JP2001504279A - 電極間に小面積のコンタクトを製造するための方法 - Google Patents
電極間に小面積のコンタクトを製造するための方法Info
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims abstract description 97
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 82
- 230000015654 memory Effects 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 18
- 229920005591 polysilicon Polymers 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 164
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000007736 thin film deposition technique Methods 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000012782 phase change material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Surface Heating Bodies (AREA)
- Inert Electrodes (AREA)
- Electrodes Of Semiconductors (AREA)
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 基板上に導電層を設ける工程と、 前記導電層の盛り上げられた部分を形成するように前記導電層をパターン化す る工程と、 前記盛り上げられた部分を含む前記導電層上に絶縁層を設ける工程と、 前記導電層の前記盛り上げられた部分の一部を露出するように前記絶縁層の一 部を選択的に除去する工程と、 を備えた電気的コンタクトを製造する方法。 2. 前記導電層は、第1の導電層を形成し、 更に、前記導電層の前記盛り上げられた部分の露出部にプログラム可能なレジ スト性材料を堆積する工程と、 前記プログラム可能なレジスト性材料に接触する第2導電層を堆積する工程を 含む、請求項1記載の方法。 3. 前記プログラム可能なレジスト性材料が、カルコゲナイド材料を含む、 請求項2記載の方法。 4. 導電層をパターン化する工程の前に、 前記導電層上に酸化物の層を形成する工程と、 離間した酸化物パターンを形成するように前記酸化物層をパターン化する工程 とを更に含む、請求項3記載の方法。 5. 前記導電層をパターン化する工程が、各酸化物パターンよりも下方で前 記第1導電層内に盛り上げられた部分が形成されるように、前記第1導電層をエ ッチングすることを含む、請求項4記載の方法。 6. 絶縁層を設ける工程が、前記盛り上げられた部分と同じ厚みに前記絶縁 層を堆積することを含み、本方法が更に、 前記盛り上げられた部分の頂部部分を露出するように前記絶縁層部分を選択的 に除去する工程を含む、請求項5記載の方法。 7. 各盛り上げられた部分にカルコゲナイド材料のパターンを形成する工程 と、カルコゲナイド材料の各パターンに第2導電層を形成する工程とを更に含む 、請求項6記載の方法。 8. Se、Te、Ge、Sb並びにこれらSe、Te、GeおよびSbのう ちの少なくとも2つの組成物から成る群から前記カルコゲナイド材料を選択した 、請求項7記載の方法。 9. 前記カルコゲナイド材料がTeaGebSb100-(a+b)の比(ここでa、 bおよびcは成分元素の総計が100%となり、a≦70、15≦b≦50とな る原子%である)でTe、GeおよびSbを含む、請求項8記載の方法。 10. 第1表面を有する基板と、 前記第1表面に設けられた、盛り上げられた部分を有する導電層と、 前記第1導電層に重なり、前記盛り上げられた部分の一部を露出する絶縁層と 、 前記第1導電層の前記盛り上げられた部分の前記露出した部分に接触するよう に設けられた、プログラム可能なレジスト性材料の層とを含み、前記盛り上げら れた部分の前記露出した部分が前記第1導電層の前記盛り上げられた部分の他の 部分よりも狭くなっている集積回路。 11. 前記導電層の前記盛り上げられた部分の高さが前記絶縁層の厚みにほ ぼ等しい、請求項10記載の集積回路。 12. 前記プログラム可能なレジスト性材料がカルコゲナイドを含む、請求 項10記載の集積回路。 13. 前記導電層が第1の導電層であり、前記回路がプログラム可能なレジ スト性材料の前記層に結合された第2導電層を更に含む、請求項10記載の集積 回路。 14. 前記導電層の前記盛り上げられた部分がほぼ切頭円錐形となっている 、請求項10記載の集積回路。 15. Se、Te、Ge、Sb並びにこれらSe、Te、GeおよびSbの うちの少なくとも2つの組成物から成る群から前記カルコゲナイド材料を選択し た、請求項12記載の集積回路。 16. 前記カルコゲナイド材料がTeaGebSb100-(a+b)の比(ここでa 、bおよびcは成分元素の総計が100%となり、a≦70、15≦b≦50と なる原子%である)でTe、GeおよびSbを含む、請求項12記載の集積回路 。 17. 40≦a≦60であり、17≦b≦44である、請求項16記載の集 積回路。 18. 前記プログラム可能なレジスト性材料層を通過する総電流が2ミリア ンペアである、請求項10記載の集積回路。 19. 第1部分および第2部分を有し、この第2部分から第1部分への方向 に連続的に幅が狭くなっている第1電極と、 前記第1電極に接触するように設けられたプログラム可能なレジスト性材料の 層と、 プログラム可能なレジスト性材料の前記層に結合された第2電極とを含む集積 回路。 20. 前記プログラム可能なレジスト性材料がカルコゲナイドを含む、請求 項19記載の集積回路。 21. 前記プログラム可能なレジスト性材料および前記第2電極を囲む絶縁 材料の層を更に含む、請求項19記載の集積回路。 22. プログラム可能なレジスト性材料の前記層が切頭円錐形形状である、 請求項19記載の集積回路。 23. 複数のメモリセルを含み、前記各メモリセルが、 第1部分および第2部分を有し、この第2部分から第1部分への方向に連続的 に幅が狭くなっている第1電極と、 前記第1電極に接触するように設けられたプログラム可能なレジスト性材料の 層と、 プログラム可能なレジスト性材料の前記層に結合された第2電極とを含む集積 回路メモリ。 24. 前記プログラム可能なレジスト性材料がカルコゲナイドを含む、請求 項23記載の集積回路メモリ。 25. 各メモリセルが、前記プログラム可能なレジスト性材料および前記第 2電極を囲む絶縁材料の層を更に含む、請求項23記載の集積回路メモリ。 26. 前記第1の電極が切頭円錐形形状である、請求項23記載の集積回路 メモリ。 27. 半導体基板に導電層を塗布する工程と、 前記導電層に離間したパターンを有する酸化物層を塗布する工程と、 各酸化物層パターンの下方にて、前記導電層内に先端部分が形成されるよう、 前記導電層をエッチングする工程と、 前記導電層の先端部分をカバーするように前記導電層上に絶縁層を堆積する工 程と、 前記導電層の先端部分の頂部部分を露出するように前記絶縁層の一部を選択的 に除去する工程とを備えた、集積回路内に導電路を製造する方法。 28. 導電路の各先端部分の高さとほぼ同じ厚みに前記絶縁層を堆積する、 請求項27記載の方法。 29. 前記除去する工程が、先端部分の頂部部分を露出するように、化学的 機械的な研磨を行うことを含む、請求項28記載の方法。 30. 基板に第1導電層を塗布する工程と、 前記第1導電層に、複数の離間したパターンを含む酸化物層を塗布する工程と 、酸化物層パターンの各々の下方に先端部分が形成されるように、前記第1導電 層をエッチングする工程と、 前記酸化物層を除去する工程と、 前記先端部分を含む前記第1導電層に絶縁層を堆積する工程と、 先端部分の頂部表面を露出するように、前記絶縁層の一部を除去する工程と、 各先端部分の頂部表面にカルコゲナイド材料の層を塗布する工程と、 カルコゲナイド材料の各層に第2導電材料を塗布する工程とを含む、カルコゲ ナイドメモリセルを製造する方法。 31. Se、Te、Ge、Sb並びにこれらSe、Te、GeおよびSbの うちの少なくとも2つの組成物から成る群から前記カルコゲナイド材料を選択し た、請求項30記載のカルコゲナイドメモリセルを製造する方法。 32. 前記カルコゲナイド材料がTeaGebSb100-(a+b)の比(ここでa 、bおよびcは成分元素の総計が100%となり、a≦70、15≦b≦50と なる原子%である)でTe、GeおよびSbを含む、請求項31記載のカルコゲ ナイドメモリセルを製造する方法。 33. 40≦a≦60であり、17≦b≦44である、請求項32記載のカ ルコゲナイドメモリセルを製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/724,816 US6147395A (en) | 1996-10-02 | 1996-10-02 | Method for fabricating a small area of contact between electrodes |
US08/724,816 | 1996-10-02 | ||
PCT/US1997/017711 WO1998036446A2 (en) | 1996-10-02 | 1997-10-02 | A method for fabricating a small area of contact between electrodes |
Publications (3)
Publication Number | Publication Date |
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JP2001504279A true JP2001504279A (ja) | 2001-03-27 |
JP2001504279A5 JP2001504279A5 (ja) | 2005-07-14 |
JP4747231B2 JP4747231B2 (ja) | 2011-08-17 |
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JP53133898A Expired - Fee Related JP4747231B2 (ja) | 1996-10-02 | 1997-10-02 | 電極間に小面積のコンタクトを製造するための方法 |
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US (12) | US6147395A (ja) |
EP (3) | EP1296377B1 (ja) |
JP (1) | JP4747231B2 (ja) |
KR (1) | KR100466675B1 (ja) |
AT (3) | ATE248439T1 (ja) |
AU (1) | AU8052598A (ja) |
DE (3) | DE69739678D1 (ja) |
WO (1) | WO1998036446A2 (ja) |
Cited By (11)
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JP2002540605A (ja) * | 1999-03-25 | 2002-11-26 | オヴォニクス インコーポレイテッド | 改善された接合を有する電気的にプログラム可能なメモリ素子 |
JP2003100991A (ja) * | 2001-09-20 | 2003-04-04 | Ricoh Co Ltd | 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法 |
US6844564B2 (en) | 2001-12-12 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
JP2007158344A (ja) * | 2005-12-02 | 2007-06-21 | Samsung Electronics Co Ltd | 金属層−絶縁層−金属層構造を備えるストレージノード、及び、そのストレージノードを備える不揮発性メモリ素子及びその動作方法 |
JP2008103727A (ja) * | 2006-10-18 | 2008-05-01 | Samsung Electronics Co Ltd | 下部電極コンタクト層と相変化層とが広い接触面積を持つ相変化メモリ素子及びその製造方法 |
JP2008529291A (ja) * | 2005-02-01 | 2008-07-31 | キモンダ アクチエンゲゼルシャフト | ピラー相変化メモリセル |
JP2009105082A (ja) * | 2007-10-19 | 2009-05-14 | Elpida Memory Inc | 縦型相変化メモリ装置の製造方法 |
JP2009212202A (ja) * | 2008-03-03 | 2009-09-17 | Elpida Memory Inc | 相変化メモリ装置およびその製造方法 |
JP2009218259A (ja) * | 2008-03-07 | 2009-09-24 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
JP2009246309A (ja) * | 2008-03-31 | 2009-10-22 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
JP2013048251A (ja) * | 2005-08-15 | 2013-03-07 | Micron Technology Inc | 可変抵抗絶縁層を用いたメモリ素子及びそれを有するプロセッサシステム |
Families Citing this family (296)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147395A (en) | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
US6617192B1 (en) * | 1997-10-01 | 2003-09-09 | Ovonyx, Inc. | Electrically programmable memory element with multi-regioned contact |
US6969866B1 (en) * | 1997-10-01 | 2005-11-29 | Ovonyx, Inc. | Electrically programmable memory element with improved contacts |
US6242304B1 (en) * | 1998-05-29 | 2001-06-05 | Micron Technology, Inc. | Method and structure for textured surfaces in floating gate tunneling oxide devices |
US6943365B2 (en) * | 1999-03-25 | 2005-09-13 | Ovonyx, Inc. | Electrically programmable memory element with reduced area of contact and method for making same |
US6750079B2 (en) * | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
US6391658B1 (en) * | 1999-10-26 | 2002-05-21 | International Business Machines Corporation | Formation of arrays of microelectronic elements |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US6649928B2 (en) * | 2000-12-13 | 2003-11-18 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
US6534781B2 (en) * | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
US6727192B2 (en) * | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6734455B2 (en) * | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US6514788B2 (en) * | 2001-05-29 | 2003-02-04 | Bae Systems Information And Electronic Systems Integration Inc. | Method for manufacturing contacts for a Chalcogenide memory device |
US6709958B2 (en) | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6448576B1 (en) * | 2001-08-30 | 2002-09-10 | Bae Systems Information And Electronic Systems Integration, Inc. | Programmable chalcogenide fuse within a semiconductor device |
US6800563B2 (en) * | 2001-10-11 | 2004-10-05 | Ovonyx, Inc. | Forming tapered lower electrode phase-change memories |
US6545903B1 (en) * | 2001-12-17 | 2003-04-08 | Texas Instruments Incorporated | Self-aligned resistive plugs for forming memory cell with phase change material |
US6512241B1 (en) * | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US6579760B1 (en) * | 2002-03-28 | 2003-06-17 | Macronix International Co., Ltd. | Self-aligned, programmable phase change memory |
US6670628B2 (en) * | 2002-04-04 | 2003-12-30 | Hewlett-Packard Company, L.P. | Low heat loss and small contact area composite electrode for a phase change media memory device |
CN1639868A (zh) | 2002-04-09 | 2005-07-13 | 松下电器产业株式会社 | 非易失性存储器及其制造方法 |
US6605821B1 (en) * | 2002-05-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Phase change material electronic memory structure and method for forming |
TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
US7186569B2 (en) * | 2002-08-02 | 2007-03-06 | Unity Semiconductor Corporation | Conductive memory stack with sidewall |
US6864503B2 (en) * | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US6850432B2 (en) | 2002-08-20 | 2005-02-01 | Macronix International Co., Ltd. | Laser programmable electrically readable phase-change memory method and device |
KR100448908B1 (ko) * | 2002-09-03 | 2004-09-16 | 삼성전자주식회사 | 상전이 기억 소자 구조 및 그 제조 방법 |
US7149155B2 (en) * | 2002-09-20 | 2006-12-12 | Hewlett-Packard Development Company, L.P. | Channeled dielectric re-recordable data storage medium |
KR100448895B1 (ko) * | 2002-10-25 | 2004-09-16 | 삼성전자주식회사 | 상변환 기억셀들 및 그 제조방법들 |
JP4928045B2 (ja) * | 2002-10-31 | 2012-05-09 | 大日本印刷株式会社 | 相変化型メモリ素子およびその製造方法 |
KR100481866B1 (ko) * | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
KR100481865B1 (ko) * | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
KR20040042387A (ko) * | 2002-11-14 | 2004-05-20 | 엘지전자 주식회사 | 탐침형 정보 저장 장치용 기록매체의 제조방법 |
DE10255117A1 (de) * | 2002-11-26 | 2004-06-17 | Infineon Technologies Ag | Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung |
US7589343B2 (en) * | 2002-12-13 | 2009-09-15 | Intel Corporation | Memory and access device and method therefor |
US6744088B1 (en) * | 2002-12-13 | 2004-06-01 | Intel Corporation | Phase change memory device on a planar composite layer |
US7323734B2 (en) * | 2003-02-25 | 2008-01-29 | Samsung Electronics Co., Ltd. | Phase changeable memory cells |
KR100560659B1 (ko) * | 2003-03-21 | 2006-03-16 | 삼성전자주식회사 | 상변화 기억 소자 및 그 제조 방법 |
KR100504698B1 (ko) * | 2003-04-02 | 2005-08-02 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
US6927074B2 (en) * | 2003-05-21 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Asymmetric memory cell |
KR100979710B1 (ko) * | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
US7067865B2 (en) * | 2003-06-06 | 2006-06-27 | Macronix International Co., Ltd. | High density chalcogenide memory cells |
US6838692B1 (en) * | 2003-06-23 | 2005-01-04 | Macronix International Co., Ltd. | Chalcogenide memory device with multiple bits per cell |
JP2006528432A (ja) * | 2003-07-21 | 2006-12-14 | ウナクシス ユーエスエイ、インコーポレイテッド | カルコゲニド記憶素子を製造するためのエッチング法 |
US20050018526A1 (en) * | 2003-07-21 | 2005-01-27 | Heon Lee | Phase-change memory device and manufacturing method thereof |
US7280456B2 (en) * | 2003-07-28 | 2007-10-09 | Intel Corporation | Methods and apparatus for determining the state of a variable resistive layer in a material stack |
DE10349750A1 (de) * | 2003-10-23 | 2005-05-25 | Commissariat à l'Energie Atomique | Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein |
US7881133B2 (en) | 2003-11-11 | 2011-02-01 | Samsung Electronics Co., Ltd. | Method of managing a flash memory and the flash memory |
DE10356285A1 (de) * | 2003-11-28 | 2005-06-30 | Infineon Technologies Ag | Integrierter Halbleiterspeicher und Verfahren zum Herstellen eines integrierten Halbleiterspeichers |
US6949435B2 (en) | 2003-12-08 | 2005-09-27 | Sharp Laboratories Of America, Inc. | Asymmetric-area memory cell |
US7057923B2 (en) * | 2003-12-10 | 2006-06-06 | International Buisness Machines Corp. | Field emission phase change diode memory |
US7223693B2 (en) * | 2003-12-12 | 2007-05-29 | Samsung Electronics Co., Ltd. | Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same |
US7265050B2 (en) * | 2003-12-12 | 2007-09-04 | Samsung Electronics Co., Ltd. | Methods for fabricating memory devices using sacrificial layers |
US7291556B2 (en) * | 2003-12-12 | 2007-11-06 | Samsung Electronics Co., Ltd. | Method for forming small features in microelectronic devices using sacrificial layers |
US20070284743A1 (en) * | 2003-12-12 | 2007-12-13 | Samsung Electronics Co., Ltd. | Fabricating Memory Devices Using Sacrificial Layers and Memory Devices Fabricated by Same |
KR100568511B1 (ko) * | 2003-12-30 | 2006-04-07 | 삼성전자주식회사 | 상전이막 패턴을 갖는 반도체 장치들 및 그 제조방법들 |
US7038230B2 (en) * | 2004-01-06 | 2006-05-02 | Macronix Internation Co., Ltd. | Horizontal chalcogenide element defined by a pad for use in solid-state memories |
US6936840B2 (en) | 2004-01-30 | 2005-08-30 | International Business Machines Corporation | Phase-change memory cell and method of fabricating the phase-change memory cell |
DE102004007633B4 (de) * | 2004-02-17 | 2010-10-14 | Qimonda Ag | Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle |
KR100733147B1 (ko) * | 2004-02-25 | 2007-06-27 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
US7482616B2 (en) * | 2004-05-27 | 2009-01-27 | Samsung Electronics Co., Ltd. | Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
US20050263801A1 (en) * | 2004-05-27 | 2005-12-01 | Jae-Hyun Park | Phase-change memory device having a barrier layer and manufacturing method |
DE102005025209B4 (de) * | 2004-05-27 | 2011-01-13 | Samsung Electronics Co., Ltd., Suwon | Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements |
US7411208B2 (en) * | 2004-05-27 | 2008-08-12 | Samsung Electronics Co., Ltd. | Phase-change memory device having a barrier layer and manufacturing method |
US7009694B2 (en) * | 2004-05-28 | 2006-03-07 | International Business Machines Corporation | Indirect switching and sensing of phase change memory cells |
KR100642634B1 (ko) * | 2004-06-29 | 2006-11-10 | 삼성전자주식회사 | 게이트 상전이막 패턴을 갖는 피이. 램들 및 그 형성방법들 |
DE102004031742A1 (de) * | 2004-06-30 | 2006-01-19 | Infineon Technologies Ag | Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einem Halbleiterbauelement |
KR100672936B1 (ko) * | 2004-07-01 | 2007-01-24 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
KR100615598B1 (ko) * | 2004-07-19 | 2006-08-25 | 삼성전자주식회사 | 평탄화 절연막을 갖는 반도체 장치들 및 그 형성방법들 |
KR100655796B1 (ko) * | 2004-08-17 | 2006-12-11 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
US20060108667A1 (en) * | 2004-11-22 | 2006-05-25 | Macronix International Co., Ltd. | Method for manufacturing a small pin on integrated circuits or other devices |
US7202493B2 (en) * | 2004-11-30 | 2007-04-10 | Macronix International Co., Inc. | Chalcogenide memory having a small active region |
KR100827653B1 (ko) * | 2004-12-06 | 2008-05-07 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
US7220983B2 (en) * | 2004-12-09 | 2007-05-22 | Macronix International Co., Ltd. | Self-aligned small contact phase-change memory method and device |
EP1677371A1 (en) | 2004-12-30 | 2006-07-05 | STMicroelectronics S.r.l. | Dual resistance heater for phase change devices and manufacturing method thereof |
EP1677372B1 (en) * | 2004-12-30 | 2008-05-14 | STMicroelectronics S.r.l. | Phase change memory and manufacturing method thereof |
US7709334B2 (en) | 2005-12-09 | 2010-05-04 | Macronix International Co., Ltd. | Stacked non-volatile memory device and methods for fabricating the same |
KR100688532B1 (ko) | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | 텔루르 전구체, 이를 이용하여 제조된 Te-함유 칼코게나이드(chalcogenide) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자 |
DE102005014645B4 (de) * | 2005-03-31 | 2007-07-26 | Infineon Technologies Ag | Anschlusselektrode für Phasen-Wechsel-Material, zugehöriges Phasen-Wechsel-Speicherelement sowie zugehöriges Herstellungsverfahren |
US7488967B2 (en) * | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
US7973301B2 (en) * | 2005-05-20 | 2011-07-05 | Qimonda Ag | Low power phase change memory cell with large read signal |
CN101180684B (zh) * | 2005-05-24 | 2011-03-30 | Nxp股份有限公司 | 反熔丝存储装置 |
KR100842903B1 (ko) * | 2005-06-10 | 2008-07-02 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US7514288B2 (en) * | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Manufacturing methods for thin film fuse phase change ram |
US7514367B2 (en) * | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Method for manufacturing a narrow structure on an integrated circuit |
US8237140B2 (en) * | 2005-06-17 | 2012-08-07 | Macronix International Co., Ltd. | Self-aligned, embedded phase change RAM |
US7238994B2 (en) * | 2005-06-17 | 2007-07-03 | Macronix International Co., Ltd. | Thin film plate phase change ram circuit and manufacturing method |
US7598512B2 (en) * | 2005-06-17 | 2009-10-06 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
US7321130B2 (en) * | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
US7696503B2 (en) * | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
US7534647B2 (en) | 2005-06-17 | 2009-05-19 | Macronix International Co., Ltd. | Damascene phase change RAM and manufacturing method |
US7397060B2 (en) * | 2005-11-14 | 2008-07-08 | Macronix International Co., Ltd. | Pipe shaped phase change memory |
US20070111429A1 (en) * | 2005-11-14 | 2007-05-17 | Macronix International Co., Ltd. | Method of manufacturing a pipe shaped phase change memory |
US7786460B2 (en) * | 2005-11-15 | 2010-08-31 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
US7394088B2 (en) * | 2005-11-15 | 2008-07-01 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
US7635855B2 (en) | 2005-11-15 | 2009-12-22 | Macronix International Co., Ltd. | I-shaped phase change memory cell |
US7450411B2 (en) | 2005-11-15 | 2008-11-11 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
US7414258B2 (en) | 2005-11-16 | 2008-08-19 | Macronix International Co., Ltd. | Spacer electrode small pin phase change memory RAM and manufacturing method |
US7507986B2 (en) | 2005-11-21 | 2009-03-24 | Macronix International Co., Ltd. | Thermal isolation for an active-sidewall phase change memory cell |
US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
US7829876B2 (en) | 2005-11-21 | 2010-11-09 | Macronix International Co., Ltd. | Vacuum cell thermal isolation for a phase change memory device |
US7479649B2 (en) | 2005-11-21 | 2009-01-20 | Macronix International Co., Ltd. | Vacuum jacketed electrode for phase change memory element |
TWI318003B (en) | 2005-11-21 | 2009-12-01 | Macronix Int Co Ltd | Air cell thermal isolation for a memory array formed of a programmable resistive material |
US7599217B2 (en) | 2005-11-22 | 2009-10-06 | Macronix International Co., Ltd. | Memory cell device and manufacturing method |
US7688619B2 (en) * | 2005-11-28 | 2010-03-30 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
US7459717B2 (en) * | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
US7521364B2 (en) | 2005-12-02 | 2009-04-21 | Macronix Internation Co., Ltd. | Surface topology improvement method for plug surface areas |
US7605079B2 (en) * | 2005-12-05 | 2009-10-20 | Macronix International Co., Ltd. | Manufacturing method for phase change RAM with electrode layer process |
US7642539B2 (en) * | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
GB2433647B (en) | 2005-12-20 | 2008-05-28 | Univ Southampton | Phase change memory materials, devices and methods |
US7531825B2 (en) | 2005-12-27 | 2009-05-12 | Macronix International Co., Ltd. | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
US20070158632A1 (en) * | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
US7595218B2 (en) | 2006-01-09 | 2009-09-29 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7560337B2 (en) | 2006-01-09 | 2009-07-14 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7741636B2 (en) * | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7825396B2 (en) * | 2006-01-11 | 2010-11-02 | Macronix International Co., Ltd. | Self-align planerized bottom electrode phase change memory and manufacturing method |
US7432206B2 (en) | 2006-01-24 | 2008-10-07 | Macronix International Co., Ltd. | Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram |
KR100679270B1 (ko) * | 2006-01-27 | 2007-02-06 | 삼성전자주식회사 | 상변화 메모리 소자 및 그 제조방법 |
US7456421B2 (en) * | 2006-01-30 | 2008-11-25 | Macronix International Co., Ltd. | Vertical side wall active pin structures in a phase change memory and manufacturing methods |
US7956358B2 (en) | 2006-02-07 | 2011-06-07 | Macronix International Co., Ltd. | I-shaped phase change memory cell with thermal isolation |
US7569430B2 (en) * | 2006-02-13 | 2009-08-04 | Samsung Electronics Co., Ltd. | Phase changeable structure and method of forming the same |
US7579611B2 (en) * | 2006-02-14 | 2009-08-25 | International Business Machines Corporation | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide |
US7910907B2 (en) | 2006-03-15 | 2011-03-22 | Macronix International Co., Ltd. | Manufacturing method for pipe-shaped electrode phase change memory |
US7515455B2 (en) * | 2006-03-17 | 2009-04-07 | Qimonda North America Corp. | High density memory array for low power application |
US7554144B2 (en) * | 2006-04-17 | 2009-06-30 | Macronix International Co., Ltd. | Memory device and manufacturing method |
JP4777820B2 (ja) * | 2006-04-20 | 2011-09-21 | エルピーダメモリ株式会社 | 半導体記憶装置およびその製造方法 |
US7928421B2 (en) | 2006-04-21 | 2011-04-19 | Macronix International Co., Ltd. | Phase change memory cell with vacuum spacer |
US8129706B2 (en) * | 2006-05-05 | 2012-03-06 | Macronix International Co., Ltd. | Structures and methods of a bistable resistive random access memory |
US7608848B2 (en) * | 2006-05-09 | 2009-10-27 | Macronix International Co., Ltd. | Bridge resistance random access memory device with a singular contact structure |
US7649242B2 (en) * | 2006-05-19 | 2010-01-19 | Infineon Technologies Ag | Programmable resistive memory cell with a programmable resistance layer |
US7423300B2 (en) | 2006-05-24 | 2008-09-09 | Macronix International Co., Ltd. | Single-mask phase change memory element |
CN100492695C (zh) * | 2006-05-26 | 2009-05-27 | 中国科学院上海微系统与信息技术研究所 | 用硅湿法刻蚀和键合工艺制备相变存储器的方法 |
KR100748557B1 (ko) | 2006-05-26 | 2007-08-10 | 삼성전자주식회사 | 상변화 메모리 장치 |
US7732800B2 (en) * | 2006-05-30 | 2010-06-08 | Macronix International Co., Ltd. | Resistor random access memory cell with L-shaped electrode |
US7820997B2 (en) * | 2006-05-30 | 2010-10-26 | Macronix International Co., Ltd. | Resistor random access memory cell with reduced active area and reduced contact areas |
US7696506B2 (en) | 2006-06-27 | 2010-04-13 | Macronix International Co., Ltd. | Memory cell with memory material insulation and manufacturing method |
US7785920B2 (en) | 2006-07-12 | 2010-08-31 | Macronix International Co., Ltd. | Method for making a pillar-type phase change memory element |
KR100741467B1 (ko) * | 2006-07-12 | 2007-07-20 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
KR100749740B1 (ko) * | 2006-08-01 | 2007-08-17 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
US7442603B2 (en) * | 2006-08-16 | 2008-10-28 | Macronix International Co., Ltd. | Self-aligned structure and method for confining a melting point in a resistor random access memory |
US8003972B2 (en) | 2006-08-30 | 2011-08-23 | Micron Technology, Inc. | Bottom electrode geometry for phase change memory |
US7772581B2 (en) | 2006-09-11 | 2010-08-10 | Macronix International Co., Ltd. | Memory device having wide area phase change element and small electrode contact area |
US7504653B2 (en) | 2006-10-04 | 2009-03-17 | Macronix International Co., Ltd. | Memory cell device with circumferentially-extending memory element |
KR101270435B1 (ko) | 2006-10-09 | 2013-06-03 | 주식회사 원익아이피에스 | 상변화 메모리 제조방법 |
US20080090324A1 (en) * | 2006-10-12 | 2008-04-17 | Lee Jong-Won S | Forming sublithographic heaters for phase change memories |
US7510929B2 (en) * | 2006-10-18 | 2009-03-31 | Macronix International Co., Ltd. | Method for making memory cell device |
US7616472B2 (en) * | 2006-10-23 | 2009-11-10 | Macronix International Co., Ltd. | Method and apparatus for non-volatile multi-bit memory |
US7388771B2 (en) | 2006-10-24 | 2008-06-17 | Macronix International Co., Ltd. | Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states |
US20080094885A1 (en) * | 2006-10-24 | 2008-04-24 | Macronix International Co., Ltd. | Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States |
US8106376B2 (en) * | 2006-10-24 | 2012-01-31 | Macronix International Co., Ltd. | Method for manufacturing a resistor random access memory with a self-aligned air gap insulator |
US7863655B2 (en) | 2006-10-24 | 2011-01-04 | Macronix International Co., Ltd. | Phase change memory cells with dual access devices |
US7527985B2 (en) * | 2006-10-24 | 2009-05-05 | Macronix International Co., Ltd. | Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas |
KR100827661B1 (ko) * | 2006-10-31 | 2008-05-07 | 삼성전자주식회사 | 이중의 하부 전극을 갖는 상변화 기억소자 및 그 제조방법 |
US8067762B2 (en) | 2006-11-16 | 2011-11-29 | Macronix International Co., Ltd. | Resistance random access memory structure for enhanced retention |
US7682868B2 (en) | 2006-12-06 | 2010-03-23 | Macronix International Co., Ltd. | Method for making a keyhole opening during the manufacture of a memory cell |
US20080137400A1 (en) * | 2006-12-06 | 2008-06-12 | Macronix International Co., Ltd. | Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same |
US7473576B2 (en) * | 2006-12-06 | 2009-01-06 | Macronix International Co., Ltd. | Method for making a self-converged void and bottom electrode for memory cell |
US7476587B2 (en) * | 2006-12-06 | 2009-01-13 | Macronix International Co., Ltd. | Method for making a self-converged memory material element for memory cell |
US7697316B2 (en) * | 2006-12-07 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level cell resistance random access memory with metal oxides |
US7903447B2 (en) | 2006-12-13 | 2011-03-08 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on programmable resistive memory cell |
US8344347B2 (en) | 2006-12-15 | 2013-01-01 | Macronix International Co., Ltd. | Multi-layer electrode structure |
US7718989B2 (en) | 2006-12-28 | 2010-05-18 | Macronix International Co., Ltd. | Resistor random access memory cell device |
US7515461B2 (en) * | 2007-01-05 | 2009-04-07 | Macronix International Co., Ltd. | Current compliant sensing architecture for multilevel phase change memory |
US7433226B2 (en) | 2007-01-09 | 2008-10-07 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell |
US7440315B2 (en) | 2007-01-09 | 2008-10-21 | Macronix International Co., Ltd. | Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell |
US7667220B2 (en) * | 2007-01-19 | 2010-02-23 | Macronix International Co., Ltd. | Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method |
US7535756B2 (en) | 2007-01-31 | 2009-05-19 | Macronix International Co., Ltd. | Method to tighten set distribution for PCRAM |
US7663135B2 (en) | 2007-01-31 | 2010-02-16 | Macronix International Co., Ltd. | Memory cell having a side electrode contact |
US7619311B2 (en) | 2007-02-02 | 2009-11-17 | Macronix International Co., Ltd. | Memory cell device with coplanar electrode surface and method |
US7701759B2 (en) * | 2007-02-05 | 2010-04-20 | Macronix International Co., Ltd. | Memory cell device and programming methods |
US7483292B2 (en) * | 2007-02-07 | 2009-01-27 | Macronix International Co., Ltd. | Memory cell with separate read and program paths |
US7463512B2 (en) | 2007-02-08 | 2008-12-09 | Macronix International Co., Ltd. | Memory element with reduced-current phase change element |
US8138028B2 (en) * | 2007-02-12 | 2012-03-20 | Macronix International Co., Ltd | Method for manufacturing a phase change memory device with pillar bottom electrode |
US7884343B2 (en) * | 2007-02-14 | 2011-02-08 | Macronix International Co., Ltd. | Phase change memory cell with filled sidewall memory element and method for fabricating the same |
US8008643B2 (en) * | 2007-02-21 | 2011-08-30 | Macronix International Co., Ltd. | Phase change memory cell with heater and method for fabricating the same |
US7619237B2 (en) * | 2007-02-21 | 2009-11-17 | Macronix International Co., Ltd. | Programmable resistive memory cell with self-forming gap |
US7956344B2 (en) * | 2007-02-27 | 2011-06-07 | Macronix International Co., Ltd. | Memory cell with memory element contacting ring-shaped upper end of bottom electrode |
US7786461B2 (en) * | 2007-04-03 | 2010-08-31 | Macronix International Co., Ltd. | Memory structure with reduced-size memory element between memory material portions |
US7859036B2 (en) * | 2007-04-05 | 2010-12-28 | Micron Technology, Inc. | Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
US8610098B2 (en) | 2007-04-06 | 2013-12-17 | Macronix International Co., Ltd. | Phase change memory bridge cell with diode isolation device |
US7755076B2 (en) * | 2007-04-17 | 2010-07-13 | Macronix International Co., Ltd. | 4F2 self align side wall active phase change memory |
US7569844B2 (en) * | 2007-04-17 | 2009-08-04 | Macronix International Co., Ltd. | Memory cell sidewall contacting side electrode |
US7483316B2 (en) * | 2007-04-24 | 2009-01-27 | Macronix International Co., Ltd. | Method and apparatus for refreshing programmable resistive memory |
US8373148B2 (en) * | 2007-04-26 | 2013-02-12 | Spansion Llc | Memory device with improved performance |
US8513637B2 (en) | 2007-07-13 | 2013-08-20 | Macronix International Co., Ltd. | 4F2 self align fin bottom electrodes FET drive phase change memory |
US7777215B2 (en) * | 2007-07-20 | 2010-08-17 | Macronix International Co., Ltd. | Resistive memory structure with buffer layer |
US7884342B2 (en) | 2007-07-31 | 2011-02-08 | Macronix International Co., Ltd. | Phase change memory bridge cell |
US7729161B2 (en) | 2007-08-02 | 2010-06-01 | Macronix International Co., Ltd. | Phase change memory with dual word lines and source lines and method of operating same |
US9018615B2 (en) | 2007-08-03 | 2015-04-28 | Macronix International Co., Ltd. | Resistor random access memory structure having a defined small area of electrical contact |
US7642125B2 (en) | 2007-09-14 | 2010-01-05 | Macronix International Co., Ltd. | Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
US8178386B2 (en) | 2007-09-14 | 2012-05-15 | Macronix International Co., Ltd. | Phase change memory cell array with self-converged bottom electrode and method for manufacturing |
US7551473B2 (en) * | 2007-10-12 | 2009-06-23 | Macronix International Co., Ltd. | Programmable resistive memory with diode structure |
US7919766B2 (en) * | 2007-10-22 | 2011-04-05 | Macronix International Co., Ltd. | Method for making self aligning pillar memory cell device |
US7804083B2 (en) | 2007-11-14 | 2010-09-28 | Macronix International Co., Ltd. | Phase change memory cell including a thermal protect bottom electrode and manufacturing methods |
US7786464B2 (en) * | 2007-11-20 | 2010-08-31 | Infineon Technologies Ag | Integrated circuit having dielectric layer including nanocrystals |
US7646631B2 (en) | 2007-12-07 | 2010-01-12 | Macronix International Co., Ltd. | Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods |
US7639527B2 (en) | 2008-01-07 | 2009-12-29 | Macronix International Co., Ltd. | Phase change memory dynamic resistance test and manufacturing methods |
US7879643B2 (en) | 2008-01-18 | 2011-02-01 | Macronix International Co., Ltd. | Memory cell with memory element contacting an inverted T-shaped bottom electrode |
US7879645B2 (en) | 2008-01-28 | 2011-02-01 | Macronix International Co., Ltd. | Fill-in etching free pore device |
US8158965B2 (en) | 2008-02-05 | 2012-04-17 | Macronix International Co., Ltd. | Heating center PCRAM structure and methods for making |
US7491573B1 (en) | 2008-03-13 | 2009-02-17 | International Business Machines Corporation | Phase change materials for applications that require fast switching and high endurance |
US8084842B2 (en) | 2008-03-25 | 2011-12-27 | Macronix International Co., Ltd. | Thermally stabilized electrode structure |
US8030634B2 (en) | 2008-03-31 | 2011-10-04 | Macronix International Co., Ltd. | Memory array with diode driver and method for fabricating the same |
US7825398B2 (en) | 2008-04-07 | 2010-11-02 | Macronix International Co., Ltd. | Memory cell having improved mechanical stability |
US7791057B2 (en) | 2008-04-22 | 2010-09-07 | Macronix International Co., Ltd. | Memory cell having a buried phase change region and method for fabricating the same |
US8077505B2 (en) | 2008-05-07 | 2011-12-13 | Macronix International Co., Ltd. | Bipolar switching of phase change device |
US7701750B2 (en) * | 2008-05-08 | 2010-04-20 | Macronix International Co., Ltd. | Phase change device having two or more substantial amorphous regions in high resistance state |
US8415651B2 (en) | 2008-06-12 | 2013-04-09 | Macronix International Co., Ltd. | Phase change memory cell having top and bottom sidewall contacts |
US8134857B2 (en) | 2008-06-27 | 2012-03-13 | Macronix International Co., Ltd. | Methods for high speed reading operation of phase change memory and device employing same |
US7932506B2 (en) | 2008-07-22 | 2011-04-26 | Macronix International Co., Ltd. | Fully self-aligned pore-type memory cell having diode access device |
US7903457B2 (en) | 2008-08-19 | 2011-03-08 | Macronix International Co., Ltd. | Multiple phase change materials in an integrated circuit for system on a chip application |
US7719913B2 (en) | 2008-09-12 | 2010-05-18 | Macronix International Co., Ltd. | Sensing circuit for PCRAM applications |
US8324605B2 (en) | 2008-10-02 | 2012-12-04 | Macronix International Co., Ltd. | Dielectric mesh isolated phase change structure for phase change memory |
US8344348B2 (en) * | 2008-10-02 | 2013-01-01 | Ovonyx, Inc. | Memory device |
US7897954B2 (en) | 2008-10-10 | 2011-03-01 | Macronix International Co., Ltd. | Dielectric-sandwiched pillar memory device |
US7897955B2 (en) * | 2008-11-03 | 2011-03-01 | Seagate Technology Llc | Programmable resistive memory cell with filament placement structure |
US8097870B2 (en) | 2008-11-05 | 2012-01-17 | Seagate Technology Llc | Memory cell with alignment structure |
US8036014B2 (en) | 2008-11-06 | 2011-10-11 | Macronix International Co., Ltd. | Phase change memory program method without over-reset |
US8907316B2 (en) | 2008-11-07 | 2014-12-09 | Macronix International Co., Ltd. | Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions |
US8664689B2 (en) | 2008-11-07 | 2014-03-04 | Macronix International Co., Ltd. | Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions |
US7869270B2 (en) * | 2008-12-29 | 2011-01-11 | Macronix International Co., Ltd. | Set algorithm for phase change memory cell |
US8089137B2 (en) | 2009-01-07 | 2012-01-03 | Macronix International Co., Ltd. | Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method |
US8107283B2 (en) | 2009-01-12 | 2012-01-31 | Macronix International Co., Ltd. | Method for setting PCRAM devices |
US8030635B2 (en) | 2009-01-13 | 2011-10-04 | Macronix International Co., Ltd. | Polysilicon plug bipolar transistor for phase change memory |
US8064247B2 (en) * | 2009-01-14 | 2011-11-22 | Macronix International Co., Ltd. | Rewritable memory device based on segregation/re-absorption |
US8933536B2 (en) | 2009-01-22 | 2015-01-13 | Macronix International Co., Ltd. | Polysilicon pillar bipolar transistor with self-aligned memory element |
US8084760B2 (en) | 2009-04-20 | 2011-12-27 | Macronix International Co., Ltd. | Ring-shaped electrode and manufacturing method for same |
US8173987B2 (en) | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US8829646B2 (en) * | 2009-04-27 | 2014-09-09 | Macronix International Co., Ltd. | Integrated circuit 3D memory array and manufacturing method |
US8097871B2 (en) | 2009-04-30 | 2012-01-17 | Macronix International Co., Ltd. | Low operational current phase change memory structures |
US7933139B2 (en) | 2009-05-15 | 2011-04-26 | Macronix International Co., Ltd. | One-transistor, one-resistor, one-capacitor phase change memory |
US7968876B2 (en) | 2009-05-22 | 2011-06-28 | Macronix International Co., Ltd. | Phase change memory cell having vertical channel access transistor |
US8350316B2 (en) | 2009-05-22 | 2013-01-08 | Macronix International Co., Ltd. | Phase change memory cells having vertical channel access transistor and memory plane |
US8031518B2 (en) * | 2009-06-08 | 2011-10-04 | Micron Technology, Inc. | Methods, structures, and devices for reducing operational energy in phase change memory |
US8809829B2 (en) | 2009-06-15 | 2014-08-19 | Macronix International Co., Ltd. | Phase change memory having stabilized microstructure and manufacturing method |
US8406033B2 (en) * | 2009-06-22 | 2013-03-26 | Macronix International Co., Ltd. | Memory device and method for sensing and fixing margin cells |
US8238149B2 (en) * | 2009-06-25 | 2012-08-07 | Macronix International Co., Ltd. | Methods and apparatus for reducing defect bits in phase change memory |
US8363463B2 (en) * | 2009-06-25 | 2013-01-29 | Macronix International Co., Ltd. | Phase change memory having one or more non-constant doping profiles |
US8198619B2 (en) | 2009-07-15 | 2012-06-12 | Macronix International Co., Ltd. | Phase change memory cell structure |
US8110822B2 (en) * | 2009-07-15 | 2012-02-07 | Macronix International Co., Ltd. | Thermal protect PCRAM structure and methods for making |
US7894254B2 (en) * | 2009-07-15 | 2011-02-22 | Macronix International Co., Ltd. | Refresh circuitry for phase change memory |
US8283202B2 (en) * | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Single mask adder phase change memory element |
US8283650B2 (en) | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Flat lower bottom electrode for phase change memory cell |
US8012790B2 (en) * | 2009-08-28 | 2011-09-06 | International Business Machines Corporation | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
US20110049456A1 (en) * | 2009-09-03 | 2011-03-03 | Macronix International Co., Ltd. | Phase change structure with composite doping for phase change memory |
US8064248B2 (en) * | 2009-09-17 | 2011-11-22 | Macronix International Co., Ltd. | 2T2R-1T1R mix mode phase change memory array |
US8203134B2 (en) * | 2009-09-21 | 2012-06-19 | Micron Technology, Inc. | Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same |
US8178387B2 (en) * | 2009-10-23 | 2012-05-15 | Macronix International Co., Ltd. | Methods for reducing recrystallization time for a phase change material |
US8129268B2 (en) | 2009-11-16 | 2012-03-06 | International Business Machines Corporation | Self-aligned lower bottom electrode |
US8233317B2 (en) * | 2009-11-16 | 2012-07-31 | International Business Machines Corporation | Phase change memory device suitable for high temperature operation |
US7943420B1 (en) * | 2009-11-25 | 2011-05-17 | International Business Machines Corporation | Single mask adder phase change memory element |
TWI449170B (zh) * | 2009-12-29 | 2014-08-11 | Ind Tech Res Inst | 相變化記憶體裝置及其製造方法 |
US8729521B2 (en) | 2010-05-12 | 2014-05-20 | Macronix International Co., Ltd. | Self aligned fin-type programmable memory cell |
US8310864B2 (en) | 2010-06-15 | 2012-11-13 | Macronix International Co., Ltd. | Self-aligned bit line under word line memory array |
US8728859B2 (en) | 2010-08-12 | 2014-05-20 | International Business Machines Corporation | Small footprint phase change memory cell |
US9082954B2 (en) | 2010-09-24 | 2015-07-14 | Macronix International Co., Ltd. | PCRAM with current flowing laterally relative to axis defined by electrodes |
US8395935B2 (en) | 2010-10-06 | 2013-03-12 | Macronix International Co., Ltd. | Cross-point self-aligned reduced cell size phase change memory |
US8497705B2 (en) | 2010-11-09 | 2013-07-30 | Macronix International Co., Ltd. | Phase change device for interconnection of programmable logic device |
US8467238B2 (en) | 2010-11-15 | 2013-06-18 | Macronix International Co., Ltd. | Dynamic pulse operation for phase change memory |
US20150021724A1 (en) * | 2011-04-11 | 2015-01-22 | Magsil Corporation | Self contacting bit line to mram cell |
US8497182B2 (en) | 2011-04-19 | 2013-07-30 | Macronix International Co., Ltd. | Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory |
US8598562B2 (en) * | 2011-07-01 | 2013-12-03 | Micron Technology, Inc. | Memory cell structures |
US8987700B2 (en) | 2011-12-02 | 2015-03-24 | Macronix International Co., Ltd. | Thermally confined electrode for programmable resistance memory |
KR20130142518A (ko) * | 2012-06-19 | 2013-12-30 | 에스케이하이닉스 주식회사 | 저항성 메모리 소자와 이를 포함하는 메모리 장치 및 데이터 처리 시스템 |
US8981330B2 (en) | 2012-07-16 | 2015-03-17 | Macronix International Co., Ltd. | Thermally-confined spacer PCM cells |
US9214351B2 (en) | 2013-03-12 | 2015-12-15 | Macronix International Co., Ltd. | Memory architecture of thin film 3D array |
US8916414B2 (en) | 2013-03-13 | 2014-12-23 | Macronix International Co., Ltd. | Method for making memory cell by melting phase change material in confined space |
US9444040B2 (en) | 2013-03-13 | 2016-09-13 | Microchip Technology Incorporated | Sidewall type memory cell |
US9349950B2 (en) | 2013-03-13 | 2016-05-24 | Microchip Technology Incorporated | Resistive memory cell with trench-shaped bottom electrode |
US9153777B2 (en) | 2013-06-03 | 2015-10-06 | Micron Technology, Inc. | Thermally optimized phase change memory cells and methods of fabricating the same |
US9478419B2 (en) | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
TWI549229B (zh) | 2014-01-24 | 2016-09-11 | 旺宏電子股份有限公司 | 應用於系統單晶片之記憶體裝置內的多相變化材料 |
US9318702B2 (en) * | 2014-02-19 | 2016-04-19 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
US9269606B2 (en) | 2014-02-19 | 2016-02-23 | Microchip Technology Incorporated | Spacer enabled active isolation for an integrated circuit device |
US9385313B2 (en) | 2014-02-19 | 2016-07-05 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
US9412942B2 (en) * | 2014-02-19 | 2016-08-09 | Microchip Technology Incorporated | Resistive memory cell with bottom electrode having a sloped side wall |
US10003021B2 (en) * | 2014-02-19 | 2018-06-19 | Microchip Technology Incorporated | Resistive memory cell with sloped bottom electrode |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
US9159412B1 (en) | 2014-07-15 | 2015-10-13 | Macronix International Co., Ltd. | Staggered write and verify for phase change memory |
KR102210329B1 (ko) | 2014-08-14 | 2021-02-01 | 삼성전자주식회사 | 저항 변화 메모리 소자 및 그 제조 방법 |
CN107004766A (zh) | 2014-11-26 | 2017-08-01 | 密克罗奇普技术公司 | 具有用于经减少的导电路径区域/经增强的电场的间隔物区域的电阻式存储器单元 |
US9461134B1 (en) | 2015-05-20 | 2016-10-04 | Asm Ip Holding B.V. | Method for forming source/drain contact structure with chalcogen passivation |
US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
CN105591271B (zh) * | 2016-02-29 | 2018-07-10 | 中国科学院半导体研究所 | 可宽带线性调频窄线宽激光装置 |
US9793323B1 (en) | 2016-07-11 | 2017-10-17 | Macronix International Co., Ltd. | Phase change memory with high endurance |
CN109979983B (zh) * | 2018-06-22 | 2021-05-28 | 友达光电股份有限公司 | 有机发光二极管显示装置 |
US11271036B2 (en) | 2020-06-24 | 2022-03-08 | Sandisk Technologies Llc | Memory device containing dual etch stop layers for selector elements and method of making the same |
US12041860B2 (en) * | 2022-01-21 | 2024-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive memory device and method for manufacturing with protrusion of electrode |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03192721A (ja) * | 1989-12-21 | 1991-08-22 | Mitsubishi Electric Corp | 半導体装置配線層間の接続部形成方法 |
JPH06509909A (ja) * | 1991-08-19 | 1994-11-02 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ |
JPH07131027A (ja) * | 1993-11-01 | 1995-05-19 | Fuji Xerox Co Ltd | 薄膜半導体装置の製造方法 |
US5536947A (en) * | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
JP2000509204A (ja) * | 1996-04-19 | 2000-07-18 | エナージー コンバーション デバイセス インコーポレイテッド | テーパード・コンタクトを有するマルチビット単一セルメモリ |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217995B2 (ja) * | 1972-02-18 | 1977-05-19 | ||
US3892606A (en) * | 1973-06-28 | 1975-07-01 | Ibm | Method for forming silicon conductive layers utilizing differential etching rates |
US3868723A (en) * | 1973-06-29 | 1975-02-25 | Ibm | Integrated circuit structure accommodating via holes |
US4153883A (en) * | 1977-12-16 | 1979-05-08 | Harris Corporation | Electrically alterable amplifier configurations |
DE2820403C2 (de) * | 1978-05-10 | 1984-09-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Ankleben und zum Kontaktieren eines elektrischen Bauteils mit einer flächenförmigen Elektrode |
US4223277A (en) * | 1978-12-27 | 1980-09-16 | Harris Corporation | Electrically alterable field effect transistor amplifier configuration |
NL7907682A (nl) * | 1979-10-18 | 1981-04-22 | Philips Nv | Scheerapparaat. |
US4442507A (en) | 1981-02-23 | 1984-04-10 | Burroughs Corporation | Electrically programmable read-only memory stacked above a semiconductor substrate |
US4444507A (en) * | 1982-06-28 | 1984-04-24 | Dray Robert F | Apparatus and method for melting and conveying plasticated material |
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
FR2572196B1 (fr) | 1984-10-19 | 1987-02-20 | Centre Nat Rech Scient | Procede et dispositif de modulation de phase optique controlable stable |
US4845533A (en) * | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
US4800420A (en) * | 1987-05-14 | 1989-01-24 | Hughes Aircraft Company | Two-terminal semiconductor diode arrangement |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5210598A (en) * | 1988-08-23 | 1993-05-11 | Seiko Epson Corporation | Semiconductor element having a resistance state transition region of two-layer structure |
US4915779A (en) * | 1988-08-23 | 1990-04-10 | Motorola Inc. | Residue-free plasma etch of high temperature AlCu |
US5336628A (en) | 1988-10-25 | 1994-08-09 | Commissariat A L'energie Atomique | Method for fabricating semiconductor memory device |
EP0393270A1 (en) * | 1989-04-21 | 1990-10-24 | Ming-Hsing Lee | Process for etching copper with ammoniacal etchant solution and reconditioning the used etchant solution |
US5057451A (en) * | 1990-04-12 | 1991-10-15 | Actel Corporation | Method of forming an antifuse element with substantially reduced capacitance using the locos technique |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5406509A (en) * | 1991-01-18 | 1995-04-11 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5219782A (en) * | 1992-03-30 | 1993-06-15 | Texas Instruments Incorporated | Sublithographic antifuse method for manufacturing |
US5557136A (en) * | 1991-04-26 | 1996-09-17 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
JPH05110017A (ja) | 1991-10-18 | 1993-04-30 | Hitachi Ltd | 半導体装置とその製造方法 |
WO1994020975A1 (en) * | 1993-03-11 | 1994-09-15 | Fed Corporation | Emitter tip structure and field emission device comprising same, and method of making same |
KR0150252B1 (ko) | 1993-07-13 | 1998-10-01 | 모리시다 요이치 | 반도체 기억장치의 제조방법 |
US5468670A (en) | 1993-07-14 | 1995-11-21 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating a semiconductor memory device having a stacked capacitor cell |
US5399505A (en) * | 1993-07-23 | 1995-03-21 | Motorola, Inc. | Method and apparatus for performing wafer level testing of integrated circuit dice |
JPH0758204A (ja) | 1993-08-17 | 1995-03-03 | Nippon Steel Corp | 半導体装置の製造方法 |
JPH08153785A (ja) * | 1994-11-28 | 1996-06-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US5530378A (en) | 1995-04-26 | 1996-06-25 | Xilinx, Inc. | Cross point interconnect structure with reduced area |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5789758A (en) | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5851882A (en) * | 1996-05-06 | 1998-12-22 | Micron Technology, Inc. | ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US6337266B1 (en) * | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
US5814527A (en) * | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5789277A (en) * | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US6147395A (en) | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
US6060723A (en) * | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
US5933365A (en) * | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
ATE274744T1 (de) * | 1997-12-04 | 2004-09-15 | Axon Technologies Corp | Programmierbare aggregierende unterflächenmetallisierungsstruktur |
US6141241A (en) * | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
US5912839A (en) * | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6487106B1 (en) * | 1999-01-12 | 2002-11-26 | Arizona Board Of Regents | Programmable microelectronic devices and method of forming and programming same |
US6570784B2 (en) * | 2001-06-29 | 2003-05-27 | Ovonyx, Inc. | Programming a phase-change material memory |
US6969869B2 (en) * | 2001-08-30 | 2005-11-29 | Ovonyx, Inc. | Programmable resistance memory element with indirect heating |
WO2003032392A2 (en) * | 2001-10-09 | 2003-04-17 | Axon Technologies Corporation | Programmable microelectronic device, structure, and system, and method of forming the same |
US6549447B1 (en) * | 2001-10-31 | 2003-04-15 | Peter Fricke | Memory cell structure |
US6879525B2 (en) * | 2001-10-31 | 2005-04-12 | Hewlett-Packard Development Company, L.P. | Feedback write method for programmable memory |
WO2003079463A2 (en) * | 2002-03-15 | 2003-09-25 | Axon Technologies Corporation | Programmable structure, an array including the structure, and methods of forming the same |
US6751114B2 (en) * | 2002-03-28 | 2004-06-15 | Micron Technology, Inc. | Method for programming a memory cell |
US6759267B2 (en) * | 2002-07-19 | 2004-07-06 | Macronix International Co., Ltd. | Method for forming a phase change memory |
KR100546322B1 (ko) * | 2003-03-27 | 2006-01-26 | 삼성전자주식회사 | 비휘발성 메모리와 휘발성 메모리로 선택적으로 동작할 수있는 상 변화 메모리 장치 및 상 변화 메모리 장치의 동작방법 |
US7085154B2 (en) * | 2003-06-03 | 2006-08-01 | Samsung Electronics Co., Ltd. | Device and method for pulse width control in a phase change memory device |
US6873541B2 (en) * | 2003-06-09 | 2005-03-29 | Macronix International Co., Ltd. | Nonvolatile memory programmble by a heat induced chemical reaction |
DE102004039977B4 (de) * | 2003-08-13 | 2008-09-11 | Samsung Electronics Co., Ltd., Suwon | Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle |
KR100568512B1 (ko) * | 2003-09-29 | 2006-04-07 | 삼성전자주식회사 | 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들 |
KR100520228B1 (ko) * | 2004-02-04 | 2005-10-11 | 삼성전자주식회사 | 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법 |
US6956761B2 (en) * | 2004-03-10 | 2005-10-18 | Micron Technology, Inc. | Method to manufacture polymer memory with copper ion switching species |
KR100564637B1 (ko) * | 2004-10-26 | 2006-03-29 | 삼성전자주식회사 | 반도체 메모리 장치와 그 프로그래밍 방법 |
US7233177B2 (en) * | 2005-04-04 | 2007-06-19 | International Business Machines Corporation | Precision tuning of a phase-change resistive element |
-
1996
- 1996-10-02 US US08/724,816 patent/US6147395A/en not_active Expired - Lifetime
-
1997
- 1997-10-02 DE DE69739678T patent/DE69739678D1/de not_active Expired - Lifetime
- 1997-10-02 AT AT00202838T patent/ATE248439T1/de not_active IP Right Cessation
- 1997-10-02 DE DE69721306T patent/DE69721306T2/de not_active Expired - Lifetime
- 1997-10-02 AT AT02079437T patent/ATE450891T1/de not_active IP Right Cessation
- 1997-10-02 AT AT97955058T patent/ATE238605T1/de not_active IP Right Cessation
- 1997-10-02 AU AU80525/98A patent/AU8052598A/en not_active Abandoned
- 1997-10-02 EP EP02079437A patent/EP1296377B1/en not_active Expired - Lifetime
- 1997-10-02 JP JP53133898A patent/JP4747231B2/ja not_active Expired - Fee Related
- 1997-10-02 WO PCT/US1997/017711 patent/WO1998036446A2/en active IP Right Grant
- 1997-10-02 EP EP00202838A patent/EP1065736B1/en not_active Expired - Lifetime
- 1997-10-02 KR KR10-1999-7002881A patent/KR100466675B1/ko not_active IP Right Cessation
- 1997-10-02 EP EP97955058A patent/EP0946975B1/en not_active Expired - Lifetime
- 1997-10-02 DE DE69724478T patent/DE69724478T2/de not_active Expired - Lifetime
- 1997-10-23 US US08/956,594 patent/US6150253A/en not_active Expired - Lifetime
-
2000
- 2000-06-02 US US09/586,144 patent/US6294452B1/en not_active Expired - Lifetime
- 2000-06-02 US US09/586,272 patent/US6329666B1/en not_active Expired - Lifetime
- 2000-08-31 US US09/653,542 patent/US6287887B1/en not_active Expired - Lifetime
- 2000-11-02 US US09/703,806 patent/US6462353B1/en not_active Expired - Lifetime
-
2001
- 2001-09-25 US US09/963,842 patent/US6825107B2/en not_active Expired - Fee Related
- 2001-09-25 US US09/964,145 patent/US6423621B2/en not_active Expired - Lifetime
-
2002
- 2002-07-09 US US10/191,222 patent/US6781145B2/en not_active Expired - Fee Related
-
2003
- 2003-01-17 US US10/346,994 patent/US6897467B2/en not_active Expired - Fee Related
- 2003-08-20 US US10/644,685 patent/US7253430B2/en not_active Expired - Fee Related
-
2007
- 2007-08-02 US US11/833,034 patent/US7935950B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03192721A (ja) * | 1989-12-21 | 1991-08-22 | Mitsubishi Electric Corp | 半導体装置配線層間の接続部形成方法 |
US5536947A (en) * | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
JPH06509909A (ja) * | 1991-08-19 | 1994-11-02 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ |
JPH07131027A (ja) * | 1993-11-01 | 1995-05-19 | Fuji Xerox Co Ltd | 薄膜半導体装置の製造方法 |
JP2000509204A (ja) * | 1996-04-19 | 2000-07-18 | エナージー コンバーション デバイセス インコーポレイテッド | テーパード・コンタクトを有するマルチビット単一セルメモリ |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002540605A (ja) * | 1999-03-25 | 2002-11-26 | オヴォニクス インコーポレイテッド | 改善された接合を有する電気的にプログラム可能なメモリ素子 |
JP2003100991A (ja) * | 2001-09-20 | 2003-04-04 | Ricoh Co Ltd | 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法 |
US6844564B2 (en) | 2001-12-12 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
US7291857B2 (en) | 2001-12-12 | 2007-11-06 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
JP2008529291A (ja) * | 2005-02-01 | 2008-07-31 | キモンダ アクチエンゲゼルシャフト | ピラー相変化メモリセル |
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JP2007158344A (ja) * | 2005-12-02 | 2007-06-21 | Samsung Electronics Co Ltd | 金属層−絶縁層−金属層構造を備えるストレージノード、及び、そのストレージノードを備える不揮発性メモリ素子及びその動作方法 |
JP2008103727A (ja) * | 2006-10-18 | 2008-05-01 | Samsung Electronics Co Ltd | 下部電極コンタクト層と相変化層とが広い接触面積を持つ相変化メモリ素子及びその製造方法 |
JP2009105082A (ja) * | 2007-10-19 | 2009-05-14 | Elpida Memory Inc | 縦型相変化メモリ装置の製造方法 |
JP2009212202A (ja) * | 2008-03-03 | 2009-09-17 | Elpida Memory Inc | 相変化メモリ装置およびその製造方法 |
JP2009218259A (ja) * | 2008-03-07 | 2009-09-24 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
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