US4509852A
(en)
*
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
JPS5919912A
(ja)
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
JPH04305915A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるlsi製造縮小投影露光装置の光学系
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
US6246204B1
(en)
|
1994-06-27 |
2001-06-12 |
Nikon Corporation |
Electromagnetic alignment and scanning apparatus
|
JP3800616B2
(ja)
|
1994-06-27 |
2006-07-26 |
株式会社ニコン |
目標物移動装置、位置決め装置及び可動ステージ装置
|
JP3266229B2
(ja)
*
|
1994-06-30 |
2002-03-18 |
東京エレクトロン株式会社 |
処理方法
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
JPH08316125A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JP4029182B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
露光方法
|
JP4029183B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
DE69735016T2
(de)
|
1996-12-24 |
2006-08-17 |
Asml Netherlands B.V. |
Lithographisches Gerät mit zwei Objekthaltern
|
JP3747566B2
(ja)
*
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
WO1999049504A1
(fr)
|
1998-03-26 |
1999-09-30 |
Nikon Corporation |
Procede et systeme d'exposition par projection
|
US6032997A
(en)
*
|
1998-04-16 |
2000-03-07 |
Excimer Laser Systems |
Vacuum chuck
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
JP4282043B2
(ja)
*
|
1999-12-06 |
2009-06-17 |
キヤノン株式会社 |
記録液体供給通路、記録液体収納容器、およびこれらを備える記録液体供給装置、並びにその表面改質方法
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
JP2002158154A
(ja)
*
|
2000-11-16 |
2002-05-31 |
Canon Inc |
露光装置
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
DE10123027B4
(de)
*
|
2001-05-11 |
2005-07-21 |
Evotec Oai Ag |
Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
CN100462844C
(zh)
|
2002-08-23 |
2009-02-18 |
株式会社尼康 |
投影光学系统、微影方法、曝光装置及使用此装置的方法
|
US6988327B2
(en)
*
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Methods and systems for processing a substrate using a dynamic liquid meniscus
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1429188B1
(en)
|
2002-11-12 |
2013-06-19 |
ASML Netherlands B.V. |
Lithographic projection apparatus
|
JP3977324B2
(ja)
|
2002-11-12 |
2007-09-19 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ装置
|
CN101382738B
(zh)
|
2002-11-12 |
2011-01-12 |
Asml荷兰有限公司 |
光刻投射装置
|
CN100568101C
(zh)
|
2002-11-12 |
2009-12-09 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JP2004184800A
(ja)
*
|
2002-12-05 |
2004-07-02 |
Dainippon Screen Mfg Co Ltd |
パターン形成装置およびパターン形成方法
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
CN1723541B
(zh)
|
2002-12-10 |
2010-06-02 |
株式会社尼康 |
曝光装置和器件制造方法
|
US6992750B2
(en)
|
2002-12-10 |
2006-01-31 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
AU2003289239A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure system and device producing method
|
ATE424026T1
(de)
*
|
2002-12-13 |
2009-03-15 |
Koninkl Philips Electronics Nv |
Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
|
ATE335272T1
(de)
|
2002-12-19 |
2006-08-15 |
Koninkl Philips Electronics Nv |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
JP4364805B2
(ja)
|
2002-12-19 |
2009-11-18 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
層上にスポットを照射する方法及び装置
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
US7090964B2
(en)
|
2003-02-21 |
2006-08-15 |
Asml Holding N.V. |
Lithographic printing with polarized light
|
JP4604452B2
(ja)
|
2003-02-26 |
2011-01-05 |
株式会社ニコン |
露光装置、露光方法、及びデバイス製造方法
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
KR101177331B1
(ko)
|
2003-04-09 |
2012-08-30 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
JP4656057B2
(ja)
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
KR20140139139A
(ko)
|
2003-04-10 |
2014-12-04 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
KR101469405B1
(ko)
|
2003-04-10 |
2014-12-10 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
|
WO2004093160A2
(en)
*
|
2003-04-10 |
2004-10-28 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
ATE449982T1
(de)
|
2003-04-11 |
2009-12-15 |
Nikon Corp |
Reinigungsverfahren für optik in immersionslithographie
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
SG2012031217A
(en)
|
2003-04-11 |
2015-09-29 |
Nippon Kogaku Kk |
Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
|
SG194246A1
(en)
|
2003-04-17 |
2013-11-29 |
Nikon Corp |
Optical arrangement of autofocus elements for use with immersion lithography
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
TWI282487B
(en)
|
2003-05-23 |
2007-06-11 |
Canon Kk |
Projection optical system, exposure apparatus, and device manufacturing method
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Asml Netherlands Bv |
微影裝置及元件製造方法
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7684008B2
(en)
|
2003-06-11 |
2010-03-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
TWI409853B
(zh)
|
2003-06-13 |
2013-09-21 |
尼康股份有限公司 |
An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP3862678B2
(ja)
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
DE60308161T2
(de)
|
2003-06-27 |
2007-08-09 |
Asml Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1639391A4
(en)
|
2003-07-01 |
2009-04-29 |
Nikon Corp |
USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS
|
EP2466382B1
(en)
|
2003-07-08 |
2014-11-26 |
Nikon Corporation |
Wafer table for immersion lithography
|
US7738074B2
(en)
|
2003-07-16 |
2010-06-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
EP1500982A1
(en)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
US7779781B2
(en)
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7145643B2
(en)
|
2003-08-07 |
2006-12-05 |
Asml Netherlands B.V. |
Interface unit, lithographic projection apparatus comprising such an interface unit and a device manufacturing method
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
TWI263859B
(en)
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JP4168880B2
(ja)
|
2003-08-29 |
2008-10-22 |
株式会社ニコン |
液浸用溶液
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
TWI245163B
(en)
|
2003-08-29 |
2005-12-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
KR101523180B1
(ko)
|
2003-09-03 |
2015-05-26 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
JP4378136B2
(ja)
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP3870182B2
(ja)
|
2003-09-09 |
2007-01-17 |
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|
US6961186B2
(en)
|
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|
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(en)
|
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|
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(de)
|
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|
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(en)
|
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|
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(en)
|
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2008-05-06 |
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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Methods and compositions for providing photoresist with improved properties for contacting liquids
|
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(en)
|
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|
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(en)
|
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|
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(ja)
|
2003-11-05 |
2007-09-06 |
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|
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(en)
|
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2011-04-12 |
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|
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(ja)
|
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2005-06-09 |
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|
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(en)
|
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2007-07-25 |
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(de)
|
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2005-06-23 |
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|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
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Immersion lithographic process using a conforming immersion medium
|
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(ja)
|
2003-12-08 |
2005-06-30 |
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|
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(ja)
|
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2005-06-30 |
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|
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(ko)
|
2003-12-15 |
2012-03-06 |
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|
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(en)
|
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2008-06-10 |
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|
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(en)
|
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2005-06-30 |
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|
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(en)
|
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2005-11-10 |
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Microlithographic projection exposure apparatus and immersion liquid therefore
|
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(ja)
|
2003-12-17 |
2009-08-05 |
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|
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(en)
|
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Microlithography projection objective with crystal elements
|
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(ja)
|
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2009-09-02 |
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|
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(en)
|
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Catadioptric projection objective with geometric beam splitting
|
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(en)
|
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2008-12-02 |
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Projection objective for immersion lithography
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
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|
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(en)
|
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|
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(en)
|
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|
US20050147920A1
(en)
|
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2005-07-07 |
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Method and system for immersion lithography
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
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Moving lens for immersion optical lithography
|
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(ja)
|
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2009-11-25 |
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|
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(ja)
|
2004-01-07 |
2010-03-10 |
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|
US20050153424A1
(en)
|
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2005-07-14 |
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Fluid barrier with transparent areas for immersion lithography
|
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(en)
|
2004-01-14 |
2005-07-28 |
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Catadioptric projection objective
|
CN101726863B
(zh)
|
2004-01-16 |
2012-08-29 |
卡尔蔡司Smt有限责任公司 |
偏振调制光学元件
|
WO2005069078A1
(en)
|
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2005-07-28 |
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Microlithographic projection exposure apparatus with immersion projection lens
|
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(en)
|
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2010-03-03 |
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Exposure apparatus and measuring device for a projection lens
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
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Immersion liquids with siloxane polymer for immersion lithography
|
US8852850B2
(en)
|
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2014-10-07 |
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Method of photolithography using a fluid and a system thereof
|
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(en)
|
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2005-08-18 |
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Projection objective for a microlithographic projection exposure apparatus
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
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|
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(ja)
|
2004-02-13 |
2007-08-09 |
カール・ツアイス・エスエムテイ・アーゲー |
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|
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(en)
|
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2006-11-15 |
Corning Incorporated |
Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
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(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
US7084960B2
(en)
|
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2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
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|
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(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
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|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
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|
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(en)
|
2004-04-08 |
2005-10-20 |
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Imaging system with mirror group
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
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|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
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|
US8054448B2
(en)
|
2004-05-04 |
2011-11-08 |
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Apparatus and method for providing fluid for immersion lithography
|
US7091502B2
(en)
|
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2006-08-15 |
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|
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(ko)
|
2004-05-17 |
2014-12-03 |
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|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
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|
US7486381B2
(en)
|
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2009-02-03 |
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|
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(en)
|
2004-06-04 |
2005-12-15 |
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|
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(ko)
|
2004-06-04 |
2012-11-07 |
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|