IT1402165B1 - Resistore ad elevata precisione e relativo metodo di calibratura - Google Patents

Resistore ad elevata precisione e relativo metodo di calibratura

Info

Publication number
IT1402165B1
IT1402165B1 ITTO2010A000559A ITTO20100559A IT1402165B1 IT 1402165 B1 IT1402165 B1 IT 1402165B1 IT TO2010A000559 A ITTO2010A000559 A IT TO2010A000559A IT TO20100559 A ITTO20100559 A IT TO20100559A IT 1402165 B1 IT1402165 B1 IT 1402165B1
Authority
IT
Italy
Prior art keywords
high precision
calibration method
precision resistor
relative calibration
relative
Prior art date
Application number
ITTO2010A000559A
Other languages
English (en)
Inventor
Antonello Santangelo
Stefania Maria Serena Privitera
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2010A000559A priority Critical patent/IT1402165B1/it
Priority to US13/173,214 priority patent/US8952492B2/en
Publication of ITTO20100559A1 publication Critical patent/ITTO20100559A1/it
Application granted granted Critical
Publication of IT1402165B1 publication Critical patent/IT1402165B1/it
Priority to US14/617,984 priority patent/US9429967B2/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463—Sources providing an output which depends on temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
    • H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
ITTO2010A000559A 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura IT1402165B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura
US13/173,214 US8952492B2 (en) 2010-06-30 2011-06-30 High-precision resistor and trimming method thereof
US14/617,984 US9429967B2 (en) 2010-06-30 2015-02-10 High precision resistor and trimming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura

Publications (2)

Publication Number Publication Date
ITTO20100559A1 ITTO20100559A1 (it) 2011-12-31
IT1402165B1 true IT1402165B1 (it) 2013-08-28

Family

ID=43640613

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura

Country Status (2)

Country Link
US (2) US8952492B2 (it)
IT (1) IT1402165B1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
ITTO20120553A1 (it) * 2012-06-22 2013-12-23 St Microelectronics Srl Dispositivo a resistore calibrabile elettricamente e relativo metodo di calibrazione
US9059130B2 (en) 2012-12-31 2015-06-16 International Business Machines Corporation Phase changing on-chip thermal heat sink
US9972616B2 (en) * 2013-09-27 2018-05-15 Intel Corporation Methods of forming tuneable temperature coefficient FR embedded resistors
US9541456B2 (en) * 2014-02-07 2017-01-10 Sandisk Technologies Llc Reference voltage generator for temperature sensor with trimming capability at two temperatures
DE102015112919B4 (de) * 2015-08-06 2019-12-24 Infineon Technologies Ag Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements
US9400511B1 (en) 2016-01-07 2016-07-26 International Business Machines Corporation Methods and control systems of resistance adjustment of resistors
US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136980A (en) 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
US4870472A (en) 1984-10-18 1989-09-26 Motorola, Inc. Method for resistor trimming by metal migration
EP0546495B1 (en) 1991-12-09 1997-03-12 Toshiba Lighting & Technology Corporation Fixing heater and method of manufacturing fixing heater
US5466484A (en) 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
BE1007868A3 (nl) 1993-12-10 1995-11-07 Koninkl Philips Electronics Nv Elektrische weerstand.
US5808197A (en) 1995-01-13 1998-09-15 Remec, Inc. Vehicle information and control system
US5679275A (en) 1995-07-03 1997-10-21 Motorola, Inc. Circuit and method of modifying characteristics of a utilization circuit
DE69531058D1 (de) 1995-12-20 2003-07-17 Ibm Halbleiter IC chip mit elektrisch verstellbaren Widerstandstrukturen
US6647614B1 (en) * 2000-10-20 2003-11-18 International Business Machines Corporation Method for changing an electrical resistance of a resistor
JP4268520B2 (ja) 2001-09-10 2009-05-27 マイクロブリッジ テクノロジーズ インコーポレイテッド パルス加熱および熱局所化を使用する抵抗体の効果的なトリミング方法
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor
US6960744B2 (en) 2003-08-04 2005-11-01 International Business Machines Corporation Electrically tunable on-chip resistor
US7351613B2 (en) * 2004-11-04 2008-04-01 Silicon Storage Technology, Inc. Method of trimming semiconductor elements with electrical resistance feedback
US7217981B2 (en) 2005-01-06 2007-05-15 International Business Machines Corporation Tunable temperature coefficient of resistance resistors and method of fabricating same
US8242876B2 (en) * 2008-09-17 2012-08-14 Stmicroelectronics, Inc. Dual thin film precision resistance trimming
US8547727B2 (en) * 2008-12-12 2013-10-01 Hewlett-Packard Development Company, L.P. Memristive device
IT1392556B1 (it) * 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura

Also Published As

Publication number Publication date
ITTO20100559A1 (it) 2011-12-31
US8952492B2 (en) 2015-02-10
US9429967B2 (en) 2016-08-30
US20150168968A1 (en) 2015-06-18
US20120001679A1 (en) 2012-01-05

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