FR2737938B1 - Dispositif d'affichage a cristaux liquides et un procede de fabrication d'un tel dispositif - Google Patents

Dispositif d'affichage a cristaux liquides et un procede de fabrication d'un tel dispositif

Info

Publication number
FR2737938B1
FR2737938B1 FR9604605A FR9604605A FR2737938B1 FR 2737938 B1 FR2737938 B1 FR 2737938B1 FR 9604605 A FR9604605 A FR 9604605A FR 9604605 A FR9604605 A FR 9604605A FR 2737938 B1 FR2737938 B1 FR 2737938B1
Authority
FR
France
Prior art keywords
manufacturing
liquid crystal
crystal display
display device
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9604605A
Other languages
English (en)
Other versions
FR2737938A1 (fr
Inventor
Woo Sup Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19423806&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2737938(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of FR2737938A1 publication Critical patent/FR2737938A1/fr
Application granted granted Critical
Publication of FR2737938B1 publication Critical patent/FR2737938B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
FR9604605A 1995-08-19 1996-04-12 Dispositif d'affichage a cristaux liquides et un procede de fabrication d'un tel dispositif Expired - Lifetime FR2737938B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025538A KR100338480B1 (ko) 1995-08-19 1995-08-19 액정표시장치및그제조방법

Publications (2)

Publication Number Publication Date
FR2737938A1 FR2737938A1 (fr) 1997-02-21
FR2737938B1 true FR2737938B1 (fr) 1999-05-07

Family

ID=19423806

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9604605A Expired - Lifetime FR2737938B1 (fr) 1995-08-19 1996-04-12 Dispositif d'affichage a cristaux liquides et un procede de fabrication d'un tel dispositif

Country Status (6)

Country Link
US (2) US5825449A (fr)
JP (3) JP3734891B2 (fr)
KR (1) KR100338480B1 (fr)
DE (1) DE19624916C2 (fr)
FR (1) FR2737938B1 (fr)
GB (1) GB2307087B (fr)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100204071B1 (ko) * 1995-08-29 1999-06-15 구자홍 박막트랜지스터-액정표시장치 및 제조방법
JP3261699B2 (ja) * 1995-10-03 2002-03-04 セイコーエプソン株式会社 アクティブマトリクス基板
JP3527009B2 (ja) * 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR100223153B1 (ko) * 1996-05-23 1999-10-15 구자홍 액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치
KR100255591B1 (ko) 1997-03-06 2000-05-01 구본준 박막 트랜지스터 어레이의 배선 연결 구조 및 그 제조 방법
KR100255592B1 (ko) * 1997-03-19 2000-05-01 구본준 액정 표시 장치 구조 및 그 제조 방법
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
KR100289510B1 (ko) * 1997-05-26 2001-05-02 다니구찌 이찌로오, 기타오카 다카시 티에프티어레이기판및그것을이용한액정표시장치
KR100269520B1 (ko) * 1997-07-29 2000-10-16 구본준 박막트랜지스터, 액정표시장치와 그 제조방법
KR100243914B1 (ko) * 1997-07-29 2000-02-01 구본준 액정표시패널의 탭패드부 구조 및 그 제조방법
JP5043072B2 (ja) * 1997-10-14 2012-10-10 三星電子株式会社 液晶表示装置用基板、液晶表示装置及びその製造方法
JP4643774B2 (ja) * 1997-10-18 2011-03-02 三星電子株式会社 液晶表示装置及びその製造方法
JP3102392B2 (ja) * 1997-10-28 2000-10-23 日本電気株式会社 半導体デバイスおよびその製造方法
KR100322965B1 (ko) * 1998-03-27 2002-06-20 주식회사 현대 디스플레이 테크놀로지 액정표시소자의 제조방법
US6049365A (en) * 1998-05-07 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Liquid crystal displaying apparatus with a converter not exposed to liquid crystal
KR100556345B1 (ko) * 1998-11-24 2006-04-21 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시소자의 제조방법
TW413949B (en) * 1998-12-12 2000-12-01 Samsung Electronics Co Ltd Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same
US6287899B1 (en) 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
KR100580825B1 (ko) * 1999-01-29 2006-05-16 삼성전자주식회사 액티브 메트릭스 기판 제조방법 및 이에 의해 제조되는 게이트
KR100312259B1 (ko) * 1999-02-05 2001-11-03 구본준, 론 위라하디락사 액정표시장치의 불량패턴 제거방법 및 액정표시장치 구조
KR100304261B1 (ko) * 1999-04-16 2001-09-26 윤종용 테이프 캐리어 패키지, 그를 포함한 액정표시패널 어셈블리,그를 채용한 액정표시장치 및 이들의 조립 방법
US7339568B2 (en) * 1999-04-16 2008-03-04 Samsung Electronics Co., Ltd. Signal transmission film and a liquid crystal display panel having the same
KR100301667B1 (ko) * 1999-05-21 2001-09-26 구본준, 론 위라하디락사 액정표시소자와 그 제조 방법
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR100299537B1 (ko) * 1999-08-31 2001-11-01 남상희 엑스-선 검출용 박막트랜지스터 기판 제조방법
KR100348995B1 (ko) * 1999-09-08 2002-08-17 엘지.필립스 엘시디 주식회사 4 마스크를 이용한 액정표시소자의 제조방법 및 그에 따른 액정표시소자
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
JP4190118B2 (ja) * 1999-12-17 2008-12-03 三菱電機株式会社 半導体装置、液晶表示装置および半導体装置の製造方法
JP5408829B2 (ja) 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR100658978B1 (ko) * 2000-02-21 2006-12-18 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) * 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI253538B (en) * 2000-09-30 2006-04-21 Au Optronics Corp Thin film transistor flat display and its manufacturing method
KR100687330B1 (ko) * 2000-12-29 2007-02-27 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터의 제조방법과 이를 실시하기 위한 공정챔버
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KR100704510B1 (ko) * 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 하부 기판 및 그의 제조방법
JP4646420B2 (ja) * 2001-02-28 2011-03-09 三菱電機株式会社 薄膜トランジスタアレイ基板およびそれを用いた表示装置
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KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
KR100792466B1 (ko) * 2001-05-21 2008-01-08 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그의 제조방법
KR100776768B1 (ko) * 2001-07-21 2007-11-16 삼성전자주식회사 액정표시패널용 기판 및 그 제조방법
KR100483358B1 (ko) * 2001-09-07 2005-04-14 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법
US7045373B2 (en) * 2001-09-25 2006-05-16 Hannstar Display Corp. Manufacturing method for in-plane switching mode LCD unit with fewer masking process
JP2003255381A (ja) * 2001-12-28 2003-09-10 Advanced Display Inc 画像表示装置およびその製造方法
TW594193B (en) * 2002-02-06 2004-06-21 Au Optronics Corp Pixel structure and method for repairing the same
JP4604440B2 (ja) * 2002-02-22 2011-01-05 日本電気株式会社 チャネルエッチ型薄膜トランジスタ
JP4216092B2 (ja) * 2002-03-08 2009-01-28 株式会社半導体エネルギー研究所 液晶表示装置
JP3989763B2 (ja) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3872377B2 (ja) 2002-04-30 2007-01-24 インターナショナル・ビジネス・マシーンズ・コーポレーション 画像表示素子および画像表示装置
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JP2005242372A (ja) 2005-09-08
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DE19624916A1 (de) 1997-02-20
KR100338480B1 (ko) 2003-01-24
GB2307087A (en) 1997-05-14
DE19624916C2 (de) 2003-05-22
JP4180575B2 (ja) 2008-11-12
JP2004341550A (ja) 2004-12-02
US5828433A (en) 1998-10-27
JPH09120083A (ja) 1997-05-06
US5825449A (en) 1998-10-20
GB9617241D0 (en) 1996-09-25
JP3734891B2 (ja) 2006-01-11
GB2307087B (en) 2000-03-22

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