JP2015015466A - 複数プレナム/2温度シャワーヘッド - Google Patents
複数プレナム/2温度シャワーヘッド Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
- B05B1/18—Roses; Shower heads
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Abstract
Description
Claims (24)
- 半導体処理機器で使用するためのシャワーヘッドであって、
第1のプレナム容積部と、
第2のプレナム容積部と、
フェイスプレートと、
プレナム分割体と
を備え、
前記プレナム分割体が、第1の面と、前記プレナム分割体の前記第1の面とは逆側の第2の面とを有し、
前記フェイスプレートが、第1の面と、前記フェイスプレートの前記第1の面とは逆側の第2の面とを有し、
第1のギャップを形成するように、前記フェイスプレートの前記第1の面が、前記プレナム分割体の前記第2の面に面し、前記プレナム分割体の前記第2の面から第1の距離だけずらして配され、
前記プレナム分割体の前記第1の面が、前記第1のプレナム容積部を部分的に画定し、
前記第2のプレナム容積部が、前記第1のギャップ内部で前記プレナム分割体と前記フェイスプレートとの間に位置し、
前記プレナム分割体が、複数の管状構造を含み、前記管状構造が、前記プレナム分割体の前記第2の面から第2の距離だけ突出し、各管状構造が、外面と、前記管状構造および前記プレナム分割体を通過する第1の貫通穴とを有し、
前記フェイスプレートが、複数の第2の貫通穴を含み、各第2の貫通穴が、前記複数の管状構造の異なる1つに対応し、前記対応する管状構造の前記外面から少なくとも第3の距離だけずれた内面を有し、
前記第1の距離が、前記第2の距離未満であり、
前記フェイスプレートが、前記プレナム分割体から実質的に伝熱的に隔離される、シャワーヘッド。 - 請求項1、および3から22のいずれか一項に記載のシャワーヘッドであって、
前記フェイスプレートと前記プレナム分割体が、それらの間で0.05W/(in2K)以下の熱伝導率を有するように構成される、シャワーヘッド。 - 請求項1、2、および4から22のいずれか一項に記載のシャワーヘッドであって、さらに、
バックプレートを備え、
前記第1のプレナム容積部が、前記バックプレートによっても部分的に画定され、
前記バックプレートが、複数の内部冷却経路を含み、能動的に冷却されるように構成される、シャワーヘッド。 - 請求項1から3、および5から22のいずれか一項に記載のシャワーヘッドであって、
前記プレナム分割体が、前記プレナム分割体の内部でクーラントを循環させるように構成された1つまたは複数の内部冷却経路を含む、シャワーヘッド。 - 請求項1から4、および6から22のいずれか一項に記載のシャワーヘッドであって、
さらに、無線周波数発生器に接続され、かつ第1のガス入口に流体接続されたプラズマドームを備え、
前記第1のプレナム容積部が、前記プラズマドームによっても部分的に画定され、
前記プラズマドームおよびRF発生器が、前記第1のガス入口からのガスを使用して前記第1のプレナム容積部の内部でプラズマを発生するように構成される、シャワーヘッド。 - 請求項1から5、および7から22のいずれか一項に記載のシャワーヘッドであって、
前記フェイスプレートが、前記複数の第2の貫通穴に加えて、複数の追加の第2の貫通穴を有し、
前記複数の追加の第2の貫通穴が、対応する管状構造を有さない、シャワーヘッド。 - 請求項1から6、および8から22のいずれか一項に記載のシャワーヘッドであって、
前記管状構造が実質的に円筒形であり、前記複数の第1の貫通穴と前記複数の第2の貫通穴が実質的に円形であり、各第2の貫通穴の内面と各対応する管状構造の外面との間のずれが、前記第2の貫通穴と前記対応する管状構造との間に環状ギャップ領域を生じる、シャワーヘッド。 - 請求項1から7、および9から22のいずれか一項に記載のシャワーヘッドであって、
前記第3の距離が、約0.1インチ未満である、シャワーヘッド。 - 請求項1から8、および10から22のいずれか一項に記載のシャワーヘッドであって、
前記第3の距離が、約0.005インチ〜0.020インチの間である、シャワーヘッド。 - 請求項1から9、および11から22のいずれか一項に記載のシャワーヘッドであって、
各管状構造が、前記対応する第2の貫通穴の近傍の前記フェイスプレートの前記第2の面と実質的に面一の位置で終端する、シャワーヘッド。 - 請求項1から10、および12から22のいずれか一項に記載のシャワーヘッドであって、さらに、
第1のガス入口と、
第2のガス入口と、を備え、
前記第1のガス入口が、前記第1のプレナム容積部にガスを供給するように構成され、
前記第2のガス入口が、前記第2のプレナム容積部にガスを供給するように構成され、
前記第2のガス入口が、実質的に管状であり、前記プレナム分割体を通過し、前記フェイスプレートの前記第1の面と前記プレナム分割体の前記第2の面との間にまたがり、
前記第2のガス入口が、複数の径方向ガス分散穴の円形アレイを有し、各径方向ガス分散穴が、前記第2のガス入口を前記第2のプレナム容積部と流体接続させる、シャワーヘッド。 - 請求項1から11のいずれか一項に記載のシャワーヘッドであって、さらに、
1つまたは複数の低接触面積(LCA)要素と、
内周を有する第1の低熱伝導バリアと、を備え、
前記1つまたは複数のLCA要素が、前記プレナム分割体に対して前記フェイスプレートを支持し、
前記第1の低熱伝導バリアが、前記第1のギャップをまたぐように、前記フェイスプレートと前記プレナム分割体との間に配されており、
前記第1の低熱伝導バリアが、前記第1の低熱伝導バリアの前記内周の内側に前記複数の第2の貫通穴が位置するように配される、シャワーヘッド。 - 請求項12、および14から22のいずれか一項に記載のシャワーヘッドであって、
前記フェイスプレートから前記シャワーヘッドの他の構成要素への前記熱伝導経路の実質的に全てが、前記1つまたは複数のLCA要素および前記第1の低熱伝導バリアによって提供される、シャワーヘッド。 - 請求項12、13、および15から22のいずれか一項に記載のシャワーヘッドであって、
前記1つまたは複数のLCA要素が、前記第1の低熱伝導バリアに巡らせて間隔を空けて配置された複数のポストによって提供され、前記ポストが、前記フェイスプレートを張力下で支持するように構成される、シャワーヘッド。 - 請求項12から14、および16から22のいずれか一項に記載のシャワーヘッドであって、
さらに、カラーを含み、前記カラーが、前記フェイスプレートから少なくとも第4の距離だけずらして配されたカラー内面を有し、前記フェイスプレートよりも小さい内部アパーチャを有し、前記1つまたは複数のLCA要素が、複数のLCAボールによって提供され、前記LCAボールが、圧縮下で前記フェイスプレートの前記第2の面を支持し、前記LCAボールが、前記カラー内面と前記フェイスプレートとの間に位置する、シャワーヘッド。 - 請求項12から15のいずれか一項に記載のシャワーヘッドであって、
さらに、内周を有する第2の低熱伝導バリアを備え、
前記第2の低熱伝導バリアが、前記第1のギャップをまたぐように、前記フェイスプレートと前記プレナム分割体との間に配されており、
前記第1の低熱伝導バリアが、前記第2の低熱伝導バリアの前記内周の内側に配される、シャワーヘッド。 - 請求項16、および18から22のいずれか一項に記載のシャワーヘッドであって、
前記フェイスプレートから前記シャワーヘッドの他の構成要素への前記熱伝導経路の実質的に全てが、前記1つまたは複数のLCA要素、前記第1の低熱伝導バリア、および前記第2の低熱伝導バリアによって提供される、シャワーヘッド。 - 請求項16または17に記載のシャワーヘッドであって、
第3のプレナム容積部が、前記フェイスプレートの前記第1の面、前記プレナム分割体の前記第2の面、前記第1の低熱伝導バリア、および前記第2の低熱伝導バリアによって少なくとも部分的に画定され、
前記フェイスプレートが、
複数の内部流路と、
前記フェイスプレートの前記第1の面にある複数の第3の穴と
を含み、
各第3の穴が、前記複数の内部流路の1つと前記フェイスプレートの前記第1の面との間をまたぎ、
各第3の穴が、前記第1の低熱伝導バリアと前記第2の低熱伝導バリアとの間の領域内で、前記フェイスプレートの前記第1の面に抜ける、シャワーヘッド。 - 請求項18に記載のシャワーヘッドであって、
前記第1のプレナム容積部、前記第2のプレナム容積部、および前記第3のプレナム容積部が全て、別個のガス入口から供給される、シャワーヘッド。 - 請求項18、19、21、および22のいずれか一項に記載のシャワーヘッドであって、
前記複数の第2の貫通穴が、前記複数の内部流路に交差し、それにより、前記複数の第2の貫通穴が、前記フェイスプレート内部の前記複数の内部流路と流体連絡する、シャワーヘッド。 - 請求項18から20のいずれか一項に記載のシャワーヘッドであって、
前記フェイスプレートが、さらに、前記フェイスプレートの前記第2の面に複数の第4の穴を含み、
各第4の穴が、前記複数の内部流路の1つと、前記フェイスプレートの前記第2の面との間をまたぐ、シャワーヘッド。 - 請求項21に記載のシャワーヘッドであって、
前記複数の第4の穴が、前記フェイスプレート内部の前記複数の第2の貫通穴から流体的に隔離される、シャワーヘッド。 - 反応チャンバと、
ウェハ支持体と、
シャワーヘッドと
を備える半導体処理装置であって、
前記シャワーヘッドが、
第1のプレナム容積部と、
第2のプレナム容積部と、
フェイスプレートと、
プレナム分割体と、を含み、
前記プレナム分割体が、第1の面と、前記プレナム分割体の前記第1の面とは逆側の第2の面とを有し、
前記フェイスプレートが、第1の面と、前記フェイスプレートの前記第1の面とは逆側の第2の面とを有し、
第1のギャップを形成するように、前記フェイスプレートの前記第1の面が、前記プレナム分割体の前記第2の面に面し、前記プレナム分割体の前記第2の面から第1の距離だけずらして配され、
前記プレナム分割体の前記第1の面が、前記第1のプレナム容積部を部分的に画定し、
前記第2のプレナム容積部が、前記第1のギャップ内部で前記プレナム分割体と前記フェイスプレートとの間に位置し、
前記プレナム分割体が、複数の管状構造を含み、前記管状構造が、前記プレナム分割体の前記第2の面から第2の距離だけ突出し、各管状構造が、外面と、前記管状構造および前記プレナム分割体を通過する第1の貫通穴とを有し、
前記フェイスプレートが、複数の第2の貫通穴を含み、各第2の貫通穴が、前記管状構造の異なる1つに対応し、前記対応する管状構造の前記外面から少なくとも第3の距離だけずれた内面を有し、
前記第1の距離が、前記第2の距離未満であり、
前記フェイスプレートが、前記プレナム分割体から実質的に伝熱的に隔離され、
前記半導体処理装置が、前記シャワーヘッドの前記フェイスプレートの前記第2の面が前記ウェハ支持体に面するように構成され、
前記ウェハ支持体が、前記反応チャンバ内部で半導体ウェハを支持するように構成される、半導体処理装置。 - 1つまたは複数の反応チャンバを備える半導体処理ツールであって、少なくとも1つの反応チャンバが、ウェハ支持体と、シャワーヘッドとを有し、
前記シャワーヘッドが、
第1のプレナム容積部と、
第2のプレナム容積部と、
フェイスプレートと、
プレナム分割体と、を含み、
前記プレナム分割体が、第1の面と、前記プレナム分割体の前記第1の面とは逆側の第2の面とを有し、
前記フェイスプレートが、第1の面と、前記フェイスプレートの前記第1の面とは逆側の第2の面とを有し、
第1のギャップを形成するように、前記フェイスプレートの前記第1の面が、前記プレナム分割体の前記第2の面に面し、前記プレナム分割体の前記第2の面から第1の距離だけずらして配され、
前記プレナム分割体の前記第1の面が、前記第1のプレナム容積部を部分的に画定し、
前記第2のプレナム容積部が、前記第1のギャップ内部で前記プレナム分割体と前記フェイスプレートとの間に位置し、
前記プレナム分割体が、複数の管状構造を含み、前記管状構造が、前記プレナム分割体の前記第2の面から第2の距離だけ突出し、各管状構造が、外面と、前記管状構造および前記プレナム分割体を通過する第1の貫通穴とを有し、
前記フェイスプレートが、複数の第2の貫通穴を含み、各第2の貫通穴が、前記管状構造の異なる1つに対応し、前記対応する管状構造の前記外面から少なくとも第3の距離だけずれた内面を有し、
前記第1の距離が、前記第2の距離未満であり、
前記フェイスプレートが、前記プレナム分割体から実質的に伝熱的に隔離され、
前記半導体処理ツールが、前記シャワーヘッドの前記フェイスプレートの前記第2の面が前記ウェハ支持体に面するように構成され、
前記ウェハ支持体が、前記少なくとも1つの反応チャンバ内部で半導体ウェハを支持するように構成される、半導体処理ツール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/934,597 | 2013-07-03 | ||
US13/934,597 US9677176B2 (en) | 2013-07-03 | 2013-07-03 | Multi-plenum, dual-temperature showerhead |
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KR20230045543A (ko) | 2021-09-28 | 2023-04-04 | 도쿄엘렉트론가부시키가이샤 | 기판 처리를 행하는 장치, 가스 샤워 헤드, 및 기판 처리를 행하는 방법 |
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TWI643677B (zh) | 2018-12-11 |
JP6355450B2 (ja) | 2018-07-11 |
CN104278254A (zh) | 2015-01-14 |
TW201526992A (zh) | 2015-07-16 |
KR20150004769A (ko) | 2015-01-13 |
US20150007770A1 (en) | 2015-01-08 |
KR102126091B1 (ko) | 2020-06-24 |
SG10201403736YA (en) | 2015-02-27 |
CN104278254B (zh) | 2017-04-12 |
US9677176B2 (en) | 2017-06-13 |
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