IT1392556B1 - Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura - Google Patents
Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibraturaInfo
- Publication number
- IT1392556B1 IT1392556B1 ITTO2008A000951A ITTO20080951A IT1392556B1 IT 1392556 B1 IT1392556 B1 IT 1392556B1 IT TO2008A000951 A ITTO2008A000951 A IT TO2008A000951A IT TO20080951 A ITTO20080951 A IT TO20080951A IT 1392556 B1 IT1392556 B1 IT 1392556B1
- Authority
- IT
- Italy
- Prior art keywords
- phase change
- calibration method
- resistor structure
- relative calibration
- material resistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49085—Thermally variable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2008A000951A IT1392556B1 (it) | 2008-12-18 | 2008-12-18 | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
US12/638,922 US8319597B2 (en) | 2008-12-18 | 2009-12-15 | Resistor structure of phase change material and trimming method thereof |
EP09179740A EP2200049A1 (en) | 2008-12-18 | 2009-12-17 | Resistor structure of phase change material and trimming method thereof |
US13/414,633 US8427273B2 (en) | 2008-12-18 | 2012-03-07 | Resistor structure of phase change material and trimming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2008A000951A IT1392556B1 (it) | 2008-12-18 | 2008-12-18 | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20080951A1 ITTO20080951A1 (it) | 2010-06-19 |
IT1392556B1 true IT1392556B1 (it) | 2012-03-09 |
Family
ID=40887398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITTO2008A000951A IT1392556B1 (it) | 2008-12-18 | 2008-12-18 | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
Country Status (3)
Country | Link |
---|---|
US (2) | US8319597B2 (it) |
EP (1) | EP2200049A1 (it) |
IT (1) | IT1392556B1 (it) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8790637B2 (en) * | 2003-06-27 | 2014-07-29 | DePuy Synthes Products, LLC | Repair and regeneration of ocular tissue using postpartum-derived cells |
IT1392556B1 (it) | 2008-12-18 | 2012-03-09 | St Microelectronics Rousset | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
US8017433B2 (en) * | 2010-02-09 | 2011-09-13 | International Business Machines Corporation | Post deposition method for regrowth of crystalline phase change material |
IT1402165B1 (it) * | 2010-06-30 | 2013-08-28 | St Microelectronics Srl | Resistore ad elevata precisione e relativo metodo di calibratura |
ITTO20120553A1 (it) * | 2012-06-22 | 2013-12-23 | St Microelectronics Srl | Dispositivo a resistore calibrabile elettricamente e relativo metodo di calibrazione |
US8896408B2 (en) * | 2013-03-14 | 2014-11-25 | Analog Devices, Inc. | Composite resistors |
EP3050076A4 (en) * | 2013-09-27 | 2017-10-18 | Intel Corporation | Methods of forming tuneable temperature coefficient for embedded resistors |
US9331642B2 (en) * | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
US20160218062A1 (en) * | 2015-01-23 | 2016-07-28 | Texas Instruments Incorporated | Thin film resistor integration in copper damascene metallization |
JP2017022176A (ja) * | 2015-07-07 | 2017-01-26 | Koa株式会社 | 薄膜抵抗器及びその製造方法 |
US9806020B1 (en) * | 2016-04-26 | 2017-10-31 | Kabushiki Kaisha Toshiba | Semiconductor device |
US10276439B2 (en) * | 2017-06-02 | 2019-04-30 | International Business Machines Corporation | Rapid oxide etch for manufacturing through dielectric via structures |
US10211278B2 (en) * | 2017-07-11 | 2019-02-19 | Texas Instruments Incorporated | Device and method for a thin film resistor using a via retardation layer |
WO2019132879A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Compensation of resistance in thin film resistor |
US11333558B2 (en) * | 2018-11-06 | 2022-05-17 | Globalfoundries U.S. Inc. | Boolean temperature sensing using phase transition material |
GB2610886B (en) * | 2019-08-21 | 2023-09-13 | Pragmatic Printing Ltd | Resistor geometry |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4746896A (en) * | 1986-05-08 | 1988-05-24 | North American Philips Corp. | Layered film resistor with high resistance and high stability |
US4703557A (en) * | 1986-10-07 | 1987-11-03 | Cts Corporation | Adjustment of thick film resistor (TCR) by laser annealing |
US4907341A (en) | 1987-02-27 | 1990-03-13 | John Fluke Mfg. Co., Inc. | Compound resistor manufacturing method |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5596522A (en) | 1991-01-18 | 1997-01-21 | Energy Conversion Devices, Inc. | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5534711A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5536947A (en) | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US5233327A (en) * | 1991-07-01 | 1993-08-03 | International Business Machines Corporation | Active resistor trimming by differential annealing |
BE1007868A3 (nl) * | 1993-12-10 | 1995-11-07 | Koninkl Philips Electronics Nv | Elektrische weerstand. |
US5687112A (en) | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US6211769B1 (en) * | 1997-12-22 | 2001-04-03 | Texas Instruments Incorporated | System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow |
US6326256B1 (en) | 1998-12-18 | 2001-12-04 | Texas Instruments Incorporated | Method of producing a laser trimmable thin film resistor in an integrated circuit |
US6497824B1 (en) | 1999-09-23 | 2002-12-24 | Texas Instruments Incorporated | One mask solution for the integration of the thin film resistor |
US6647614B1 (en) * | 2000-10-20 | 2003-11-18 | International Business Machines Corporation | Method for changing an electrical resistance of a resistor |
DE10053957C2 (de) * | 2000-10-31 | 2002-10-31 | Infineon Technologies Ag | Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung |
US6621404B1 (en) * | 2001-10-23 | 2003-09-16 | Lsi Logic Corporation | Low temperature coefficient resistor |
US7012499B2 (en) | 2003-06-02 | 2006-03-14 | International Business Machines Corporation | Method of fabrication of thin film resistor with 0 TCR |
US7217981B2 (en) | 2005-01-06 | 2007-05-15 | International Business Machines Corporation | Tunable temperature coefficient of resistance resistors and method of fabricating same |
KR100699833B1 (ko) * | 2005-01-22 | 2007-03-27 | 삼성전자주식회사 | 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자 |
IT1392556B1 (it) | 2008-12-18 | 2012-03-09 | St Microelectronics Rousset | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
-
2008
- 2008-12-18 IT ITTO2008A000951A patent/IT1392556B1/it active
-
2009
- 2009-12-15 US US12/638,922 patent/US8319597B2/en active Active
- 2009-12-17 EP EP09179740A patent/EP2200049A1/en not_active Withdrawn
-
2012
- 2012-03-07 US US13/414,633 patent/US8427273B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8319597B2 (en) | 2012-11-27 |
US8427273B2 (en) | 2013-04-23 |
US20100156588A1 (en) | 2010-06-24 |
EP2200049A1 (en) | 2010-06-23 |
ITTO20080951A1 (it) | 2010-06-19 |
US20120171838A1 (en) | 2012-07-05 |
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