CN115354304B - 半导体反应腔 - Google Patents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明提供了一种半导体反应腔,包括:喷淋头、上盖板和分气件;所述喷淋头设置于所述上盖板;所述分气件设置于所述喷淋头的侧壁,并叠置于所述上盖板;所述分气件内部中空,所述分气件包括进气口和出气口;所述进气口连通外部气源;所述出气口连通所述喷淋头与所述上盖板之间的间隙,实现所述外部气源提供的吹扫气体经所述分气件流入所述喷淋头与所述上盖板之间的间隙,将间隙内的反应气体与反应生成物吹扫出间隙,降低间隙内的颗粒度,进而提高薄膜沉积质量。
Description
技术领域
本发明涉及半导体制造技术领域,尤其涉及一种半导体反应腔。
背景技术
原子层沉积是一种可以将物质以单原子膜形式一层一层的镀在基底表面的方法。原子层沉积与普通的化学沉积有相似之处。但在原子层沉积过程中,新一层原子膜的化学反应是直接与之前一层相关联的,这种方式使每次反应只沉积一层原子。在不同的反应气体交替通入之间,需要用吹扫气体对反应腔进行吹扫,以清除未吸附在晶圆表面的过剩反应气体和反应生成物,以保证化学反应只在晶圆表面发生。
现有技术中的原子层沉积设备由于工艺误差和装配误差,喷淋头与上盖板在安装的过程中无法保证两者之间没有缝隙。故在进行薄膜沉积时反应气体会残留在喷淋头与上盖板的缝隙内,并在缝隙内产生反应生成物,造成颗粒度过高,影响薄膜沉积质量。
因此,有必要开发一种新型半导体反应腔,以避免现有技术中存在的上述部分问题。
发明内容
本发明的目的在于提供一种半导体反应腔,能够降低喷淋头与上盖板之间的间隙内的颗粒度,提高薄膜沉积质量。
为实现上述目的,本发明提供的半导体反应腔,包括:喷淋头、上盖板和分气件;所述喷淋头设置于所述上盖板;所述分气件设置于所述喷淋头的侧壁,并叠置于所述上盖板上;所述分气件内部中空,所述分气件包括进气口和出气口;所述进气口连通外部气源;所述出气口连通所述喷淋头与所述上盖板之间的间隙,使吹扫气体从所述进气口进入所述分气件后,从所述出气口输入所述喷淋头与所述上盖板之间的间隙。
本发明提供的半导体反应腔的有益效果在于:通过将所述分气件设置于所述喷淋头的侧壁,并叠置于所述上盖板上,通过所述分气件的连通所述外部气源和间隙相连通,实现所述外部气源提供的吹扫气体经所述分气件流入所述喷淋头与所述上盖板之间的间隙,将间隙内的反应气体与反应生成物吹扫出间隙,降低间隙内的颗粒度,进而提高薄膜沉积质量。
可选的,所述分气件的形状为环形,所述分气件环绕在所述喷淋头的周围,所述出气口临近所述喷淋头。其有益效果在于:将环形的所述分气件环绕设置于所述喷淋头的侧壁,对所述喷淋头圆周方向的全部缝隙进行吹扫,提高所述喷淋头侧壁各个位置的吹扫均匀性。
可选的,所述进气口远离所述喷淋头。
可选的,所述出气口为圆形开口。
可选的,若干所述出气口等间距设置于所述分气件的侧壁。其有益效果在于:有利于提高所述喷淋头侧壁各个位置的吹扫均匀性。
可选的,所述出气口为条状开口。其有益效果在于:条状开口在所述喷淋头侧壁的圆周方向上输送吹扫气体更为均匀,有利于进一步提高所述喷淋头侧壁各个位置的吹扫均匀性。
可选的,所述喷淋头的侧壁上设置有环形的凸起部,所述凸起部叠置于所述分气件上。其有益效果在于:有利于将外部气源提供的吹扫气体全部流入所述喷淋头与所述上盖板的间隙内,避免吹扫气体从所述喷淋头与所述分气件的缝隙流走。
可选的,所述分气件的形状为弧形。
附图说明
图1为本发明实施例中半导体反应腔的结构示意图;
图2为图1所示的分气件所在位置处的剖面结构示意图;
图3为本发明第一种实施例中分气件的结构示意图;
图4为本发明第二种实施例中分气件的结构示意图;
图5为本发明第三种实施例中分气件的结构示意图;
图6为图5所示的分气件的剖面结构示意图;
图7为吹扫气体流动方向的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。除非另外定义,此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。
为解决现有技术存在的问题,本发明实施例提供了一种半导体反应腔。
图1为本发明实施例中半导体反应腔的结构示意图;图2为图1所示的分气件所在位置处的剖面结构示意图;图3为本发明第一种实施例中分气件的结构示意图。
本发明一些实施例中,参照图1和图2,所述上盖板2的中心镂空,所述喷淋头1设置于所述上盖板2的中心,由于机械加工误差和装配误差,所述喷淋头1与所述上盖板2之间不可避免形成间隙,造成反应气体进入所述间隙内,并在不同反应气体交替进入所述间隙后,在所述间隙内产生反应生成物。
本发明一些实施例中,参照图1、图2和图3,图1所示的半导体反应腔包括:喷淋头1、上盖板2和分气件3;所述喷淋头1设置于所述上盖板2;所述分气件3设置于所述喷淋头1的侧壁,并叠置于所述上盖板2;所述分气件3内部中空,所述分气件3包括进气口31和出气口32;所述进气口31连通外部气源;所述出气口32连通所述喷淋头1与所述上盖板2之间的间隙,使吹扫气体经所述进气口31进入所述分气件3后,从所出气32口输入所述喷淋头1与所述上盖板2之间的间隙,并将所述间隙内的反应气体和反应生成物从排气通道5排出。
本发明一些具体实施例中,参照图2,所述喷淋头1包括喷淋头主体11、喷淋头连接件12和喷淋板13,所述喷淋头连接件12通过螺纹连接与所述喷淋头主体11和所述喷淋板13相固定。
本发明一些具体实施例中,参照图3,所述分气件3可以为弧形,例如优弧形、劣弧形或半圆弧形的内部中空零件,但本发明不限于此;此时,所述分气件3围绕在所述喷淋头1的周围。
图4为本发明第二种实施例中分气件的结构示意图。
本发明一些具体实施例中,参照图4,所述分气件3的出气口32可以为设置于所述分气件3靠近所述喷淋头1一侧的条状开口。
本发明一些具体实施例中,参照图2,所述外部气源(图中未标示)用于提供吹扫气体,所述吹扫气体为惰性气体,所述吹扫气体从所述进气口31进入所述分气件3的内部,流经所述分气件3内部的中空腔体后进入所述喷淋头1与所述上盖板2之间的间隙。
本发明一些实施例中,参照图2和图4,所述分气件3的形状为环形,所述分气件3的内部空心的腔体也为环形;此时,所述分气件3环绕所述喷淋头1的整个侧壁,所述进气口31设置于所述分气件3的外壁,远离所述喷淋头1;所述出气口32设置于所述分气件3的内壁,所述出气口32临近所述喷淋头1,并分布于整个所述分气件3的内侧壁。
图5为本发明第三种实施例中分气件的结构示意图;图6为图5所示的分气件的剖面结构示意图。
本发明一些实施例中,参照图5和图6,所述分气件3的形状为环形,所述出气口32为孔洞,所述出气口32沿所述分气件3的内侧壁等间距设置于所述分气件3的侧壁,使吹扫气体在所述喷淋头1的圆周方向上均匀流入所述喷淋头1与所述上盖板2之间的间隙。
本发明一些具体实施例中,所述出气口32的形状可以为圆形孔或方形孔,但本发明不限于此。
图7为吹扫气体流动方向的示意图。
本发明一些实施例中,参照图7,所述喷淋头1包括环形的凸起部14,所述凸起部14叠置于所述分气件3上,所述环形的凸起部14在所述喷淋头1装配时能起到定位作用,并将所述分气件3固定于所述凸起部14和所述上盖板2之间。同时,所述凸起部14使得所述分气件3的上表面相接处,使得所述喷淋头1与所述分气件3之间形成两个相互垂直的接触面,有利于提升密封效果,使吹扫气体进入所述喷淋头1与所述分气件3之间的间隙后,能全部向所述喷淋头1与所述上盖板2之间的间隙流动,向即图示A方向流动,最终流入所述排气通道5排出设备。
虽然在上文中详细说明了本发明的实施方式,但是对于本领域的技术人员来说显而易见的是,能够对这些实施方式进行各种修改和变化。但是,应理解,这种修改和变化都属于权利要求书中所述的本发明的范围和精神之内。而且,在此说明的本发明可有其它的实施方式,并且可通过多种方式实施或实现。
Claims (8)
1.一种半导体反应腔,其特征在于,包括:喷淋头、上盖板和分气件;
所述喷淋头设置于所述上盖板;所述分气件设置于所述喷淋头的侧壁,并叠置于所述上盖板;
所述分气件内部中空,所述分气件包括进气口和出气口;
所述进气口连通外部气源,所述外部气源用于提供吹扫气体;
所述出气口连通所述喷淋头与所述上盖板之间的间隙,使吹扫气体经所述进气口进入所述分气件后,从所述出气口输入所述喷淋头与所述上盖板之间的间隙。
2.根据权利要求1所述的半导体反应腔,其特征在于,所述分气件的形状为环形,所述分气件环绕在所述喷淋头的周围,所述出气口临近所述喷淋头。
3.根据权利要求2所述的半导体反应腔,其特征在于,所述进气口远离所述喷淋头。
4.根据权利要求2所述的半导体反应腔,其特征在于,所述出气口为圆形开口。
5.根据权利要求4所述的半导体反应腔,其特征在于,若干所述出气口等间距设置于所述分气件的侧壁。
6.根据权利要求2所述的半导体反应腔,其特征在于,所述出气口为条状开口。
7.根据权利要求2所述的半导体反应腔,其特征在于,所述喷淋头的侧壁上设置有环形的凸起部,所述凸起部叠置于所述分气件上。
8.根据权利要求1所述的半导体反应腔,其特征在于,所述分气件的形状为弧形。
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