JP2005303292A - 薄膜形成装置 - Google Patents
薄膜形成装置 Download PDFInfo
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- 238000000427 thin-film deposition Methods 0.000 title abstract 2
- 238000010926 purge Methods 0.000 claims abstract description 76
- 239000006185 dispersion Substances 0.000 claims abstract description 64
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
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- 229910003865 HfCl4 Inorganic materials 0.000 claims description 3
- 229910004546 TaF5 Inorganic materials 0.000 claims description 3
- 229910009035 WF6 Inorganic materials 0.000 claims description 3
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 claims description 3
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 3
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 claims description 3
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- 229910003074 TiCl4 Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 31
- 238000007736 thin film deposition technique Methods 0.000 abstract 1
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 26
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- 101000652359 Homo sapiens Spermatogenesis-associated protein 2 Proteins 0.000 description 6
- 101000642464 Homo sapiens Spermatogenesis-associated protein 2-like protein Proteins 0.000 description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
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- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
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- 239000002245 particle Substances 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Abstract
【解決手段】排気可能反応チャンバに結合するよう構成されたガス供給装置は、ヘッド表面を通じてチャンバ内にガスを導入するためのガス分散ヘッドを含む。該ガス分散ヘッドはサセプタ方向へヘッド表面を通じてガスを吐出すための第1セクション及びサセプタ方向へヘッド表面を通じてガスを吐出すための第2セクションを含む。第1及び第2セクションはガス分散ヘッド内で互いに分離され、その少なくともひとつのセクションが、ヘッド表面を通過することなく対応する第2セクション内に存在するガスをそこからパージするための排気システムへ結合されている。
【選択図】図1
Description
特定の実施例が以下に示されるが本発明はこれに限定されるものではない。
図1に示される構造を有する処理装置を使って特定の処理を実行する例が示される。材料ガスとして塩化チタン(TiCl4)及びアンモニア(NH3)を使用してTiN膜を形成する処理が示されている。シリコン基板が真空搬送チャンバ(図示せず)から反応チャンバ1へ搬入された後、残留する水分、酸素等はターボポンプ29によって十分に排気される。基板は基板サセプタ2の上下機構により所定の位置まで移動される。このとき、シャワーヘッドプレート4と基板表面との間のギャップは約2mmから約8mmの範囲に設定される。この例では、ギャップが5mmに設定されて処理が実行された。
この例において、有機金属材料のTa及び材料ガスとしてのNH3を含む、ターシャリーアミルイミドトリス(ジメチルアミド)タンタル:TaN(C4H9)(NC2H6)3を使った窒化タンタル膜形成処理が示されている。図5に示される装置は端子32を通じてRF電力が図1に示される装置に印加される構造を有し、その結果RF電力はシャワープレート4’へ印加される。この場合、基板サセプタは接地され、RF電力はシャワープレート側へ印加される。シリコン基板が真空搬送チャンバ(図示せず)から反応チャンバ1へ搬入された後、残留する水分、酸素等はターボポンプ29によって完全に排気される。基板は基板サセプタ2の上下機構により所定位置まで移動される。このとき、分散板4と基板面との間のギャップは約2mmから約8mmへ設定される。この例において、ギャップは5mmに設定されて処理が実行された。
Claims (44)
- 基板を載置するためのサセプタを具備する排気可能反応チャンバへ結合されるよう構成されたガス供給装置であって、
ヘッド表面を通じてチャンバ内にガスを導入するためのガス分散ヘッドであって、支持体方向へヘッド表面を通じてガスを吐出すための第1セクションと、支持体方向へヘッド表面を通じてガスを吐出すための第2セクションとから成り、前記第1及び第2セクションはガス分散ヘッド内部で互いに分離され、少なくともひとつのセクションがヘッド表面を通過することなく対応するセクション内部に存在するガスをそこからパージするための排気システムと結合されている、ところのガス分散ヘッドから成る装置。 - 請求項1に記載のガス供給装置であって、第1セクションと第2セクションはヘッド表面に対し互いに平行に配置され、前記第2セクションは第1セクションよりもヘッド表面に近く、少なくとも第1セクションが排気システムに結合されている、ところの装置。
- 請求項1に記載のガス供給装置であって、第1セクションと第2セクションはヘッド表面に対し互いに平行に配置され、前記第2セクションは第1セクションよりもヘッド表面に近く、第2セクションが排気システムに結合されている、ところの装置。
- 請求項1に記載のガス供給装置であって、第1セクション及び第2セクションの両方がそれぞれ排気システムに結合されている、ところの装置。
- 請求項1から4のいずれかに記載のガス供給装置であって、前記排気システムの排気コンダクタンスは対応するヘッド表面自体の排気コンダクタンスよりも3〜100倍大きいことを特徴とする、ところの装置。
- 請求項2に記載のガス供給装置であって、第1セクションは第2セクションよりも大きい容積を有する、ところの装置。
- 請求項2に記載のガス供給装置であって、第1セクションは互いに連通することなく第2セクションを貫通してヘッド表面に達している、ところの装置。
- 請求項7に記載のガス供給装置であって、第1セクション及び第2セクションは複数のボアを通じてヘッド表面と連通する、ところの装置。
- 請求項2に記載のガス供給装置であって、第1セクションは中心分散ガス導入口及びそこから半径方向に伸張する円錐形分散板から成る、ところの装置。
- 請求項4に記載のガス供給装置であって、第1セクション及び第2セクションはヘッド表面に対して互いに平行に配置され、それぞれ別々にボアを通じてヘッド表面と連通し、前記第2セクションは第1セクションよりもヘッド表面に近い、ところの装置。
- 請求項10に記載のガス供給装置であって、第2セクションとヘッド表面とを連通させるボアはヘッド表面の主に中心領域に配置されているが、第1セクションとヘッド表面とを連通させるボアはヘッド表面に均一に分布している、ところの装置。
- 請求項11に記載のガス供給装置であって、第2セクションは、ガス分散ヘッド内に形成された内部空間を有し、前記内部空間へ一方から導入されたガスが前記ヘッド表面の中心領域に配置された前記ボアを通過し、さらに前記内部空間のもう一方から前記排気システムにより排気されることを特徴とする、ところの装置。
- 請求項10に記載のガス供給装置であって、第1セクションとヘッド表面とを連通させるボアの総開口面積は、第2セクションとヘッド表面とを連通させるボアの総開口面積よりも大きい、ところの装置。
- 請求項10に記載のガス供給装置であって、第1セクションとヘッド表面とを連通させるボアの平均ボアサイズは、第2セクションとヘッド表面とを連通させるボアの平均ボアサイズより大きい、ところの装置。
- 請求項2に記載のガス供給装置であって、さらに、RF電力をもっぱら第2セクションの内部へ印加するためのRF電源を含む、ところの装置。
- 請求項15に記載のガス供給装置であって、RF電源が第1セクションと第2セクションを物理的に分離しかつ絶縁する第1セクションの底板に結合されており、ヘッド表面が接地されている、ところの装置。
- 請求項1に記載のガス供給装置であって、さらに、反応チャンバの内部へRF電力を印加するためにガス分散ヘッドへ接続されたRF電源を含む、ところの装置。
- 請求項2または4に記載のガス供給装置であって、第1セクションはソースガスライン及びパージガスラインに接続され、第2セクションは添加ガスライン及びパージガスラインに接続されている、ところの装置。
- 請求項18に記載のガス供給装置であって、前記ソースガスはTa[NC(CH3)2C2H5][N(CH3)2]3、Ta(OC2H5)5、Ru(EtCp)2、Ru(Cp)2、Ti[N(CH3)2]4、Ti[N(C2H5)2]4、TiCl4、HfCl4、TaF5、WF6、Hf(NMe2)4、またはHf(OtBu)4のいずれかであり、前記添加ガスは、H2、NH3、O2、Ar、N2、またはHeのいずれかである、ところの装置。
- 請求項15から17のいずれかに記載のガス供給装置であって、前記第1セクションはソースガスラインに接続され、前記第2セクションは添加ガスラインに接続されている、ところの装置。
- 請求項20に記載のガス供給装置であって、前記ソースガスはTa[NC(CH3)2C2H5][N(CH3)2]3、Ta(OC2H5)5、Ru(EtCp)2、Ru(Cp)2、Ti[N(CH3)2]4、Ti[N(C2H5)2]4、TiCl4、HfCl4、TaF5、WF6、Hf(NMe2)4、またはHf(OtBu)4のいずれかであり、前記添加ガスは、H2、NH3、O2、Ar、N2、またはHeのいずれかである、ところの装置。
- 薄膜形成装置であって、
基板を載置するための支持体を具備する排気可能な反応チャンバと、
請求項1に記載のガス供給装置と、
から成る薄膜形成装置。 - 請求項22に記載の薄膜形成装置であって、ヘッド表面と支持体との間の空間は排気システムに結合されている、ところの薄膜形成装置。
- 請求項23に記載の薄膜形成装置であって、ガス分散ヘッドを排気するための排気システム及びヘッド表面と支持体との間の空間を排気するための排気システムは単一の排気ラインに接続され統合されている、ところの薄膜形成装置。
- 基板上に薄膜を形成するための方法であって、
(i)反応チャンバの内部に基板を配置する工程と、
(ii)シャワーヘッド表面を通じてシャワーヘッドの第1経路を介し反応チャンバの内部へ第1ガスを導入する工程であって、前記第1ガスはシャワーヘッド表面の上流側から導入され、前記反応チャンバの内部はシャワーヘッド表面の下流側にある、ところの工程と、
(iii)シャワーヘッド表面の上流側から第1経路を排気しながら、パージガスによりシャワーヘッドの第1経路をパージする工程と、
(iv)シャワーヘッド表面を通じてシャワーヘッドの第2経路を介して反応チャンバの内部へ第2ガスを導入する工程であって、前記第1経路及び第2経路はシャワーヘッド内で互いに分離され、それによって第1ガス及び第2ガスは反応し、基板上に薄膜が形成される、ところの工程と、
から成る方法。 - 請求項25に記載の方法であって、さらに、(v)シャワーヘッド表面の上流側から第2経路を排気しながら、パージガスによりシャワーヘッドの第2経路をパージする工程、を含む方法。
- 請求項26に記載の方法であって、工程(ii)から(v)がひとつのサイクルを構成し、それが繰り返される、ところの方法。
- 請求項27に記載の方法であって、第1に代わって第3ガスが第1ガスと交互に使用される、ところの方法。
- 請求項25に記載の方法であって、工程(iv)において、第2ガスがシャワーヘッドの中心領域から導入される、ところの方法。
- 請求項25に記載の方法であって、反応チャンバの内部はシャワーヘッド表面の下流から絶えず排気される、ところの方法。
- 請求項25に記載の方法であって、さらに、シャワーヘッド表面の下流から反応チャンバの内部を排気しながら、パージガスによって反応チャンバの内部をパージする工程を含む、ところの方法。
- 請求項25に記載の方法であって、さらに、シャワーヘッド内の第2経路に流入する際、第2ガスにRF電力を印加する工程を含む、ところの方法。
- 請求項25に記載の方法であって、さらに、反応チャンバの内部へRF電力を印加する工程を含む、ところの方法。
- 原子層成長用の排気可能反応チャンバへ結合されるよう適応されたガス供給装置であって、
分散板と、
第1ガスが通過するところの第1ボアを有する第1プレートであって、前記分散板と前記第1プレートとの間に第1セクションが形成され、第1ガスは第1セクション内に導入されかつ前記第1ボアを通過する、ところの第1プレートと、
第2ガスが通過するところの第2ボアを有する第2プレートであって、第2セクションは第1プレートと第2プレートとの間に形成され、第2ガスは第2セクション内に導入されかつ第2ボアを通過し、前記第2プレートは第1ガスが通過するところの第3ボアを有し、第2セクションは第2ボアと連通することなく第2セクション内で各第1ボアと各第3ボアとを結合して連通させる、ところの第2プレートと、
から成り、
第1セクションまたは第2セクションの少なくともひとつは対応するボアを通過せずに対応するセクションが排気システムと結合される、ところの装置。 - 請求項34に記載のガス供給装置であって、第1プレート及び第2プレートは互いに平行に配置され、分散板は円錐形状を有する、ところの装置。
- 請求項34に記載のガス供給装置であって、分散板は第1セクション内に第1ガスを導入するための分散板の中心領域に配置された第1ガス導入口を具備する、ところの装置。
- 請求項34に記載のガス供給装置であって、第2セクションは第2セクションの外周付近に配置された第2ガス導入口を具備する、ところの装置。
- 請求項34に記載のガス供給装置であって、第1セクションは排気システムに結合され、第1セクション内に存在する第1ガスは分散板の外周付近から排気される、ところの装置。
- 請求項34に記載のガス供給装置であって、第2セクションは排気システムに結合され、第2セクション内に存在する第2ガスは第2セクションの外周付近に配置された第2ガス排気口を通じて排気される、ところの装置。
- 請求項34に記載のガス供給装置であって、第2ボアが第2プレートの主に中心領域に配置される、ところの装置。
- 請求項34に記載のガス供給装置であって、第1ボアは第1プレート上に均一に分布し、第3ボアは各第1ボアの真下に配置される、ところの装置。
- 請求項34に記載のガス供給装置であって、第3ボアは第2ボアより大きい総開口面積を有する、ところの装置。
- 請求項34に記載のガス供給装置であって、第3ボアは第2ボアよりも大きい平均ボアサイズを有する、ところの装置。
- 請求項40に記載のガス供給装置であって、第2セクションは排気システムに結合され、第2セクションの外周付近の第2ガス排気口及び第2ガス導入口を具備し、第2セクションは第2ボアを有する中心領域を介して導入口から排気口へ縦長形状を有する、ところの装置。
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Also Published As
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US7273526B2 (en) | 2007-09-25 |
US20050229848A1 (en) | 2005-10-20 |
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