US5673218A
(en)
|
1996-03-05 |
1997-09-30 |
Shepard; Daniel R. |
Dual-addressed rectifier storage device
|
TW587252B
(en)
*
|
2000-01-18 |
2004-05-11 |
Hitachi Ltd |
Semiconductor memory device and data processing device
|
EP1130516A1
(en)
*
|
2000-03-01 |
2001-09-05 |
Hewlett-Packard Company, A Delaware Corporation |
Address mapping in solid state storage device
|
DE10020128A1
(de)
*
|
2000-04-14 |
2001-10-18 |
Infineon Technologies Ag |
MRAM-Speicher
|
US6956757B2
(en)
*
|
2000-06-22 |
2005-10-18 |
Contour Semiconductor, Inc. |
Low cost high density rectifier matrix memory
|
JP4353393B2
(ja)
|
2001-06-05 |
2009-10-28 |
株式会社ルネサステクノロジ |
半導体集積回路装置
|
KR100582148B1
(ko)
*
|
2001-07-17 |
2006-05-22 |
산요덴키가부시키가이샤 |
반도체 메모리 장치
|
US6504742B1
(en)
*
|
2001-10-31 |
2003-01-07 |
Hewlett-Packard Company |
3-D memory device for large storage capacity
|
JP2003151262A
(ja)
*
|
2001-11-15 |
2003-05-23 |
Toshiba Corp |
磁気ランダムアクセスメモリ
|
US6743641B2
(en)
|
2001-12-20 |
2004-06-01 |
Micron Technology, Inc. |
Method of improving surface planarity prior to MRAM bit material deposition
|
US6621739B2
(en)
|
2002-01-18 |
2003-09-16 |
Sandisk Corporation |
Reducing the effects of noise in non-volatile memories through multiple reads
|
JP2004023062A
(ja)
*
|
2002-06-20 |
2004-01-22 |
Nec Electronics Corp |
半導体装置とその製造方法
|
US6856030B2
(en)
*
|
2002-07-08 |
2005-02-15 |
Viciciv Technology |
Semiconductor latches and SRAM devices
|
US7042035B2
(en)
*
|
2002-08-02 |
2006-05-09 |
Unity Semiconductor Corporation |
Memory array with high temperature wiring
|
US20040098545A1
(en)
*
|
2002-11-15 |
2004-05-20 |
Pline Steven L. |
Transferring data in selectable transfer modes
|
WO2004084228A1
(en)
*
|
2003-03-18 |
2004-09-30 |
Kabushiki Kaisha Toshiba |
Phase change memory device
|
JP2005353912A
(ja)
*
|
2004-06-11 |
2005-12-22 |
Renesas Technology Corp |
半導体記憶装置
|
US7286439B2
(en)
|
2004-12-30 |
2007-10-23 |
Sandisk 3D Llc |
Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders
|
KR100586553B1
(ko)
*
|
2005-01-07 |
2006-06-08 |
주식회사 하이닉스반도체 |
반도체 소자의 게이트 및 이의 형성 방법
|
WO2006080908A1
(en)
*
|
2005-01-25 |
2006-08-03 |
Chien-Chiang Chan |
A single chip having a magnetoresistive memory
|
US7338894B2
(en)
*
|
2005-01-26 |
2008-03-04 |
Freescale Semiconductor, Inc. |
Semiconductor device having nitridated oxide layer and method therefor
|
JP2006221364A
(ja)
*
|
2005-02-09 |
2006-08-24 |
Toshiba Corp |
半導体装置及びbios認証システム
|
KR100675517B1
(ko)
*
|
2005-09-09 |
2007-01-30 |
주식회사 엑셀반도체 |
시리얼 플래쉬 메모리 장치 및 프리차아지 방법
|
KR100723569B1
(ko)
*
|
2005-09-30 |
2007-05-31 |
가부시끼가이샤 도시바 |
상 변화 메모리 장치
|
US7593256B2
(en)
*
|
2006-03-28 |
2009-09-22 |
Contour Semiconductor, Inc. |
Memory array with readout isolation
|
US8120949B2
(en)
*
|
2006-04-27 |
2012-02-21 |
Avalanche Technology, Inc. |
Low-cost non-volatile flash-RAM memory
|
US7539046B2
(en)
*
|
2007-01-31 |
2009-05-26 |
Northern Lights Semiconductor Corp. |
Integrated circuit with magnetic memory
|
TWI381385B
(zh)
*
|
2007-05-04 |
2013-01-01 |
Macronix Int Co Ltd |
具有嵌入式多類型記憶體的記憶體結構
|
US7477545B2
(en)
*
|
2007-06-14 |
2009-01-13 |
Sandisk Corporation |
Systems for programmable chip enable and chip address in semiconductor memory
|
US7715255B2
(en)
*
|
2007-06-14 |
2010-05-11 |
Sandisk Corporation |
Programmable chip enable and chip address in semiconductor memory
|
JP5557419B2
(ja)
*
|
2007-10-17 |
2014-07-23 |
スパンション エルエルシー |
半導体装置
|
US7813157B2
(en)
*
|
2007-10-29 |
2010-10-12 |
Contour Semiconductor, Inc. |
Non-linear conductor memory
|
KR20090082784A
(ko)
|
2008-01-28 |
2009-07-31 |
삼성전자주식회사 |
Nvram 셀을 채용한 플래쉬 메모리 장치
|
US20090225621A1
(en)
*
|
2008-03-05 |
2009-09-10 |
Shepard Daniel R |
Split decoder storage array and methods of forming the same
|
US8521979B2
(en)
|
2008-05-29 |
2013-08-27 |
Micron Technology, Inc. |
Memory systems and methods for controlling the timing of receiving read data
|
US20090296445A1
(en)
*
|
2008-06-02 |
2009-12-03 |
Shepard Daniel R |
Diode decoder array with non-sequential layout and methods of forming the same
|
US7979757B2
(en)
*
|
2008-06-03 |
2011-07-12 |
Micron Technology, Inc. |
Method and apparatus for testing high capacity/high bandwidth memory devices
|
KR20090126077A
(ko)
*
|
2008-06-03 |
2009-12-08 |
삼성전자주식회사 |
메모리 반도체 장치 및 그 제조 방법
|
US8289760B2
(en)
|
2008-07-02 |
2012-10-16 |
Micron Technology, Inc. |
Multi-mode memory device and method having stacked memory dice, a logic die and a command processing circuit and operating in direct and indirect modes
|
US7855931B2
(en)
|
2008-07-21 |
2010-12-21 |
Micron Technology, Inc. |
Memory system and method using stacked memory device dice, and system using the memory system
|
US8756486B2
(en)
*
|
2008-07-02 |
2014-06-17 |
Micron Technology, Inc. |
Method and apparatus for repairing high capacity/high bandwidth memory devices
|
US8127204B2
(en)
|
2008-08-15 |
2012-02-28 |
Micron Technology, Inc. |
Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system
|
US8130528B2
(en)
|
2008-08-25 |
2012-03-06 |
Sandisk 3D Llc |
Memory system with sectional data lines
|
US8325556B2
(en)
*
|
2008-10-07 |
2012-12-04 |
Contour Semiconductor, Inc. |
Sequencing decoder circuit
|
US20100195393A1
(en)
*
|
2009-01-30 |
2010-08-05 |
Unity Semiconductor Corporation |
Data storage system with refresh in place
|
JP5632584B2
(ja)
|
2009-02-05 |
2014-11-26 |
ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. |
半導体装置
|
US8054673B2
(en)
|
2009-04-16 |
2011-11-08 |
Seagate Technology Llc |
Three dimensionally stacked non volatile memory units
|
US8223525B2
(en)
*
|
2009-12-15 |
2012-07-17 |
Sandisk 3D Llc |
Page register outside array and sense amplifier interface
|
US8213243B2
(en)
*
|
2009-12-15 |
2012-07-03 |
Sandisk 3D Llc |
Program cycle skip
|
CN104716139B
(zh)
*
|
2009-12-25 |
2018-03-30 |
株式会社半导体能源研究所 |
半导体装置
|
JP5289353B2
(ja)
*
|
2010-02-05 |
2013-09-11 |
株式会社東芝 |
半導体記憶装置
|
WO2011114866A1
(en)
|
2010-03-17 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
US8355281B2
(en)
*
|
2010-04-20 |
2013-01-15 |
Micron Technology, Inc. |
Flash memory having multi-level architecture
|
US8416624B2
(en)
|
2010-05-21 |
2013-04-09 |
SanDisk Technologies, Inc. |
Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
|
WO2012002186A1
(en)
|
2010-07-02 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP2012256821A
(ja)
*
|
2010-09-13 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
TWI670711B
(zh)
|
2010-09-14 |
2019-09-01 |
日商半導體能源研究所股份有限公司 |
記憶體裝置和半導體裝置
|
KR101188263B1
(ko)
|
2010-10-14 |
2012-10-05 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치
|
KR101924231B1
(ko)
|
2010-10-29 |
2018-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치
|
KR101973212B1
(ko)
|
2010-11-05 |
2019-04-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US8400808B2
(en)
|
2010-12-16 |
2013-03-19 |
Micron Technology, Inc. |
Phase interpolators and push-pull buffers
|
US9601178B2
(en)
*
|
2011-01-26 |
2017-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
JP6000560B2
(ja)
*
|
2011-02-02 |
2016-09-28 |
株式会社半導体エネルギー研究所 |
半導体メモリ装置
|
TWI520273B
(zh)
*
|
2011-02-02 |
2016-02-01 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
WO2012121265A1
(en)
*
|
2011-03-10 |
2012-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and method for manufacturing the same
|
US8446772B2
(en)
|
2011-08-04 |
2013-05-21 |
Sandisk Technologies Inc. |
Memory die self-disable if programmable element is not trusted
|
US9779814B2
(en)
*
|
2011-08-09 |
2017-10-03 |
Flashsilicon Incorporation |
Non-volatile static random access memory devices and methods of operations
|
US20130083048A1
(en)
*
|
2011-09-29 |
2013-04-04 |
Advanced Micro Devices, Inc. |
Integrated circuit with active memory and passive variable resistive memory with shared memory control logic and method of making same
|
US9230615B2
(en)
*
|
2011-10-24 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method for driving the same
|
JP6105266B2
(ja)
|
2011-12-15 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
記憶装置
|
JP2013161878A
(ja)
*
|
2012-02-02 |
2013-08-19 |
Renesas Electronics Corp |
半導体装置、および半導体装置の製造方法
|
US9312257B2
(en)
|
2012-02-29 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101975528B1
(ko)
|
2012-07-17 |
2019-05-07 |
삼성전자주식회사 |
패스트 어레이 영역을 갖는 반도체 메모리 셀 어레이 및 그것을 포함하는 반도체 메모리
|
WO2014112758A1
(ko)
*
|
2013-01-18 |
2014-07-24 |
(주)실리콘화일 |
듀얼 기판 스택 메모리
|
US9536840B2
(en)
|
2013-02-12 |
2017-01-03 |
Qualcomm Incorporated |
Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods
|
US8947944B2
(en)
|
2013-03-15 |
2015-02-03 |
Sandisk 3D Llc |
Program cycle skip evaluation before write operations in non-volatile memory
|
US9171608B2
(en)
|
2013-03-15 |
2015-10-27 |
Qualcomm Incorporated |
Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods
|
US8947972B2
(en)
|
2013-03-15 |
2015-02-03 |
Sandisk 3D Llc |
Dynamic address grouping for parallel programming in non-volatile memory
|
US9165088B2
(en)
|
2013-07-08 |
2015-10-20 |
Hewlett-Packard Development Company, L.P. |
Apparatus and method for multi-mode storage
|
US9171597B2
(en)
|
2013-08-30 |
2015-10-27 |
Micron Technology, Inc. |
Apparatuses and methods for providing strobe signals to memories
|
US9165623B2
(en)
*
|
2013-10-13 |
2015-10-20 |
Taiwan Semiconductor Manufacturing Company Limited |
Memory arrangement
|
US9711225B2
(en)
|
2013-10-16 |
2017-07-18 |
Sandisk Technologies Llc |
Regrouping and skipping cycles in non-volatile memory
|
JP6139370B2
(ja)
*
|
2013-10-17 |
2017-05-31 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US9773547B2
(en)
*
|
2014-01-31 |
2017-09-26 |
Hewlett Packard Enterprise Development Lp |
Non-volatile memory with multiple latency tiers
|
WO2015170220A1
(en)
*
|
2014-05-09 |
2015-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and electronic device
|
JP6580863B2
(ja)
*
|
2014-05-22 |
2019-09-25 |
株式会社半導体エネルギー研究所 |
半導体装置、健康管理システム
|
US10700039B2
(en)
|
2014-06-16 |
2020-06-30 |
Intel Corporation |
Silicon die with integrated high voltage devices
|
US9564215B2
(en)
|
2015-02-11 |
2017-02-07 |
Sandisk Technologies Llc |
Independent sense amplifier addressing and quota sharing in non-volatile memory
|
KR20160124294A
(ko)
|
2015-04-16 |
2016-10-27 |
삼성전자주식회사 |
주변 영역 상에 적층된 셀 영역을 갖는 반도체 소자 및 그의 제조방법
|
JPWO2016181256A1
(ja)
*
|
2015-05-12 |
2018-03-08 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品および電子機器
|
US9697874B1
(en)
*
|
2015-06-09 |
2017-07-04 |
Crossbar, Inc. |
Monolithic memory comprising 1T1R code memory and 1TnR storage class memory
|
US9842651B2
(en)
|
2015-11-25 |
2017-12-12 |
Sunrise Memory Corporation |
Three-dimensional vertical NOR flash thin film transistor strings
|
US9892800B2
(en)
*
|
2015-09-30 |
2018-02-13 |
Sunrise Memory Corporation |
Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
|
US11120884B2
(en)
|
2015-09-30 |
2021-09-14 |
Sunrise Memory Corporation |
Implementing logic function and generating analog signals using NOR memory strings
|
US10861902B2
(en)
|
2017-06-13 |
2020-12-08 |
Samsung Electronics Co., Ltd. |
Semiconductor device having magnetic tunnel junction pattern
|
KR102366798B1
(ko)
*
|
2017-06-13 |
2022-02-25 |
삼성전자주식회사 |
반도체 소자
|
KR102482896B1
(ko)
|
2017-12-28 |
2022-12-30 |
삼성전자주식회사 |
이종 휘발성 메모리 칩들을 포함하는 메모리 장치 및 이를 포함하는 전자 장치
|
CN110010170B
(zh)
*
|
2018-01-05 |
2021-04-02 |
旺宏电子股份有限公司 |
存储装置的操作方法及其存储系统
|
JP7061524B2
(ja)
*
|
2018-06-28 |
2022-04-28 |
株式会社Screenホールディングス |
基板処理装置のメンテナンス装置およびメンテナンス方法
|
US11569243B2
(en)
*
|
2018-09-25 |
2023-01-31 |
Intel Corporation |
Stacked-substrate DRAM semiconductor devices
|
JP2020064969A
(ja)
|
2018-10-17 |
2020-04-23 |
キオクシア株式会社 |
半導体装置およびその製造方法
|
CN113488505B
(zh)
*
|
2019-04-30 |
2022-09-30 |
长江存储科技有限责任公司 |
具有三维相变存储器的三维存储设备
|
WO2020232573A1
(en)
*
|
2019-05-17 |
2020-11-26 |
Yangtze Memory Technologies Co., Ltd. |
Three-dimensional memory device with static random-access memory
|
CN110291586B
(zh)
|
2019-05-17 |
2020-10-30 |
长江存储科技有限责任公司 |
具有静态随机存取存储器的三维存储器件的高速缓存程序操作
|
KR102617083B1
(ko)
*
|
2019-05-17 |
2023-12-22 |
양쯔 메모리 테크놀로지스 씨오., 엘티디. |
정적 랜덤 액세스 메모리를 갖는 3차원 메모리 디바이스의 데이터 버퍼링 연산
|
JP7320227B2
(ja)
*
|
2019-09-13 |
2023-08-03 |
本田技研工業株式会社 |
半導体装置
|
US11515309B2
(en)
|
2019-12-19 |
2022-11-29 |
Sunrise Memory Corporation |
Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
|
WO2021207050A1
(en)
|
2020-04-08 |
2021-10-14 |
Sunrise Memory Corporation |
Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional nor memory string array
|
US11842777B2
(en)
|
2020-11-17 |
2023-12-12 |
Sunrise Memory Corporation |
Methods for reducing disturb errors by refreshing data alongside programming or erase operations
|
TW202310429A
(zh)
|
2021-07-16 |
2023-03-01 |
美商日升存儲公司 |
薄膜鐵電電晶體的三維記憶體串陣列
|
US11974422B2
(en)
*
|
2021-11-04 |
2024-04-30 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device
|