JP4743631B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4743631B2 JP4743631B2 JP2006287249A JP2006287249A JP4743631B2 JP 4743631 B2 JP4743631 B2 JP 4743631B2 JP 2006287249 A JP2006287249 A JP 2006287249A JP 2006287249 A JP2006287249 A JP 2006287249A JP 4743631 B2 JP4743631 B2 JP 4743631B2
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- semiconductor substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
5 パッシベーション膜 6 接着層 7 支持体 8 開口部
9 第2の絶縁膜 10 配線層 11 電極接続層 12 保護層
13 側壁電極 20 半導体装置 30 回路基板 31 外部電極
32 赤外線吸収層 33 反射層 35 回路基板 36 凹部
37 外部電極 38 外部電極 100 半導体基板
101 デバイス素子 102 パッド電極 103 第1の絶縁膜
104 ガラス基板 105 接着層 106 第2の絶縁膜
107 配線層 108 保護層 109 導電端子 110 半導体装置
DL ダイシングライン
Claims (8)
- その表面上にデバイス素子が形成された半導体基板と、
前記デバイス素子と電気的に接続されたパッド電極と、
前記半導体基板の側面及び裏面を被覆する絶縁膜と、
前記パッド電極と電気的に接続され、前記半導体基板の側面に沿って前記絶縁膜上に形成された配線層と、
金属からなり前記配線層を被覆する電極接続層と、
前記電極接続層上に形成され、前記半導体基板の側面側から外部に露出し、前記半導体基板の側面に沿って形成され、かつ前記配線層を介して前記パッド電極と電気的に接続された側壁電極と、
前記側壁電極を囲むとともに、前記半導体基板の裏面側を被覆し、前記側壁電極と重畳する領域に開口を有する保護層とを備えることを特徴とする半導体装置。 - 前記半導体基板の表面上に接着層を介して貼り合わされた支持体を備えることを特徴とする請求項1に記載の半導体装置。
- 前記配線層は、前記半導体基板の裏面の一部上に延在していることを特徴とする請求項1または請求項2に記載の半導体装置。
- デバイス素子及び前記デバイス素子と電気的に接続されたパッド電極がその表面上に形成された半導体基板を準備し、
前記半導体基板の裏面側から前記半導体基板の一部を除去して、前記パッド電極の少なくとも一部を露出させる工程と、
前記露出されたパッド電極と電気的に接続された配線層を、前記半導体基板の側面に絶縁膜を介して形成する工程と、
前記配線層を被覆するように、金属からなる電極接続層を形成する工程と、
前記半導体基板の裏面側を被覆し、側壁電極形成領域に開口部を有する保護層を形成する工程と、
前記保護層が開口した領域の前記電極接続層上に、前記半導体基板の側面側から外部に露出し、前記配線層を介して前記パッド電極と電気的に接続された側壁電極を、前記半導体基板の側面に沿って形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記半導体基板の表面上に接着層を介して支持体を貼り合わせる工程を備えることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記絶縁膜は前記半導体基板の裏面上にも形成され、
前記配線層を形成する工程では、前記配線層が前記半導体基板の裏面の前記絶縁膜の一部上に延在するように形成することを特徴とする請求項4または請求項5に記載の半導体装置の製造方法。 - 凹部を有し前記凹部の周囲の表面又は前記凹部内の側面に外部電極を有した回路基板を備え、
前記凹部内に前記半導体基板が載置され、前記外部電極と、露出した前記側壁電極が直接接続されていることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体装置。 - 前記側壁電極を形成する工程の後、
回路基板に形成された凹部内に、前記半導体基板を載置し、前記回路基板の前記凹部の周囲の表面又は前記凹部内の側面に設けられた外部電極と、露出した前記側壁電極を直接接続する工程を含むことを特徴とする請求項4乃至請求項6のいずれかに記載の半導体装置の製造方法。
Priority Applications (4)
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JP2006287249A JP4743631B2 (ja) | 2006-10-23 | 2006-10-23 | 半導体装置及びその製造方法 |
TW096136517A TWI349982B (en) | 2006-10-23 | 2007-09-29 | Semiconductor device and method for making the same |
US11/875,438 US7589388B2 (en) | 2006-10-23 | 2007-10-19 | Semiconductor device and method of manufacturing the same |
CN200710166886.7A CN100546021C (zh) | 2006-10-23 | 2007-10-23 | 半导体装置及其制造方法 |
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JP2006287249A JP4743631B2 (ja) | 2006-10-23 | 2006-10-23 | 半導体装置及びその製造方法 |
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JP (1) | JP4743631B2 (ja) |
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JP2008166381A (ja) * | 2006-12-27 | 2008-07-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US7566944B2 (en) * | 2007-01-11 | 2009-07-28 | Visera Technologies Company Limited | Package structure for optoelectronic device and fabrication method thereof |
CN101587903B (zh) * | 2008-05-23 | 2011-07-27 | 精材科技股份有限公司 | 电子元件封装体及其制作方法 |
US7723150B2 (en) * | 2008-06-27 | 2010-05-25 | United Microelectronics Corp. | Image sensor and fabricating method thereof |
CN102496622B (zh) * | 2011-11-25 | 2016-03-30 | 格科微电子(上海)有限公司 | 图像传感器芯片的封装方法以及摄像模组 |
CN102623471B (zh) * | 2012-03-27 | 2015-09-09 | 格科微电子(上海)有限公司 | 图像传感器的封装方法 |
JP6136349B2 (ja) * | 2013-02-22 | 2017-05-31 | セイコーエプソン株式会社 | 電子デバイス、電子機器及び移動体 |
US20140326856A1 (en) * | 2013-05-06 | 2014-11-06 | Omnivision Technologies, Inc. | Integrated circuit stack with low profile contacts |
FR3086797B1 (fr) * | 2018-09-27 | 2021-10-22 | St Microelectronics Tours Sas | Circuit electronique comprenant des diodes |
KR102518803B1 (ko) * | 2018-10-24 | 2023-04-07 | 삼성전자주식회사 | 반도체 패키지 |
US11043437B2 (en) * | 2019-01-07 | 2021-06-22 | Applied Materials, Inc. | Transparent substrate with light blocking edge exclusion zone |
DE102019129411A1 (de) * | 2019-09-12 | 2021-03-18 | Wika Alexander Wiegand Se & Co. Kg | Aufnehmerkörper mit einem Messelement und Herstellungsverfahren für einen Aufnehmerkörper |
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Patent Citations (3)
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JPH0917913A (ja) * | 1995-06-29 | 1997-01-17 | Toshiba Corp | 電子回路装置 |
JP2002093944A (ja) * | 2000-09-11 | 2002-03-29 | Oki Electric Ind Co Ltd | 半導体装置,半導体装置の製造方法,スタック型半導体装置及びスタック型半導体装置の製造方法 |
JP2003007909A (ja) * | 2001-04-17 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置の製造方法とそれによる半導体装置およびこれを用いた電子機器 |
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JP2008108764A (ja) | 2008-05-08 |
US20080128914A1 (en) | 2008-06-05 |
TW200820385A (en) | 2008-05-01 |
US7589388B2 (en) | 2009-09-15 |
TWI349982B (en) | 2011-10-01 |
CN101170090A (zh) | 2008-04-30 |
CN100546021C (zh) | 2009-09-30 |
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