JP2005072554A5 - - Google Patents

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Publication number
JP2005072554A5
JP2005072554A5 JP2004022989A JP2004022989A JP2005072554A5 JP 2005072554 A5 JP2005072554 A5 JP 2005072554A5 JP 2004022989 A JP2004022989 A JP 2004022989A JP 2004022989 A JP2004022989 A JP 2004022989A JP 2005072554 A5 JP2005072554 A5 JP 2005072554A5
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JP
Japan
Prior art keywords
semiconductor
wiring
semiconductor device
insulating film
manufacturing
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JP2004022989A
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English (en)
Japanese (ja)
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JP2005072554A (ja
JP4401181B2 (ja
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Priority claimed from JP2004022989A external-priority patent/JP4401181B2/ja
Priority to JP2004022989A priority Critical patent/JP4401181B2/ja
Priority to TW093122499A priority patent/TWI236046B/zh
Priority to KR1020040060057A priority patent/KR100636770B1/ko
Priority to US10/910,805 priority patent/US7312107B2/en
Priority to CNB2004100562611A priority patent/CN100367451C/zh
Priority to EP04018715A priority patent/EP1505643B1/en
Priority to CN200710197182.6A priority patent/CN101174572B/zh
Publication of JP2005072554A publication Critical patent/JP2005072554A/ja
Publication of JP2005072554A5 publication Critical patent/JP2005072554A5/ja
Priority to US11/956,160 priority patent/US7919875B2/en
Publication of JP4401181B2 publication Critical patent/JP4401181B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004022989A 2003-08-06 2004-01-30 半導体装置及びその製造方法 Expired - Fee Related JP4401181B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004022989A JP4401181B2 (ja) 2003-08-06 2004-01-30 半導体装置及びその製造方法
TW093122499A TWI236046B (en) 2003-08-06 2004-07-28 Semiconductor device and manufacturing method thereof
KR1020040060057A KR100636770B1 (ko) 2003-08-06 2004-07-30 반도체 장치 및 그 제조 방법
US10/910,805 US7312107B2 (en) 2003-08-06 2004-08-04 Semiconductor device and manufacturing method thereof
CN200710197182.6A CN101174572B (zh) 2003-08-06 2004-08-06 半导体装置及其制造方法
EP04018715A EP1505643B1 (en) 2003-08-06 2004-08-06 Semiconductor device and manufacturing method thereof
CNB2004100562611A CN100367451C (zh) 2003-08-06 2004-08-06 半导体装置及其制造方法
US11/956,160 US7919875B2 (en) 2003-08-06 2007-12-13 Semiconductor device with recess portion over pad electrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003288150 2003-08-06
JP2004022989A JP4401181B2 (ja) 2003-08-06 2004-01-30 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009008441A Division JP4805362B2 (ja) 2003-08-06 2009-01-19 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005072554A JP2005072554A (ja) 2005-03-17
JP2005072554A5 true JP2005072554A5 (enExample) 2007-02-08
JP4401181B2 JP4401181B2 (ja) 2010-01-20

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JP2004022989A Expired - Fee Related JP4401181B2 (ja) 2003-08-06 2004-01-30 半導体装置及びその製造方法

Country Status (6)

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US (2) US7312107B2 (enExample)
EP (1) EP1505643B1 (enExample)
JP (1) JP4401181B2 (enExample)
KR (1) KR100636770B1 (enExample)
CN (1) CN100367451C (enExample)
TW (1) TWI236046B (enExample)

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