JP2000509204A - テーパード・コンタクトを有するマルチビット単一セルメモリ - Google Patents
テーパード・コンタクトを有するマルチビット単一セルメモリInfo
- Publication number
- JP2000509204A JP2000509204A JP9538209A JP53820997A JP2000509204A JP 2000509204 A JP2000509204 A JP 2000509204A JP 9538209 A JP9538209 A JP 9538209A JP 53820997 A JP53820997 A JP 53820997A JP 2000509204 A JP2000509204 A JP 2000509204A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- thin film
- contact
- film layer
- twenty
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.少なくとも1つのカルコゲン元素と少なくとも1つの遷移金属元素とを含 み、単一セルメモリ素子を成す一定容積のメモリ材料であって、(1)電気抵抗 値の大きな動的範囲と、(2)前記単一セルメモリ素子にマルチビットメモリ能 力を与えるように、前記メモリ材料の少なくとも1つの線条部分が選択した電気 入力信号に応答して前記動的範囲内の複数の抵抗値のうちの1つに設定される能 力とによって特徴付けられる前記一定容積のメモリ材料と、 前記選択した電気信号によって、前記材料の以前の抵抗値に関係なく前記動的 範囲内の任意の抵抗値に設定することができる、前記単一セルメモリ素子の少な くとも1つの線条部分と、 前記メモリ材料を前記動的範囲内の選択した抵抗値に設定するために前記電気 入力信号を供給する、間をおいて配置された第1及び第2コンタクトとから成る 、電気的に動作し、直接上書き可能である、マルチビット単一セルメモリ素子で あって、 さらに、前記第2コンタクトが前記メモリ材料に隣接したピークに向かってテ ーパー状に成されていることを改善点とする、前記単一セルメモリ素子。 2.前記カルコゲン元素が、Te、Se、Ge、Sb 及びその混合物から選択される、請求項1のメモリ素子。 3.前記第1コンタクトが、前記メモリ材料に隣接した隣接薄膜層を含む、請 求項1のメモリ素子。 4.前記隣接薄膜層が炭素材料から成る、請求項3のメモリ素子。 5.前記隣接薄膜層が、Tiと、C、N、Al、Si及びそれらの混合物又は 合金より成るグループから選択された2種又はそれ以上の元素とを含む、請求項 3のメモリ素子。 6.前記隣接薄膜層の膜厚が約100Å〜2000Åである、請求項3のメモ リ素子。 7.前記第1コンタクトがさらに、前記メモリ材料から距離をおいて配置され た遠隔薄膜層を含む、請求項1のメモリ素子。 8.前記遠隔薄膜層が、Ti、W、Mo及びそれらの混合物又は合金より成る グループから選択された1つ又はそれ以上の元素から成る、請求項7のメモリ素 子。 9.前記遠隔薄膜コンタクト層の膜厚が約100Å〜4000Åである、請求 項7のメモリ素子。 10.前記第2コンタクトのピーク断面の直径が、2000Å未満である、請 求項1のメモリ素子。 11.前記ピーク断面の直径が1000Å未満である、請求項10のメモリ素 子。 12.前記ピーク断面の直径が500Å未満である、請求項11のメモリ素子 。 13.前記の間をおいて配置された第2コンタクトが円錐状に尖っている、請 求項1のメモリ素子。 14.前記の間をおいて配置された第2コンタクトが角錐状に尖っている、請 求項1のメモリ素子。 15.前記の間をおいて配置された第2コンタクトがさらに第1薄膜層を含む 、請求項1のメモリ素子。 16.前記第1薄膜層が、Tiと、C、N、Al、Si及びそれらの混合物又 は合金より成るグループから選択された2種又はそれ以上の元素を含む、請求項 15のメモリ素子。 17.前記の間をおいて配置された第2コンタクトがさらに、Ti、W、Mo 及びそれらの混合物又は合金から成るグループから選択された1種又はそれ以上 の元素から成る第2薄膜層を有している、請求項15のメモリ素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/635,442 US5687112A (en) | 1996-04-19 | 1996-04-19 | Multibit single cell memory element having tapered contact |
US08/635,442 | 1996-04-19 | ||
PCT/US1997/006538 WO1997040499A1 (en) | 1996-04-19 | 1997-04-17 | Multibit single cell memory having tapered contact |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000509204A true JP2000509204A (ja) | 2000-07-18 |
JP4091984B2 JP4091984B2 (ja) | 2008-05-28 |
Family
ID=24547807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53820997A Expired - Fee Related JP4091984B2 (ja) | 1996-04-19 | 1997-04-17 | テーパード・コンタクトを有するマルチビット単一セルメモリ |
Country Status (9)
Country | Link |
---|---|
US (2) | US5687112A (ja) |
EP (1) | EP0894323B1 (ja) |
JP (1) | JP4091984B2 (ja) |
KR (1) | KR100397929B1 (ja) |
AU (1) | AU2677297A (ja) |
CA (1) | CA2250504C (ja) |
DE (1) | DE69723252T2 (ja) |
TW (1) | TW328590B (ja) |
WO (1) | WO1997040499A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001504279A (ja) * | 1996-10-02 | 2001-03-27 | マイクロン、テクノロジー、インコーポレーテッド | 電極間に小面積のコンタクトを製造するための方法 |
JP2002540605A (ja) * | 1999-03-25 | 2002-11-26 | オヴォニクス インコーポレイテッド | 改善された接合を有する電気的にプログラム可能なメモリ素子 |
JP2004158852A (ja) * | 2002-11-01 | 2004-06-03 | Samsung Electronics Co Ltd | 相変換記憶素子及びその製造方法 |
JP2005012186A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
US6844564B2 (en) | 2001-12-12 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
JP2007184591A (ja) * | 2006-01-02 | 2007-07-19 | Samsung Electronics Co Ltd | マルチビットセル及び直径が調節できるコンタクトを具備する相変化記憶素子、その製造方法及びそのプログラム方法 |
JP2008103727A (ja) * | 2006-10-18 | 2008-05-01 | Samsung Electronics Co Ltd | 下部電極コンタクト層と相変化層とが広い接触面積を持つ相変化メモリ素子及びその製造方法 |
JP2009505424A (ja) * | 2005-08-15 | 2009-02-05 | マイクロン テクノロジー, インク. | 再生可能可変抵抗絶縁メモリ装置およびその形成方法 |
JP2011243980A (ja) * | 2010-05-11 | 2011-12-01 | Micron Technology Inc | カルコゲニド含有デバイス用電極の形成方法 |
JP5039035B2 (ja) * | 2006-06-23 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2017170149A1 (ja) * | 2016-03-30 | 2017-10-05 | 日本電気株式会社 | 抵抗変化素子、および抵抗変化素子の製造方法 |
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US5406509A (en) * | 1991-01-18 | 1995-04-11 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5414271A (en) * | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
US5536947A (en) * | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5341328A (en) * | 1991-01-18 | 1994-08-23 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5359205A (en) * | 1991-11-07 | 1994-10-25 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
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1996
- 1996-04-19 US US08/635,442 patent/US5687112A/en not_active Ceased
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1997
- 1997-04-17 JP JP53820997A patent/JP4091984B2/ja not_active Expired - Fee Related
- 1997-04-17 EP EP97918739A patent/EP0894323B1/en not_active Expired - Lifetime
- 1997-04-17 CA CA002250504A patent/CA2250504C/en not_active Expired - Fee Related
- 1997-04-17 WO PCT/US1997/006538 patent/WO1997040499A1/en active IP Right Grant
- 1997-04-17 AU AU26772/97A patent/AU2677297A/en not_active Abandoned
- 1997-04-17 DE DE69723252T patent/DE69723252T2/de not_active Expired - Fee Related
- 1997-04-17 KR KR10-1998-0708365A patent/KR100397929B1/ko not_active IP Right Cessation
- 1997-04-19 TW TW086105326A patent/TW328590B/zh not_active IP Right Cessation
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1999
- 1999-11-08 US US09/436,367 patent/USRE37259E1/en not_active Expired - Lifetime
Cited By (18)
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JP2001504279A (ja) * | 1996-10-02 | 2001-03-27 | マイクロン、テクノロジー、インコーポレーテッド | 電極間に小面積のコンタクトを製造するための方法 |
JP4747231B2 (ja) * | 1996-10-02 | 2011-08-17 | ラウンド、ロック、リサーチ、リミテッド、ライアビリティ、カンパニー | 電極間に小面積のコンタクトを製造するための方法 |
JP2002540605A (ja) * | 1999-03-25 | 2002-11-26 | オヴォニクス インコーポレイテッド | 改善された接合を有する電気的にプログラム可能なメモリ素子 |
US6844564B2 (en) | 2001-12-12 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
US7291857B2 (en) | 2001-12-12 | 2007-11-06 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
JP2004158852A (ja) * | 2002-11-01 | 2004-06-03 | Samsung Electronics Co Ltd | 相変換記憶素子及びその製造方法 |
JP2005012186A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
JP2009505424A (ja) * | 2005-08-15 | 2009-02-05 | マイクロン テクノロジー, インク. | 再生可能可変抵抗絶縁メモリ装置およびその形成方法 |
JP2013048251A (ja) * | 2005-08-15 | 2013-03-07 | Micron Technology Inc | 可変抵抗絶縁層を用いたメモリ素子及びそれを有するプロセッサシステム |
US8476613B2 (en) | 2005-08-15 | 2013-07-02 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices and methods for forming same |
JP2007184591A (ja) * | 2006-01-02 | 2007-07-19 | Samsung Electronics Co Ltd | マルチビットセル及び直径が調節できるコンタクトを具備する相変化記憶素子、その製造方法及びそのプログラム方法 |
JP5039035B2 (ja) * | 2006-06-23 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2008103727A (ja) * | 2006-10-18 | 2008-05-01 | Samsung Electronics Co Ltd | 下部電極コンタクト層と相変化層とが広い接触面積を持つ相変化メモリ素子及びその製造方法 |
JP2011243980A (ja) * | 2010-05-11 | 2011-12-01 | Micron Technology Inc | カルコゲニド含有デバイス用電極の形成方法 |
WO2017170149A1 (ja) * | 2016-03-30 | 2017-10-05 | 日本電気株式会社 | 抵抗変化素子、および抵抗変化素子の製造方法 |
JPWO2017170149A1 (ja) * | 2016-03-30 | 2019-02-07 | 日本電気株式会社 | 抵抗変化素子、および抵抗変化素子の製造方法 |
US10615339B2 (en) | 2016-03-30 | 2020-04-07 | Nec Corporation | Variable resistance element and method for fabricating the variable resistance element |
JP7165976B2 (ja) | 2016-03-30 | 2022-11-07 | ナノブリッジ・セミコンダクター株式会社 | 抵抗変化素子、および抵抗変化素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0894323A1 (en) | 1999-02-03 |
CA2250504C (en) | 2006-08-01 |
EP0894323B1 (en) | 2003-07-02 |
KR20000010530A (ko) | 2000-02-15 |
TW328590B (en) | 1998-03-21 |
DE69723252T2 (de) | 2004-05-27 |
DE69723252D1 (de) | 2003-08-07 |
USRE37259E1 (en) | 2001-07-03 |
EP0894323A4 (en) | 1999-05-19 |
CA2250504A1 (en) | 1997-10-30 |
AU2677297A (en) | 1997-11-12 |
US5687112A (en) | 1997-11-11 |
WO1997040499A1 (en) | 1997-10-30 |
KR100397929B1 (ko) | 2003-12-24 |
JP4091984B2 (ja) | 2008-05-28 |
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