IT1402165B1 - Resistore ad elevata precisione e relativo metodo di calibratura - Google Patents
Resistore ad elevata precisione e relativo metodo di calibraturaInfo
- Publication number
- IT1402165B1 IT1402165B1 ITTO2010A000559A ITTO20100559A IT1402165B1 IT 1402165 B1 IT1402165 B1 IT 1402165B1 IT TO2010A000559 A ITTO2010A000559 A IT TO2010A000559A IT TO20100559 A ITTO20100559 A IT TO20100559A IT 1402165 B1 IT1402165 B1 IT 1402165B1
- Authority
- IT
- Italy
- Prior art keywords
- high precision
- calibration method
- precision resistor
- relative calibration
- relative
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/463—Sources providing an output which depends on temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
- H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
- H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000559A IT1402165B1 (it) | 2010-06-30 | 2010-06-30 | Resistore ad elevata precisione e relativo metodo di calibratura |
US13/173,214 US8952492B2 (en) | 2010-06-30 | 2011-06-30 | High-precision resistor and trimming method thereof |
US14/617,984 US9429967B2 (en) | 2010-06-30 | 2015-02-10 | High precision resistor and trimming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000559A IT1402165B1 (it) | 2010-06-30 | 2010-06-30 | Resistore ad elevata precisione e relativo metodo di calibratura |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20100559A1 ITTO20100559A1 (it) | 2011-12-31 |
IT1402165B1 true IT1402165B1 (it) | 2013-08-28 |
Family
ID=43640613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITTO2010A000559A IT1402165B1 (it) | 2010-06-30 | 2010-06-30 | Resistore ad elevata precisione e relativo metodo di calibratura |
Country Status (2)
Country | Link |
---|---|
US (2) | US8952492B2 (it) |
IT (1) | IT1402165B1 (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8723637B2 (en) | 2012-04-10 | 2014-05-13 | Analog Devices, Inc. | Method for altering electrical and thermal properties of resistive materials |
ITTO20120553A1 (it) * | 2012-06-22 | 2013-12-23 | St Microelectronics Srl | Dispositivo a resistore calibrabile elettricamente e relativo metodo di calibrazione |
US9059130B2 (en) | 2012-12-31 | 2015-06-16 | International Business Machines Corporation | Phase changing on-chip thermal heat sink |
US9972616B2 (en) * | 2013-09-27 | 2018-05-15 | Intel Corporation | Methods of forming tuneable temperature coefficient FR embedded resistors |
US9541456B2 (en) * | 2014-02-07 | 2017-01-10 | Sandisk Technologies Llc | Reference voltage generator for temperature sensor with trimming capability at two temperatures |
DE102015112919B4 (de) * | 2015-08-06 | 2019-12-24 | Infineon Technologies Ag | Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements |
US9400511B1 (en) | 2016-01-07 | 2016-07-26 | International Business Machines Corporation | Methods and control systems of resistance adjustment of resistors |
US10580976B2 (en) | 2018-03-19 | 2020-03-03 | Sandisk Technologies Llc | Three-dimensional phase change memory device having a laterally constricted element and method of making the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53136980A (en) | 1977-05-04 | 1978-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Resistance value correction method for poly crystal silicon resistor |
US4870472A (en) | 1984-10-18 | 1989-09-26 | Motorola, Inc. | Method for resistor trimming by metal migration |
EP0546495B1 (en) | 1991-12-09 | 1997-03-12 | Toshiba Lighting & Technology Corporation | Fixing heater and method of manufacturing fixing heater |
US5466484A (en) | 1993-09-29 | 1995-11-14 | Motorola, Inc. | Resistor structure and method of setting a resistance value |
BE1007868A3 (nl) | 1993-12-10 | 1995-11-07 | Koninkl Philips Electronics Nv | Elektrische weerstand. |
US5808197A (en) | 1995-01-13 | 1998-09-15 | Remec, Inc. | Vehicle information and control system |
US5679275A (en) | 1995-07-03 | 1997-10-21 | Motorola, Inc. | Circuit and method of modifying characteristics of a utilization circuit |
DE69531058D1 (de) | 1995-12-20 | 2003-07-17 | Ibm | Halbleiter IC chip mit elektrisch verstellbaren Widerstandstrukturen |
US6647614B1 (en) * | 2000-10-20 | 2003-11-18 | International Business Machines Corporation | Method for changing an electrical resistance of a resistor |
JP4268520B2 (ja) | 2001-09-10 | 2009-05-27 | マイクロブリッジ テクノロジーズ インコーポレイテッド | パルス加熱および熱局所化を使用する抵抗体の効果的なトリミング方法 |
US6621404B1 (en) * | 2001-10-23 | 2003-09-16 | Lsi Logic Corporation | Low temperature coefficient resistor |
US6960744B2 (en) | 2003-08-04 | 2005-11-01 | International Business Machines Corporation | Electrically tunable on-chip resistor |
US7351613B2 (en) * | 2004-11-04 | 2008-04-01 | Silicon Storage Technology, Inc. | Method of trimming semiconductor elements with electrical resistance feedback |
US7217981B2 (en) | 2005-01-06 | 2007-05-15 | International Business Machines Corporation | Tunable temperature coefficient of resistance resistors and method of fabricating same |
US8242876B2 (en) * | 2008-09-17 | 2012-08-14 | Stmicroelectronics, Inc. | Dual thin film precision resistance trimming |
US8547727B2 (en) * | 2008-12-12 | 2013-10-01 | Hewlett-Packard Development Company, L.P. | Memristive device |
IT1392556B1 (it) * | 2008-12-18 | 2012-03-09 | St Microelectronics Rousset | Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura |
-
2010
- 2010-06-30 IT ITTO2010A000559A patent/IT1402165B1/it active
-
2011
- 2011-06-30 US US13/173,214 patent/US8952492B2/en active Active
-
2015
- 2015-02-10 US US14/617,984 patent/US9429967B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
ITTO20100559A1 (it) | 2011-12-31 |
US8952492B2 (en) | 2015-02-10 |
US9429967B2 (en) | 2016-08-30 |
US20150168968A1 (en) | 2015-06-18 |
US20120001679A1 (en) | 2012-01-05 |
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