HK1092280A1 - Stage system, exposure apparatus and exposure method - Google Patents

Stage system, exposure apparatus and exposure method

Info

Publication number
HK1092280A1
HK1092280A1 HK06112663.5A HK06112663A HK1092280A1 HK 1092280 A1 HK1092280 A1 HK 1092280A1 HK 06112663 A HK06112663 A HK 06112663A HK 1092280 A1 HK1092280 A1 HK 1092280A1
Authority
HK
Hong Kong
Prior art keywords
holder
substrate
exposure
liquid
stage system
Prior art date
Application number
HK06112663.5A
Other languages
English (en)
Inventor
Yasufumi Nishii
Kenichi Shiraishi
Hirotaka Kohno
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1092280A1 publication Critical patent/HK1092280A1/xx

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
HK06112663.5A 2003-12-15 2006-11-17 Stage system, exposure apparatus and exposure method HK1092280A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003416712 2003-12-15
PCT/JP2004/018702 WO2005057636A1 (ja) 2003-12-15 2004-12-15 ステージ装置、露光装置、及び露光方法

Publications (1)

Publication Number Publication Date
HK1092280A1 true HK1092280A1 (en) 2007-02-02

Family

ID=34675168

Family Applications (1)

Application Number Title Priority Date Filing Date
HK06112663.5A HK1092280A1 (en) 2003-12-15 2006-11-17 Stage system, exposure apparatus and exposure method

Country Status (9)

Country Link
US (3) US7982857B2 (ko)
EP (1) EP1699073B1 (ko)
JP (8) JP4720506B2 (ko)
KR (8) KR101281397B1 (ko)
CN (1) CN100487860C (ko)
AT (1) ATE491221T1 (ko)
DE (1) DE602004030481D1 (ko)
HK (1) HK1092280A1 (ko)
WO (1) WO2005057636A1 (ko)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
KR101124179B1 (ko) 2003-04-09 2012-03-27 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101129213B1 (ko) * 2003-04-10 2012-03-27 가부시키가이샤 니콘 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
TWI474132B (zh) 2003-10-28 2015-02-21 尼康股份有限公司 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612338B (zh) 2003-11-20 2018-01-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
EP3139214B1 (en) * 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101281397B1 (ko) * 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI360837B (en) 2004-02-06 2012-03-21 Nikon Corp Polarization changing device, optical illumination
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101433496B1 (ko) 2004-06-09 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
SG10201710046XA (en) * 2004-06-09 2018-01-30 Nippon Kogaku Kk Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
KR101378688B1 (ko) 2004-06-21 2014-03-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101106496B1 (ko) 2004-09-17 2012-01-20 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조 방법
WO2006064851A1 (ja) 2004-12-15 2006-06-22 Nikon Corporation 基板保持装置、露光装置、及びデバイス製造方法
JP2006173527A (ja) * 2004-12-20 2006-06-29 Sony Corp 露光装置
SG124359A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101455551B1 (ko) 2005-05-12 2014-10-27 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
WO2007007723A1 (ja) * 2005-07-08 2007-01-18 Nikon Corporation 液浸露光用基板、露光方法及びデバイス製造方法
JP5045008B2 (ja) * 2005-07-08 2012-10-10 株式会社ニコン 液浸露光用基板、露光方法及びデバイス製造方法
US7839483B2 (en) * 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090009733A1 (en) * 2007-07-06 2009-01-08 Canon Kabushiki Kaisha Exposure apparatus
JP4961299B2 (ja) * 2007-08-08 2012-06-27 キヤノン株式会社 露光装置およびデバイス製造方法
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
CN101681125B (zh) 2007-10-16 2013-08-21 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036211A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
KR101695034B1 (ko) 2008-05-28 2017-01-10 가부시키가이샤 니콘 공간 광 변조기의 검사 장치, 조명 광학계, 노광 장치, 검사 방법, 조명 광학계의 조정 방법, 조명 방법, 노광 방법, 및 디바이스 제조 방법
JP5097166B2 (ja) * 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置の動作方法
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
NL2005874A (en) * 2010-01-22 2011-07-25 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
JP5131312B2 (ja) * 2010-04-26 2013-01-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
US9329496B2 (en) * 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
EP2856262B1 (en) * 2012-05-29 2019-09-25 ASML Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
KR102054322B1 (ko) 2012-05-29 2019-12-10 에이에스엠엘 네델란즈 비.브이. 대상물 홀더 및 리소그래피 장치
JP6155581B2 (ja) * 2012-09-14 2017-07-05 株式会社ニコン 露光装置、露光方法、デバイス製造方法
NL2016469A (en) 2015-04-29 2016-11-07 Asml Netherlands Bv A Support Apparatus, a Lithographic Apparatus and a Device Manufacturing Method.
KR102053480B1 (ko) * 2015-09-14 2019-12-06 한미반도체 주식회사 반도체 패키지 건조장치 및 이를 구비하는 반도체 스트립 절단 시스템
KR102481380B1 (ko) 2015-10-29 2022-12-27 삼성디스플레이 주식회사 기판 절단용 스테이지 및 기판 절단 장치
JP6751759B2 (ja) 2015-12-08 2020-09-09 エーエスエムエル ネザーランズ ビー.ブイ. 基板テーブル、リソグラフィ装置、及びリソグラフィ装置を操作する方法
NL2017698A (en) 2015-12-15 2017-06-26 Asml Netherlands Bv A Substrate Holder, a Lithographic Apparatus and Method of Manufacturing Devices
US10705426B2 (en) 2016-05-12 2020-07-07 Asml Netherlands B.V. Extraction body for lithographic apparatus
JP6758920B2 (ja) * 2016-06-01 2020-09-23 キヤノン株式会社 チャック、基板保持装置、パターン形成装置、及び物品の製造方法
JP6732121B2 (ja) * 2017-05-25 2020-07-29 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理システム
JP6418281B2 (ja) * 2017-06-07 2018-11-07 株式会社ニコン 露光装置
JP7015910B2 (ja) 2017-10-12 2022-02-03 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置において使用される基板ホルダ
CA3095734A1 (en) * 2018-02-27 2019-09-06 Georgia Tech Research Corporation System, devices, and methods providing hydrodynamic barriers
JP7312653B2 (ja) 2019-09-13 2023-07-21 株式会社Screenホールディングス 基板処理装置

Family Cites Families (198)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US6246204B1 (en) 1994-06-27 2001-06-12 Nikon Corporation Electromagnetic alignment and scanning apparatus
JP3800616B2 (ja) 1994-06-27 2006-07-26 株式会社ニコン 目標物移動装置、位置決め装置及び可動ステージ装置
JP3266229B2 (ja) * 1994-06-30 2002-03-18 東京エレクトロン株式会社 処理方法
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP2000505958A (ja) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 2個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP4282043B2 (ja) * 1999-12-06 2009-06-17 キヤノン株式会社 記録液体供給通路、記録液体収納容器、およびこれらを備える記録液体供給装置、並びにその表面改質方法
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
JP2002158154A (ja) * 2000-11-16 2002-05-31 Canon Inc 露光装置
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
DE10123027B4 (de) * 2001-05-11 2005-07-21 Evotec Oai Ag Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
TWI242691B (en) 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101349876B (zh) 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004184800A (ja) * 2002-12-05 2004-07-02 Dainippon Screen Mfg Co Ltd パターン形成装置およびパターン形成方法
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
WO2004053955A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US7514699B2 (en) 2002-12-19 2009-04-07 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
JP4604452B2 (ja) 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
EP2950148B1 (en) 2003-04-10 2016-09-21 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
KR101129213B1 (ko) 2003-04-10 2012-03-27 가부시키가이샤 니콘 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로
SG139736A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP1614000B1 (en) 2003-04-17 2012-01-18 Nikon Corporation Immersion lithographic apparatus
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (ja) 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
CN101430508B (zh) 2003-09-03 2011-08-10 株式会社尼康 为浸没光刻提供流体的装置和方法
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
DE60302897T2 (de) 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
EP1531362A3 (en) 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005054953A2 (en) 2003-11-24 2005-06-16 Carl-Zeiss Smt Ag Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10355301B3 (de) 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
KR101281397B1 (ko) * 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101407204B1 (ko) 2004-01-14 2014-06-13 칼 짜이스 에스엠티 게엠베하 투영 대물렌즈
KR101165862B1 (ko) 2004-01-16 2012-07-17 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US8852850B2 (en) 2004-02-03 2014-10-07 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
JP2007522508A (ja) 2004-02-13 2007-08-09 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィック投影露光装置のための投影対物レンズ
CN1922528A (zh) 2004-02-18 2007-02-28 康宁股份有限公司 用于具有深紫外光的高数值孔径成象的反折射成象系统
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005111722A2 (en) 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR20170028451A (ko) 2004-05-17 2017-03-13 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119369A1 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag Projection system with compensation of intensity variatons and compensation element therefor
KR101257960B1 (ko) 2004-06-04 2013-04-24 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템

Also Published As

Publication number Publication date
EP1699073A1 (en) 2006-09-06
JP2011146722A (ja) 2011-07-28
US20180004096A1 (en) 2018-01-04
KR20150031456A (ko) 2015-03-24
KR101499405B1 (ko) 2015-03-05
JP2012142609A (ja) 2012-07-26
KR20140046472A (ko) 2014-04-18
ATE491221T1 (de) 2010-12-15
JP2019015984A (ja) 2019-01-31
KR101547037B1 (ko) 2015-08-24
US9798245B2 (en) 2017-10-24
KR20060113693A (ko) 2006-11-02
KR101281397B1 (ko) 2013-07-02
KR101941351B1 (ko) 2019-01-22
EP1699073A4 (en) 2008-09-03
EP1699073B1 (en) 2010-12-08
JP2014103414A (ja) 2014-06-05
JP5440523B2 (ja) 2014-03-12
US20070109521A1 (en) 2007-05-17
KR101345443B1 (ko) 2013-12-27
DE602004030481D1 (de) 2011-01-20
JP5910645B2 (ja) 2016-04-27
JP6319237B2 (ja) 2018-05-09
CN100487860C (zh) 2009-05-13
JP2017201429A (ja) 2017-11-09
KR101681852B1 (ko) 2016-12-01
KR20190007529A (ko) 2019-01-22
KR20130100192A (ko) 2013-09-09
KR20160139051A (ko) 2016-12-06
KR20120091478A (ko) 2012-08-17
JPWO2005057636A1 (ja) 2007-12-13
JP5360085B2 (ja) 2013-12-04
JP5699978B2 (ja) 2015-04-15
US7982857B2 (en) 2011-07-19
WO2005057636A1 (ja) 2005-06-23
CN1894773A (zh) 2007-01-10
US20110080574A1 (en) 2011-04-07
KR101119813B1 (ko) 2012-03-06
JP2015232730A (ja) 2015-12-24
JP4720506B2 (ja) 2011-07-13
JP2011091455A (ja) 2011-05-06
KR20110136892A (ko) 2011-12-21

Similar Documents

Publication Publication Date Title
HK1092280A1 (en) Stage system, exposure apparatus and exposure method
TW201614390A (en) Exposure equipment, exposure method and device manufacturing method
SG157962A1 (en) Exposure apparatus and method for producing device
NO20072184L (no) Fremgangsmate og apparat for bronnbehandling
EP1624481A4 (en) EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
SG158744A1 (en) Exposure apparatus and method for producing device
EP1672682A4 (en) SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
EP1571698A4 (en) EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
EP1703548A4 (en) EXPOSURE APPARATUS AND METHOD, DEVICE THEREFOR
HK1142964A1 (en) Cleanup method and immersion lithography apparatus
SG165169A1 (en) Liquid immersion exposure apparatus
SG148015A1 (en) Lithographic apparatus and device manufacturing method
DK0781255T3 (da) Fremgangsmåde til behandling af vand
DE602004015190D1 (de) Wässrige Tinte und Tintenstrahlaufzeichnungsverfahren, Tintenstrahlaufzeichnungsgerät und Bildgebungsverfahren hiermit
TW200520052A (en) Exposure apparatus, exposure method, and device-producing method
EP1385052A3 (en) Orientation dependent shielding for use with dipole illumination techniques
TW200622838A (en) Controlling a light source of an optical pointing device based on surface quality
DE602006016401D1 (de) Vorrichtung und zugeordnetes Verfahren zur Erleichterung der Hintergrundverarbeitung von "Push"-Inhalt
EP1557276A4 (en) LIGHT SOURCE FOR IMAGE WRITING DEVICE AND METHOD FOR PRODUCING THE SAME
DE60019818D1 (de) Methode und Apparat zur Rückgewinnung eines Lösungsmittels
GB0325578D0 (en) Method for treating black liquor
TW200705110A (en) Exposure apparatus, exposure method, and device production method
ATE305438T1 (de) Verfahren zur gewinnung von rhenium
ATE377512T1 (de) Verfahren und system zum bedrucken mehrerer träger
GB2401362B (en) Apparatus and method for eliminating top speck on float glass

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20191215