JP5039035B2 - 半導体装置 - Google Patents
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- JP5039035B2 JP5039035B2 JP2008522220A JP2008522220A JP5039035B2 JP 5039035 B2 JP5039035 B2 JP 5039035B2 JP 2008522220 A JP2008522220 A JP 2008522220A JP 2008522220 A JP2008522220 A JP 2008522220A JP 5039035 B2 JP5039035 B2 JP 5039035B2
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 239000000463 material Substances 0.000 claims description 203
- 150000004770 chalcogenides Chemical class 0.000 claims description 171
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 55
- 229910052721 tungsten Inorganic materials 0.000 claims description 55
- 239000010937 tungsten Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 31
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 314
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 28
- 229910001936 tantalum oxide Inorganic materials 0.000 description 28
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- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
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- 239000012298 atmosphere Substances 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910000618 GeSbTe Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000005546 reactive sputtering Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
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- 239000007800 oxidant agent Substances 0.000 description 4
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- 229910052715 tantalum Inorganic materials 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910017872 a-SiO2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 229910021472 group 8 element Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Description
以上の説明から明らかなように、絶縁体界面層の形成方法として、金属ターゲットを用いてスパッタリングすることによって金属膜を形成した後、酸素ラジカルや酸素プラズマ等の酸化性雰囲気中で金属膜を酸化する手段を用いることにより、酸化膜厚の面内均一性を向上させることができる。具体的には、タンタル酸化膜の厚さの面内分布は1σで1%以下となる。この結果、抵抗の面内ばらつきは少なくとも1桁以下に抑制できる。
本発明の実施の形態1を図13により説明する。この実施の形態は、カルコゲナイド材料層の上面と、その上に形成する層間絶縁膜およびプラグの下面との間に、絶縁体からなる界面層を形成するもので、上記発明の半導体記憶装置において、相変化メモリセルを形成する第1の手段を具体的に示した例である。
以下には、プラグ電極が下に来る実施の形態について述べる。プラグ電極全面が界面層で覆われている例を述べているが図16から図26のように面積が制限されているほうがより好ましいのは上記のプラグ電極が上に来る実施の形態と同様である。
Claims (8)
- 半導体基板と、
前記半導体基板の主面に形成されたトランジスタと、
前記トランジスタの上部に形成され、且つ、前記トランジスタに電気的に接続した電極と、
前記電極の上部に形成され、且つ、前記電極に接してあるいは他の層を介して設けられたカルコゲナイド材料層と、
前記カルコゲナイド材料層の上部に形成された絶縁膜と、
前記絶縁膜に、前記カルコゲナイド材料層に達するように形成された孔と、
前記孔の側面及び底面に形成され、前記孔の底面において前記カルコゲナイド材料層と接するように設けられ、且つ、チタン酸化膜、ジルコニウム酸化膜、ハフニウム酸化膜、ニオブ酸化膜、クロム酸化膜、モリブデン酸化膜、タングステン酸化膜又はアルミニウム酸化膜の何れかの絶縁性材料よりなる界面層と、
前記界面層を介して、前記孔の内部に形成されたプラグ電極とを少なくとも有することを特徴とする半導体装置。 - 前記界面層は、連続膜として形成されていることを特徴とする請求項1記載の半導体装置。
- 前記界面層は、連続膜ではなく、前記カルコゲナイド材料層の一部と前記プラグ電極の一部とが直接接していることを特徴とする請求項1記載の半導体装置。
- 前記界面層は、スパッタリング法によって形成された層であることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記界面層の平均膜厚が0.1nm以上、5nm以下であることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記界面層は、Ta2O5又はCr2O3を含むことを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
- 前記カルコゲナイド材料層は、Ge、Sb及びTeを含むことを特徴とする請求項1〜6の何れか1項に記載の半導体装置。
- 前記プラグ電極は、タングステンを含むことを特徴とする請求項1〜7の何れか1項に記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2006/312640 WO2007148405A1 (ja) | 2006-06-23 | 2006-06-23 | 半導体装置 |
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JPWO2007148405A1 JPWO2007148405A1 (ja) | 2009-11-12 |
JP5039035B2 true JP5039035B2 (ja) | 2012-10-03 |
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JP2008522220A Expired - Fee Related JP5039035B2 (ja) | 2006-06-23 | 2006-06-23 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110049454A1 (ja) |
JP (1) | JP5039035B2 (ja) |
WO (1) | WO2007148405A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7593254B2 (en) | 2007-05-25 | 2009-09-22 | Micron Technology, Inc. | Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
JP5443965B2 (ja) * | 2009-12-17 | 2014-03-19 | 株式会社東芝 | 半導体記憶装置 |
JP2011199215A (ja) * | 2010-03-24 | 2011-10-06 | Hitachi Ltd | 半導体記憶装置 |
CN102637820B (zh) * | 2011-02-09 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的形成方法 |
US8729519B2 (en) | 2012-10-23 | 2014-05-20 | Micron Technology, Inc. | Memory constructions |
JP6201151B2 (ja) * | 2013-03-18 | 2017-09-27 | パナソニックIpマネジメント株式会社 | 不揮発性記憶装置及びその製造方法 |
US9112148B2 (en) | 2013-09-30 | 2015-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell structure with laterally offset BEVA/TEVA |
WO2018080513A1 (en) * | 2016-10-28 | 2018-05-03 | Intel Corporation | Local interconnect for group iv source/drain regions |
US10505106B1 (en) * | 2018-10-18 | 2019-12-10 | Toyota Motor Engineering & Manufacturing North America, Inc. | Encapsulated PCM switching devices and methods of forming the same |
JP2021048224A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 不揮発性記憶装置 |
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JPWO2007148405A1 (ja) | 2009-11-12 |
WO2007148405A1 (ja) | 2007-12-27 |
US20110049454A1 (en) | 2011-03-03 |
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