WO2008140012A1 - ドライエッチング装置及びドライエッチング方法 - Google Patents

ドライエッチング装置及びドライエッチング方法 Download PDF

Info

Publication number
WO2008140012A1
WO2008140012A1 PCT/JP2008/058535 JP2008058535W WO2008140012A1 WO 2008140012 A1 WO2008140012 A1 WO 2008140012A1 JP 2008058535 W JP2008058535 W JP 2008058535W WO 2008140012 A1 WO2008140012 A1 WO 2008140012A1
Authority
WO
WIPO (PCT)
Prior art keywords
dry etching
side wall
etching apparatus
plasma generating
generating chamber
Prior art date
Application number
PCT/JP2008/058535
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Morikawa
Koukou Suu
Toshio Hayashi
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to JP2009514136A priority Critical patent/JPWO2008140012A1/ja
Priority to CN200880015720.8A priority patent/CN101681830B/zh
Priority to EP08752426A priority patent/EP2148361A4/en
Priority to AU2008250190A priority patent/AU2008250190A1/en
Priority to KR1020097023163A priority patent/KR101196649B1/ko
Priority to US12/597,637 priority patent/US20100133235A1/en
Publication of WO2008140012A1 publication Critical patent/WO2008140012A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

面内均一性がよく、かつ、エッチングレートの高いドライエッチング装置及びドライエッチング方法の提供。上部のプラズマ発生室及び下部の基板処理室から構成された真空チャンバと、前記プラズマ発生室の側壁の外側に設けられた磁場コイルと、この磁場コイルと側壁の外側との間に配置され、高周波電源に接続したアンテナコイルと、プラズマ発生室上部に設けられたエッチングガス導入手段とを備えたドライエッチング装置において、前記側壁が、比誘電率が４以上の材料からなる。
PCT/JP2008/058535 2007-05-11 2008-05-08 ドライエッチング装置及びドライエッチング方法 WO2008140012A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009514136A JPWO2008140012A1 (ja) 2007-05-11 2008-05-08 ドライエッチング装置及びドライエッチング方法
CN200880015720.8A CN101681830B (zh) 2007-05-11 2008-05-08 干式蚀刻装置及干式蚀刻方法
EP08752426A EP2148361A4 (en) 2007-05-11 2008-05-08 DRYING APPARATUS AND DRYING METHOD
AU2008250190A AU2008250190A1 (en) 2007-05-11 2008-05-08 Dry etching apparatus and dry etching method
KR1020097023163A KR101196649B1 (ko) 2007-05-11 2008-05-08 건식 식각 장치와 건식 식각 방법
US12/597,637 US20100133235A1 (en) 2007-05-11 2008-05-08 Dry etching apparatus and dry etching method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007126442 2007-05-11
JP2007-126442 2007-05-11

Publications (1)

Publication Number Publication Date
WO2008140012A1 true WO2008140012A1 (ja) 2008-11-20

Family

ID=40002212

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058535 WO2008140012A1 (ja) 2007-05-11 2008-05-08 ドライエッチング装置及びドライエッチング方法

Country Status (8)

Country Link
US (1) US20100133235A1 (ja)
EP (1) EP2148361A4 (ja)
JP (1) JPWO2008140012A1 (ja)
KR (1) KR101196649B1 (ja)
CN (1) CN101681830B (ja)
AU (1) AU2008250190A1 (ja)
TW (1) TW200903632A (ja)
WO (1) WO2008140012A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789354A (zh) * 2010-02-11 2010-07-28 中微半导体设备(上海)有限公司 带扩散解离区域的等离子体处理装置
TWI423368B (zh) * 2009-09-18 2014-01-11 Advanced Micro Fab Equip Inc A device for reducing the backside polymer of a substrate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013099372A1 (ja) 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
KR20140087215A (ko) * 2012-12-28 2014-07-09 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
KR102190794B1 (ko) 2018-07-02 2020-12-15 주식회사 기가레인 기계적으로 플라즈마 밀도를 제어하는 기판 처리 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023961A (ja) 1999-07-06 2001-01-26 Nec Corp ドライエッチング装置とドライエッチング方法
JP2002208586A (ja) * 2001-01-11 2002-07-26 Canon Inc 誘電体部品を有するプラズマ処理装置
JP2003048792A (ja) * 2001-08-02 2003-02-21 Toshiba Ceramics Co Ltd 半導体製造装置用耐プラズマ部材とその製造方法
JP2005531157A (ja) * 2002-06-27 2005-10-13 ラム　リサーチ　コーポレーション 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
JP2006100485A (ja) * 2004-09-29 2006-04-13 Ulvac Japan Ltd 高周波電力用分岐スイッチ及びエッチング装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043629A (en) * 1990-08-16 1991-08-27 General Atomics Slotted dielectric-lined waveguide couplers and windows
US20020170678A1 (en) * 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
KR100455350B1 (ko) * 2002-02-08 2004-11-06 권광호 유도 결합형 플라즈마 발생 장치 및 방법
JP4532897B2 (ja) * 2003-12-26 2010-08-25 財団法人国際科学振興財団 プラズマ処理装置、プラズマ処理方法及び製品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023961A (ja) 1999-07-06 2001-01-26 Nec Corp ドライエッチング装置とドライエッチング方法
JP2002208586A (ja) * 2001-01-11 2002-07-26 Canon Inc 誘電体部品を有するプラズマ処理装置
JP2003048792A (ja) * 2001-08-02 2003-02-21 Toshiba Ceramics Co Ltd 半導体製造装置用耐プラズマ部材とその製造方法
JP2005531157A (ja) * 2002-06-27 2005-10-13 ラム　リサーチ　コーポレーション 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
JP2006100485A (ja) * 2004-09-29 2006-04-13 Ulvac Japan Ltd 高周波電力用分岐スイッチ及びエッチング装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2148361A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423368B (zh) * 2009-09-18 2014-01-11 Advanced Micro Fab Equip Inc A device for reducing the backside polymer of a substrate
CN101789354A (zh) * 2010-02-11 2010-07-28 中微半导体设备(上海)有限公司 带扩散解离区域的等离子体处理装置

Also Published As

Publication number Publication date
TW200903632A (en) 2009-01-16
AU2008250190A1 (en) 2008-11-20
EP2148361A4 (en) 2011-05-04
EP2148361A1 (en) 2010-01-27
CN101681830A (zh) 2010-03-24
KR20100016266A (ko) 2010-02-12
KR101196649B1 (ko) 2012-11-02
JPWO2008140012A1 (ja) 2010-08-05
US20100133235A1 (en) 2010-06-03
CN101681830B (zh) 2014-03-12

Similar Documents

Publication Publication Date Title
CN102378462B (zh) 等离子体处理装置
TW200802598A (en) Plasma processing apparatus and plasma processing method
WO2011022612A3 (en) Inductive plasma source
KR101358779B1 (ko) 멀티 코어 플라즈마 발생 플레이트를 구비한 플라즈마반응기
JP2013182996A5 (ja)
KR20100007322A (ko) 3차원 표면형상을 갖는 원통형 가공물을 위한 유도 결합형플라즈마 공정 챔버 및 방법
WO2006026110A3 (en) Yttria insulator ring for use inside a plasma chamber
TW200741862A (en) Plasma processing apparatus and method
JP5072109B2 (ja) プラズマアンテナおよびこれを含むプラズマ処理装置
WO2008140012A1 (ja) ドライエッチング装置及びドライエッチング方法
TW200802597A (en) Plasma processing apparatus and plasma processing method
KR101017101B1 (ko) 유도결합 플라즈마 안테나
WO2009134588A3 (en) Nonplanar faceplate for a plasma processing chamber
JP2008300687A5 (ja)
TW200727344A (en) Plasma processing apparatus and method thereof
US11515122B2 (en) System and methods for VHF plasma processing
WO2008149741A1 (ja) プラズマ処理装置のドライクリーニング方法
JP2000357683A5 (ja)
CN108573846A (zh) 等离子体腔室及等离子体加工设备
CN104733275B (zh) 等离子体工艺设备
TWI540634B (zh) 具有控制施於基材上之電漿偏壓能力的線性連續腔體電漿製程設備
KR20110079509A (ko) 기판 처리 장치
KR20160125164A (ko) 대면적 고밀도 플라즈마 발생방법
KR20100053255A (ko) 이단 진공 챔버를 가지는 유도결합 플라즈마 장치
KR20110109216A (ko) 유도 결합형 플라즈마 소스형 샤워 헤드를 가지는 화학기상 증착 장치

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880015720.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752426

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009514136

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008250190

Country of ref document: AU

ENP Entry into the national phase

Ref document number: 20097023163

Country of ref document: KR

Kind code of ref document: A

REEP Request for entry into the european phase

Ref document number: 2008752426

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008752426

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2008250190

Country of ref document: AU

Date of ref document: 20080508

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12597637

Country of ref document: US