静電容量によって決定される既定の相対量で前記下方内側エッジリングに伝達されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記上方エッジリングは、石英材料で形成されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方外側エッジリングは、石英材料で形成されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリングは、アルミニウム材料で形成されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリングは、前記ESCからの電気的絶縁を提供する陽極酸化アルミニウム表面を有するエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリング及び前記下方外側エッジリングは、前記ESCの前記環状棚の上に直接配置されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
プラズマ処理時における前記RF電源から前記ESCへのRF電力の供給が、前記ESCへの前記下方内側エッジリングの容量結合を提供するエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
プラズマ処理時における前記容量結合は、前記プラズマ処理時に画定されるプラズマシースを、前記上方エッジリングを実質的に覆うように画定される空間領域内で半径方向に広がらせるエッジリングアセンブリ。 - 請求項9に記載のエッジリングアセンブリであって、
プラズマ処理時における前記容量結合は、前記基板の縁領域におけるイオン集束を低減するエッジリングアセンブリ。 - 請求項10に記載のエッジリングアセンブリであって、
プラズマ処理時における前記容量結合は、前記基板の前記縁領域におけるイオン軌道の、前記基板の上面に垂直な方向からの傾斜を低減するエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記上方エッジリングは、環状に成形され、約15〜24mmの半径方向厚さと、約2〜5mmの高さとを有するエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリングは、環状に成形され、約15〜20mmの半径方向厚さと、約8〜15mmの高さとを有するエッジリングアセンブリ。 - 請求項13に記載のエッジリングアセンブリであって、
前記下方内側エッジリングの内径は、前記ESCの前記環状段差によって画定される側壁と、前記下方内側エッジリングとの間に環状の隙間を画定するために、前記側壁の直径を約0.5〜1mm上回るエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方外側エッジリングは、環状に成形され、約10〜15mmの半径方向厚さと、約8〜15mmの高さとを有するエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記上方エッジリングは、上面を有し、前記上方エッジリングの前記上面は、前記上方エッジリングの内径に画定される段差縁を有し、前記段差縁の下部は、前記基板が存在するときに前記基板が前記段差縁の前記下部の上に広がるように、前記ESCの前記上面よりも低い高さに位置するように構成されるエッジリングアセンブリ。 - 請求項1に記載のエッジリングアセンブリであって、
前記下方内側エッジリングは、イットリアの外側被覆を含むエッジリングアセンブリ。 - プラズマ処理のためのシステムであって、
プロセスチャンバと、
前記プロセスチャンバ内に配置される静電チャック(ESC)であって、前記ESCは、プラズマ処理時に基板を支えるように構成される上面を有し、更に、前記上面を取り巻く環状段差を含み、前記環状段差は、前記上面よりも低い高さに環状棚を画定する、ESCと、
環状棚の上方に配置される上方エッジリングであって、電気絶縁材料で形成される上方エッジリングと、
前記環状段差の中で前記上方エッジリングの下方に配置され、前記環状棚の上に配置される下方内側エッジリングであって、導電性材料で形成され、前記ESCから電気的に絶縁される下方内側エッジリングと、
前記下方内側エッジリングを取り巻く下方外側エッジリングであって、前記環状段差の中で前記上方エッジリングの下方に配置され、前記環状棚の上に配置され、電気絶縁材料で形成される下方外側エッジリングと、
前記ESC内に配置されるバイアス電極であって、前記基板にかかるバイアス電圧を生成するために第1のRF電源からRF電力を受け取るように構成されるバイアス電極と、
を備えるシステム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562206753P | 2015-08-18 | 2015-08-18 | |
US62/206,753 | 2015-08-18 | ||
US15/205,253 US10854492B2 (en) | 2015-08-18 | 2016-07-08 | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
US15/205,253 | 2016-07-08 |
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JP2017092448A true JP2017092448A (ja) | 2017-05-25 |
JP2017092448A5 JP2017092448A5 (ja) | 2019-09-26 |
JP6918451B2 JP6918451B2 (ja) | 2021-08-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016159995A Active JP6918451B2 (ja) | 2015-08-18 | 2016-08-17 | エッジリングアセンブリおよびプラズマ処理のためのシステム |
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US (1) | US10854492B2 (ja) |
EP (1) | EP3133635B1 (ja) |
JP (1) | JP6918451B2 (ja) |
KR (1) | KR102631507B1 (ja) |
CN (2) | CN112216590A (ja) |
SG (1) | SG10201606818XA (ja) |
TW (1) | TWI747837B (ja) |
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WO2019239939A1 (ja) * | 2018-06-15 | 2019-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
KR20210046088A (ko) * | 2018-09-17 | 2021-04-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 rf 가열기 페디스털들 |
JP2021515383A (ja) * | 2017-12-15 | 2021-06-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマチャンバ内で使用するためのリング構造およびシステム |
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US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
CN108538744B (zh) * | 2017-03-01 | 2021-03-02 | 北京北方华创微电子装备有限公司 | 卡盘装置以及半导体加工设备 |
WO2018183245A1 (en) * | 2017-03-31 | 2018-10-04 | Mattson Technology, Inc. | Material deposition prevention on a workpiece in a process chamber |
CN107610999A (zh) * | 2017-08-28 | 2018-01-19 | 北京北方华创微电子装备有限公司 | 下电极机构及反应腔室 |
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KR20170021747A (ko) | 2017-02-28 |
EP3133635A1 (en) | 2017-02-22 |
EP3133635B1 (en) | 2019-10-16 |
TW201719709A (zh) | 2017-06-01 |
US20170053820A1 (en) | 2017-02-23 |
SG10201606818XA (en) | 2017-03-30 |
TWI747837B (zh) | 2021-12-01 |
US10854492B2 (en) | 2020-12-01 |
CN106469637A (zh) | 2017-03-01 |
CN112216590A (zh) | 2021-01-12 |
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